JP4253052B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4253052B2
JP4253052B2 JP00598698A JP598698A JP4253052B2 JP 4253052 B2 JP4253052 B2 JP 4253052B2 JP 00598698 A JP00598698 A JP 00598698A JP 598698 A JP598698 A JP 598698A JP 4253052 B2 JP4253052 B2 JP 4253052B2
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Prior art keywords
voltage
misfet
type
source
drain
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Expired - Fee Related
Application number
JP00598698A
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English (en)
Japanese (ja)
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JPH10340998A5 (enExample
JPH10340998A (ja
Inventor
充宏 野口
幸人 大脇
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Toshiba Corp
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Toshiba Corp
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Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP00598698A priority Critical patent/JP4253052B2/ja
Priority to KR1019980013407A priority patent/KR100305254B1/ko
Priority to US09/056,632 priority patent/US6040610A/en
Priority to TW087105307A priority patent/TW421891B/zh
Publication of JPH10340998A publication Critical patent/JPH10340998A/ja
Publication of JPH10340998A5 publication Critical patent/JPH10340998A5/ja
Application granted granted Critical
Publication of JP4253052B2 publication Critical patent/JP4253052B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0021—Modifications of threshold
    • H03K19/0027—Modifications of threshold in field effect transistor circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP00598698A 1997-04-08 1998-01-14 半導体装置 Expired - Fee Related JP4253052B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP00598698A JP4253052B2 (ja) 1997-04-08 1998-01-14 半導体装置
KR1019980013407A KR100305254B1 (ko) 1997-04-08 1998-04-08 반도체장치
US09/056,632 US6040610A (en) 1997-04-08 1998-04-08 Semiconductor device
TW087105307A TW421891B (en) 1997-04-08 1998-04-08 Semiconductor apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8953897 1997-04-08
JP9-89538 1997-04-08
JP00598698A JP4253052B2 (ja) 1997-04-08 1998-01-14 半導体装置

Publications (3)

Publication Number Publication Date
JPH10340998A JPH10340998A (ja) 1998-12-22
JPH10340998A5 JPH10340998A5 (enExample) 2005-06-16
JP4253052B2 true JP4253052B2 (ja) 2009-04-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP00598698A Expired - Fee Related JP4253052B2 (ja) 1997-04-08 1998-01-14 半導体装置

Country Status (4)

Country Link
US (1) US6040610A (enExample)
JP (1) JP4253052B2 (enExample)
KR (1) KR100305254B1 (enExample)
TW (1) TW421891B (enExample)

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JP3175521B2 (ja) * 1995-01-27 2001-06-11 日本電気株式会社 シリコン・オン・インシュレータ半導体装置及びバイアス電圧発生回路

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KR100305254B1 (ko) 2001-11-02
US6040610A (en) 2000-03-21
JPH10340998A (ja) 1998-12-22
KR19980081420A (ko) 1998-11-25

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