KR100305254B1 - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR100305254B1
KR100305254B1 KR1019980013407A KR19980013407A KR100305254B1 KR 100305254 B1 KR100305254 B1 KR 100305254B1 KR 1019980013407 A KR1019980013407 A KR 1019980013407A KR 19980013407 A KR19980013407 A KR 19980013407A KR 100305254 B1 KR100305254 B1 KR 100305254B1
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KR
South Korea
Prior art keywords
misfet
voltage
type
circuit
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019980013407A
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English (en)
Korean (ko)
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KR19980081420A (ko
Inventor
미츠히로 노구치
유키히토 오와키
Original Assignee
니시무로 타이죠
가부시끼가이샤 도시바
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Application filed by 니시무로 타이죠, 가부시끼가이샤 도시바 filed Critical 니시무로 타이죠
Publication of KR19980081420A publication Critical patent/KR19980081420A/ko
Application granted granted Critical
Publication of KR100305254B1 publication Critical patent/KR100305254B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0021—Modifications of threshold
    • H03K19/0027—Modifications of threshold in field effect transistor circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019980013407A 1997-04-08 1998-04-08 반도체장치 Expired - Fee Related KR100305254B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP9-089538 1997-04-08
JP8953897 1997-04-08
JP00598698A JP4253052B2 (ja) 1997-04-08 1998-01-14 半導体装置
JP10-005986 1998-01-14

Publications (2)

Publication Number Publication Date
KR19980081420A KR19980081420A (ko) 1998-11-25
KR100305254B1 true KR100305254B1 (ko) 2001-11-02

Family

ID=26340036

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980013407A Expired - Fee Related KR100305254B1 (ko) 1997-04-08 1998-04-08 반도체장치

Country Status (4)

Country Link
US (1) US6040610A (enExample)
JP (1) JP4253052B2 (enExample)
KR (1) KR100305254B1 (enExample)
TW (1) TW421891B (enExample)

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Also Published As

Publication number Publication date
JPH10340998A (ja) 1998-12-22
KR19980081420A (ko) 1998-11-25
JP4253052B2 (ja) 2009-04-08
TW421891B (en) 2001-02-11
US6040610A (en) 2000-03-21

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