TW421891B - Semiconductor apparatus - Google Patents
Semiconductor apparatus Download PDFInfo
- Publication number
- TW421891B TW421891B TW087105307A TW87105307A TW421891B TW 421891 B TW421891 B TW 421891B TW 087105307 A TW087105307 A TW 087105307A TW 87105307 A TW87105307 A TW 87105307A TW 421891 B TW421891 B TW 421891B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- type
- misfet
- circuit
- sfet
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- 239000000758 substrate Substances 0.000 claims description 244
- 238000011049 filling Methods 0.000 claims description 54
- 230000008859 change Effects 0.000 claims description 43
- 230000002079 cooperative effect Effects 0.000 claims description 29
- 230000002441 reversible effect Effects 0.000 claims description 17
- 235000015170 shellfish Nutrition 0.000 claims description 14
- 239000000969 carrier Substances 0.000 claims description 10
- 238000012546 transfer Methods 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 230000000875 corresponding effect Effects 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- 230000010355 oscillation Effects 0.000 claims description 3
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 230000009471 action Effects 0.000 abstract description 6
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- 238000012986 modification Methods 0.000 description 21
- 229910052796 boron Inorganic materials 0.000 description 18
- 239000012535 impurity Substances 0.000 description 18
- 239000003990 capacitor Substances 0.000 description 16
- 238000005468 ion implantation Methods 0.000 description 16
- 229910021332 silicide Inorganic materials 0.000 description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 16
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 13
- 230000000694 effects Effects 0.000 description 13
- 238000001259 photo etching Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 230000007423 decrease Effects 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052785 arsenic Inorganic materials 0.000 description 11
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- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 230000007704 transition Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 8
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- 229910052751 metal Inorganic materials 0.000 description 8
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- 229910052787 antimony Inorganic materials 0.000 description 7
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- 229910019001 CoSi Inorganic materials 0.000 description 5
- 229910008484 TiSi Inorganic materials 0.000 description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
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- 150000004767 nitrides Chemical class 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 229910015890 BF2 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 2
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
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- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- KUVFGOLWQIXGBP-UHFFFAOYSA-N hafnium(4+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Hf+4] KUVFGOLWQIXGBP-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
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- -1 oxygen ions Chemical class 0.000 description 2
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- 229910021426 porous silicon Inorganic materials 0.000 description 2
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 108091071247 Beta family Proteins 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
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- 229910052735 hafnium Inorganic materials 0.000 description 1
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- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
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- 238000013508 migration Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- 239000002023 wood Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0021—Modifications of threshold
- H03K19/0027—Modifications of threshold in field effect transistor circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8953897 | 1997-04-08 | ||
| JP00598698A JP4253052B2 (ja) | 1997-04-08 | 1998-01-14 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW421891B true TW421891B (en) | 2001-02-11 |
Family
ID=26340036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087105307A TW421891B (en) | 1997-04-08 | 1998-04-08 | Semiconductor apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6040610A (enExample) |
| JP (1) | JP4253052B2 (enExample) |
| KR (1) | KR100305254B1 (enExample) |
| TW (1) | TW421891B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987112A (zh) * | 2019-05-22 | 2020-11-24 | 群创光电股份有限公司 | 放射线感测装置 |
Families Citing this family (123)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100568075B1 (ko) * | 1996-11-26 | 2006-10-24 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체집적회로장치 |
| US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| JP2000133725A (ja) * | 1998-10-26 | 2000-05-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US6587994B1 (en) * | 1999-03-09 | 2003-07-01 | Fujitsu Limited | Hot-carrier degradation simulation of a semiconductor device |
| DE19911463C1 (de) * | 1999-03-15 | 2001-02-08 | Siemens Ag | Leseverstärkeranordnung mit Feldeffekttransistor mit kurzer Kanallänge und einstellbarer Einsatzspannung |
| JP4439031B2 (ja) * | 1999-04-15 | 2010-03-24 | 株式会社ルネサステクノロジ | 半導体装置 |
| US6239649B1 (en) * | 1999-04-20 | 2001-05-29 | International Business Machines Corporation | Switched body SOI (silicon on insulator) circuits and fabrication method therefor |
| US6171910B1 (en) * | 1999-07-21 | 2001-01-09 | Motorola Inc. | Method for forming a semiconductor device |
| US6225852B1 (en) * | 1999-10-01 | 2001-05-01 | Advanced Micro Devices, Inc. | Use of biased high threshold voltage transistor to eliminate standby current in low voltage integrated circuits |
| JP4963144B2 (ja) | 2000-06-22 | 2012-06-27 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
| US6552397B1 (en) * | 2000-06-23 | 2003-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Charge pump device formed on silicon-on-insulator and operation method |
| JP2002359247A (ja) * | 2000-07-10 | 2002-12-13 | Canon Inc | 半導体部材、半導体装置およびそれらの製造方法 |
| US6720596B2 (en) * | 2000-10-17 | 2004-04-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for driving the same |
| JP2002134627A (ja) * | 2000-10-23 | 2002-05-10 | Sharp Corp | 半導体装置及びその製造方法 |
| JP3950294B2 (ja) * | 2000-11-16 | 2007-07-25 | シャープ株式会社 | 半導体装置 |
| EP1217662A1 (en) * | 2000-12-21 | 2002-06-26 | Universite Catholique De Louvain | Ultra-low power basic blocks and their uses |
| JP2002198439A (ja) * | 2000-12-26 | 2002-07-12 | Sharp Corp | 半導体装置および携帯電子機器 |
| US6537901B2 (en) * | 2000-12-29 | 2003-03-25 | Hynix Semiconductor Inc. | Method of manufacturing a transistor in a semiconductor device |
| US6552879B2 (en) | 2001-01-23 | 2003-04-22 | International Business Machines Corporation | Variable voltage threshold ESD protection |
| US6703670B1 (en) | 2001-04-03 | 2004-03-09 | National Semiconductor Corporation | Depletion-mode transistor that eliminates the need to separately set the threshold voltage of the depletion-mode transistor |
| US6584017B2 (en) | 2001-04-05 | 2003-06-24 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
| JP2003051548A (ja) * | 2001-08-06 | 2003-02-21 | Sharp Corp | 半導体集積回路装置およびそれを用いた携帯端末 |
| US6791396B2 (en) * | 2001-10-24 | 2004-09-14 | Saifun Semiconductors Ltd. | Stack element circuit |
| JP4097417B2 (ja) * | 2001-10-26 | 2008-06-11 | 株式会社ルネサステクノロジ | 半導体装置 |
| US20030098489A1 (en) * | 2001-11-29 | 2003-05-29 | International Business Machines Corporation | High temperature processing compatible metal gate electrode for pFETS and methods for fabrication |
| EP1435664A1 (en) * | 2002-01-21 | 2004-07-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
| US6700818B2 (en) | 2002-01-31 | 2004-03-02 | Saifun Semiconductors Ltd. | Method for operating a memory device |
| US6933744B2 (en) * | 2002-06-11 | 2005-08-23 | The Regents Of The University Of Michigan | Low-leakage integrated circuits and dynamic logic circuits |
| US6917544B2 (en) | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
| US8089129B2 (en) * | 2002-08-14 | 2012-01-03 | Advanced Analogic Technologies, Inc. | Isolated CMOS transistors |
| US20040036131A1 (en) * | 2002-08-23 | 2004-02-26 | Micron Technology, Inc. | Electrostatic discharge protection devices having transistors with textured surfaces |
| US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
| US20040151032A1 (en) * | 2003-01-30 | 2004-08-05 | Yan Polansky | High speed and low noise output buffer |
| US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
| US6885244B2 (en) | 2003-03-24 | 2005-04-26 | Saifun Semiconductors Ltd. | Operational amplifier with fast rise time |
| JP4046634B2 (ja) * | 2003-04-08 | 2008-02-13 | Ｎｅｃエレクトロニクス株式会社 | 電圧制御型容量素子及び半導体集積回路 |
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| US4092548A (en) * | 1977-03-15 | 1978-05-30 | International Business Machines Corporation | Substrate bias modulation to improve mosfet circuit performance |
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| JPH06216346A (ja) * | 1992-11-30 | 1994-08-05 | Sony Corp | 半導体装置 |
| JP3175521B2 (ja) * | 1995-01-27 | 2001-06-11 | 日本電気株式会社 | シリコン・オン・インシュレータ半導体装置及びバイアス電圧発生回路 |
-
1998
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- 1998-04-08 US US09/056,632 patent/US6040610A/en not_active Expired - Fee Related
- 1998-04-08 KR KR1019980013407A patent/KR100305254B1/ko not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987112A (zh) * | 2019-05-22 | 2020-11-24 | 群创光电股份有限公司 | 放射线感测装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100305254B1 (ko) | 2001-11-02 |
| US6040610A (en) | 2000-03-21 |
| JP4253052B2 (ja) | 2009-04-08 |
| JPH10340998A (ja) | 1998-12-22 |
| KR19980081420A (ko) | 1998-11-25 |
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