JP4223348B2 - 磁気記録媒体の製造方法及び製造装置 - Google Patents
磁気記録媒体の製造方法及び製造装置 Download PDFInfo
- Publication number
- JP4223348B2 JP4223348B2 JP2003283567A JP2003283567A JP4223348B2 JP 4223348 B2 JP4223348 B2 JP 4223348B2 JP 2003283567 A JP2003283567 A JP 2003283567A JP 2003283567 A JP2003283567 A JP 2003283567A JP 4223348 B2 JP4223348 B2 JP 4223348B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mask layer
- processing step
- continuous recording
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 57
- 238000005530 etching Methods 0.000 claims description 73
- 239000000463 material Substances 0.000 claims description 60
- 238000010884 ion-beam technique Methods 0.000 claims description 47
- 239000007789 gas Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 39
- 238000001020 plasma etching Methods 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 316
- 230000000052 comparative effect Effects 0.000 description 18
- 238000001312 dry etching Methods 0.000 description 14
- 239000011241 protective layer Substances 0.000 description 14
- 238000004380 ashing Methods 0.000 description 13
- 230000006866 deterioration Effects 0.000 description 11
- 238000001816 cooling Methods 0.000 description 10
- 230000001050 lubricating effect Effects 0.000 description 10
- 239000012495 reaction gas Substances 0.000 description 10
- 239000000696 magnetic material Substances 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005108 dry cleaning Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000005389 magnetism Effects 0.000 description 4
- 239000010702 perfluoropolyether Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910021385 hard carbon Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/855—Coating only part of a support with a magnetic layer
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Heads (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003283567A JP4223348B2 (ja) | 2003-07-31 | 2003-07-31 | 磁気記録媒体の製造方法及び製造装置 |
| US10/535,265 US7470374B2 (en) | 2003-07-31 | 2004-07-28 | Manufacturing method and manufacturing apparatus of magnetic recording medium |
| PCT/JP2004/010710 WO2005013264A1 (ja) | 2003-07-31 | 2004-07-28 | 磁気記録媒体の製造方法及び製造装置 |
| CNB2004800015656A CN100383859C (zh) | 2003-07-31 | 2004-07-28 | 磁记录介质的制造方法及其制造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003283567A JP4223348B2 (ja) | 2003-07-31 | 2003-07-31 | 磁気記録媒体の製造方法及び製造装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005050468A JP2005050468A (ja) | 2005-02-24 |
| JP2005050468A5 JP2005050468A5 (enExample) | 2005-08-25 |
| JP4223348B2 true JP4223348B2 (ja) | 2009-02-12 |
Family
ID=34113810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003283567A Expired - Fee Related JP4223348B2 (ja) | 2003-07-31 | 2003-07-31 | 磁気記録媒体の製造方法及び製造装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7470374B2 (enExample) |
| JP (1) | JP4223348B2 (enExample) |
| CN (1) | CN100383859C (enExample) |
| WO (1) | WO2005013264A1 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3816911B2 (ja) | 2003-09-30 | 2006-08-30 | 株式会社東芝 | 磁気記録媒体 |
| JP4071787B2 (ja) * | 2004-12-13 | 2008-04-02 | Tdk株式会社 | 磁気記録媒体の製造方法 |
| JP4008933B2 (ja) | 2005-05-16 | 2007-11-14 | 株式会社東芝 | 磁気記録媒体およびその製造方法ならびに磁気記録装置 |
| JP4528677B2 (ja) * | 2005-06-24 | 2010-08-18 | 株式会社東芝 | パターンド媒体の製造方法及び製造装置 |
| JPWO2007032379A1 (ja) | 2005-09-13 | 2009-03-19 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法及び製造装置 |
| JP4626600B2 (ja) * | 2006-09-29 | 2011-02-09 | Tdk株式会社 | 磁気記録媒体の製造方法 |
| EP2109678B1 (en) | 2007-02-06 | 2013-01-02 | BASF Plant Science GmbH | Nematode inducible plant mtn3-like gene promotors and regulatory elements |
| JP2008282512A (ja) * | 2007-05-14 | 2008-11-20 | Toshiba Corp | 磁気記録媒体及び磁気記録再生装置 |
| JP4382843B2 (ja) | 2007-09-26 | 2009-12-16 | 株式会社東芝 | 磁気記録媒体およびその製造方法 |
| US20100290155A1 (en) * | 2007-11-07 | 2010-11-18 | Showa Denko K.K. | Method of manufacturing perpendicular magnetic recording medium and magnetic recording and reproducing apparatus |
| JP2009169993A (ja) | 2008-01-10 | 2009-07-30 | Fuji Electric Device Technology Co Ltd | パターンドメディア型磁気記録媒体の製造方法 |
| JP4468469B2 (ja) | 2008-07-25 | 2010-05-26 | 株式会社東芝 | 磁気記録媒体の製造方法 |
| JP4489132B2 (ja) | 2008-08-22 | 2010-06-23 | 株式会社東芝 | 磁気記録媒体の製造方法 |
| JP2010086586A (ja) * | 2008-09-30 | 2010-04-15 | Hoya Corp | 垂直磁気記録媒体の製造方法 |
| JP4551957B2 (ja) | 2008-12-12 | 2010-09-29 | 株式会社東芝 | 磁気記録媒体の製造方法 |
| JP4575498B2 (ja) | 2009-02-20 | 2010-11-04 | 株式会社東芝 | 磁気記録媒体の製造方法 |
| JP4575499B2 (ja) | 2009-02-20 | 2010-11-04 | 株式会社東芝 | 磁気記録媒体の製造方法 |
| JP4568367B2 (ja) | 2009-02-20 | 2010-10-27 | 株式会社東芝 | 磁気記録媒体の製造方法 |
| JP4686623B2 (ja) * | 2009-07-17 | 2011-05-25 | 株式会社東芝 | 磁気記録媒体の製造方法 |
| JP2011070753A (ja) * | 2009-08-27 | 2011-04-07 | Fuji Electric Device Technology Co Ltd | ディスクリートトラックメディア型垂直磁気記録媒体の製造方法 |
| JP2011138572A (ja) * | 2009-12-28 | 2011-07-14 | Canon Anelva Corp | 磁気記録媒体の製造方法 |
| JP5238780B2 (ja) | 2010-09-17 | 2013-07-17 | 株式会社東芝 | 磁気記録媒体とその製造方法及び磁気記録装置 |
| JP5666248B2 (ja) | 2010-11-02 | 2015-02-12 | キヤノンアネルバ株式会社 | 磁気記録媒体の製造装置 |
| JP5651628B2 (ja) * | 2012-03-22 | 2015-01-14 | 株式会社東芝 | 磁気記録媒体の製造方法 |
| JP5392375B2 (ja) * | 2012-05-07 | 2014-01-22 | 富士電機株式会社 | 記録媒体 |
| US9705077B2 (en) | 2015-08-31 | 2017-07-11 | International Business Machines Corporation | Spin torque MRAM fabrication using negative tone lithography and ion beam etching |
| US10164175B2 (en) | 2016-03-07 | 2018-12-25 | Samsung Electronics Co., Ltd. | Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositions |
Family Cites Families (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730130A (en) | 1980-07-28 | 1982-02-18 | Hitachi Ltd | Production of abrasive-dish original disk with groove for video disk stylus |
| US4632898A (en) | 1985-04-15 | 1986-12-30 | Eastman Kodak Company | Process for fabricating glass tooling |
| JP3034879B2 (ja) | 1989-07-06 | 2000-04-17 | 株式会社日立製作所 | 磁気ディスクの製造方法 |
| KR960000375B1 (ko) * | 1991-01-22 | 1996-01-05 | 가부시끼가이샤 도시바 | 반도체장치의 제조방법 |
| JPH05508266A (ja) * | 1991-04-03 | 1993-11-18 | イーストマン・コダック・カンパニー | GaAsをドライエッチングするための高耐久性マスク |
| JPH0620230A (ja) * | 1992-07-03 | 1994-01-28 | Mitsubishi Electric Corp | 薄膜磁気ヘッドおよびその製法 |
| JP3312146B2 (ja) * | 1993-06-25 | 2002-08-05 | 株式会社日立製作所 | 磁気ヘッドおよびその製造方法 |
| JPH0997419A (ja) | 1995-07-24 | 1997-04-08 | Toshiba Corp | 磁気ディスク、磁気ディスクの製造方法、及び磁気記録装置 |
| US6014296A (en) * | 1995-07-24 | 2000-01-11 | Kabushiki Kaisha Toshiba | Magnetic disk, method of manufacturing magnetic disk and magnetic recording apparatus |
| JP3058062B2 (ja) | 1995-10-13 | 2000-07-04 | 日本電気株式会社 | 光ディスク用記録原盤の製造方 |
| US6055139A (en) * | 1995-12-14 | 2000-04-25 | Fujitsu Limited | Magnetic recording medium and method of forming the same and magnetic disk drive |
| JP3647961B2 (ja) * | 1996-03-05 | 2005-05-18 | 富士通株式会社 | 磁気ヘッド用スライダ及び磁気記録装置 |
| US5789320A (en) * | 1996-04-23 | 1998-08-04 | International Business Machines Corporation | Plating of noble metal electrodes for DRAM and FRAM |
| JP3257533B2 (ja) * | 1999-01-25 | 2002-02-18 | 日本電気株式会社 | 無機反射防止膜を使った配線形成方法 |
| JP4257808B2 (ja) | 1999-05-11 | 2009-04-22 | 独立行政法人科学技術振興機構 | 磁性材料のエッチング方法及びプラズマエッチング装置 |
| JP2001077196A (ja) * | 1999-09-08 | 2001-03-23 | Sony Corp | 半導体装置の製造方法 |
| JP2001167420A (ja) * | 1999-09-27 | 2001-06-22 | Tdk Corp | 磁気記録媒体およびその製造方法 |
| JP2001243665A (ja) * | 1999-11-26 | 2001-09-07 | Canon Inc | 光ディスク基板成型用スタンパおよびその製造方法 |
| JP2001185531A (ja) * | 1999-12-15 | 2001-07-06 | Read Rite Corp | 多層レジストのエッチング方法と薄膜磁気ヘッドの製造方法 |
| US6949203B2 (en) * | 1999-12-28 | 2005-09-27 | Applied Materials, Inc. | System level in-situ integrated dielectric etch process particularly useful for copper dual damascene |
| JP3861197B2 (ja) * | 2001-03-22 | 2006-12-20 | 株式会社東芝 | 記録媒体の製造方法 |
| DE10153310A1 (de) * | 2001-10-29 | 2003-05-22 | Infineon Technologies Ag | Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte |
| JP3850718B2 (ja) * | 2001-11-22 | 2006-11-29 | 株式会社東芝 | 加工方法 |
| US20040016918A1 (en) * | 2001-12-18 | 2004-01-29 | Amin Mohammad H. S. | System and method for controlling superconducting qubits |
| US6689622B1 (en) * | 2002-04-26 | 2004-02-10 | Micron Technology, Inc. | Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication |
| US20050181604A1 (en) * | 2002-07-11 | 2005-08-18 | Hans-Peter Sperlich | Method for structuring metal by means of a carbon mask |
| US6884733B1 (en) * | 2002-08-08 | 2005-04-26 | Advanced Micro Devices, Inc. | Use of amorphous carbon hard mask for gate patterning to eliminate requirement of poly re-oxidation |
| US6989332B1 (en) * | 2002-08-13 | 2006-01-24 | Advanced Micro Devices, Inc. | Ion implantation to modulate amorphous carbon stress |
| US6875664B1 (en) * | 2002-08-29 | 2005-04-05 | Advanced Micro Devices, Inc. | Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material |
| JP4304947B2 (ja) * | 2002-09-26 | 2009-07-29 | 株式会社日立製作所 | 磁気記録媒体とそれを用いた磁気メモリ装置、磁気記録方法、信号再生方法 |
| US6884630B2 (en) * | 2002-10-30 | 2005-04-26 | Infineon Technologies Ag | Two-step magnetic tunnel junction stack deposition |
| US7405860B2 (en) * | 2002-11-26 | 2008-07-29 | Texas Instruments Incorporated | Spatial light modulators with light blocking/absorbing areas |
| JP2004266008A (ja) * | 2003-02-28 | 2004-09-24 | Toshiba Corp | 半導体装置の製造方法 |
| JP4076889B2 (ja) * | 2003-03-26 | 2008-04-16 | Tdk株式会社 | 磁気記録媒体の製造方法 |
| US20040229470A1 (en) * | 2003-05-14 | 2004-11-18 | Applied Materials, Inc. | Method for etching an aluminum layer using an amorphous carbon mask |
| US6939794B2 (en) * | 2003-06-17 | 2005-09-06 | Micron Technology, Inc. | Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device |
| US6806096B1 (en) * | 2003-06-18 | 2004-10-19 | Infineon Technologies Ag | Integration scheme for avoiding plasma damage in MRAM technology |
| US6984529B2 (en) * | 2003-09-10 | 2006-01-10 | Infineon Technologies Ag | Fabrication process for a magnetic tunnel junction device |
| US7050326B2 (en) * | 2003-10-07 | 2006-05-23 | Hewlett-Packard Development Company, L.P. | Magnetic memory device with current carrying reference layer |
| JP4322096B2 (ja) * | 2003-11-14 | 2009-08-26 | Tdk株式会社 | レジストパターン形成方法並びに磁気記録媒体及び磁気ヘッドの製造方法 |
| JP4775806B2 (ja) * | 2004-02-10 | 2011-09-21 | Tdk株式会社 | 磁気記録媒体の製造方法 |
| JP4111276B2 (ja) * | 2004-02-26 | 2008-07-02 | Tdk株式会社 | 磁気記録媒体及び磁気記録再生装置 |
| JP2005276275A (ja) * | 2004-03-23 | 2005-10-06 | Tdk Corp | 磁気記録媒体 |
| JP3802539B2 (ja) * | 2004-04-30 | 2006-07-26 | Tdk株式会社 | 磁気記録媒体の製造方法 |
| JP2006012285A (ja) * | 2004-06-25 | 2006-01-12 | Tdk Corp | 磁気記録媒体及び磁気記録媒体の製造方法 |
| JP2006012332A (ja) * | 2004-06-28 | 2006-01-12 | Tdk Corp | ドライエッチング方法、磁気記録媒体の製造方法及び磁気記録媒体 |
| US7910288B2 (en) * | 2004-09-01 | 2011-03-22 | Micron Technology, Inc. | Mask material conversion |
| US7806988B2 (en) * | 2004-09-28 | 2010-10-05 | Micron Technology, Inc. | Method to address carbon incorporation in an interpoly oxide |
| US7253118B2 (en) * | 2005-03-15 | 2007-08-07 | Micron Technology, Inc. | Pitch reduced patterns relative to photolithography features |
-
2003
- 2003-07-31 JP JP2003283567A patent/JP4223348B2/ja not_active Expired - Fee Related
-
2004
- 2004-07-28 US US10/535,265 patent/US7470374B2/en not_active Expired - Fee Related
- 2004-07-28 CN CNB2004800015656A patent/CN100383859C/zh not_active Expired - Fee Related
- 2004-07-28 WO PCT/JP2004/010710 patent/WO2005013264A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN1717723A (zh) | 2006-01-04 |
| CN100383859C (zh) | 2008-04-23 |
| WO2005013264A1 (ja) | 2005-02-10 |
| US20060021966A1 (en) | 2006-02-02 |
| JP2005050468A (ja) | 2005-02-24 |
| US7470374B2 (en) | 2008-12-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4223348B2 (ja) | 磁気記録媒体の製造方法及び製造装置 | |
| JP2005056535A (ja) | 磁気記録媒体の製造方法及び製造装置 | |
| JP3686067B2 (ja) | 磁気記録媒体の製造方法 | |
| US20080078739A1 (en) | Method for manufacturing magnetic recording medium | |
| JP2011507131A (ja) | パターン化媒体を商業的に製造するシステム及び方法 | |
| US20080149590A1 (en) | Substrate-Holder, Etching Method of the Substrate, and the Fabrication Method of a Magnetic Recording Media | |
| CN102438841A (zh) | 用于图案化介质中的岛与沟槽的比值优化的工艺 | |
| JP4510796B2 (ja) | 磁気記憶媒体の製造方法 | |
| JP2005100496A (ja) | 磁気記録媒体の製造方法及び磁気記録媒体 | |
| JP3844755B2 (ja) | 磁気記録媒体の製造方法 | |
| JP2005235357A (ja) | 磁気記録媒体の製造方法 | |
| US8349163B2 (en) | Perpendicular magnetic recording medium, method of manufacturing the same, and magnetic read/write apparatus | |
| JP2010140544A (ja) | 磁気記録媒体の製造方法及び磁気記録媒体、並びに磁気記録再生装置 | |
| US8298691B2 (en) | Magnetic recording medium and magnetic recording and reproducing apparatus | |
| JP2005235356A (ja) | 磁気記録媒体の製造方法 | |
| WO2004079045A1 (ja) | 磁性材のドライエッチング方法、磁性材及び磁気記録媒体 | |
| JP4419622B2 (ja) | 磁気記録媒体の製造方法 | |
| JP2005071543A (ja) | 磁気記録媒体の製造方法 | |
| US7727412B2 (en) | Dry etching method | |
| JP4319104B2 (ja) | 磁気記録媒体の製造方法 | |
| JP2009230823A (ja) | 磁気記録媒体の製造方法 | |
| JP2005093672A (ja) | プラズマ処理装置及び情報記録媒体の製造方法 | |
| JP2010020841A (ja) | インライン式成膜装置及び磁気記録媒体の製造方法 | |
| JP2006252637A (ja) | 磁気記録媒体の製造方法 | |
| JP2004163698A (ja) | 電子線描画方法、電子線描画方法を用いて作成した原盤をもとに製作したスタンパ用金型、およびスタンパ用金型で製作した情報記録媒体 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20050401 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050414 |
|
| A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20050518 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050524 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050725 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20050823 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050922 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050927 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051216 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20051222 |
|
| A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20060120 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081024 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20081119 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111128 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121128 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121128 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131128 Year of fee payment: 5 |
|
| LAPS | Cancellation because of no payment of annual fees |