JP4133166B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP4133166B2
JP4133166B2 JP2002278905A JP2002278905A JP4133166B2 JP 4133166 B2 JP4133166 B2 JP 4133166B2 JP 2002278905 A JP2002278905 A JP 2002278905A JP 2002278905 A JP2002278905 A JP 2002278905A JP 4133166 B2 JP4133166 B2 JP 4133166B2
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Japan
Prior art keywords
memory device
semiconductor memory
write
flag
power supply
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2002278905A
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English (en)
Japanese (ja)
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JP2004118908A (ja
Inventor
良多郎 櫻井
田中　　均
敏史 野田
孝次 重松
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2002278905A priority Critical patent/JP4133166B2/ja
Priority to TW092126015A priority patent/TW200405355A/zh
Priority to US10/667,512 priority patent/US6912155B2/en
Priority to KR1020030066161A priority patent/KR100939895B1/ko
Priority to CNA031594697A priority patent/CN1501405A/zh
Publication of JP2004118908A publication Critical patent/JP2004118908A/ja
Priority to US11/130,274 priority patent/US7426136B2/en
Priority to US11/868,342 priority patent/US7558107B2/en
Application granted granted Critical
Publication of JP4133166B2 publication Critical patent/JP4133166B2/ja
Priority to US12/493,143 priority patent/US7808828B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
JP2002278905A 2002-09-25 2002-09-25 不揮発性半導体記憶装置 Expired - Lifetime JP4133166B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2002278905A JP4133166B2 (ja) 2002-09-25 2002-09-25 不揮発性半導体記憶装置
TW092126015A TW200405355A (en) 2002-09-25 2003-09-19 Non-volatile semiconductor memory device
US10/667,512 US6912155B2 (en) 2002-09-25 2003-09-23 Non volatile memory
KR1020030066161A KR100939895B1 (ko) 2002-09-25 2003-09-24 불휘발성 기억 장치
CNA031594697A CN1501405A (zh) 2002-09-25 2003-09-25 非易失性存储器
US11/130,274 US7426136B2 (en) 2002-09-25 2005-05-17 Non volatile memory
US11/868,342 US7558107B2 (en) 2002-09-25 2007-10-05 Non volatile memory
US12/493,143 US7808828B2 (en) 2002-09-25 2009-06-26 Non volatile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002278905A JP4133166B2 (ja) 2002-09-25 2002-09-25 不揮発性半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008107456A Division JP2008181661A (ja) 2008-04-17 2008-04-17 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2004118908A JP2004118908A (ja) 2004-04-15
JP4133166B2 true JP4133166B2 (ja) 2008-08-13

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Family Applications (1)

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JP2002278905A Expired - Lifetime JP4133166B2 (ja) 2002-09-25 2002-09-25 不揮発性半導体記憶装置

Country Status (5)

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US (4) US6912155B2 (enExample)
JP (1) JP4133166B2 (enExample)
KR (1) KR100939895B1 (enExample)
CN (1) CN1501405A (enExample)
TW (1) TW200405355A (enExample)

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Publication number Publication date
US20050219904A1 (en) 2005-10-06
KR20040027373A (ko) 2004-04-01
CN1501405A (zh) 2004-06-02
TW200405355A (en) 2004-04-01
US7426136B2 (en) 2008-09-16
JP2004118908A (ja) 2004-04-15
US7808828B2 (en) 2010-10-05
KR100939895B1 (ko) 2010-01-29
TWI314737B (enExample) 2009-09-11
US6912155B2 (en) 2005-06-28
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