KR100939895B1 - 불휘발성 기억 장치 - Google Patents

불휘발성 기억 장치 Download PDF

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Publication number
KR100939895B1
KR100939895B1 KR1020030066161A KR20030066161A KR100939895B1 KR 100939895 B1 KR100939895 B1 KR 100939895B1 KR 1020030066161 A KR1020030066161 A KR 1020030066161A KR 20030066161 A KR20030066161 A KR 20030066161A KR 100939895 B1 KR100939895 B1 KR 100939895B1
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South Korea
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memory
memory cell
state
storing
write
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Korean (ko)
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KR20040027373A (ko
Inventor
사꾸라이료따로
다나까히또시
노다사또시
시게마쯔고지
Original Assignee
가부시끼가이샤 르네사스 테크놀로지
가부시기가이샤 히다치초엘에스아이시스템즈
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
KR1020030066161A 2002-09-25 2003-09-24 불휘발성 기억 장치 Expired - Lifetime KR100939895B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00278905 2002-09-25
JP2002278905A JP4133166B2 (ja) 2002-09-25 2002-09-25 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
KR20040027373A KR20040027373A (ko) 2004-04-01
KR100939895B1 true KR100939895B1 (ko) 2010-01-29

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KR1020030066161A Expired - Lifetime KR100939895B1 (ko) 2002-09-25 2003-09-24 불휘발성 기억 장치

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US (4) US6912155B2 (enExample)
JP (1) JP4133166B2 (enExample)
KR (1) KR100939895B1 (enExample)
CN (1) CN1501405A (enExample)
TW (1) TW200405355A (enExample)

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Publication number Publication date
US20050219904A1 (en) 2005-10-06
KR20040027373A (ko) 2004-04-01
CN1501405A (zh) 2004-06-02
TW200405355A (en) 2004-04-01
US7426136B2 (en) 2008-09-16
JP2004118908A (ja) 2004-04-15
US7808828B2 (en) 2010-10-05
TWI314737B (enExample) 2009-09-11
JP4133166B2 (ja) 2008-08-13
US6912155B2 (en) 2005-06-28
US20040105324A1 (en) 2004-06-03
US20090262581A1 (en) 2009-10-22
US7558107B2 (en) 2009-07-07
US20080253184A1 (en) 2008-10-16

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