CN1501405A - 非易失性存储器 - Google Patents

非易失性存储器 Download PDF

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Publication number
CN1501405A
CN1501405A CNA031594697A CN03159469A CN1501405A CN 1501405 A CN1501405 A CN 1501405A CN A031594697 A CNA031594697 A CN A031594697A CN 03159469 A CN03159469 A CN 03159469A CN 1501405 A CN1501405 A CN 1501405A
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CN
China
Prior art keywords
memory
write
threshold voltage
storage unit
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA031594697A
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English (en)
Chinese (zh)
Inventor
樱井良多郎
ʷ
田中均
野田敏史
重松孝次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Hitachi Solutions Technology Ltd
Original Assignee
Renesas Technology Corp
Hitachi ULSI Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp, Hitachi ULSI Systems Co Ltd filed Critical Renesas Technology Corp
Publication of CN1501405A publication Critical patent/CN1501405A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
CNA031594697A 2002-09-25 2003-09-25 非易失性存储器 Pending CN1501405A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP278905/2002 2002-09-25
JP2002278905A JP4133166B2 (ja) 2002-09-25 2002-09-25 不揮発性半導体記憶装置

Publications (1)

Publication Number Publication Date
CN1501405A true CN1501405A (zh) 2004-06-02

Family

ID=32274066

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA031594697A Pending CN1501405A (zh) 2002-09-25 2003-09-25 非易失性存储器

Country Status (5)

Country Link
US (4) US6912155B2 (enExample)
JP (1) JP4133166B2 (enExample)
KR (1) KR100939895B1 (enExample)
CN (1) CN1501405A (enExample)
TW (1) TW200405355A (enExample)

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CN100527276C (zh) * 2005-06-02 2009-08-12 索尼株式会社 存储设备和其擦除方法、以及半导体设备
CN100530433C (zh) * 2004-10-26 2009-08-19 斯班逊有限公司 非易失性存储装置的信息设定方法及非易失性存储装置
CN101031978B (zh) * 2004-07-20 2011-06-08 桑迪士克股份有限公司 具有编程时间控制的非易失性存储器系统
CN102327738A (zh) * 2005-11-22 2012-01-25 迈克罗拉布诊断有限公司 流体处理结构、流控装置、插入件、组合和方法
CN102543211A (zh) * 2010-12-22 2012-07-04 日立环球储存科技荷兰有限公司 与非闪存中的退化的早期检测
CN103763110A (zh) * 2014-01-03 2014-04-30 熊猫电子集团有限公司 一种用于通信设备参数清除的装置
CN104599705A (zh) * 2013-10-30 2015-05-06 台湾积体电路制造股份有限公司 存储器件
CN104637534A (zh) * 2013-11-14 2015-05-20 爱思开海力士有限公司 半导体存储器件及操作其的方法
CN106571163A (zh) * 2016-11-04 2017-04-19 上海华虹集成电路有限责任公司 非易失性存储器编程方法
CN109903799A (zh) * 2019-01-29 2019-06-18 华中科技大学 一种可变编程级数的三维闪存阵列单元操作方法
CN110853686A (zh) * 2019-10-22 2020-02-28 长江存储科技有限责任公司 适用于闪存设备的掉电处理方法、装置、介质、及终端
CN111312318A (zh) * 2018-12-12 2020-06-19 北京兆易创新科技股份有限公司 一种非易失存储器控制方法以及装置
CN112582011A (zh) * 2019-09-30 2021-03-30 爱思开海力士有限公司 存储器设备及其操作方法

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CN100530433C (zh) * 2004-10-26 2009-08-19 斯班逊有限公司 非易失性存储装置的信息设定方法及非易失性存储装置
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CN102327738A (zh) * 2005-11-22 2012-01-25 迈克罗拉布诊断有限公司 流体处理结构、流控装置、插入件、组合和方法
CN102543211B (zh) * 2010-12-22 2016-05-11 Hgst荷兰公司 与非闪存中的退化的早期检测方法和装置
CN102543211A (zh) * 2010-12-22 2012-07-04 日立环球储存科技荷兰有限公司 与非闪存中的退化的早期检测
CN104599705A (zh) * 2013-10-30 2015-05-06 台湾积体电路制造股份有限公司 存储器件
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CN103763110A (zh) * 2014-01-03 2014-04-30 熊猫电子集团有限公司 一种用于通信设备参数清除的装置
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CN109903799B (zh) * 2019-01-29 2021-08-03 华中科技大学 一种可变编程级数的三维闪存阵列单元操作方法
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US6912155B2 (en) 2005-06-28
US20040105324A1 (en) 2004-06-03
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