JP4076648B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4076648B2
JP4076648B2 JP36168998A JP36168998A JP4076648B2 JP 4076648 B2 JP4076648 B2 JP 4076648B2 JP 36168998 A JP36168998 A JP 36168998A JP 36168998 A JP36168998 A JP 36168998A JP 4076648 B2 JP4076648 B2 JP 4076648B2
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JP
Japan
Prior art keywords
wiring
conductive layer
film
semiconductor device
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP36168998A
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English (en)
Japanese (ja)
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JP2000183356A (ja
JP2000183356A5 (enExample
Inventor
久 大谷
舜平 山崎
潤 小山
康行 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP36168998A priority Critical patent/JP4076648B2/ja
Publication of JP2000183356A publication Critical patent/JP2000183356A/ja
Priority to US09/837,552 priority patent/US6914302B2/en
Publication of JP2000183356A5 publication Critical patent/JP2000183356A5/ja
Application granted granted Critical
Publication of JP4076648B2 publication Critical patent/JP4076648B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP36168998A 1998-12-18 1998-12-18 半導体装置 Expired - Fee Related JP4076648B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP36168998A JP4076648B2 (ja) 1998-12-18 1998-12-18 半導体装置
US09/837,552 US6914302B2 (en) 1998-12-18 2001-04-19 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP36168998A JP4076648B2 (ja) 1998-12-18 1998-12-18 半導体装置
US09/837,552 US6914302B2 (en) 1998-12-18 2001-04-19 Semiconductor device and manufacturing method thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007208107A Division JP4298768B2 (ja) 2007-08-09 2007-08-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2000183356A JP2000183356A (ja) 2000-06-30
JP2000183356A5 JP2000183356A5 (enExample) 2006-03-09
JP4076648B2 true JP4076648B2 (ja) 2008-04-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP36168998A Expired - Fee Related JP4076648B2 (ja) 1998-12-18 1998-12-18 半導体装置

Country Status (2)

Country Link
US (1) US6914302B2 (enExample)
JP (1) JP4076648B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150048508A (ko) * 2013-10-28 2015-05-07 삼성디스플레이 주식회사 표시 장치, 표시 장치의 제조 방법, 및 유기 발광 표시 장치

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JP4076648B2 (ja) 1998-12-18 2008-04-16 株式会社半導体エネルギー研究所 半導体装置
JP4008133B2 (ja) 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置
JP4202502B2 (ja) 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
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KR100929666B1 (ko) * 2002-01-03 2009-12-03 삼성전자주식회사 액정 표시 장치 및 그 제조 방법
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KR100796298B1 (ko) * 2002-08-30 2008-01-21 삼성전자주식회사 액정표시장치
CN100449779C (zh) * 2002-10-07 2009-01-07 株式会社半导体能源研究所 半导体器件及其制造方法
KR101061853B1 (ko) * 2003-08-29 2011-09-02 삼성전자주식회사 표시 장치 및 그 표시판
JP4377640B2 (ja) * 2003-09-19 2009-12-02 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
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EP1837900A3 (en) * 2006-03-21 2008-10-15 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
KR101488516B1 (ko) * 2006-03-21 2015-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 반도체 기억장치
EP1837917A1 (en) * 2006-03-21 2007-09-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
EP1840947A3 (en) * 2006-03-31 2008-08-13 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US8022460B2 (en) * 2006-03-31 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US7554854B2 (en) * 2006-03-31 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for deleting data from NAND type nonvolatile memory
US7786526B2 (en) * 2006-03-31 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
KR101623958B1 (ko) * 2008-10-01 2016-05-25 삼성전자주식회사 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로
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EP2486596A4 (en) * 2009-10-09 2013-08-28 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
KR101772639B1 (ko) * 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104882414B (zh) * 2015-05-06 2018-07-10 深圳市华星光电技术有限公司 Tft基板的制作方法及其结构
CN117457675A (zh) * 2023-09-15 2024-01-26 武汉华星光电技术有限公司 阵列基板及显示面板

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
KR20150048508A (ko) * 2013-10-28 2015-05-07 삼성디스플레이 주식회사 표시 장치, 표시 장치의 제조 방법, 및 유기 발광 표시 장치
KR102211967B1 (ko) 2013-10-28 2021-02-05 삼성디스플레이 주식회사 표시 장치, 표시 장치의 제조 방법, 및 유기 발광 표시 장치

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US20020175376A1 (en) 2002-11-28
US6914302B2 (en) 2005-07-05

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