JP3983996B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP3983996B2
JP3983996B2 JP2001124475A JP2001124475A JP3983996B2 JP 3983996 B2 JP3983996 B2 JP 3983996B2 JP 2001124475 A JP2001124475 A JP 2001124475A JP 2001124475 A JP2001124475 A JP 2001124475A JP 3983996 B2 JP3983996 B2 JP 3983996B2
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Japan
Prior art keywords
film
wirings
integrated circuit
circuit device
semiconductor integrated
Prior art date
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Expired - Fee Related
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JP2001124475A
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English (en)
Japanese (ja)
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JP2002319635A (ja
JP2002319635A5 (zh
Inventor
俊夫 宮本
一郎 安生
朝雄 西村
欣秀 山口
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2001124475A priority Critical patent/JP3983996B2/ja
Priority to TW091105484A priority patent/TW538490B/zh
Priority to KR1020020021957A priority patent/KR100907351B1/ko
Priority to US10/127,583 priority patent/US6720591B2/en
Publication of JP2002319635A publication Critical patent/JP2002319635A/ja
Priority to US10/765,916 priority patent/US6949416B2/en
Publication of JP2002319635A5 publication Critical patent/JP2002319635A5/ja
Application granted granted Critical
Publication of JP3983996B2 publication Critical patent/JP3983996B2/ja
Priority to KR1020080137860A priority patent/KR20090017466A/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
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JP2001124475A 2001-04-23 2001-04-23 半導体集積回路装置 Expired - Fee Related JP3983996B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001124475A JP3983996B2 (ja) 2001-04-23 2001-04-23 半導体集積回路装置
TW091105484A TW538490B (en) 2001-04-23 2002-03-21 Semiconductor integrated circuit device and method of manufacturing the same
KR1020020021957A KR100907351B1 (ko) 2001-04-23 2002-04-22 반도체 집적 회로 장치 및 그 제조 방법
US10/127,583 US6720591B2 (en) 2001-04-23 2002-04-23 Semiconductor integrated circuit device
US10/765,916 US6949416B2 (en) 2001-04-23 2004-01-29 Method of manufacturing a semiconductor integrated circuit device
KR1020080137860A KR20090017466A (ko) 2001-04-23 2008-12-31 반도체 집적 회로 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001124475A JP3983996B2 (ja) 2001-04-23 2001-04-23 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2002319635A JP2002319635A (ja) 2002-10-31
JP2002319635A5 JP2002319635A5 (zh) 2006-03-09
JP3983996B2 true JP3983996B2 (ja) 2007-09-26

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JP2001124475A Expired - Fee Related JP3983996B2 (ja) 2001-04-23 2001-04-23 半導体集積回路装置

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US (2) US6720591B2 (zh)
JP (1) JP3983996B2 (zh)
KR (2) KR100907351B1 (zh)
TW (1) TW538490B (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040178498A1 (en) * 2003-03-10 2004-09-16 Low Qwai H. Wire bonding to full array bonding pads on active circuitry
KR100629357B1 (ko) * 2004-11-29 2006-09-29 삼성전자주식회사 퓨즈 및 부하저항을 갖는 낸드 플래시메모리소자 형성방법
US7999379B2 (en) * 2005-02-25 2011-08-16 Tessera, Inc. Microelectronic assemblies having compliancy
JP4284544B2 (ja) 2005-06-29 2009-06-24 セイコーエプソン株式会社 半導体装置及びその製造方法
KR100678634B1 (ko) * 2005-10-27 2007-02-05 삼성전자주식회사 반도체 소자 및 그 제조 방법
US7585722B2 (en) * 2006-01-10 2009-09-08 International Business Machines Corporation Integrated circuit comb capacitor
KR100713932B1 (ko) * 2006-03-29 2007-05-07 주식회사 하이닉스반도체 플립 칩 본디드 패키지
JP5103861B2 (ja) * 2006-10-13 2012-12-19 セイコーエプソン株式会社 半導体装置、半導体装置の製造方法、回路基板および電子機器
US7749886B2 (en) 2006-12-20 2010-07-06 Tessera, Inc. Microelectronic assemblies having compliancy and methods therefor
JP4489106B2 (ja) * 2007-08-27 2010-06-23 日本テキサス・インスツルメンツ株式会社 不良解析装置
JP2010278040A (ja) * 2009-05-26 2010-12-09 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
FR2955419B1 (fr) * 2010-01-21 2012-07-13 St Microelectronics Crolles 2 Dispositif integre de memoire du type dram
JP5574780B2 (ja) * 2010-03-30 2014-08-20 株式会社テラプローブ 半導体装置及びその製造方法
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