JP3946470B2 - 半導体層の膜厚測定方法及び半導体基板の製造方法 - Google Patents

半導体層の膜厚測定方法及び半導体基板の製造方法 Download PDF

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JP3946470B2
JP3946470B2 JP2001215657A JP2001215657A JP3946470B2 JP 3946470 B2 JP3946470 B2 JP 3946470B2 JP 2001215657 A JP2001215657 A JP 2001215657A JP 2001215657 A JP2001215657 A JP 2001215657A JP 3946470 B2 JP3946470 B2 JP 3946470B2
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film thickness
active layer
wavelength
light
measuring
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JP2002343842A (ja
JP2002343842A5 (enExample
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大川　　誠
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Denso Corp
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Denso Corp
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Priority to US10/093,894 priority patent/US6645045B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2001215657A 2001-03-12 2001-07-16 半導体層の膜厚測定方法及び半導体基板の製造方法 Expired - Fee Related JP3946470B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001215657A JP3946470B2 (ja) 2001-03-12 2001-07-16 半導体層の膜厚測定方法及び半導体基板の製造方法
US10/093,894 US6645045B2 (en) 2001-03-12 2002-03-11 Method of measuring thickness of a semiconductor layer and method of manufacturing a semiconductor substrate

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-69184 2001-03-12
JP2001069184 2001-03-12
JP2001215657A JP3946470B2 (ja) 2001-03-12 2001-07-16 半導体層の膜厚測定方法及び半導体基板の製造方法

Related Child Applications (1)

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JP2004376264A Division JP4046117B2 (ja) 2001-03-12 2004-12-27 半導体層の膜厚測定方法及び半導体基板の製造方法

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JP2002343842A JP2002343842A (ja) 2002-11-29
JP2002343842A5 JP2002343842A5 (enExample) 2004-08-12
JP3946470B2 true JP3946470B2 (ja) 2007-07-18

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US20020173084A1 (en) 2002-11-21
US6645045B2 (en) 2003-11-11

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