JP2002343842A5 - - Google Patents

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Publication number
JP2002343842A5
JP2002343842A5 JP2001215657A JP2001215657A JP2002343842A5 JP 2002343842 A5 JP2002343842 A5 JP 2002343842A5 JP 2001215657 A JP2001215657 A JP 2001215657A JP 2001215657 A JP2001215657 A JP 2001215657A JP 2002343842 A5 JP2002343842 A5 JP 2002343842A5
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wavelength region
film thickness
analysis wavelength
dox
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JP2001215657A
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JP3946470B2 (ja
JP2002343842A (ja
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Priority to US10/093,894 priority patent/US6645045B2/en
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Publication of JP2002343842A5 publication Critical patent/JP2002343842A5/ja
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JP2001215657A 2001-03-12 2001-07-16 半導体層の膜厚測定方法及び半導体基板の製造方法 Expired - Fee Related JP3946470B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001215657A JP3946470B2 (ja) 2001-03-12 2001-07-16 半導体層の膜厚測定方法及び半導体基板の製造方法
US10/093,894 US6645045B2 (en) 2001-03-12 2002-03-11 Method of measuring thickness of a semiconductor layer and method of manufacturing a semiconductor substrate

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-69184 2001-03-12
JP2001069184 2001-03-12
JP2001215657A JP3946470B2 (ja) 2001-03-12 2001-07-16 半導体層の膜厚測定方法及び半導体基板の製造方法

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JP2004376264A Division JP4046117B2 (ja) 2001-03-12 2004-12-27 半導体層の膜厚測定方法及び半導体基板の製造方法

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JP2002343842A JP2002343842A (ja) 2002-11-29
JP2002343842A5 true JP2002343842A5 (enExample) 2004-08-12
JP3946470B2 JP3946470B2 (ja) 2007-07-18

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US (1) US6645045B2 (enExample)
JP (1) JP3946470B2 (enExample)

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JP5968783B2 (ja) 2009-11-03 2016-08-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ スペクトルの等高線図のピーク位置と時間の関係を使用する終点方法
JP5387451B2 (ja) * 2010-03-04 2014-01-15 信越半導体株式会社 Ｓｏｉウェーハの設計方法及び製造方法
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JP6544171B2 (ja) * 2015-09-16 2019-07-17 株式会社島津製作所 表面処理状況モニタリング装置
CN105674899B (zh) * 2016-01-26 2019-03-19 国家纳米科学中心 一种采用光谱椭偏仪对金属膜进行检测的方法
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CN109341554B (zh) * 2018-12-24 2020-09-04 上海集成电路研发中心有限公司 一种测量膜厚的装置及方法
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