JP3708637B2 - 液晶表示装置 - Google Patents

液晶表示装置 Download PDF

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Publication number
JP3708637B2
JP3708637B2 JP20537896A JP20537896A JP3708637B2 JP 3708637 B2 JP3708637 B2 JP 3708637B2 JP 20537896 A JP20537896 A JP 20537896A JP 20537896 A JP20537896 A JP 20537896A JP 3708637 B2 JP3708637 B2 JP 3708637B2
Authority
JP
Japan
Prior art keywords
shielding film
bus line
light shielding
film
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP20537896A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1031235A5 (enExample
JPH1031235A (ja
Inventor
宏勇 張
晃 武内
忠芳 宮本
淳 芳之内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd, Sharp Corp filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP20537896A priority Critical patent/JP3708637B2/ja
Priority to US08/891,697 priority patent/US5966193A/en
Publication of JPH1031235A publication Critical patent/JPH1031235A/ja
Publication of JPH1031235A5 publication Critical patent/JPH1031235A5/ja
Application granted granted Critical
Publication of JP3708637B2 publication Critical patent/JP3708637B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP20537896A 1996-07-15 1996-07-15 液晶表示装置 Expired - Lifetime JP3708637B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP20537896A JP3708637B2 (ja) 1996-07-15 1996-07-15 液晶表示装置
US08/891,697 US5966193A (en) 1996-07-15 1997-07-11 LCD device having coupling capacitances and shielding films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20537896A JP3708637B2 (ja) 1996-07-15 1996-07-15 液晶表示装置

Publications (3)

Publication Number Publication Date
JPH1031235A JPH1031235A (ja) 1998-02-03
JPH1031235A5 JPH1031235A5 (enExample) 2004-07-22
JP3708637B2 true JP3708637B2 (ja) 2005-10-19

Family

ID=16505843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20537896A Expired - Lifetime JP3708637B2 (ja) 1996-07-15 1996-07-15 液晶表示装置

Country Status (2)

Country Link
US (1) US5966193A (enExample)
JP (1) JP3708637B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103176323A (zh) * 2007-08-09 2013-06-26 精工爱普生株式会社 电光装置及电子设备

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US6088070A (en) 1997-01-17 2000-07-11 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode
JPH10221704A (ja) * 1997-02-07 1998-08-21 Sharp Corp 反射型液晶表示装置およびその製造方法
JP3716580B2 (ja) 1997-02-27 2005-11-16 セイコーエプソン株式会社 液晶装置及びその製造方法、並びに投写型表示装置
JP3784491B2 (ja) * 1997-03-28 2006-06-14 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
US6618100B2 (en) * 1997-07-23 2003-09-09 Seiko Epson Corporation Liquid crystal device, liquid crystal device manufacturing method and electronic apparatus
JP4271268B2 (ja) 1997-09-20 2009-06-03 株式会社半導体エネルギー研究所 イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置
JP3973787B2 (ja) * 1997-12-31 2007-09-12 三星電子株式会社 液晶表示装置及びその製造方法
CN101533192B (zh) 1998-02-09 2011-08-03 精工爱普生株式会社 液晶板及电子设备
JP3980156B2 (ja) 1998-02-26 2007-09-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
TW482918B (en) * 1998-03-19 2002-04-11 Seiko Epson Corp Liquid crystal device and projection-type display apparatus
JPH11274509A (ja) 1998-03-26 1999-10-08 Sanyo Electric Co Ltd 薄膜トランジスタ及び液晶表示装置
JPH11326954A (ja) * 1998-05-15 1999-11-26 Semiconductor Energy Lab Co Ltd 半導体装置
JP3433101B2 (ja) 1998-06-03 2003-08-04 三洋電機株式会社 表示装置
JP3702096B2 (ja) * 1998-06-08 2005-10-05 三洋電機株式会社 薄膜トランジスタ及び表示装置
JP2000075280A (ja) * 1998-08-28 2000-03-14 Sony Corp 液晶表示装置
JP3141860B2 (ja) * 1998-10-28 2001-03-07 ソニー株式会社 液晶表示装置の製造方法
US6617644B1 (en) * 1998-11-09 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4758868B2 (ja) * 1998-11-26 2011-08-31 セイコーエプソン株式会社 電気光学装置及び電子機器
CN1153180C (zh) 1998-11-26 2004-06-09 精工爱普生株式会社 电光装置及其制造方法和电子装置
US6657230B1 (en) 1998-11-30 2003-12-02 Seiko Epson Corporation Electro-optical device having a symmetrically located contact hole and method of producing the same
US6850292B1 (en) * 1998-12-28 2005-02-01 Seiko Epson Corporation Electric-optic device, method of fabricating the same, and electronic apparatus
US6590229B1 (en) 1999-01-21 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for production thereof
JP4666710B2 (ja) * 1999-01-21 2011-04-06 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6576926B1 (en) 1999-02-23 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
JP2000258798A (ja) * 1999-03-05 2000-09-22 Sanyo Electric Co Ltd 表示装置
US6531993B1 (en) 1999-03-05 2003-03-11 Semiconductor Energy Laboratory Co., Ltd. Active matrix type display device
US6690434B1 (en) 1999-03-15 2004-02-10 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal display device
US6475836B1 (en) 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6861670B1 (en) * 1999-04-01 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multi-layer wiring
US6583471B1 (en) * 1999-06-02 2003-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having first and second insulating films
JP4666723B2 (ja) 1999-07-06 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW526355B (en) 1999-07-14 2003-04-01 Sanyo Electric Co Reflection type liquid crystal display device
JP4403329B2 (ja) * 1999-08-30 2010-01-27 ソニー株式会社 液晶表示装置の製造方法
TW478014B (en) 1999-08-31 2002-03-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing thereof
CN1195243C (zh) * 1999-09-30 2005-03-30 三星电子株式会社 用于液晶显示器的薄膜晶体管阵列屏板及其制造方法
JP3374911B2 (ja) * 1999-09-30 2003-02-10 日本電気株式会社 透過液晶パネル、画像表示装置、パネル製造方法
US6587086B1 (en) 1999-10-26 2003-07-01 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6646287B1 (en) 1999-11-19 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with tapered gate and insulating film
US6750835B2 (en) * 1999-12-27 2004-06-15 Semiconductor Energy Laboratory Co., Ltd. Image display device and driving method thereof
JP3838332B2 (ja) * 2000-01-24 2006-10-25 日本電気株式会社 透過型液晶表示装置及び液晶プロジェクタ装置
TW495854B (en) 2000-03-06 2002-07-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW513753B (en) 2000-03-27 2002-12-11 Semiconductor Energy Lab Semiconductor display device and manufacturing method thereof
WO2001082273A1 (en) * 2000-04-21 2001-11-01 Seiko Epson Corporation Electrooptical device
US8610645B2 (en) * 2000-05-12 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Display device
KR100623989B1 (ko) * 2000-05-23 2006-09-13 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그의 수리 방법
US6602765B2 (en) * 2000-06-12 2003-08-05 Seiko Epson Corporation Fabrication method of thin-film semiconductor device
TW504846B (en) 2000-06-28 2002-10-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4684170B2 (ja) * 2000-06-28 2011-05-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4896314B2 (ja) * 2000-08-04 2012-03-14 株式会社半導体エネルギー研究所 表示装置
US6542205B2 (en) * 2000-08-04 2003-04-01 Semiconductor Energy Laboratory Co., Ltd. Display device
US6636284B2 (en) * 2000-08-11 2003-10-21 Seiko Epson Corporation System and method for providing an electro-optical device having light shield layers
JP4986351B2 (ja) * 2000-09-06 2012-07-25 株式会社半導体エネルギー研究所 半導体装置
US6720577B2 (en) * 2000-09-06 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TW575777B (en) * 2001-03-30 2004-02-11 Sanyo Electric Co Active matrix type display device
US6734463B2 (en) * 2001-05-23 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a window
JP3736513B2 (ja) 2001-10-04 2006-01-18 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
KR100629734B1 (ko) * 2002-01-08 2006-09-29 일진디스플레이(주) 고온 폴리 실리콘 액정 디스플레이 패널 및 그 제조방법
JP3791517B2 (ja) * 2002-10-31 2006-06-28 セイコーエプソン株式会社 電気光学装置及び電子機器
KR100508001B1 (ko) * 2002-12-30 2005-08-17 엘지.필립스 엘시디 주식회사 구동회로 일체형 액정표시장치용 어레이 기판의 제조 방법
KR100604762B1 (ko) * 2004-04-23 2006-07-26 일진디스플레이(주) 액정 디스플레이 패널 및 그 제조 방법
JP2006243261A (ja) * 2005-03-02 2006-09-14 Sony Corp 液晶パネル、画像表示装置及び投射型画像表示装置
KR20070039237A (ko) * 2005-10-07 2007-04-11 삼성전자주식회사 표시판 및 그 제조 방법
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JP4197016B2 (ja) * 2006-07-24 2008-12-17 セイコーエプソン株式会社 電気光学装置用基板及び電気光学装置、並びに電子機器
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JP5422626B2 (ja) * 2011-10-03 2014-02-19 株式会社半導体エネルギー研究所 半導体装置
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CN104022126B (zh) * 2014-05-28 2017-04-12 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示装置
CN104950541B (zh) * 2015-07-20 2018-05-01 深圳市华星光电技术有限公司 Boa型液晶显示面板及其制作方法
CN108231595B (zh) * 2018-01-02 2020-05-01 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板、显示装置
CN208622728U (zh) * 2018-09-07 2019-03-19 京东方科技集团股份有限公司 一种阵列基板、显示面板及显示装置
JP2020076951A (ja) * 2018-09-19 2020-05-21 シャープ株式会社 表示装置
TWI693460B (zh) * 2019-05-24 2020-05-11 友達光電股份有限公司 畫素結構
CN110190072B (zh) * 2019-06-20 2021-09-07 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板

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JPS6045219A (ja) * 1983-08-23 1985-03-11 Toshiba Corp アクテイブマトリクス型表示装置
JPS60213062A (ja) * 1984-04-09 1985-10-25 Hosiden Electronics Co Ltd 薄膜トランジスタの製造方法
JPH0777264B2 (ja) * 1986-04-02 1995-08-16 三菱電機株式会社 薄膜トランジスタの製造方法
JPH0421823A (ja) * 1990-05-16 1992-01-24 Hosiden Corp 液晶表示素子の点欠陥の黒欠陥化法及び液晶表示素子

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CN103176323A (zh) * 2007-08-09 2013-06-26 精工爱普生株式会社 电光装置及电子设备
CN103176323B (zh) * 2007-08-09 2016-05-11 精工爱普生株式会社 电光装置及电子设备

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Publication number Publication date
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