JP3615206B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3615206B2
JP3615206B2 JP2002247847A JP2002247847A JP3615206B2 JP 3615206 B2 JP3615206 B2 JP 3615206B2 JP 2002247847 A JP2002247847 A JP 2002247847A JP 2002247847 A JP2002247847 A JP 2002247847A JP 3615206 B2 JP3615206 B2 JP 3615206B2
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Japan
Prior art keywords
solder
bump
electrode
resin film
film
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Expired - Fee Related
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JP2002247847A
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English (en)
Japanese (ja)
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JP2003218152A (ja
Inventor
誠樹 作山
正行 落合
一郎 山口
城次 藤森
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Fujitsu Ltd
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Fujitsu Ltd
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Priority to JP2002247847A priority Critical patent/JP3615206B2/ja
Priority to US10/291,766 priority patent/US6689639B2/en
Priority to KR1020020070402A priority patent/KR100963372B1/ko
Priority to TW091133424A priority patent/TWI275144B/zh
Priority to CNB021495823A priority patent/CN1220250C/zh
Publication of JP2003218152A publication Critical patent/JP2003218152A/ja
Application granted granted Critical
Publication of JP3615206B2 publication Critical patent/JP3615206B2/ja
Priority to KR1020080125793A priority patent/KR100894929B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002247847A 2001-11-15 2002-08-27 半導体装置の製造方法 Expired - Fee Related JP3615206B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002247847A JP3615206B2 (ja) 2001-11-15 2002-08-27 半導体装置の製造方法
US10/291,766 US6689639B2 (en) 2001-11-15 2002-11-12 Method of making semiconductor device
KR1020020070402A KR100963372B1 (ko) 2001-11-15 2002-11-13 반도체 장치의 제조 방법
TW091133424A TWI275144B (en) 2001-11-15 2002-11-14 Method of manufacturing semiconductor device
CNB021495823A CN1220250C (zh) 2001-11-15 2002-11-15 半导体器件的制造方法
KR1020080125793A KR100894929B1 (ko) 2001-11-15 2008-12-11 반도체 장치의 제조 방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-350720 2001-11-15
JP2001350720 2001-11-15
JP2002247847A JP3615206B2 (ja) 2001-11-15 2002-08-27 半導体装置の製造方法

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JP2004238471A Division JP4025322B2 (ja) 2001-11-15 2004-08-18 半導体装置の製造方法

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JP2003218152A JP2003218152A (ja) 2003-07-31
JP3615206B2 true JP3615206B2 (ja) 2005-02-02

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US (1) US6689639B2 (ko)
JP (1) JP3615206B2 (ko)
KR (2) KR100963372B1 (ko)
CN (1) CN1220250C (ko)
TW (1) TWI275144B (ko)

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US6732913B2 (en) * 2001-04-26 2004-05-11 Advanpack Solutions Pte Ltd. Method for forming a wafer level chip scale package, and package formed thereby
JP2003198117A (ja) * 2001-12-28 2003-07-11 Matsushita Electric Ind Co Ltd はんだ付け方法および接合構造体
JP2004349440A (ja) * 2003-05-22 2004-12-09 Renesas Technology Corp フリップチップ実装方法
TWI220304B (en) * 2003-06-20 2004-08-11 Advanced Semiconductor Eng Flip-chip package substrate and flip-chip bonding process thereof
US7276801B2 (en) * 2003-09-22 2007-10-02 Intel Corporation Designs and methods for conductive bumps
JP4726409B2 (ja) * 2003-09-26 2011-07-20 京セラ株式会社 半導体素子及びその製造方法
JP2005116632A (ja) 2003-10-03 2005-04-28 Rohm Co Ltd 半導体装置の製造方法および半導体装置
JP2005175128A (ja) * 2003-12-10 2005-06-30 Fujitsu Ltd 半導体装置及びその製造方法
JP3829860B2 (ja) * 2004-01-30 2006-10-04 株式会社デンソー 半導体チップの製造方法
JP2005268425A (ja) * 2004-03-17 2005-09-29 Toshiba Corp 半導体装置およびその製造方法
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