JP3587743B2 - フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。 - Google Patents

フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。 Download PDF

Info

Publication number
JP3587743B2
JP3587743B2 JP23893199A JP23893199A JP3587743B2 JP 3587743 B2 JP3587743 B2 JP 3587743B2 JP 23893199 A JP23893199 A JP 23893199A JP 23893199 A JP23893199 A JP 23893199A JP 3587743 B2 JP3587743 B2 JP 3587743B2
Authority
JP
Japan
Prior art keywords
photoresist
formula
following formula
substituted
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP23893199A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000086726A (ja
Inventor
根守 李
次元 高
載昌 鄭
▲みん▼鎬 鄭
基鎬 白
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-1998-0034694A external-priority patent/KR100448860B1/ko
Priority claimed from KR10-1998-0039079A external-priority patent/KR100400292B1/ko
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of JP2000086726A publication Critical patent/JP2000086726A/ja
Application granted granted Critical
Publication of JP3587743B2 publication Critical patent/JP3587743B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D493/00Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/08Bridged systems
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/74Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C69/753Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of polycyclic acids
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F32/08Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having two condensed rings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
JP23893199A 1998-08-26 1999-08-25 フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。 Expired - Fee Related JP3587743B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-1998-0034694A KR100448860B1 (ko) 1998-08-26 1998-08-26 포토레지스트단량체,그의공중합체및이를포함하는포토레지스트조성물
KR10-1998-0039079A KR100400292B1 (ko) 1998-09-21 1998-09-21 신규의포토레지스트용모노머,그의공중합체및이를이용한포토레지스트조성물
KR1998P-34694 1998-09-21
KR1998P-39079 1998-09-21

Publications (2)

Publication Number Publication Date
JP2000086726A JP2000086726A (ja) 2000-03-28
JP3587743B2 true JP3587743B2 (ja) 2004-11-10

Family

ID=26634051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23893199A Expired - Fee Related JP3587743B2 (ja) 1998-08-26 1999-08-25 フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。

Country Status (9)

Country Link
US (2) US6410670B1 (it)
JP (1) JP3587743B2 (it)
CN (1) CN1240666C (it)
DE (1) DE19940516A1 (it)
FR (1) FR2782715B1 (it)
GB (1) GB2340831B (it)
IT (1) IT1307051B1 (it)
NL (1) NL1012916C2 (it)
TW (1) TW535033B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6569971B2 (en) * 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
KR100634973B1 (ko) 1999-04-09 2006-10-16 센쥬긴소쿠고교가부시키가이샤 솔더볼 및 솔더볼의 피복방법
KR100301063B1 (ko) * 1999-07-29 2001-09-22 윤종용 감광성 중합체 및 이들을 포함하는 화학 증폭형 포토레지스트 조성물
KR100535149B1 (ko) * 1999-08-17 2005-12-07 주식회사 하이닉스반도체 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물
US6306554B1 (en) * 2000-05-09 2001-10-23 Shipley Company, L.L.C. Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same
KR100527533B1 (ko) 2000-06-21 2005-11-09 주식회사 하이닉스반도체 Tips 공정용 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물
KR100506882B1 (ko) * 2000-07-13 2005-08-08 주식회사 하이닉스반도체 Tips용 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물
JP2002091003A (ja) * 2000-09-19 2002-03-27 Tokyo Ohka Kogyo Co Ltd 薄膜形成用ポジ型レジスト組成物及びそれを用いた感光材料
US6469220B2 (en) * 2000-12-25 2002-10-22 Shin-Etsu Chemical Co., Ltd. Tertiary alcohol compounds having an alicyclic structure
JP2003020313A (ja) * 2001-07-09 2003-01-24 Shin Etsu Chem Co Ltd 脂環構造を有する新規エポキシ化合物、高分子化合物、レジスト材料、及びパターン形成方法
JP2006511628A (ja) * 2002-05-07 2006-04-06 ハネウェル・インターナショナル・インコーポレーテッド フッ素化ポリマー
US7674847B2 (en) 2003-02-21 2010-03-09 Promerus Llc Vinyl addition polycyclic olefin polymers prepared with non-olefinic chain transfer agents and uses thereof
JP5756672B2 (ja) * 2010-04-27 2015-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 光酸発生剤およびこれを含むフォトレジスト
JP6445525B2 (ja) * 2014-03-06 2018-12-26 住友ベークライト株式会社 ポリマー、感光性樹脂組成物および電子装置
KR102084433B1 (ko) * 2017-02-23 2020-03-04 동우 화인켐 주식회사 네가티브형 컬러필터의 제조방법, 이로부터 제조된 네가티브형 컬러필터 및 화상표시장치
CN115785443B (zh) * 2022-12-01 2024-03-19 无锡阿科力科技股份有限公司 一种光学级聚合物及其制备方法和应用

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB768813A (en) 1954-05-07 1957-02-20 Geigy Ag J R Substituted 1.2-diphenyl-3.5-dioxo-pyrazolidines and processes for the production thereof
US3370047A (en) 1964-09-03 1968-02-20 Union Carbide Corp Pour point depressants and lubricating compositions thereof
NL6914466A (it) 1969-09-24 1971-03-26
US3715330A (en) 1970-05-20 1973-02-06 Asahi Chemical Ind Self-thermoset unsaturated polyesters and method for preparation thereof
US3672025A (en) 1970-12-04 1972-06-27 Artos Engineering Co Terminal applicator
GB1335095A (en) 1971-01-14 1973-10-24 Kodak Ltd Polycondensation copolymers
JPS5818369B2 (ja) 1973-09-05 1983-04-12 ジェイエスアール株式会社 ノルボルネンカルボンサンアミドオヨビ / マタハイミドルイノ ( キヨウ ) ジユウゴウタイノセイゾウホウホウ
US4106943A (en) 1973-09-27 1978-08-15 Japan Synthetic Rubber Co., Ltd. Photosensitive cross-linkable azide containing polymeric composition
JPS5628257B2 (it) 1973-09-27 1981-06-30
US4202955A (en) 1975-12-16 1980-05-13 Borg-Warner Corporation Copolymers of cyclic conjugated dienes and maleic anhydride
US4126738A (en) 1976-02-17 1978-11-21 Borg-Warner Corporation Copolymers of 5-norbornene 2,3-dicarboxylic anhydride and maleic anhydride
JPS57165420A (en) * 1981-04-07 1982-10-12 Seiko Kagaku Kogyo Co Ltd Production of water-dispersed urethane polymer
US4440850A (en) 1981-07-23 1984-04-03 Ciba-Geigy Corporation Photopolymerisation process with two exposures of a single layer
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4857435A (en) 1983-11-01 1989-08-15 Hoechst Celanese Corporation Positive photoresist thermally stable compositions and elements having deep UV response with maleimide copolymer
JPH0717740B2 (ja) 1986-10-01 1995-03-01 帝人株式会社 架橋重合体成型物の製造方法
US4948856A (en) 1987-05-22 1990-08-14 B. F. Goodrich Company Homogeneous addition copolymers of ethylene and cycloolefin monomers and method for producing same
US4986648A (en) 1987-06-18 1991-01-22 Hitachi Chemical Company, Ltd. Lens and optical disc base plate obtained from copolymer of norbornyl (meth)acrylate
DE3721741A1 (de) 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
KR900700923A (ko) 1988-02-17 1990-08-17 야마구찌 도시아끼 포토레지스트 조성물
JPH0251511A (ja) 1988-08-15 1990-02-21 Mitsui Petrochem Ind Ltd 極性基含有環状オレフイン系共重合体およびその製法
DE3922546A1 (de) 1989-07-08 1991-01-17 Hoechst Ag Verfahren zur herstellung von cycloolefinpolymeren
US5252427A (en) 1990-04-10 1993-10-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions
EP0485631B1 (en) 1990-06-06 1995-11-15 Mitsui Petrochemical Industries, Ltd. Polyolefin resin composition
JP3000745B2 (ja) 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
TW304235B (it) 1992-04-29 1997-05-01 Ocg Microelectronic Materials
JP2715881B2 (ja) 1993-12-28 1998-02-18 日本電気株式会社 感光性樹脂組成物およびパターン形成方法
JP3495503B2 (ja) 1995-04-21 2004-02-09 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 架橋されたポリマー
US5705503A (en) 1995-05-25 1998-01-06 Goodall; Brian Leslie Addition polymers of polycycloolefins containing functional substituents
DE69520052T2 (de) 1995-08-10 2001-08-23 Mitsubishi Rayon Co Wärmehärtbare überzugszusammensetzung
JP3804138B2 (ja) 1996-02-09 2006-08-02 Jsr株式会社 ArFエキシマレーザー照射用感放射線性樹脂組成物
US6232417B1 (en) 1996-03-07 2001-05-15 The B. F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
WO1997033198A1 (en) 1996-03-07 1997-09-12 The B.F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
CA2199567C (en) * 1996-03-20 2003-01-14 Volker Rheinberger Functionalized and polymerizable polymer
US5763556A (en) 1996-05-21 1998-06-09 Exxon Chemical Patents Inc. Copolymers of ethylene and geminally disubstituted olefins
US6034150A (en) 1996-08-23 2000-03-07 University Of Southern Mississippi Polymerization processes using aliphatic maleimides
KR100261022B1 (ko) 1996-10-11 2000-09-01 윤종용 화학증폭형 레지스트 조성물
JP3880151B2 (ja) * 1996-10-11 2007-02-14 キヤノン株式会社 水溶性付加重合体、それを用いた水系インク、該水系インクを用いたインクジェット記録方法及びインクジェット捺染方法
KR100211548B1 (ko) 1996-12-20 1999-08-02 김영환 원자외선용 감광막 공중합체 및 그 제조방법
KR100265597B1 (ko) 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
KR100220953B1 (ko) 1996-12-31 1999-10-01 김영환 아미드 또는 이미드를 도입한 ArF 감광막 수지
KR100225956B1 (ko) 1997-01-10 1999-10-15 김영환 아민을 도입한 에이알에프 감광막 수지
KR100195583B1 (ko) 1997-04-08 1999-06-15 박찬구 양성 포토레지스트 제조용 공중합체 및 이를 함유하는 화학증폭형 양성 포토레지스트 조성물
EP0878738B1 (en) 1997-05-12 2002-01-09 Fuji Photo Film Co., Ltd. Positive resist composition
KR100254472B1 (ko) 1997-11-01 2000-05-01 김영환 신규한 말레이미드계 또는 지방족 환형 올레핀계 단량체와 이들 단량체들의 공중합체수지 및 이수지를 이용한 포토레지스트
KR100252546B1 (ko) 1997-11-01 2000-04-15 김영환 공중합체 수지와 포토레지스트 및 그 제조방법
KR100321080B1 (ko) 1997-12-29 2002-11-22 주식회사 하이닉스반도체 공중합체수지와이의제조방법및이수지를이용한포토레지스트
KR100334387B1 (ko) 1997-12-31 2002-11-22 주식회사 하이닉스반도체 공중합체수지와그제조방법및이수지를이용한포토레지스트
KR100520148B1 (ko) 1997-12-31 2006-05-12 주식회사 하이닉스반도체 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
KR19990081722A (ko) 1998-04-30 1999-11-15 김영환 카르복실기 함유 지환족 유도체 및 그의 제조방법
KR100376984B1 (ko) 1998-04-30 2003-07-16 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR100376983B1 (ko) 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR100419028B1 (ko) 1998-05-13 2004-07-19 주식회사 하이닉스반도체 옥사비시클로화합물,이화합물이도입된포토레지스트중합체및이를이용한포토레지스트미세패턴의형성방법
KR100403325B1 (ko) 1998-07-27 2004-03-24 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한포토레지스트조성물
KR20000015014A (ko) 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물

Also Published As

Publication number Publication date
US20020091216A1 (en) 2002-07-11
IT1307051B1 (it) 2001-10-23
NL1012916C2 (nl) 2002-12-03
TW535033B (en) 2003-06-01
GB2340831B (en) 2004-05-12
JP2000086726A (ja) 2000-03-28
US6410670B1 (en) 2002-06-25
NL1012916A1 (nl) 2000-02-29
ITTO990725A1 (it) 2001-02-26
FR2782715A1 (fr) 2000-03-03
GB2340831A (en) 2000-03-01
CN1247858A (zh) 2000-03-22
US6586619B2 (en) 2003-07-01
GB9920124D0 (en) 1999-10-27
FR2782715B1 (fr) 2004-09-10
CN1240666C (zh) 2006-02-08
DE19940516A1 (de) 2000-03-09

Similar Documents

Publication Publication Date Title
US6987155B2 (en) Polymers for photoresist and photoresist compositions using the same
JP4067251B2 (ja) フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、及び、フォトレジストパターン形成方法
JP3587743B2 (ja) フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
JPH11171935A (ja) 共重合体樹脂とその製造方法、前記共重合体樹脂を含むフォトレジストとその製造方法、および半導体素子
JP3646020B2 (ja) フォトレジスト単量体とその製造方法、フォトレジスト共重合体、フォトレジスト組成物、フォトレジストパターンの形成方法、及び、半導体素子
KR100362937B1 (ko) 신규의포토레지스트가교제,이를포함하는포토레지스트중합체및포토레지스트조성물
JP3869166B2 (ja) フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子
JP4222700B2 (ja) フォトレジスト架橋剤、フォトレジスト共重合体とその製造方法、フォトレジスト組成物及びフォトレジストパターン形成方法
KR20000009572A (ko) 신규한 중합체 및 이를 이용한 포토레지스트 조성물
US6368770B1 (en) Photoresist monomers, polymers thereof, and photoresist compositions containing the same
JP3705734B2 (ja) フォトレジスト単量体とその製造方法、フォトレジスト用共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法
JP3515949B2 (ja) フォトレジスト単量体とその製造方法、フォトレジスト用共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び、半導体素子
US6387589B1 (en) Photoresist polymers and photoresist compositions containing the same
KR100400292B1 (ko) 신규의포토레지스트용모노머,그의공중합체및이를이용한포토레지스트조성물
KR100520167B1 (ko) 신규한 포토레지스트 단량체, 그의 중합체 및 이를 함유한포토레지스트 조성물
KR100448860B1 (ko) 포토레지스트단량체,그의공중합체및이를포함하는포토레지스트조성물
KR100400293B1 (ko) 포토레지스트단량체,그의중합체및이를이용한포토레지스트조성물
KR100400295B1 (ko) 신규한포토레지스트모노머,그의공중합체및이를이용한포토레지스트조성물및제조방법
KR100362936B1 (ko) 신규한포토레지스트의중합체및그를이용한포토레지스트조성물
US6492088B1 (en) Photoresist monomers polymers thereof and photoresist compositions containing the same
KR100362935B1 (ko) 신규한포토레지스트중합체및이를이용한포토레지스트조성물
KR100557620B1 (ko) 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040128

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040302

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040601

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20040727

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20040810

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080820

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080820

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090820

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090820

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100820

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100820

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110820

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120820

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130820

Year of fee payment: 9

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees