JP2017533589A5 - - Google Patents
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- JP2017533589A5 JP2017533589A5 JP2017522023A JP2017522023A JP2017533589A5 JP 2017533589 A5 JP2017533589 A5 JP 2017533589A5 JP 2017522023 A JP2017522023 A JP 2017522023A JP 2017522023 A JP2017522023 A JP 2017522023A JP 2017533589 A5 JP2017533589 A5 JP 2017533589A5
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- JP
- Japan
- Prior art keywords
- silicon nitride
- silicon
- films
- nitride film
- high quality
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052581 Si3N4 Inorganic materials 0.000 description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- YSCFTYILLCWAFW-UHFFFAOYSA-N [SiH3]N([SiH3])[SiH2]N([SiH3])[SiH3] Chemical compound [SiH3]N([SiH3])[SiH2]N([SiH3])[SiH3] YSCFTYILLCWAFW-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462068248P | 2014-10-24 | 2014-10-24 | |
| US62/068,248 | 2014-10-24 | ||
| PCT/US2015/057045 WO2016065221A1 (en) | 2014-10-24 | 2015-10-23 | Compositions and methods using same for deposition of silicon-containing films |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017533589A JP2017533589A (ja) | 2017-11-09 |
| JP2017533589A5 true JP2017533589A5 (cg-RX-API-DMAC7.html) | 2021-02-18 |
| JP6871161B2 JP6871161B2 (ja) | 2021-05-12 |
Family
ID=54477308
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017522032A Withdrawn JP2017535077A (ja) | 2014-10-24 | 2015-10-23 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
| JP2017522023A Active JP6871161B2 (ja) | 2014-10-24 | 2015-10-23 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
| JP2019164049A Active JP6949912B2 (ja) | 2014-10-24 | 2019-09-09 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
| JP2021152399A Active JP7152576B2 (ja) | 2014-10-24 | 2021-09-17 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017522032A Withdrawn JP2017535077A (ja) | 2014-10-24 | 2015-10-23 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019164049A Active JP6949912B2 (ja) | 2014-10-24 | 2019-09-09 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
| JP2021152399A Active JP7152576B2 (ja) | 2014-10-24 | 2021-09-17 | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (5) | US10316407B2 (cg-RX-API-DMAC7.html) |
| EP (3) | EP3431629B1 (cg-RX-API-DMAC7.html) |
| JP (4) | JP2017535077A (cg-RX-API-DMAC7.html) |
| KR (3) | KR102188751B1 (cg-RX-API-DMAC7.html) |
| CN (4) | CN113373428B (cg-RX-API-DMAC7.html) |
| SG (3) | SG10202000545RA (cg-RX-API-DMAC7.html) |
| TW (3) | TWI658168B (cg-RX-API-DMAC7.html) |
| WO (2) | WO2016065219A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (91)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105849221B (zh) | 2013-09-27 | 2019-06-18 | 乔治洛德方法研究和开发液化空气有限公司 | 胺取代的三甲硅烷基胺和三-二甲硅烷基胺化合物 |
| US11549181B2 (en) * | 2013-11-22 | 2023-01-10 | Applied Materials, Inc. | Methods for atomic layer deposition of SiCO(N) using halogenated silylamides |
| KR102188751B1 (ko) * | 2014-10-24 | 2020-12-08 | 버슘머트리얼즈 유에스, 엘엘씨 | 실리콘-함유 막을 증착시키기 위한 조성물 및 이를 사용하는 방법 |
| US10354860B2 (en) * | 2015-01-29 | 2019-07-16 | Versum Materials Us, Llc | Method and precursors for manufacturing 3D devices |
| US9777025B2 (en) * | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
| US11124876B2 (en) | 2015-03-30 | 2021-09-21 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
| TWI716333B (zh) * | 2015-03-30 | 2021-01-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 碳矽烷與氨、胺類及脒類之觸媒去氫耦合 |
| EP3307745B1 (en) * | 2015-06-12 | 2020-04-01 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition processes for forming silicon- and nitrogen-containing thin films |
| EP3307744B1 (en) * | 2015-06-12 | 2020-09-02 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition processes for forming silicon- and oxygen-containing thin films |
| US20170114465A1 (en) * | 2015-10-22 | 2017-04-27 | Applied Materials, Inc. | Methods Of Depositing Flowable Films Comprising SiO and SiN |
| US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| US12454753B2 (en) * | 2018-06-15 | 2025-10-28 | Versum Materials Us, Llc | Compositions and methods using same for deposition of silicon-containing film |
| KR102378021B1 (ko) * | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
| WO2017223323A1 (en) * | 2016-06-25 | 2017-12-28 | Applied Materials, Inc. | Flowable amorphous silicon films for gapfill applications |
| US9929006B2 (en) | 2016-07-20 | 2018-03-27 | Micron Technology, Inc. | Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures |
| US20180033614A1 (en) * | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
| US10468244B2 (en) * | 2016-08-30 | 2019-11-05 | Versum Materials Us, Llc | Precursors and flowable CVD methods for making low-K films to fill surface features |
| US11017998B2 (en) | 2016-08-30 | 2021-05-25 | Versum Materials Us, Llc | Precursors and flowable CVD methods for making low-K films to fill surface features |
| WO2018063303A1 (en) * | 2016-09-30 | 2018-04-05 | Intel Corporation | Dielectric gap-fill material deposition |
| US11735413B2 (en) * | 2016-11-01 | 2023-08-22 | Versum Materials Us, Llc | Precursors and flowable CVD methods for making low-k films to fill surface features |
| US10647578B2 (en) * | 2016-12-11 | 2020-05-12 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications |
| US10192734B2 (en) * | 2016-12-11 | 2019-01-29 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude | Short inorganic trisilylamine-based polysilazanes for thin film deposition |
| US10822458B2 (en) * | 2017-02-08 | 2020-11-03 | Versum Materials Us, Llc | Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films |
| US11591692B2 (en) * | 2017-02-08 | 2023-02-28 | Versum Materials Us, Llc | Organoamino-polysiloxanes for deposition of silicon-containing films |
| US10176984B2 (en) | 2017-02-14 | 2019-01-08 | Lam Research Corporation | Selective deposition of silicon oxide |
| US10242866B2 (en) | 2017-03-08 | 2019-03-26 | Lam Research Corporation | Selective deposition of silicon nitride on silicon oxide using catalytic control |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| KR102271768B1 (ko) | 2017-04-07 | 2021-06-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 반응성 어닐링을 사용하는 갭충전 |
| US10559461B2 (en) | 2017-04-19 | 2020-02-11 | Lam Research Corporation | Selective deposition with atomic layer etch reset |
| CN114875388A (zh) * | 2017-05-05 | 2022-08-09 | Asm Ip 控股有限公司 | 用于受控形成含氧薄膜的等离子体增强沉积方法 |
| US11177127B2 (en) * | 2017-05-24 | 2021-11-16 | Versum Materials Us, Llc | Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films |
| US12057310B2 (en) | 2018-05-22 | 2024-08-06 | Versum Materials Us, Llc | Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| US10847360B2 (en) * | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
| CN110678973B (zh) | 2017-06-02 | 2023-09-19 | 应用材料公司 | 碳化硼硬掩模的干式剥除 |
| TWI722292B (zh) * | 2017-07-05 | 2021-03-21 | 美商應用材料股份有限公司 | 氮含量高的氮化矽膜 |
| US10269571B2 (en) | 2017-07-12 | 2019-04-23 | Applied Materials, Inc. | Methods for fabricating nanowire for semiconductor applications |
| KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| SG11202001450UA (en) | 2017-09-12 | 2020-03-30 | Applied Materials Inc | Apparatus and methods for manufacturing semiconductor structures using protective barrier layer |
| TWI633201B (zh) * | 2017-10-24 | 2018-08-21 | 國立交通大學 | 非晶碳薄膜、其製造方法與包含其之光學系統 |
| US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
| JP7112490B2 (ja) | 2017-11-11 | 2022-08-03 | マイクロマテリアルズ エルエルシー | 高圧処理チャンバのためのガス供給システム |
| SG11202003438QA (en) | 2017-11-16 | 2020-05-28 | Applied Materials Inc | High pressure steam anneal processing apparatus |
| JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高圧処理システムのためのコンデンサシステム |
| US10460930B2 (en) | 2017-11-22 | 2019-10-29 | Lam Research Corporation | Selective growth of SiO2 on dielectric surfaces in the presence of copper |
| WO2019147400A1 (en) | 2018-01-24 | 2019-08-01 | Applied Materials, Inc. | Seam healing using high pressure anneal |
| CN111902359A (zh) | 2018-02-21 | 2020-11-06 | 乔治洛德方法研究和开发液化空气有限公司 | 全氢聚硅氮烷组合物和用于使用其形成氧化物膜的方法 |
| TWI793262B (zh) * | 2018-02-21 | 2023-02-21 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 全氫聚矽氮烷組成物和用於使用其形成氮化物膜之方法 |
| JP7379353B2 (ja) * | 2018-02-22 | 2023-11-14 | アプライド マテリアルズ インコーポレイテッド | より優れた膜品質を可能にするためにマスク基板を処理する方法 |
| KR102899918B1 (ko) | 2018-03-02 | 2025-12-12 | 램 리써치 코포레이션 | 가수분해를 사용한 선택적인 증착 |
| EP3762962A4 (en) | 2018-03-09 | 2021-12-08 | Applied Materials, Inc. | HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS |
| US12365986B2 (en) | 2018-03-28 | 2025-07-22 | Applied Materials, Inc. | Remote capacitively coupled plasma deposition of amorphous silicon |
| US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
| US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
| JP7113670B2 (ja) * | 2018-06-08 | 2022-08-05 | 東京エレクトロン株式会社 | Ａｌｄ成膜方法およびａｌｄ成膜装置 |
| TWI720506B (zh) * | 2018-06-11 | 2021-03-01 | 美商慧盛材料美國責任有限公司 | 用於沉積含矽膜的組合物及方法 |
| WO2019241763A1 (en) * | 2018-06-15 | 2019-12-19 | Versum Materials Us, Llc | Siloxane compositions and methods for using the compositions to deposit silicon containing films |
| US20200003937A1 (en) * | 2018-06-29 | 2020-01-02 | Applied Materials, Inc. | Using flowable cvd to gap fill micro/nano structures for optical components |
| JP6909762B2 (ja) | 2018-07-23 | 2021-07-28 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| US10483099B1 (en) * | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
| US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
| KR102409869B1 (ko) | 2018-08-10 | 2022-06-16 | 버슘머트리얼즈 유에스, 엘엘씨 | 규소 화합물 및 이를 사용하여 막을 증착시키는 방법 |
| CN110952074B (zh) * | 2018-08-10 | 2023-06-13 | 弗萨姆材料美国有限责任公司 | 硅化合物和使用硅化合物沉积膜的方法 |
| US10985010B2 (en) * | 2018-08-29 | 2021-04-20 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
| JP7179172B6 (ja) | 2018-10-30 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 半導体用途の構造体をエッチングするための方法 |
| JP2022507390A (ja) | 2018-11-16 | 2022-01-18 | アプライド マテリアルズ インコーポレイテッド | 強化拡散プロセスを使用する膜の堆積 |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US12368042B2 (en) | 2018-12-21 | 2025-07-22 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Precursors and processes for deposition of Si-containing films using ALD at temperature of 550° C. or higher |
| JP7553454B2 (ja) * | 2019-02-05 | 2024-09-18 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | 炭素ドープされた酸化ケイ素の堆積 |
| KR102783961B1 (ko) * | 2019-03-20 | 2025-03-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 저온의 열 산화물 품질에서 두꺼운 산화물 막들을 성장시키는 방법 |
| WO2020257550A1 (en) * | 2019-06-21 | 2020-12-24 | Versum Materials Us, Llc | Compositions and methods using same for deposition of silicon-containing film |
| KR102829813B1 (ko) * | 2019-10-08 | 2025-07-03 | 에스케이트리켐 주식회사 | 금속 함유 박막 형성을 위한 신규 전구체 및 이를 이용한 금속 함유 박막 형성 방법 및 상기 금속 함유 박막을 포함하는 반도체 소자. |
| US11482414B2 (en) | 2019-12-18 | 2022-10-25 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Ultra-low temperature ALD to form high-quality Si-containing film |
| KR102818620B1 (ko) * | 2019-12-20 | 2025-06-10 | 삼성전자주식회사 | 물질막 형성 방법과, 집적회로 소자 및 그 제조 방법 |
| TWI819257B (zh) * | 2019-12-20 | 2023-10-21 | 美商應用材料股份有限公司 | 具有可調整碳含量之碳氮化矽間隙填充 |
| US11776846B2 (en) * | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| JP2023527976A (ja) * | 2020-05-27 | 2023-07-03 | ジェレスト， インコーポレイテッド | Ｎ－アルキル置換ペルヒドリドシクロトリシラザン類によるシリコン系薄膜 |
| TWI797640B (zh) | 2020-06-18 | 2023-04-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 基於矽之自組裝單層組成物及使用該組成物之表面製備 |
| US11674222B2 (en) | 2020-09-29 | 2023-06-13 | Applied Materials, Inc. | Method of in situ ceramic coating deposition |
| JP2024505193A (ja) * | 2021-01-26 | 2024-02-05 | インテグリス・インコーポレーテッド | 高スループット堆積方法 |
| TW202248447A (zh) * | 2021-03-08 | 2022-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於形成包含有鋁、鈦、與碳之層的方法及系統 |
| KR20230157424A (ko) * | 2021-03-18 | 2023-11-16 | 버슘머트리얼즈 유에스, 엘엘씨 | 고품질 실리콘 옥사이드 박막의 원자층 증착을 위한 조성물 |
| CN115565861A (zh) * | 2021-07-02 | 2023-01-03 | 长鑫存储技术有限公司 | 一种薄膜沉积方法及半导体器件 |
| TW202315962A (zh) * | 2021-09-08 | 2023-04-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 拓樸選擇性沉積方法 |
| US20250011924A1 (en) * | 2021-11-15 | 2025-01-09 | Versum Materials Us, Llc | Multilayered silicon nitride film |
| EP4437160A1 (en) * | 2021-11-24 | 2024-10-02 | Entegris, Inc. | Organotin precursor compounds |
Family Cites Families (128)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4200666A (en) | 1978-08-02 | 1980-04-29 | Texas Instruments Incorporated | Single component monomer for silicon nitride deposition |
| JPS61234534A (ja) * | 1985-04-11 | 1986-10-18 | Semiconductor Energy Lab Co Ltd | 窒化珪素被膜作成方法 |
| US5008422A (en) * | 1985-04-26 | 1991-04-16 | Sri International | Polysilazanes and related compositions, processes and uses |
| EP0218117A3 (en) * | 1985-10-11 | 1989-11-23 | Allied Corporation | Cyclosilazane polymers as dielectric films in integrated circuit fabrication technology |
| JPH0662775B2 (ja) * | 1987-06-12 | 1994-08-17 | チッソ株式会社 | 新規ポリシラザン及びその製造方法 |
| JP3060185B2 (ja) | 1991-05-01 | 2000-07-10 | 株式会社高純度化学研究所 | 半導体装置のシリコン酸化膜の製造方法 |
| JPH06310493A (ja) | 1993-04-23 | 1994-11-04 | Kawasaki Steel Corp | 半導体装置の製造装置 |
| US5567661A (en) | 1993-08-26 | 1996-10-22 | Fujitsu Limited | Formation of planarized insulating film by plasma-enhanced CVD of organic silicon compound |
| JP3401322B2 (ja) | 1993-08-26 | 2003-04-28 | 富士通株式会社 | 絶縁膜を有する半導体装置の製造方法 |
| US5413813A (en) * | 1993-11-23 | 1995-05-09 | Enichem S.P.A. | CVD of silicon-based ceramic materials on internal surface of a reactor |
| US5424095A (en) * | 1994-03-07 | 1995-06-13 | Eniricerche S.P.A. | Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors |
| JP3396791B2 (ja) * | 1994-08-30 | 2003-04-14 | 富士通株式会社 | 絶縁膜の形成方法 |
| FR2759362B1 (fr) * | 1997-02-10 | 1999-03-12 | Saint Gobain Vitrage | Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention |
| US5968611A (en) * | 1997-11-26 | 1999-10-19 | The Research Foundation Of State University Of New York | Silicon nitrogen-based films and method of making the same |
| US6197658B1 (en) * | 1998-10-30 | 2001-03-06 | Taiwan Semiconductor Manufacturing Company | Sub-atmospheric pressure thermal chemical vapor deposition (SACVD) trench isolation method with attenuated surface sensitivity |
| US6541367B1 (en) | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
| US6630413B2 (en) * | 2000-04-28 | 2003-10-07 | Asm Japan K.K. | CVD syntheses of silicon nitride materials |
| WO2002017374A1 (en) | 2000-08-18 | 2002-02-28 | Tokyo Electron Limited | Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof |
| JP3915881B2 (ja) * | 2001-03-14 | 2007-05-16 | 信越化学工業株式会社 | 分岐状低分子シロキサンの製造方法 |
| JP2003203800A (ja) * | 2001-09-14 | 2003-07-18 | Sekisui Chem Co Ltd | 常圧プラズマ処理方法および装置 |
| US6969769B2 (en) * | 2002-06-14 | 2005-11-29 | Vanson Halosource, Inc. | N-halamine siloxanes for use in biocidal coatings and materials |
| JP4217870B2 (ja) | 2002-07-15 | 2009-02-04 | 日本電気株式会社 | 有機シロキサン共重合体膜、その製造方法、成長装置、ならびに該共重合体膜を用いた半導体装置 |
| WO2004016670A2 (en) * | 2002-08-16 | 2004-02-26 | The University Of Akron | Poly(cyclosiloxane) composiiton and method of synthesis thereof |
| EP1627007B1 (en) * | 2003-05-23 | 2007-10-31 | Dow Corning Corporation | Siloxane resin-based anti-reflective coating composition having high wet etch rate |
| US7125582B2 (en) * | 2003-07-30 | 2006-10-24 | Intel Corporation | Low-temperature silicon nitride deposition |
| US20050109276A1 (en) | 2003-11-25 | 2005-05-26 | Applied Materials, Inc. | Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber |
| JP3666751B2 (ja) | 2003-11-28 | 2005-06-29 | 東京エレクトロン株式会社 | 絶縁膜の形成方法及び絶縁膜形成システム |
| DE102004001288A1 (de) | 2004-01-07 | 2005-08-11 | Clariant International Limited | Hydrophile Beschichtung auf Polysilazanbasis |
| US7470450B2 (en) * | 2004-01-23 | 2008-12-30 | Intel Corporation | Forming a silicon nitride film |
| US7098150B2 (en) | 2004-03-05 | 2006-08-29 | Air Liquide America L.P. | Method for novel deposition of high-k MSiON dielectric films |
| US7582555B1 (en) | 2005-12-29 | 2009-09-01 | Novellus Systems, Inc. | CVD flowable gap fill |
| US7074690B1 (en) | 2004-03-25 | 2006-07-11 | Novellus Systems, Inc. | Selective gap-fill process |
| US7524735B1 (en) | 2004-03-25 | 2009-04-28 | Novellus Systems, Inc | Flowable film dielectric gap fill process |
| US20050239295A1 (en) * | 2004-04-27 | 2005-10-27 | Wang Pei-L | Chemical treatment of material surfaces |
| US7521378B2 (en) | 2004-07-01 | 2009-04-21 | Micron Technology, Inc. | Low temperature process for polysilazane oxidation/densification |
| JP4470023B2 (ja) * | 2004-08-20 | 2010-06-02 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | シリコン窒化物膜の製造方法 |
| US7332445B2 (en) * | 2004-09-28 | 2008-02-19 | Air Products And Chemicals, Inc. | Porous low dielectric constant compositions and methods for making and using same |
| US7947330B2 (en) | 2004-10-19 | 2011-05-24 | Toray Industries, Inc. | Production method of film, and film |
| ATE486098T1 (de) * | 2004-12-17 | 2010-11-15 | Dow Corning | Siloxanharzbeschichtung |
| JP3788624B1 (ja) * | 2005-01-18 | 2006-06-21 | 旭電化工業株式会社 | シロキサン化合物及びフェノール化合物を含有してなる組成物 |
| JP2006261434A (ja) | 2005-03-17 | 2006-09-28 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | シリコン酸化膜の形成方法 |
| US7875556B2 (en) * | 2005-05-16 | 2011-01-25 | Air Products And Chemicals, Inc. | Precursors for CVD silicon carbo-nitride and silicon nitride films |
| JP4766934B2 (ja) * | 2005-06-24 | 2011-09-07 | パナソニック株式会社 | 層間絶縁膜の形成方法 |
| WO2007000186A1 (en) * | 2005-06-29 | 2007-01-04 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Deposition method of ternary films |
| US20070031598A1 (en) | 2005-07-08 | 2007-02-08 | Yoshikazu Okuyama | Method for depositing silicon-containing films |
| US20070010072A1 (en) * | 2005-07-09 | 2007-01-11 | Aviza Technology, Inc. | Uniform batch film deposition process and films so produced |
| JP4305427B2 (ja) * | 2005-08-02 | 2009-07-29 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
| US7547796B2 (en) * | 2005-09-29 | 2009-06-16 | Praxair Technology, Inc. | Organometallic compounds, processes for the preparation thereof and methods of use thereof |
| US8530361B2 (en) * | 2006-05-23 | 2013-09-10 | Air Products And Chemicals, Inc. | Process for producing silicon and oxide films from organoaminosilane precursors |
| US7875312B2 (en) * | 2006-05-23 | 2011-01-25 | Air Products And Chemicals, Inc. | Process for producing silicon oxide films for organoaminosilane precursors |
| US7498273B2 (en) * | 2006-05-30 | 2009-03-03 | Applied Materials, Inc. | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes |
| US7781352B2 (en) | 2007-06-06 | 2010-08-24 | Asm Japan K.K. | Method for forming inorganic silazane-based dielectric film |
| US9337054B2 (en) | 2007-06-28 | 2016-05-10 | Entegris, Inc. | Precursors for silicon dioxide gap fill |
| JP2009032962A (ja) | 2007-07-27 | 2009-02-12 | Panasonic Corp | 半導体装置及びその製造方法 |
| JP4935687B2 (ja) * | 2008-01-19 | 2012-05-23 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US7999355B2 (en) * | 2008-07-11 | 2011-08-16 | Air Products And Chemicals, Inc. | Aminosilanes for shallow trench isolation films |
| US20100081293A1 (en) | 2008-10-01 | 2010-04-01 | Applied Materials, Inc. | Methods for forming silicon nitride based film or silicon carbon based film |
| JP5559988B2 (ja) * | 2009-06-03 | 2014-07-23 | 東京エレクトロン株式会社 | シリコン酸化膜用成膜原料およびそれを用いたシリコン酸化膜の成膜方法 |
| US7825040B1 (en) | 2009-06-22 | 2010-11-02 | Asm Japan K.K. | Method for depositing flowable material using alkoxysilane or aminosilane precursor |
| JP5011355B2 (ja) * | 2009-07-30 | 2012-08-29 | 東京エレクトロン株式会社 | 成膜方法 |
| KR101752901B1 (ko) * | 2009-08-25 | 2017-06-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기판의 재생 방법, 재생 반도체 기판의 제작 방법, 및 ｓｏｉ 기판의 제작 방법 |
| TW201131651A (en) * | 2009-10-05 | 2011-09-16 | Univ Tohoku | Low dielectric constant insulating film |
| US8415259B2 (en) * | 2009-10-14 | 2013-04-09 | Asm Japan K.K. | Method of depositing dielectric film by modified PEALD method |
| US20110136347A1 (en) * | 2009-10-21 | 2011-06-09 | Applied Materials, Inc. | Point-of-use silylamine generation |
| WO2011058947A1 (ja) * | 2009-11-11 | 2011-05-19 | 日本電気株式会社 | 抵抗変化素子、半導体装置、および抵抗変化素子の形成方法 |
| US20110151677A1 (en) * | 2009-12-21 | 2011-06-23 | Applied Materials, Inc. | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
| SG182336A1 (en) | 2010-01-06 | 2012-08-30 | Applied Materials Inc | Flowable dielectric using oxide liner |
| US8461367B2 (en) * | 2010-01-15 | 2013-06-11 | Shin-Etsu Chemical Co., Ltd. | Preparation process of trisilylamine |
| US8703625B2 (en) * | 2010-02-04 | 2014-04-22 | Air Products And Chemicals, Inc. | Methods to prepare silicon-containing films |
| EP2362411A1 (en) * | 2010-02-26 | 2011-08-31 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Apparatus and method for reactive ion etching |
| US20120213940A1 (en) | 2010-10-04 | 2012-08-23 | Applied Materials, Inc. | Atomic layer deposition of silicon nitride using dual-source precursor and interleaved plasma |
| US20120083133A1 (en) | 2010-10-05 | 2012-04-05 | Applied Materials, Inc. | Amine curing silicon-nitride-hydride films |
| US8455768B2 (en) * | 2010-11-15 | 2013-06-04 | International Business Machines Corporation | Back-end-of-line planar resistor |
| US8685867B1 (en) | 2010-12-09 | 2014-04-01 | Novellus Systems, Inc. | Premetal dielectric integration process |
| US8460753B2 (en) | 2010-12-09 | 2013-06-11 | Air Products And Chemicals, Inc. | Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes |
| US8530983B2 (en) * | 2011-04-08 | 2013-09-10 | Georgia Tech Research Corporation | Piezo-phototronic effect devices |
| US8592005B2 (en) * | 2011-04-26 | 2013-11-26 | Asm Japan K.K. | Atomic layer deposition for controlling vertical film growth |
| DE102011075974A1 (de) * | 2011-05-17 | 2012-11-22 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Trisilylamin in der Gasphase |
| WO2013077321A1 (ja) * | 2011-11-21 | 2013-05-30 | 株式会社日立国際電気 | 半導体装置の製造装置、半導体装置の製造方法及び記録媒体 |
| US20130209343A1 (en) * | 2012-02-10 | 2013-08-15 | American Air Liquide, Inc. | Liquid phase synthesis of trisilylamine |
| US8846536B2 (en) | 2012-03-05 | 2014-09-30 | Novellus Systems, Inc. | Flowable oxide film with tunable wet etch rate |
| US8871656B2 (en) * | 2012-03-05 | 2014-10-28 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
| WO2013134661A1 (en) * | 2012-03-09 | 2013-09-12 | Air Products And Chemicals, Inc. | Barrier materials for display devices |
| JP5949027B2 (ja) * | 2012-03-23 | 2016-07-06 | 富士ゼロックス株式会社 | 静電荷像現像用トナー、静電荷像現像剤、トナーカートリッジ、現像剤カートリッジ、プロセスカートリッジ、画像形成装置、及び、画像形成方法 |
| US20130260575A1 (en) | 2012-03-28 | 2013-10-03 | Air Products And Chemicals, Inc. | Silicon precursors and compositions comprising same for depositing low dielectric constant films |
| US9978585B2 (en) * | 2012-06-01 | 2018-05-22 | Versum Materials Us, Llc | Organoaminodisilane precursors and methods for depositing films comprising same |
| US9337018B2 (en) | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
| US10211310B2 (en) * | 2012-06-12 | 2019-02-19 | Novellus Systems, Inc. | Remote plasma based deposition of SiOC class of films |
| WO2014015237A1 (en) * | 2012-07-20 | 2014-01-23 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Organosilane precursors for ald/cvd silicon-containing film applications |
| US9243324B2 (en) | 2012-07-30 | 2016-01-26 | Air Products And Chemicals, Inc. | Methods of forming non-oxygen containing silicon-based films |
| DE102012214290A1 (de) * | 2012-08-10 | 2014-02-13 | Evonik Industries Ag | Verfahren zur gekoppelten Herstellung von Polysilazanen und Trisilylamin |
| KR101361454B1 (ko) * | 2012-08-23 | 2014-02-21 | 이근수 | 반도체 소자의 실리콘 산화막 형성 방법 |
| US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
| US9330899B2 (en) * | 2012-11-01 | 2016-05-03 | Asm Ip Holding B.V. | Method of depositing thin film |
| US9878234B2 (en) * | 2012-12-10 | 2018-01-30 | Arlen Moller | Incorporating objective assessments of fantasy-team-owners' physical activity into fantasy sport platforms |
| US10279959B2 (en) * | 2012-12-11 | 2019-05-07 | Versum Materials Us, Llc | Alkoxysilylamine compounds and applications thereof |
| KR101599952B1 (ko) | 2012-12-31 | 2016-03-04 | 제일모직 주식회사 | 중합체 제조 방법 및 실리카계 절연막 형성용 조성물 |
| KR101583232B1 (ko) | 2012-12-31 | 2016-01-07 | 제일모직 주식회사 | 중합체 제조 방법 및 실리카계 절연막 형성용 조성물 |
| US9343545B2 (en) | 2013-03-06 | 2016-05-17 | International Business Machines Corporation | Electrical coupling of memory cell access devices to a word line |
| DE102013209802A1 (de) * | 2013-05-27 | 2014-11-27 | Evonik Industries Ag | Verfahren zur gekoppelten Herstellung von Trisilylamin und Polysilazanen mit einer Molmasse bis 500 g/mol |
| KR101600337B1 (ko) | 2013-06-07 | 2016-03-08 | (주)디엔에프 | 신규한 아미노실릴아민 화합물, 이의 제조방법 및 이를 이용한 실리콘 함유 박막 |
| CN105849221B (zh) * | 2013-09-27 | 2019-06-18 | 乔治洛德方法研究和开发液化空气有限公司 | 胺取代的三甲硅烷基胺和三-二甲硅烷基胺化合物 |
| US9905415B2 (en) * | 2013-10-03 | 2018-02-27 | Versum Materials Us, Llc | Methods for depositing silicon nitride films |
| WO2015112324A1 (en) * | 2014-01-24 | 2015-07-30 | Applied Materials, Inc. | Deposition of silicon and oxygen-containing films without an oxidizer |
| JP6345006B2 (ja) * | 2014-07-08 | 2018-06-20 | キヤノン株式会社 | インクジェット記録ヘッド用基板の製造方法 |
| US20160079034A1 (en) * | 2014-09-12 | 2016-03-17 | Applied Materials Inc. | Flowable film properties tuning using implantation |
| US20160156066A1 (en) * | 2014-10-20 | 2016-06-02 | Massachusetts Institute Of Technology | Polymer electrolytes for electrochemical cells |
| KR102188751B1 (ko) * | 2014-10-24 | 2020-12-08 | 버슘머트리얼즈 유에스, 엘엘씨 | 실리콘-함유 막을 증착시키기 위한 조성물 및 이를 사용하는 방법 |
| US10354860B2 (en) * | 2015-01-29 | 2019-07-16 | Versum Materials Us, Llc | Method and precursors for manufacturing 3D devices |
| US11001599B2 (en) | 2015-03-23 | 2021-05-11 | Gelest Technologies, Inc. | N-alkyl substituted cyclic and oligomeric perhydridosilazanes, methods of preparation thereof, and silicon nitride films formed therefrom |
| US9777025B2 (en) | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
| US11124876B2 (en) * | 2015-03-30 | 2021-09-21 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
| KR20170019668A (ko) | 2015-08-12 | 2017-02-22 | (주)디엔에프 | 플라즈마 원자층 증착법을 이용한 실리콘 질화 박막의 제조방법 |
| US20170114465A1 (en) * | 2015-10-22 | 2017-04-27 | Applied Materials, Inc. | Methods Of Depositing Flowable Films Comprising SiO and SiN |
| KR102613423B1 (ko) * | 2015-12-21 | 2023-12-12 | 버슘머트리얼즈 유에스, 엘엘씨 | 규소-함유 막의 증착을 위한 조성물 및 이를 사용하는 방법 |
| US12454753B2 (en) * | 2018-06-15 | 2025-10-28 | Versum Materials Us, Llc | Compositions and methods using same for deposition of silicon-containing film |
| CN109072426B (zh) | 2016-02-26 | 2021-12-03 | 弗萨姆材料美国有限责任公司 | 组合物和使用其沉积含硅膜的方法 |
| US10384944B2 (en) * | 2016-05-19 | 2019-08-20 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Preparation of Si—H containing iodosilanes via halide exchange reaction |
| US20180033614A1 (en) * | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
| US11017998B2 (en) * | 2016-08-30 | 2021-05-25 | Versum Materials Us, Llc | Precursors and flowable CVD methods for making low-K films to fill surface features |
| US10468244B2 (en) * | 2016-08-30 | 2019-11-05 | Versum Materials Us, Llc | Precursors and flowable CVD methods for making low-K films to fill surface features |
| US11735413B2 (en) * | 2016-11-01 | 2023-08-22 | Versum Materials Us, Llc | Precursors and flowable CVD methods for making low-k films to fill surface features |
| US10647578B2 (en) * | 2016-12-11 | 2020-05-12 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications |
| EP3682041B1 (en) * | 2017-09-14 | 2022-04-20 | Versum Materials US, LLC | Methods for depositing silicon-containing films |
| US11049714B2 (en) * | 2017-09-19 | 2021-06-29 | Versum Materials Us, Llc | Silyl substituted organoamines as precursors for high growth rate silicon-containing films |
| US11078569B2 (en) * | 2017-09-19 | 2021-08-03 | Versum Materials Us, Llc | Trisilylamine derivatives as precursors for high growth rate silicon-containing films |
| US20190318925A1 (en) * | 2018-04-11 | 2019-10-17 | Versum Materials Us, Llc | Monoorganoaminodisilane Precursors and Methods for Depositing Films Comprising Same |
| JP7598360B2 (ja) * | 2019-07-25 | 2024-12-11 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | ケイ素含有膜の堆積のためのシラシクロアルカンを含む組成物及びその組成物を使用する方法 |
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