RU2016135995A - Атомно-слоевое осаждение германия или оксида германия - Google Patents

Атомно-слоевое осаждение германия или оксида германия Download PDF

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RU2016135995A
RU2016135995A RU2016135995A RU2016135995A RU2016135995A RU 2016135995 A RU2016135995 A RU 2016135995A RU 2016135995 A RU2016135995 A RU 2016135995A RU 2016135995 A RU2016135995 A RU 2016135995A RU 2016135995 A RU2016135995 A RU 2016135995A
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germanium
substrate
deposition
precursor
vol
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RU2016135995A
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Вэй-Минь ЛИ
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Пикосан Ой
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Claims (19)

1. Способ осаждения германия на подложку, включающий последовательную обработку в ходе по меньшей мере одного цикла осаждения подложки, расположенной внутри камеры, Ge-содержащим прекурсором и восстанавливающим или окисляющим прекурсором.
2. Способ по п. 1, отличающийся тем, что по меньшей мере один цикл осаждения включает:
a. импульс Ge-содержащего прекурсора;
b. продувку инертным газом;
c. восстанавливающий или окисляющий импульс;
d. продувку инертным газом.
3. Способ по п. 1, отличающийся тем, что на стадии «с» восстанавливающий прекурсор выбран из группы, состоящей из Н2 и водородной плазмы.
4. Способ по п. 1, отличающийся тем, что Н2 на стадии «с» цикла осаждения используют в качестве восстанавливающего импульса в количестве, лежащем в диапазоне от примерно 4 об. % до примерно 100 об. %, предпочтительно, от примерно 5 об. % до 50 об. %, наиболее предпочтительно,равном примерно 15 об. %, в смеси с инертным газом.
5. Способ по п. 1, отличающийся тем, что на стадии «с» окисляющий прекурсор выбран из O2, O3, H2O2, кислородной плазмы, воды и водной плазмы.
6. Способ по п. 1, отличающийся тем, что цикл осаждения проводят при температуре, лежащей в диапазоне от примерно 50°С до примерно 800°С, предпочтительно,от примерно 100°С до примерно 500°С, более предпочтительно, от примерно 300°С до примерно 400°С, и наиболее предпочтительно, равной примерно 350°С.
7. Способ по п. 1, отличающийся тем, что инертный газ является азотом или аргоном, и инертный газ является аргоном, если используют плазменный прекурсор.
8. Способ по п. 1, отличающийся тем, что Ge-содержащий прекурсор обладает летучестью, равной по меньшей мере 1 гПа, в диапазоне температур от комнатной температуры до 200°С.
9. Способ по п. 1, отличающийся тем, что Ge-содержащий прекурсор выбран из группы, состоящей из алкилгермания, алкиламиногермания, тетракис(диметиламино)германия, дикетоната германия, галидов германия и алкоксида германия.
10. Способ по п. 1, отличающийся тем, что подложка является кремниевой подложкой, германиевой подложкой, подложкой из полупроводника III-V групп, оксида кремния или оксида германия, или подложкой на основе неорганических и органических/полимерных материалов.
11. Способ по п. 1, отличающийся тем, что способ основан на самонасыщающихся поверхностных реакциях.
12. Способ по п. 1, отличающийся тем, что цикл осаждения повторяют до тех пор, пока осажденный слой не будет иметь толщину, лежащую в диапазоне от 10 нм до 100 нм.
13. Применение тетракис(диметиламино)германия в атомно-слоевом осаждении.
14. Применение по п. 13, отличающееся тем, что атомно-слоевое осаждение используют для осаждения на кремниевую подложку.
15. Изделие с осажденным на него Ge, изготовленное посредством нанесения покрытия на изделие без осажденного покрытия, используемое в качестве подложки, способом по любому из пп. 1-12.
RU2016135995A 2014-03-04 2014-03-04 Атомно-слоевое осаждение германия или оксида германия RU2016135995A (ru)

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