JP2017535077A - ケイ素含有膜の堆積のための組成物及びそれを使用した方法 - Google Patents

ケイ素含有膜の堆積のための組成物及びそれを使用した方法 Download PDF

Info

Publication number
JP2017535077A
JP2017535077A JP2017522032A JP2017522032A JP2017535077A JP 2017535077 A JP2017535077 A JP 2017535077A JP 2017522032 A JP2017522032 A JP 2017522032A JP 2017522032 A JP2017522032 A JP 2017522032A JP 2017535077 A JP2017535077 A JP 2017535077A
Authority
JP
Japan
Prior art keywords
branched
linear
group
compound
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2017522032A
Other languages
English (en)
Japanese (ja)
Inventor
リー ジエンホゥオン
リー ジエンホゥオン
フランシス レーマン ジョン
フランシス レーマン ジョン
レイ シンジエン
レイ シンジエン
レイモンド　ニコラス　バーティス
ニコラス バーティス レイモンド
ゴードン リッジウェイ ロバート
ゴードン リッジウェイ ロバート
ロバート エントリー ウィリアム
ロバート エントリー ウィリアム
Original Assignee
バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー, バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー filed Critical バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
Publication of JP2017535077A publication Critical patent/JP2017535077A/ja
Priority to JP2019164049A priority Critical patent/JP6949912B2/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Silicon Polymers (AREA)
JP2017522032A 2014-10-24 2015-10-23 ケイ素含有膜の堆積のための組成物及びそれを使用した方法 Withdrawn JP2017535077A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019164049A JP6949912B2 (ja) 2014-10-24 2019-09-09 ケイ素含有膜の堆積のための組成物及びそれを使用した方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462068248P 2014-10-24 2014-10-24
US62/068,248 2014-10-24
PCT/US2015/057040 WO2016065219A1 (en) 2014-10-24 2015-10-23 Compositions and methods using same for deposition of silicon-containing film

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019164049A Division JP6949912B2 (ja) 2014-10-24 2019-09-09 ケイ素含有膜の堆積のための組成物及びそれを使用した方法

Publications (1)

Publication Number Publication Date
JP2017535077A true JP2017535077A (ja) 2017-11-24

Family

ID=54477308

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2017522023A Active JP6871161B2 (ja) 2014-10-24 2015-10-23 ケイ素含有膜の堆積のための組成物及びそれを使用した方法
JP2017522032A Withdrawn JP2017535077A (ja) 2014-10-24 2015-10-23 ケイ素含有膜の堆積のための組成物及びそれを使用した方法
JP2019164049A Active JP6949912B2 (ja) 2014-10-24 2019-09-09 ケイ素含有膜の堆積のための組成物及びそれを使用した方法
JP2021152399A Active JP7152576B2 (ja) 2014-10-24 2021-09-17 ケイ素含有膜の堆積のための組成物及びそれを使用した方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2017522023A Active JP6871161B2 (ja) 2014-10-24 2015-10-23 ケイ素含有膜の堆積のための組成物及びそれを使用した方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2019164049A Active JP6949912B2 (ja) 2014-10-24 2019-09-09 ケイ素含有膜の堆積のための組成物及びそれを使用した方法
JP2021152399A Active JP7152576B2 (ja) 2014-10-24 2021-09-17 ケイ素含有膜の堆積のための組成物及びそれを使用した方法

Country Status (8)

Country Link
US (5) US10106890B2 (cg-RX-API-DMAC7.html)
EP (3) EP3209813B1 (cg-RX-API-DMAC7.html)
JP (4) JP6871161B2 (cg-RX-API-DMAC7.html)
KR (3) KR102079501B1 (cg-RX-API-DMAC7.html)
CN (4) CN107257867B (cg-RX-API-DMAC7.html)
SG (3) SG10202000545RA (cg-RX-API-DMAC7.html)
TW (3) TWI575102B (cg-RX-API-DMAC7.html)
WO (2) WO2016065221A1 (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018533215A (ja) * 2015-10-22 2018-11-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ＳｉＯおよびＳｉＮを含む流動性膜を堆積させる方法
JP2022516238A (ja) * 2018-12-21 2022-02-25 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ５５０℃以上の温度でＡＬＤを使用してＳｉ含有膜を堆積させるための前駆体及びプロセス
CN114959653A (zh) * 2018-08-29 2022-08-30 弗萨姆材料美国有限责任公司 用于制备含硅和氮的膜的方法
JP2023507326A (ja) * 2019-12-20 2023-02-22 アプライド マテリアルズ インコーポレイテッド 炭素含有量が調整可能な炭窒化ケイ素間隙充填

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3049499B1 (en) 2013-09-27 2020-07-22 L'air Liquide, Société Anonyme Pour L'Étude Et L'exploitation Des Procédés Georges Claude Amine substituted trisilylamine and tridisilylamine compounds
US11549181B2 (en) * 2013-11-22 2023-01-10 Applied Materials, Inc. Methods for atomic layer deposition of SiCO(N) using halogenated silylamides
WO2016065221A1 (en) 2014-10-24 2016-04-28 Air Products And Chemicals, Inc. Compositions and methods using same for deposition of silicon-containing films
US10354860B2 (en) * 2015-01-29 2019-07-16 Versum Materials Us, Llc Method and precursors for manufacturing 3D devices
TWI706957B (zh) * 2015-03-30 2020-10-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 碳矽烷與氨、胺類及脒類之觸媒去氫耦合
US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9777025B2 (en) * 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
EP3307745B1 (en) * 2015-06-12 2020-04-01 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition processes for forming silicon- and nitrogen-containing thin films
EP3307744B1 (en) * 2015-06-12 2020-09-02 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition processes for forming silicon- and oxygen-containing thin films
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US12454753B2 (en) * 2018-06-15 2025-10-28 Versum Materials Us, Llc Compositions and methods using same for deposition of silicon-containing film
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
WO2017223323A1 (en) * 2016-06-25 2017-12-28 Applied Materials, Inc. Flowable amorphous silicon films for gapfill applications
US9929006B2 (en) 2016-07-20 2018-03-27 Micron Technology, Inc. Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures
US20180033614A1 (en) * 2016-07-27 2018-02-01 Versum Materials Us, Llc Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
US11017998B2 (en) 2016-08-30 2021-05-25 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
US10468244B2 (en) 2016-08-30 2019-11-05 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
US10811251B2 (en) * 2016-09-30 2020-10-20 Intel Corporation Dielectric gap-fill material deposition
US11735413B2 (en) * 2016-11-01 2023-08-22 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-k films to fill surface features
US10192734B2 (en) 2016-12-11 2019-01-29 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude Short inorganic trisilylamine-based polysilazanes for thin film deposition
US10647578B2 (en) 2016-12-11 2020-05-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications
US10822458B2 (en) * 2017-02-08 2020-11-03 Versum Materials Us, Llc Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films
US11591692B2 (en) * 2017-02-08 2023-02-28 Versum Materials Us, Llc Organoamino-polysiloxanes for deposition of silicon-containing films
US10176984B2 (en) 2017-02-14 2019-01-08 Lam Research Corporation Selective deposition of silicon oxide
US10242866B2 (en) 2017-03-08 2019-03-26 Lam Research Corporation Selective deposition of silicon nitride on silicon oxide using catalytic control
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US11011384B2 (en) 2017-04-07 2021-05-18 Applied Materials, Inc. Gapfill using reactive anneal
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
CN114875388A (zh) * 2017-05-05 2022-08-09 Asm Ip 控股有限公司 用于受控形成含氧薄膜的等离子体增强沉积方法
US12057310B2 (en) 2018-05-22 2024-08-06 Versum Materials Us, Llc Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
US11177127B2 (en) * 2017-05-24 2021-11-16 Versum Materials Us, Llc Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
US10847360B2 (en) * 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
WO2018222771A1 (en) 2017-06-02 2018-12-06 Applied Materials, Inc. Dry stripping of boron carbide hardmask
TWI722292B (zh) * 2017-07-05 2021-03-21 美商應用材料股份有限公司 氮含量高的氮化矽膜
US10269571B2 (en) 2017-07-12 2019-04-23 Applied Materials, Inc. Methods for fabricating nanowire for semiconductor applications
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
WO2019036157A1 (en) 2017-08-18 2019-02-21 Applied Materials, Inc. HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
TWI633201B (zh) * 2017-10-24 2018-08-21 國立交通大學 非晶碳薄膜、其製造方法與包含其之光學系統
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
KR102779084B1 (ko) 2017-11-11 2025-03-07 마이크로머티어리얼즈 엘엘씨 고압 프로세싱 챔버를 위한 가스 전달 시스템
CN111373519B (zh) 2017-11-16 2021-11-23 应用材料公司 高压蒸气退火处理设备
WO2019099255A2 (en) 2017-11-17 2019-05-23 Applied Materials, Inc. Condenser system for high pressure processing system
US10460930B2 (en) * 2017-11-22 2019-10-29 Lam Research Corporation Selective growth of SiO2 on dielectric surfaces in the presence of copper
SG11202006867QA (en) 2018-01-24 2020-08-28 Applied Materials Inc Seam healing using high pressure anneal
TWI793262B (zh) * 2018-02-21 2023-02-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 全氫聚矽氮烷組成物和用於使用其形成氮化物膜之方法
TWI799516B (zh) 2018-02-21 2023-04-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 全氫聚矽氮烷組成物和用於使用其形成氧化物膜之方法
KR102539390B1 (ko) * 2018-02-22 2023-06-05 어플라이드 머티어리얼스, 인코포레이티드 더 양호한 막 품질을 가능하게 하기 위해 마스크 기판을 처리하기 위한 방법
WO2019169335A1 (en) 2018-03-02 2019-09-06 Lam Research Corporation Selective deposition using hydrolysis
WO2019173006A1 (en) 2018-03-09 2019-09-12 Applied Materials, Inc. High pressure annealing process for metal containing materials
CN112005342B (zh) 2018-03-28 2025-09-19 应用材料公司 非晶硅的远程电容耦合等离子体沉积
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
JP7113670B2 (ja) * 2018-06-08 2022-08-05 東京エレクトロン株式会社 Ａｌｄ成膜方法およびａｌｄ成膜装置
EP3802913A4 (en) * 2018-06-11 2022-02-16 Versum Materials US, LLC Compositions and methods using same for deposition of silicon-containing film
US12312684B2 (en) * 2018-06-15 2025-05-27 Versum Materials Us, Llc Siloxane compositions and methods for using the compositions to deposit silicon containing films
US20200003937A1 (en) * 2018-06-29 2020-01-02 Applied Materials, Inc. Using flowable cvd to gap fill micro/nano structures for optical components
JP6909762B2 (ja) * 2018-07-23 2021-07-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10483099B1 (en) * 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
CN110952074B (zh) * 2018-08-10 2023-06-13 弗萨姆材料美国有限责任公司 硅化合物和使用硅化合物沉积膜的方法
KR102373339B1 (ko) 2018-08-10 2022-03-10 버슘머트리얼즈 유에스, 엘엘씨 규소 화합물 및 이를 사용하여 막을 증착시키는 방법
JP7179172B6 (ja) 2018-10-30 2022-12-16 アプライド マテリアルズ インコーポレイテッド 半導体用途の構造体をエッチングするための方法
JP2022507390A (ja) 2018-11-16 2022-01-18 アプライド マテリアルズ インコーポレイテッド 強化拡散プロセスを使用する膜の堆積
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
WO2020163359A1 (en) * 2019-02-05 2020-08-13 Versum Materials Us, Llc Deposition of carbon doped silicon oxide
KR102783961B1 (ko) * 2019-03-20 2025-03-18 어플라이드 머티어리얼스, 인코포레이티드 저온의 열 산화물 품질에서 두꺼운 산화물 막들을 성장시키는 방법
WO2020257550A1 (en) * 2019-06-21 2020-12-24 Versum Materials Us, Llc Compositions and methods using same for deposition of silicon-containing film
KR102829813B1 (ko) * 2019-10-08 2025-07-03 에스케이트리켐 주식회사 금속 함유 박막 형성을 위한 신규 전구체 및 이를 이용한 금속 함유 박막 형성 방법 및 상기 금속 함유 박막을 포함하는 반도체 소자.
US11482414B2 (en) 2019-12-18 2022-10-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Ultra-low temperature ALD to form high-quality Si-containing film
KR102818620B1 (ko) * 2019-12-20 2025-06-10 삼성전자주식회사 물질막 형성 방법과, 집적회로 소자 및 그 제조 방법
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
JP2023527976A (ja) * 2020-05-27 2023-07-03 ジェレスト， インコーポレイテッド Ｎ－アルキル置換ペルヒドリドシクロトリシラザン類によるシリコン系薄膜
TWI797640B (zh) 2020-06-18 2023-04-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 基於矽之自組裝單層組成物及使用該組成物之表面製備
US11674222B2 (en) * 2020-09-29 2023-06-13 Applied Materials, Inc. Method of in situ ceramic coating deposition
EP4284959A4 (en) * 2021-01-26 2025-04-30 Entegris, Inc. High throughput deposition process
TW202248447A (zh) * 2021-03-08 2022-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成包含有鋁、鈦、與碳之層的方法及系統
KR20230157424A (ko) * 2021-03-18 2023-11-16 버슘머트리얼즈 유에스, 엘엘씨 고품질 실리콘 옥사이드 박막의 원자층 증착을 위한 조성물
CN115565861A (zh) * 2021-07-02 2023-01-03 长鑫存储技术有限公司 一种薄膜沉积方法及半导体器件
TW202315962A (zh) * 2021-09-08 2023-04-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 拓樸選擇性沉積方法
EP4433625A4 (en) * 2021-11-15 2025-10-01 Versum Mat Us Llc MULTILAYER SILICON NITRIDE FILM
US12221691B2 (en) * 2021-11-24 2025-02-11 Entegris, Inc. Organotin precursor compounds

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04329639A (ja) * 1991-05-01 1992-11-18 Kojundo Chem Lab Co Ltd 半導体装置のシリコン酸化膜の製造方法
JPH06310493A (ja) * 1993-04-23 1994-11-04 Kawasaki Steel Corp 半導体装置の製造装置
JPH07115092A (ja) * 1993-08-26 1995-05-02 Fujitsu Ltd 絶縁膜を有する半導体装置の製造方法
US5567661A (en) * 1993-08-26 1996-10-22 Fujitsu Limited Formation of planarized insulating film by plasma-enhanced CVD of organic silicon compound
JP2003203800A (ja) * 2001-09-14 2003-07-18 Sekisui Chem Co Ltd 常圧プラズマ処理方法および装置
US20070281495A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp ii - remote plasma enhanced deposition processes
US20090232985A1 (en) * 2005-03-17 2009-09-17 Christian Dussarrat Method of forming silicon oxide containing films
US20100081293A1 (en) * 2008-10-01 2010-04-01 Applied Materials, Inc. Methods for forming silicon nitride based film or silicon carbon based film
US20100164057A1 (en) * 2007-06-28 2010-07-01 Advanced Technology Materials, Inc. Precursors for silicon dioxide gap fill
US20120083133A1 (en) * 2010-10-05 2012-04-05 Applied Materials, Inc. Amine curing silicon-nitride-hydride films
US20120148745A1 (en) * 2010-12-09 2012-06-14 Air Products And Chemicals, Inc. Aminovinylsilane for CVD and ALD SiO2 Films
US20130323435A1 (en) * 2012-06-01 2013-12-05 Air Products And Chemicals, Inc. Organoaminodisilane precursors and methods for depositing films comprising same
JP2014132653A (ja) * 2012-12-11 2014-07-17 Air Products And Chemicals Inc アルコキシシリルアミン化合物及びその応用

Family Cites Families (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4200666A (en) 1978-08-02 1980-04-29 Texas Instruments Incorporated Single component monomer for silicon nitride deposition
JPS61234534A (ja) * 1985-04-11 1986-10-18 Semiconductor Energy Lab Co Ltd 窒化珪素被膜作成方法
US5008422A (en) 1985-04-26 1991-04-16 Sri International Polysilazanes and related compositions, processes and uses
EP0218117A3 (en) 1985-10-11 1989-11-23 Allied Corporation Cyclosilazane polymers as dielectric films in integrated circuit fabrication technology
JPH0662775B2 (ja) 1987-06-12 1994-08-17 チッソ株式会社 新規ポリシラザン及びその製造方法
US5413813A (en) * 1993-11-23 1995-05-09 Enichem S.P.A. CVD of silicon-based ceramic materials on internal surface of a reactor
US5424095A (en) * 1994-03-07 1995-06-13 Eniricerche S.P.A. Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors
JP3396791B2 (ja) * 1994-08-30 2003-04-14 富士通株式会社 絶縁膜の形成方法
FR2759362B1 (fr) 1997-02-10 1999-03-12 Saint Gobain Vitrage Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention
US5968611A (en) * 1997-11-26 1999-10-19 The Research Foundation Of State University Of New York Silicon nitrogen-based films and method of making the same
US6197658B1 (en) * 1998-10-30 2001-03-06 Taiwan Semiconductor Manufacturing Company Sub-atmospheric pressure thermal chemical vapor deposition (SACVD) trench isolation method with attenuated surface sensitivity
US6541367B1 (en) 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
US6630413B2 (en) * 2000-04-28 2003-10-07 Asm Japan K.K. CVD syntheses of silicon nitride materials
AU2001278749A1 (en) 2000-08-18 2002-03-04 Tokyo Electron Limited Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof
JP3915881B2 (ja) * 2001-03-14 2007-05-16 信越化学工業株式会社 分岐状低分子シロキサンの製造方法
US6969769B2 (en) * 2002-06-14 2005-11-29 Vanson Halosource, Inc. N-halamine siloxanes for use in biocidal coatings and materials
JP4217870B2 (ja) 2002-07-15 2009-02-04 日本電気株式会社 有機シロキサン共重合体膜、その製造方法、成長装置、ならびに該共重合体膜を用いた半導体装置
AU2003256433A1 (en) * 2002-08-16 2004-03-03 Joseph P. Kennedy Poly(cyclosiloxane) composiiton and method of synthesis thereof
ATE377036T1 (de) * 2003-05-23 2007-11-15 Dow Corning Siloxan-harz basierte anti- reflektionsbeschichtung mit hoher nassätzgeschwindigkeit
US7125582B2 (en) * 2003-07-30 2006-10-24 Intel Corporation Low-temperature silicon nitride deposition
US20050109276A1 (en) 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
JP3666751B2 (ja) 2003-11-28 2005-06-29 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜形成システム
DE102004001288A1 (de) 2004-01-07 2005-08-11 Clariant International Limited Hydrophile Beschichtung auf Polysilazanbasis
US7470450B2 (en) * 2004-01-23 2008-12-30 Intel Corporation Forming a silicon nitride film
US7098150B2 (en) 2004-03-05 2006-08-29 Air Liquide America L.P. Method for novel deposition of high-k MSiON dielectric films
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US7074690B1 (en) 2004-03-25 2006-07-11 Novellus Systems, Inc. Selective gap-fill process
US20050239295A1 (en) * 2004-04-27 2005-10-27 Wang Pei-L Chemical treatment of material surfaces
US7521378B2 (en) 2004-07-01 2009-04-21 Micron Technology, Inc. Low temperature process for polysilazane oxidation/densification
JP4470023B2 (ja) * 2004-08-20 2010-06-02 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード シリコン窒化物膜の製造方法
US7332445B2 (en) * 2004-09-28 2008-02-19 Air Products And Chemicals, Inc. Porous low dielectric constant compositions and methods for making and using same
CN100595317C (zh) * 2004-10-19 2010-03-24 东丽株式会社 薄膜的制造方法和薄膜
ATE486098T1 (de) * 2004-12-17 2010-11-15 Dow Corning Siloxanharzbeschichtung
JP3788624B1 (ja) * 2005-01-18 2006-06-21 旭電化工業株式会社 シロキサン化合物及びフェノール化合物を含有してなる組成物
US7875556B2 (en) * 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
JP4766934B2 (ja) * 2005-06-24 2011-09-07 パナソニック株式会社 層間絶縁膜の形成方法
JP4870759B2 (ja) * 2005-06-29 2012-02-08 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ３成分膜の新規な堆積方法
KR20080028963A (ko) * 2005-07-08 2008-04-02 에비자 테크놀로지, 인크. 실리콘 함유 필름의 증착 방법
US20070010072A1 (en) * 2005-07-09 2007-01-11 Aviza Technology, Inc. Uniform batch film deposition process and films so produced
JP4305427B2 (ja) * 2005-08-02 2009-07-29 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
US7547796B2 (en) * 2005-09-29 2009-06-16 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
US7875312B2 (en) * 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
US8530361B2 (en) * 2006-05-23 2013-09-10 Air Products And Chemicals, Inc. Process for producing silicon and oxide films from organoaminosilane precursors
US7781352B2 (en) 2007-06-06 2010-08-24 Asm Japan K.K. Method for forming inorganic silazane-based dielectric film
JP2009032962A (ja) 2007-07-27 2009-02-12 Panasonic Corp 半導体装置及びその製造方法
JP4935687B2 (ja) * 2008-01-19 2012-05-23 東京エレクトロン株式会社 成膜方法及び成膜装置
US7999355B2 (en) * 2008-07-11 2011-08-16 Air Products And Chemicals, Inc. Aminosilanes for shallow trench isolation films
JP5559988B2 (ja) * 2009-06-03 2014-07-23 東京エレクトロン株式会社 シリコン酸化膜用成膜原料およびそれを用いたシリコン酸化膜の成膜方法
US7825040B1 (en) 2009-06-22 2010-11-02 Asm Japan K.K. Method for depositing flowable material using alkoxysilane or aminosilane precursor
JP5011355B2 (ja) * 2009-07-30 2012-08-29 東京エレクトロン株式会社 成膜方法
SG178061A1 (en) * 2009-08-25 2012-03-29 Semiconductor Energy Lab Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing soi substrate
TW201131651A (en) * 2009-10-05 2011-09-16 Univ Tohoku Low dielectric constant insulating film
US8415259B2 (en) 2009-10-14 2013-04-09 Asm Japan K.K. Method of depositing dielectric film by modified PEALD method
US20110136347A1 (en) * 2009-10-21 2011-06-09 Applied Materials, Inc. Point-of-use silylamine generation
JP5692085B2 (ja) * 2009-11-11 2015-04-01 日本電気株式会社 抵抗変化素子、半導体装置、および抵抗変化素子の形成方法
US20110151677A1 (en) * 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
WO2011084812A2 (en) 2010-01-06 2011-07-14 Applied Materials, Inc. Flowable dielectric using oxide liner
JP5623296B2 (ja) * 2010-01-15 2014-11-12 信越化学工業株式会社 トリシリルアミンの製造方法
US8703625B2 (en) * 2010-02-04 2014-04-22 Air Products And Chemicals, Inc. Methods to prepare silicon-containing films
EP2362411A1 (en) * 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for reactive ion etching
US20120213940A1 (en) 2010-10-04 2012-08-23 Applied Materials, Inc. Atomic layer deposition of silicon nitride using dual-source precursor and interleaved plasma
US8455768B2 (en) * 2010-11-15 2013-06-04 International Business Machines Corporation Back-end-of-line planar resistor
US8685867B1 (en) 2010-12-09 2014-04-01 Novellus Systems, Inc. Premetal dielectric integration process
US8530983B2 (en) * 2011-04-08 2013-09-10 Georgia Tech Research Corporation Piezo-phototronic effect devices
US8592005B2 (en) * 2011-04-26 2013-11-26 Asm Japan K.K. Atomic layer deposition for controlling vertical film growth
DE102011075974A1 (de) * 2011-05-17 2012-11-22 Evonik Degussa Gmbh Verfahren zur Herstellung von Trisilylamin in der Gasphase
WO2013077321A1 (ja) * 2011-11-21 2013-05-30 株式会社日立国際電気 半導体装置の製造装置、半導体装置の製造方法及び記録媒体
US20130209343A1 (en) * 2012-02-10 2013-08-15 American Air Liquide, Inc. Liquid phase synthesis of trisilylamine
US8871656B2 (en) * 2012-03-05 2014-10-28 Applied Materials, Inc. Flowable films using alternative silicon precursors
US8846536B2 (en) 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
JP6195386B2 (ja) * 2012-03-09 2017-09-13 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ディスプレイ・デバイスのためのバリア材料
JP5949027B2 (ja) * 2012-03-23 2016-07-06 富士ゼロックス株式会社 静電荷像現像用トナー、静電荷像現像剤、トナーカートリッジ、現像剤カートリッジ、プロセスカートリッジ、画像形成装置、及び、画像形成方法
US20130260575A1 (en) * 2012-03-28 2013-10-03 Air Products And Chemicals, Inc. Silicon precursors and compositions comprising same for depositing low dielectric constant films
US9978585B2 (en) * 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
US10211310B2 (en) * 2012-06-12 2019-02-19 Novellus Systems, Inc. Remote plasma based deposition of SiOC class of films
EP2875166B1 (en) * 2012-07-20 2018-04-11 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Organosilane precursors for ald/cvd silicon-containing film applications
US9243324B2 (en) 2012-07-30 2016-01-26 Air Products And Chemicals, Inc. Methods of forming non-oxygen containing silicon-based films
DE102012214290A1 (de) * 2012-08-10 2014-02-13 Evonik Industries Ag Verfahren zur gekoppelten Herstellung von Polysilazanen und Trisilylamin
KR101361454B1 (ko) * 2012-08-23 2014-02-21 이근수 반도체 소자의 실리콘 산화막 형성 방법
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9330899B2 (en) * 2012-11-01 2016-05-03 Asm Ip Holding B.V. Method of depositing thin film
US9878234B2 (en) * 2012-12-10 2018-01-30 Arlen Moller Incorporating objective assessments of fantasy-team-owners' physical activity into fantasy sport platforms
KR101599952B1 (ko) 2012-12-31 2016-03-04 제일모직 주식회사 중합체 제조 방법 및 실리카계 절연막 형성용 조성물
KR101583232B1 (ko) 2012-12-31 2016-01-07 제일모직 주식회사 중합체 제조 방법 및 실리카계 절연막 형성용 조성물
US9343545B2 (en) 2013-03-06 2016-05-17 International Business Machines Corporation Electrical coupling of memory cell access devices to a word line
DE102013209802A1 (de) * 2013-05-27 2014-11-27 Evonik Industries Ag Verfahren zur gekoppelten Herstellung von Trisilylamin und Polysilazanen mit einer Molmasse bis 500 g/mol
KR101600337B1 (ko) 2013-06-07 2016-03-08 (주)디엔에프 신규한 아미노실릴아민 화합물, 이의 제조방법 및 이를 이용한 실리콘 함유 박막
EP3049499B1 (en) * 2013-09-27 2020-07-22 L'air Liquide, Société Anonyme Pour L'Étude Et L'exploitation Des Procédés Georges Claude Amine substituted trisilylamine and tridisilylamine compounds
US9905415B2 (en) * 2013-10-03 2018-02-27 Versum Materials Us, Llc Methods for depositing silicon nitride films
US10790139B2 (en) * 2014-01-24 2020-09-29 Applied Materials, Inc. Deposition of silicon and oxygen-containing films without an oxidizer
JP6345006B2 (ja) * 2014-07-08 2018-06-20 キヤノン株式会社 インクジェット記録ヘッド用基板の製造方法
US20160079034A1 (en) * 2014-09-12 2016-03-17 Applied Materials Inc. Flowable film properties tuning using implantation
US20160156066A1 (en) * 2014-10-20 2016-06-02 Massachusetts Institute Of Technology Polymer electrolytes for electrochemical cells
WO2016065221A1 (en) * 2014-10-24 2016-04-28 Air Products And Chemicals, Inc. Compositions and methods using same for deposition of silicon-containing films
US10354860B2 (en) * 2015-01-29 2019-07-16 Versum Materials Us, Llc Method and precursors for manufacturing 3D devices
US11001599B2 (en) 2015-03-23 2021-05-11 Gelest Technologies, Inc. N-alkyl substituted cyclic and oligomeric perhydridosilazanes, methods of preparation thereof, and silicon nitride films formed therefrom
US11124876B2 (en) * 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9777025B2 (en) * 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
KR20170019668A (ko) 2015-08-12 2017-02-22 (주)디엔에프 플라즈마 원자층 증착법을 이용한 실리콘 질화 박막의 제조방법
KR102692947B1 (ko) 2015-10-22 2024-08-06 어플라이드 머티어리얼스, 인코포레이티드 SiO 및 SiN을 포함하는 유동성 막들을 증착시키는 방법들
US12454753B2 (en) * 2018-06-15 2025-10-28 Versum Materials Us, Llc Compositions and methods using same for deposition of silicon-containing film
KR102613423B1 (ko) * 2015-12-21 2023-12-12 버슘머트리얼즈 유에스, 엘엘씨 규소-함유 막의 증착을 위한 조성물 및 이를 사용하는 방법
WO2017147150A1 (en) 2016-02-26 2017-08-31 Versum Materials Us, Llc Compositions and methods using same for deposition of silicon-containing film
US10384944B2 (en) * 2016-05-19 2019-08-20 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Preparation of Si—H containing iodosilanes via halide exchange reaction
US20180033614A1 (en) * 2016-07-27 2018-02-01 Versum Materials Us, Llc Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
US11017998B2 (en) * 2016-08-30 2021-05-25 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
US10468244B2 (en) * 2016-08-30 2019-11-05 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
US11735413B2 (en) * 2016-11-01 2023-08-22 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-k films to fill surface features
US10647578B2 (en) * 2016-12-11 2020-05-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications
IL273146B2 (en) * 2017-09-14 2025-04-01 Versum Mat Us Llc Compositions and methods for depositing layers containing silicone
US11078569B2 (en) * 2017-09-19 2021-08-03 Versum Materials Us, Llc Trisilylamine derivatives as precursors for high growth rate silicon-containing films
US11049714B2 (en) * 2017-09-19 2021-06-29 Versum Materials Us, Llc Silyl substituted organoamines as precursors for high growth rate silicon-containing films
US20190318925A1 (en) * 2018-04-11 2019-10-17 Versum Materials Us, Llc Monoorganoaminodisilane Precursors and Methods for Depositing Films Comprising Same
JP7598360B2 (ja) * 2019-07-25 2024-12-11 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ケイ素含有膜の堆積のためのシラシクロアルカンを含む組成物及びその組成物を使用する方法

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04329639A (ja) * 1991-05-01 1992-11-18 Kojundo Chem Lab Co Ltd 半導体装置のシリコン酸化膜の製造方法
JPH06310493A (ja) * 1993-04-23 1994-11-04 Kawasaki Steel Corp 半導体装置の製造装置
JPH07115092A (ja) * 1993-08-26 1995-05-02 Fujitsu Ltd 絶縁膜を有する半導体装置の製造方法
US5567661A (en) * 1993-08-26 1996-10-22 Fujitsu Limited Formation of planarized insulating film by plasma-enhanced CVD of organic silicon compound
JP2003203800A (ja) * 2001-09-14 2003-07-18 Sekisui Chem Co Ltd 常圧プラズマ処理方法および装置
JP2013070077A (ja) * 2005-03-17 2013-04-18 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude シリコン酸化物含有膜の形成方法
US20090232985A1 (en) * 2005-03-17 2009-09-17 Christian Dussarrat Method of forming silicon oxide containing films
US20070281495A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp ii - remote plasma enhanced deposition processes
JP2012169658A (ja) * 2006-10-16 2012-09-06 Applied Materials Inc Ｓｔｉ用の二酸化シリコンの高品質誘電体膜の形成：ｈａｒｐｉｉ−遠隔プラズマ増強型堆積プロセス−のための異なるシロキサンベースの前駆物質の使用
US20100164057A1 (en) * 2007-06-28 2010-07-01 Advanced Technology Materials, Inc. Precursors for silicon dioxide gap fill
JP2011511881A (ja) * 2007-06-28 2011-04-14 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 二酸化ケイ素ギャップ充填材のための前駆体
JP2012504867A (ja) * 2008-10-01 2012-02-23 アプライド マテリアルズ インコーポレイテッド 窒化ケイ素系膜又は炭化ケイ素系膜を形成する方法
US20100081293A1 (en) * 2008-10-01 2010-04-01 Applied Materials, Inc. Methods for forming silicon nitride based film or silicon carbon based film
US20120083133A1 (en) * 2010-10-05 2012-04-05 Applied Materials, Inc. Amine curing silicon-nitride-hydride films
JP2013545284A (ja) * 2010-10-05 2013-12-19 アプライド マテリアルズ インコーポレイテッド アミン硬化ケイ素−窒化物−水素化物膜
US20120148745A1 (en) * 2010-12-09 2012-06-14 Air Products And Chemicals, Inc. Aminovinylsilane for CVD and ALD SiO2 Films
JP2012124492A (ja) * 2010-12-09 2012-06-28 Air Products & Chemicals Inc ＣＶＤ及びＡＬＤのＳｉＯ２膜のためのアミノビニルシラン
US20130323435A1 (en) * 2012-06-01 2013-12-05 Air Products And Chemicals, Inc. Organoaminodisilane precursors and methods for depositing films comprising same
JP2014013889A (ja) * 2012-06-01 2014-01-23 Air Products And Chemicals Inc 有機アミノジシラン前駆体、及びそれを含む膜の堆積方法
JP2014132653A (ja) * 2012-12-11 2014-07-17 Air Products And Chemicals Inc アルコキシシリルアミン化合物及びその応用

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HONGGUN KIM, SEUNGHEON LEE ET AL: "Novel Flowable CVD Process Technology for sub-20nm Interlayer Dielectrics", 2012 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, JPN6018044057, 2012, US, ISSN: 0004023235 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018533215A (ja) * 2015-10-22 2018-11-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ＳｉＯおよびＳｉＮを含む流動性膜を堆積させる方法
CN114959653A (zh) * 2018-08-29 2022-08-30 弗萨姆材料美国有限责任公司 用于制备含硅和氮的膜的方法
JP2022516238A (ja) * 2018-12-21 2022-02-25 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ５５０℃以上の温度でＡＬＤを使用してＳｉ含有膜を堆積させるための前駆体及びプロセス
JP7164789B2 (ja) 2018-12-21 2022-11-02 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ５５０℃以上の温度でＡＬＤを使用してＳｉ含有膜を堆積させるための前駆体及びプロセス
JP2023507326A (ja) * 2019-12-20 2023-02-22 アプライド マテリアルズ インコーポレイテッド 炭素含有量が調整可能な炭窒化ケイ素間隙充填
JP7433437B2 (ja) 2019-12-20 2024-02-19 アプライド マテリアルズ インコーポレイテッド 炭素含有量が調整可能な炭窒化ケイ素間隙充填
JP2024063001A (ja) * 2019-12-20 2024-05-10 アプライド マテリアルズ インコーポレイテッド 炭素含有量が調整可能な炭窒化ケイ素間隙充填
JP7745670B2 (ja) 2019-12-20 2025-09-29 アプライド マテリアルズ インコーポレイテッド 炭素含有量が調整可能な炭窒化ケイ素間隙充填

Also Published As

Publication number Publication date
KR20170075766A (ko) 2017-07-03
US20170335449A1 (en) 2017-11-23
CN107257867A (zh) 2017-10-17
CN113025992B (zh) 2024-02-02
US10106890B2 (en) 2018-10-23
EP3209814A1 (en) 2017-08-30
TW201720953A (zh) 2017-06-16
CN113025992A (zh) 2021-06-25
JP2020014007A (ja) 2020-01-23
US20190271075A1 (en) 2019-09-05
SG11201703196WA (en) 2017-05-30
KR20200137054A (ko) 2020-12-08
TWI579399B (zh) 2017-04-21
CN107429391A (zh) 2017-12-01
JP6871161B2 (ja) 2021-05-12
CN113373428B (zh) 2023-07-14
EP3431629A1 (en) 2019-01-23
SG11201703195QA (en) 2017-05-30
KR102188751B1 (ko) 2020-12-08
KR20170074958A (ko) 2017-06-30
US20250188605A1 (en) 2025-06-12
US20190017167A1 (en) 2019-01-17
US20170338109A1 (en) 2017-11-23
US10316407B2 (en) 2019-06-11
EP3209814B1 (en) 2018-09-05
SG10202000545RA (en) 2020-03-30
EP3431629B1 (en) 2021-11-24
CN113373428A (zh) 2021-09-10
EP3209813B1 (en) 2019-03-13
JP2017533589A (ja) 2017-11-09
JP7152576B2 (ja) 2022-10-12
WO2016065219A1 (en) 2016-04-28
US12049695B2 (en) 2024-07-30
CN107429391B (zh) 2021-06-25
TW201615880A (zh) 2016-05-01
WO2016065221A1 (en) 2016-04-28
EP3209813A1 (en) 2017-08-30
JP2022000913A (ja) 2022-01-04
TWI658168B (zh) 2019-05-01
TW201615886A (zh) 2016-05-01
CN107257867B (zh) 2021-03-16
JP6949912B2 (ja) 2021-10-13
TWI575102B (zh) 2017-03-21
KR102079501B1 (ko) 2020-02-20
KR102332415B1 (ko) 2021-12-01

Similar Documents

Publication Publication Date Title
JP7152576B2 (ja) ケイ素含有膜の堆積のための組成物及びそれを使用した方法
US12505999B2 (en) Precursors and flowable CVD methods for making low-K films to fill surface features
JP7139475B2 (ja) ケイ素含有膜の堆積のための組成物及びそれを用いた方法
US11017998B2 (en) Precursors and flowable CVD methods for making low-K films to fill surface features
US12454753B2 (en) Compositions and methods using same for deposition of silicon-containing film

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170824

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170824

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180420

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180529

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180828

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181129

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20190507

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190909

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20190919

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20191024