JP2017028198A - エッチング方法及びエッチング装置 - Google Patents
エッチング方法及びエッチング装置 Download PDFInfo
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- JP2017028198A JP2017028198A JP2015147846A JP2015147846A JP2017028198A JP 2017028198 A JP2017028198 A JP 2017028198A JP 2015147846 A JP2015147846 A JP 2015147846A JP 2015147846 A JP2015147846 A JP 2015147846A JP 2017028198 A JP2017028198 A JP 2017028198A
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- Prior art keywords
- gas
- etching
- film
- oxidizing
- wafer
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- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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- ing And Chemical Polishing (AREA)
Abstract
Description
然る後、β−ジケトンからなるエッチングガスと、当該エッチングガスの分解を抑えるための分解抑制ガスとを供給して、酸化された前記コバルト膜をエッチングする第2のガス供給工程と、
を含むことを特徴とする。
前記載置台に載置された被処理体を加熱する加熱部と、
β−ジケトンからなるエッチングガスと、前記コバルト膜を酸化するための酸化ガスとを供給するガス供給部と、
前記コバルト膜をエッチングするために被処理体を250℃以下の温度に加熱しながら前記エッチングガスの流量に対する前記酸化ガスの流量の割合が0.5%〜50%となるように当該エッチングガス及び酸化ガスを前記被処理体に供給するように制御信号を出力する制御部と、
を含むことを特徴とする。
前記コバルト膜を酸化するための酸化ガスを前記被処理体に供給する酸化ガス供給部と、
β−ジケトンからなるエッチングガスを前記被処理体に供給するエッチングガス供給部と、
当該エッチングガスの分解を抑えるための分解抑制ガスを前記被処理体に供給する分解抑制ガス供給部と、
前記酸化ガスを前記被処理体に供給する第1のステップと、次いで前記エッチングガス及び前記分解抑制ガスを被処理体に供給する第2のステップと、を行うように制御信号を出力する制御部と、
を含むことを特徴とする。
本発明の他の発明によれば、コバルト膜の酸化後、エッチングガスとエッチングガスの分解抑制ガスを被処理体に供給することで、エッチングガスの分解が抑えられた状態でエッチングが行われる。従って、エッチングガスの分解によるカーボン膜の形成を抑えつつ、被処理体表面のコバルト膜をエッチングすることができる。
本発明の第1の実施形態に係るエッチング方法を実施するエッチング装置1について図1を参照しながら説明する。このエッチング装置1で処理される被処理体であるウエハWの表面には、半導体デバイスの配線を形成するためのCo膜が形成されている。エッチング装置1は、横断面形状が概略円形の真空チャンバである処理容器11を備えている。図中12はウエハWの受け渡しを行うために処理容器11の側面に開口した搬入出口であり、ゲートバルブ13により開閉される。また、処理容器11には、その内面を所定の温度に加熱する図示しないヒーターが設けられている。
Co+O2→CoOx・・・式1
CoOx+Hfac→Co(Hfac)2+H2O・・・式2
Co(Hfac)2(固体)→Co(Hfac)2(気体)・・・式3
続いて、本発明の第2の実施形態に係るエッチング方法を実施するエッチング装置7について、エッチング装置1との差異点を中心に図4を参照しながら説明する。このエッチング装置7には、下流端が分散室33に開口したガス供給管46が設けられ、ガス供給管46の上流端はバルブV8、V9、流量調整部56をこの順に介してHfacガスの分解を抑制するための水素(H2)ガスの供給源64に接続されている。
以下、本発明に関連して行われた評価試験について説明する。
(評価試験1)
評価試験1−1として、表面にCo膜が形成された複数のウエハWについて、上記の第1の実施形態で説明したように各ガスを供給してCo膜のエッチング処理を行った。ただしHfacガス及びO2ガスを供給する際の各ウエハWの温度は、夫々250℃、275℃、300℃とした。そして、エッチング終了後、ウエハWの表面のカーボン膜の膜厚を測定した。
評価試験2−1として、第1の実施形態と同様にHfacガス及びO2ガスを同時にウエハWに対して、ウエハWの表面のCo膜のエッチング処理を行った。この評価試験2−1では、Hfacガス及びO2ガスの供給時における処理容器11内の圧力は20Torr(2.67×103Pa)に設定した。また、エッチング処理は複数枚のウエハWについて行い、互いに異なる温度になるように各ウエハWを加熱して処理を行った。エッチング処理後は、各ウエハWのCo膜のエッチングレート(単位:nm/分)を測定した。また、評価試験2−2として評価試験2−1と略同様にウエハWを処理し、Co膜のエッチングレートを測定した。評価試験2−2では評価試験2−1と異なり、Hfacガス及びO2ガスの供給時における処理容器11内の圧力は100Torr(1.33×104Pa)に設定した。
評価試験3として、ウエハWに形成されたCo膜の表面について、X線光電子分光法(XPS)によってC1sについてのスペクトルを取得した。そして、このウエハWについて、第1の実施形態と同様にHfacガス及びO2ガスを同時に供給して、ウエハWの表面のCo膜のエッチング処理を行った。ただし、これらのガスが供給される際のウエハWの温度は、第1の実施形態で示した温度とは異なる300℃とした。エッチング処理後に、XPSによってウエハW表面のC1sについてのスペクトルを取得した。
評価試験4として、ウエハWに形成されたCo膜の表面について、第1の実施形態と同様にHfacガス及びO2ガスを同時に供給して、複数のウエハWの表面のCo膜のエッチング処理を行った。ただし、これらのガスが供給される際のウエハWの温度は、ウエハW毎に異なるように設定した。200℃以上250℃未満に加熱した試験を評価試験4−1、250℃で加熱した試験を評価試験4−2、275℃で加熱した試験を評価試験4−3、300℃で加熱した試験を評価試験4−4とする。エッチング処理後に、各評価試験4−1〜4−4のウエハWの表面について、XPSによりスペクトルを取得した。
評価試験5として、第1の実施形態で説明した手法によって、複数のウエハWのCo膜に対してエッチング処理を行った。ただし、この評価試験5のエッチング処理では、ウエハW毎に、互いに異なるCoを酸化するための酸化ガスを用いて処理を行った。酸化ガスとしては、O3ガス、O2ガス、NOガス、N2O(亜酸化窒素)ガス、H2O2(過酸化水素)ガスを夫々用いた。図26は、評価試験5の結果を示すグラフである。縦軸は所定の時間における1回のエッチング処理あたりのCoのエッチング量(nm/cycleと表記)、即ちエッチング速度を示している。グラフに示されるように、上記の酸化ガスのうち、いずれの酸化ガスを用いた場合でもエッチングを行うことができることが確認された。グラフから明らかなように、O3ガスを用いた場合及びNOガスを用いた場合には、O2ガスを用いた場合よりもエッチング量が大きい。従って、この評価試験5から酸化ガスとして、これらO3ガスまたはNOガスを用いることが、特に有効であることが確認された。
1 エッチング装置
10 制御部
11 処理容器
2 ステージ
22 ヒーター
3 ガス供給部
61 Hfacガス供給源
62 O2ガス供給源
64 H2ガス供給源
Claims (8)
- 表面にコバルト膜が形成された被処理体に、前記コバルト膜を酸化するための酸化ガスを供給する第1のガス供給工程と、
然る後、β−ジケトンからなるエッチングガスと、当該エッチングガスの分解を抑えるための分解抑制ガスとを供給して、酸化された前記コバルト膜をエッチングする第2のガス供給工程と、
を含むことを特徴とするエッチング方法。 - 前記第1のガス供給工程と、前記第2のガス供給工程とからなるサイクルを繰り返し行う工程を含むことを特徴とする請求項1記載のエッチング方法。
- 前記第2のガス供給工程は、前記被処理体を250℃以上、前記エッチングガスの分解温度より低い温度に加熱する工程を含むことを特徴とする請求項1または2記載のエッチング方法。
- 前記分解抑制ガスは、水素ガスであることを特徴とする請求項1ないし3のいずれか一つに記載のエッチング方法。
- 表面にコバルト膜が形成された被処理体を250℃以下の温度に加熱しながらβ−ジケトンからなるエッチングガスと、前記コバルト膜を酸化するための酸化ガスとを、前記エッチングガスの流量に対する前記酸化ガスの流量の割合が0.5%〜50%となるように前記被処理体に供給して、前記コバルト膜をエッチングする工程を含むことを特徴とするエッチング方法。
- 前記酸化ガスは、一酸化窒素ガスまたはオゾンガスであることを特徴とする請求項5記載のエッチング方法。
- 処理容器内に設けられ、表面にコバルト膜が形成された被処理体を載置する載置台と、
前記コバルト膜を酸化するための酸化ガスを前記被処理体に供給する酸化ガス供給部と、
β−ジケトンからなるエッチングガスを前記被処理体に供給するエッチングガス供給部と、
当該エッチングガスの分解を抑えるための分解抑制ガスを前記被処理体に供給する分解抑制ガス供給部と、
前記酸化ガスを前記被処理体に供給する第1のステップと、次いで前記エッチングガス及び前記分解抑制ガスを前記被処理体に供給する第2のステップと、を行うように制御信号を出力する制御部と、
を含むことを特徴とするエッチング装置。 - 処理容器内に設けられ、表面にコバルト膜が形成された被処理体を載置する載置台と、
前記載置台に載置された被処理体を加熱する加熱部と、
β−ジケトンからなるエッチングガスと、前記コバルト膜を酸化するための酸化ガスとを供給するガス供給部と、
前記コバルト膜をエッチングするために被処理体を250℃以下の温度に加熱しながら前記エッチングガスの流量に対する前記酸化ガスの流量の割合が0.5%〜50%となるように当該エッチングガス及び酸化ガスを前記被処理体に供給するように制御信号を出力する制御部と、
を含むことを特徴とするエッチング装置。
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JP2020136602A (ja) * | 2019-02-25 | 2020-08-31 | 株式会社Adeka | エッチング方法 |
CN112542400A (zh) * | 2019-09-20 | 2021-03-23 | 东京毅力科创株式会社 | 蚀刻装置和蚀刻方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
CN111699278B (zh) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102244395B1 (ko) * | 2018-03-30 | 2021-04-23 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 에칭 장치 |
JP7063117B2 (ja) * | 2018-03-30 | 2022-05-09 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
KR20190128558A (ko) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
TWI819010B (zh) | 2018-06-27 | 2023-10-21 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法 |
KR20210027265A (ko) | 2018-06-27 | 2021-03-10 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 막 및 구조체 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
US11515167B2 (en) * | 2019-02-01 | 2022-11-29 | Hitachi High-Tech Corporation | Plasma etching method and plasma processing apparatus |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
JP2021019198A (ja) | 2019-07-19 | 2021-02-15 | エーエスエム・アイピー・ホールディング・ベー・フェー | トポロジー制御されたアモルファスカーボンポリマー膜の形成方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
CN110545624B (zh) * | 2019-10-12 | 2021-02-12 | 中山市宝悦嘉电子有限公司 | 一种线路板蚀刻用蚀刻机上盖装置 |
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KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
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KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
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US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
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USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794492A (ja) * | 1993-06-24 | 1995-04-07 | Nec Corp | 半導体装置の製造方法 |
JPH10321594A (ja) * | 1997-05-22 | 1998-12-04 | Sharp Corp | 金属酸化物を選択的に除去し金属表面をインサイチュに清浄化する方法およびシステムならびに集積回路 |
JP2000138202A (ja) * | 1998-10-30 | 2000-05-16 | Nec Corp | 半導体装置の製造方法及び製造装置 |
JP2008078618A (ja) * | 2006-08-24 | 2008-04-03 | Fujitsu Ltd | 基板処理方法、半導体装置の製造方法、基板処理装置および記録媒体 |
JP2012156259A (ja) * | 2011-01-25 | 2012-08-16 | Tokyo Electron Ltd | 金属膜の加工方法及び加工装置 |
JP2014170894A (ja) * | 2013-03-05 | 2014-09-18 | Tokyo Electron Ltd | 金属層をエッチングする方法 |
JP2014236096A (ja) * | 2013-05-31 | 2014-12-15 | セントラル硝子株式会社 | ドライエッチング方法、ドライエッチング装置、金属膜及びそれを備えたデバイス |
JP2015012243A (ja) * | 2013-07-01 | 2015-01-19 | 東京エレクトロン株式会社 | 被処理体の処理方法 |
US20150099369A1 (en) * | 2013-10-03 | 2015-04-09 | Applied Materials, Inc. | Process for etching metal using a combination of plasma and solid state sources |
JP2016029696A (ja) * | 2014-07-25 | 2016-03-03 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0180242B1 (en) * | 1984-11-02 | 1991-01-23 | Teijin Limited | Magnetic recording medium, method for producing the same, and method of recording and reproduction using the same and magnetic head |
US5094701A (en) | 1990-03-30 | 1992-03-10 | Air Products And Chemicals, Inc. | Cleaning agents comprising beta-diketone and beta-ketoimine ligands and a process for using the same |
KR100468847B1 (ko) * | 2002-04-02 | 2005-01-29 | 삼성전자주식회사 | 알콜을 이용한 금속산화물 박막의 화학기상증착법 |
JP2004091829A (ja) | 2002-08-30 | 2004-03-25 | Tokyo Electron Ltd | エッチング方法及びエッチング装置 |
JP4706260B2 (ja) * | 2004-02-25 | 2011-06-22 | 東京エレクトロン株式会社 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
JP2010083700A (ja) * | 2008-09-30 | 2010-04-15 | Dainippon Printing Co Ltd | コバルト酸化物膜を有する積層体 |
US20140367674A1 (en) * | 2011-11-18 | 2014-12-18 | Japan Science And Technology Agency | Process for forming an amorphous conductive oxide film |
US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
-
2015
- 2015-07-27 JP JP2015147846A patent/JP6529371B2/ja active Active
-
2016
- 2016-07-22 KR KR1020160093555A patent/KR101898329B1/ko active IP Right Grant
- 2016-07-25 TW TW105123371A patent/TWI691616B/zh active
- 2016-07-25 US US15/219,096 patent/US9991138B2/en active Active
- 2016-07-27 CN CN201610599442.1A patent/CN106409656B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794492A (ja) * | 1993-06-24 | 1995-04-07 | Nec Corp | 半導体装置の製造方法 |
JPH10321594A (ja) * | 1997-05-22 | 1998-12-04 | Sharp Corp | 金属酸化物を選択的に除去し金属表面をインサイチュに清浄化する方法およびシステムならびに集積回路 |
JP2000138202A (ja) * | 1998-10-30 | 2000-05-16 | Nec Corp | 半導体装置の製造方法及び製造装置 |
JP2008078618A (ja) * | 2006-08-24 | 2008-04-03 | Fujitsu Ltd | 基板処理方法、半導体装置の製造方法、基板処理装置および記録媒体 |
JP2012156259A (ja) * | 2011-01-25 | 2012-08-16 | Tokyo Electron Ltd | 金属膜の加工方法及び加工装置 |
JP2014170894A (ja) * | 2013-03-05 | 2014-09-18 | Tokyo Electron Ltd | 金属層をエッチングする方法 |
JP2014236096A (ja) * | 2013-05-31 | 2014-12-15 | セントラル硝子株式会社 | ドライエッチング方法、ドライエッチング装置、金属膜及びそれを備えたデバイス |
JP2015012243A (ja) * | 2013-07-01 | 2015-01-19 | 東京エレクトロン株式会社 | 被処理体の処理方法 |
US20150099369A1 (en) * | 2013-10-03 | 2015-04-09 | Applied Materials, Inc. | Process for etching metal using a combination of plasma and solid state sources |
JP2016029696A (ja) * | 2014-07-25 | 2016-03-03 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7362621B2 (ja) | 2017-12-28 | 2023-10-17 | ラム リサーチ コーポレーション | 化学的阻害を使用する膜の共形性調整 |
JP2021509444A (ja) * | 2017-12-28 | 2021-03-25 | ラム リサーチ コーポレーションLam Research Corporation | 化学的阻害を使用する膜の共形性調整 |
KR20200100586A (ko) | 2019-02-14 | 2020-08-26 | 주식회사 히타치하이테크 | 반도체 제조 장치 |
US11380523B2 (en) | 2019-02-14 | 2022-07-05 | Hitachi High-Tech Corporation | Semiconductor manufacturing apparatus |
JP2020136602A (ja) * | 2019-02-25 | 2020-08-31 | 株式会社Adeka | エッチング方法 |
KR20220058633A (ko) * | 2019-09-19 | 2022-05-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속들의 원자 층 에칭 |
JP2022549244A (ja) * | 2019-09-19 | 2022-11-24 | アプライド マテリアルズ インコーポレイテッド | 金属の原子層エッチング |
KR102584970B1 (ko) | 2019-09-19 | 2023-10-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속들의 원자 층 에칭 |
JP7357778B2 (ja) | 2019-09-19 | 2023-10-06 | アプライド マテリアルズ インコーポレイテッド | 金属の原子層エッチング |
JP2021050366A (ja) * | 2019-09-20 | 2021-04-01 | 東京エレクトロン株式会社 | エッチング装置及びエッチング方法 |
CN112542400A (zh) * | 2019-09-20 | 2021-03-23 | 东京毅力科创株式会社 | 蚀刻装置和蚀刻方法 |
JP7379993B2 (ja) | 2019-09-20 | 2023-11-15 | 東京エレクトロン株式会社 | エッチング装置及びエッチング方法 |
WO2022080288A1 (ja) * | 2020-10-16 | 2022-04-21 | セントラル硝子株式会社 | ウェットエッチング方法 |
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US9991138B2 (en) | 2018-06-05 |
KR20170013169A (ko) | 2017-02-06 |
TWI691616B (zh) | 2020-04-21 |
TW201716633A (zh) | 2017-05-16 |
CN106409656A (zh) | 2017-02-15 |
US20170032990A1 (en) | 2017-02-02 |
KR101898329B1 (ko) | 2018-09-12 |
CN106409656B (zh) | 2019-06-25 |
JP6529371B2 (ja) | 2019-06-12 |
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