JP5599623B2 - 堆積チャンバにおける酸化からの導電体の保護 - Google Patents
堆積チャンバにおける酸化からの導電体の保護 Download PDFInfo
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- 230000008021 deposition Effects 0.000 title claims description 71
- 230000003647 oxidation Effects 0.000 title description 15
- 238000007254 oxidation reaction Methods 0.000 title description 15
- 239000004020 conductor Substances 0.000 title description 7
- 238000000151 deposition Methods 0.000 claims description 93
- 239000007789 gas Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 37
- 239000003638 chemical reducing agent Substances 0.000 claims description 25
- 238000005229 chemical vapour deposition Methods 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 18
- 239000011261 inert gas Substances 0.000 claims description 14
- -1 transition metal nitride Chemical class 0.000 claims description 13
- 229910052723 transition metal Inorganic materials 0.000 claims description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000003672 processing method Methods 0.000 claims description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 42
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 15
- 238000005137 deposition process Methods 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 12
- 238000000137 annealing Methods 0.000 description 8
- 238000001816 cooling Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005429 filling process Methods 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- Microelectronics & Electronic Packaging (AREA)
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- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
(1)堆積後の充填の間に還元ガスを供給せず、堆積後アニールを実施しない“標準”プロセス。堆積チャンバは単に窒素ガスで充填し、基板をアンロード温度まで冷却する。
(2)堆積後の充填の間に還元ガスを供給する本発明の実施形態によるプロセス。還元ガスは、H2濃度4vol.%であるH2とN2との混合物から成る(フォーミングガス)。
(3)堆積後の充填の間に還元剤を供給しない標準プロセス。標準プロセスに加えて、基板に堆積チャンバ外で堆積後アニールを施す。堆積チャンバ外アニールは、0.4%NH3、19.5%H2を含み、残りの雰囲気がN2であるアニールチャンバにおいて、約750℃の温度で30分間実施した。
12 管
14 下部支持面
20 反応チャンバ
22 ガス入口
24 ガス出口
30 ウエハボート
40 基板
90 フランジ
Claims (17)
- 化学気相堆積(CVD)チャンバにおいて基板を提供する段階と、
堆積圧力及び堆積温度の前記CVDチャンバにおいて、前記基板上に遷移金属窒化物膜を堆積させる段階と、
続いて、不活性ガスと還元剤とを含む還元ガスを前記CVDチャンバへと流すことによって、前記堆積圧力からアンロード圧力まで前記CVDチャンバ内の圧力を増加する段階と、
前記CVDチャンバにおいて、圧力を増加させると同時に、前記堆積温度から、250℃以上であるアンロード温度まで前記基板温度を低下させる段階と、
アンロード圧力及びアンロード温度の前記CVDチャンバから前記基板を取り出す段階と、
を含むことを特徴とする遷移金属窒化物膜の形成方法。 - 前記堆積圧力が10Torr以下であることを特徴とする請求項1に記載の方法。
- 前記アンロード圧力が大気圧であることを特徴とする請求項1に記載の方法。
- 前記アンロード温度が300℃から400℃の間であることを特徴とする請求項1に記載の方法。
- 前記遷移金属窒化物が40nm以下の厚さを有することを特徴とする請求項1に記載の方法。
- 前記還元剤がH2を含むことを特徴とする請求項1に記載の方法。
- 前記CVDチャンバ内の前記還元剤の濃度が4vol%以下であることを特徴とする請求項1に記載の方法。
- 前記遷移金属窒化物が窒化チタンを含むことを特徴とする請求項1に記載の方法。
- 前記CVDチャンバが、25以上の基板を処理するよう構成された垂直バッチ反応器を含むことを特徴とする請求項1に記載の方法。
- 前記遷移金属窒化物膜を堆積する段階の後に、前記還元ガスを流し始めることを特徴とする請求項1に記載の方法。
- 堆積チャンバにおいて基板を提供する段階と、
堆積圧力の前記チャンバにおいて、前記基板上に導電膜を堆積させる段階と、
続いて、不活性ガスと還元剤とを含み、前記チャンバ内の前記還元剤の量が前記不活性ガスの量より少ない還元ガスを前記チャンバへと流すことによって、前記チャンバ内の圧力を増加する段階と、
アンロード圧力および250℃以上のアンロード温度である前記チャンバから前記基板を取り出す段階と、
を含むことを特徴とする半導体処理方法。 - 前記堆積圧力が10Torr以下であることを特徴とする請求項11に記載の方法。
- 前記アンロード圧力が大気圧であり、前記アンロード温度が300℃以上であることを特徴とする請求項11に記載の方法。
- 前記導電膜が遷移金属窒化物またはシリコンを含むことを特徴とする請求項11に記載の方法。
- 取り出された基板の前記導電膜が80μΩ・cm以下の抵抗率を有することを特徴とする請求項14に記載の方法。
- 前記還元剤が、H2と、メタノールと、エタノールと、プロパノールと、イソプロピルアルコールと、それらの混合物とからなる群から選択されることを特徴とする請求項11に記載の方法。
- 前記チャンバにおいて、前記還元剤がガスの全容積の2vol%以下を示すことを特徴とする請求項11に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/390,145 | 2009-02-20 | ||
US12/390,145 US7829457B2 (en) | 2009-02-20 | 2009-02-20 | Protection of conductors from oxidation in deposition chambers |
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JP2010209465A JP2010209465A (ja) | 2010-09-24 |
JP2010209465A5 JP2010209465A5 (ja) | 2012-04-19 |
JP5599623B2 true JP5599623B2 (ja) | 2014-10-01 |
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US (1) | US7829457B2 (ja) |
JP (1) | JP5599623B2 (ja) |
KR (1) | KR101548129B1 (ja) |
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US8889565B2 (en) * | 2009-02-13 | 2014-11-18 | Asm International N.V. | Selective removal of oxygen from metal-containing materials |
US9127340B2 (en) * | 2009-02-13 | 2015-09-08 | Asm International N.V. | Selective oxidation process |
KR20170040269A (ko) * | 2014-08-01 | 2017-04-12 | 더 거번먼트 오브 더 유나이티드 스테이츠 오브 아메리카 에즈 레프리젠티드 바이 더 세크러테리 오브 더 네이비 | 화합물 반도체 장치를 위한 에피택셜 금속성 전이 금속 질화물 레이어 |
JP7258826B2 (ja) | 2020-06-30 | 2023-04-17 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
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