JP2016531836A5 - - Google Patents

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Publication number
JP2016531836A5
JP2016531836A5 JP2016540410A JP2016540410A JP2016531836A5 JP 2016531836 A5 JP2016531836 A5 JP 2016531836A5 JP 2016540410 A JP2016540410 A JP 2016540410A JP 2016540410 A JP2016540410 A JP 2016540410A JP 2016531836 A5 JP2016531836 A5 JP 2016531836A5
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JP
Japan
Prior art keywords
silicon carbide
seed
crucible
precursor
substantially solid
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JP2016540410A
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English (en)
Japanese (ja)
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JP6487446B2 (ja
JP2016531836A (ja
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Priority claimed from PCT/US2014/054255 external-priority patent/WO2015035140A1/en
Publication of JP2016531836A publication Critical patent/JP2016531836A/ja
Publication of JP2016531836A5 publication Critical patent/JP2016531836A5/ja
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JP2016540410A 2013-09-06 2014-09-05 バルクの炭化ケイ素の製造方法 Active JP6487446B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361874597P 2013-09-06 2013-09-06
US61/874,597 2013-09-06
PCT/US2014/054255 WO2015035140A1 (en) 2013-09-06 2014-09-05 Method for producing bulk silicon carbide

Publications (3)

Publication Number Publication Date
JP2016531836A JP2016531836A (ja) 2016-10-13
JP2016531836A5 true JP2016531836A5 (enExample) 2017-10-19
JP6487446B2 JP6487446B2 (ja) 2019-03-20

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ID=52624259

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JP2016540410A Active JP6487446B2 (ja) 2013-09-06 2014-09-05 バルクの炭化ケイ素の製造方法

Country Status (7)

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US (2) US10801126B2 (enExample)
JP (1) JP6487446B2 (enExample)
KR (1) KR102266585B1 (enExample)
CN (2) CN110670124B (enExample)
DE (1) DE112014004096T5 (enExample)
TW (2) TWI690627B (enExample)
WO (1) WO2015035140A1 (enExample)

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US11846038B2 (en) * 2018-08-30 2023-12-19 Senic Inc. Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material
CN109402731B (zh) * 2018-10-17 2021-01-15 福建北电新材料科技有限公司 一种高纯半绝缘碳化硅晶体生长装置及其方法
JP2020189756A (ja) * 2019-05-17 2020-11-26 信越半導体株式会社 結晶成長装置及び結晶成長方法
EP3760766B1 (en) * 2019-07-03 2022-03-09 SiCrystal GmbH System for efficient manufacturing of a plurality of high-quality semiconductor single crystals, and method of manufacturing same
EP3760765B1 (en) 2019-07-03 2022-03-16 SiCrystal GmbH System for horizontal growth of high-quality semiconductor single crystals, and method of manufacturing same
JP7434802B2 (ja) * 2019-10-30 2024-02-21 株式会社レゾナック 結晶成長装置及び結晶成長方法
CN112160025B (zh) * 2020-08-27 2021-07-16 露笑新能源技术有限公司 一种基于晶体炉的加热组件结构
US20220251725A1 (en) * 2021-02-09 2022-08-11 National Chung Shan Institute Of Science And Technology Method of growing on-axis silicon carbide single crystal by regulating silicon carbide source material in size
CN113652750B (zh) * 2021-08-18 2022-07-12 山东天岳先进科技股份有限公司 具有环形形貌的碳化硅晶体及其制备方法和制得的衬底
CN116716655B (zh) * 2023-06-14 2024-04-02 通威微电子有限公司 生长高质量碳化硅晶体的装置、方法及碳化硅晶体

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