DE112014004096T5 - Verfahren zur Herstellung von Massen-Siliciumcarbid - Google Patents

Verfahren zur Herstellung von Massen-Siliciumcarbid Download PDF

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Publication number
DE112014004096T5
DE112014004096T5 DE112014004096.7T DE112014004096T DE112014004096T5 DE 112014004096 T5 DE112014004096 T5 DE 112014004096T5 DE 112014004096 T DE112014004096 T DE 112014004096T DE 112014004096 T5 DE112014004096 T5 DE 112014004096T5
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DE
Germany
Prior art keywords
silicon carbide
seed crystal
crucible
precursor
hot zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112014004096.7T
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German (de)
English (en)
Inventor
Roman V. Drachev
David S. Lyttle
Parthasarathy Santhanaraghavan
Andriy M. Andrukhiv
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GTAT Corp
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GTAT Corp
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Filing date
Publication date
Application filed by GTAT Corp filed Critical GTAT Corp
Publication of DE112014004096T5 publication Critical patent/DE112014004096T5/de
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112014004096.7T 2013-09-06 2014-09-05 Verfahren zur Herstellung von Massen-Siliciumcarbid Pending DE112014004096T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361874597P 2013-09-06 2013-09-06
US61/874,597 2013-09-06
PCT/US2014/054255 WO2015035140A1 (en) 2013-09-06 2014-09-05 Method for producing bulk silicon carbide

Publications (1)

Publication Number Publication Date
DE112014004096T5 true DE112014004096T5 (de) 2016-06-23

Family

ID=52624259

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112014004096.7T Pending DE112014004096T5 (de) 2013-09-06 2014-09-05 Verfahren zur Herstellung von Massen-Siliciumcarbid

Country Status (7)

Country Link
US (2) US10801126B2 (enExample)
JP (1) JP6487446B2 (enExample)
KR (1) KR102266585B1 (enExample)
CN (2) CN110670124B (enExample)
DE (1) DE112014004096T5 (enExample)
TW (2) TWI690627B (enExample)
WO (1) WO2015035140A1 (enExample)

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EP3760766B1 (en) * 2019-07-03 2022-03-09 SiCrystal GmbH System for efficient manufacturing of a plurality of high-quality semiconductor single crystals, and method of manufacturing same
EP3760765B1 (en) * 2019-07-03 2022-03-16 SiCrystal GmbH System for horizontal growth of high-quality semiconductor single crystals, and method of manufacturing same
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US20220251725A1 (en) * 2021-02-09 2022-08-11 National Chung Shan Institute Of Science And Technology Method of growing on-axis silicon carbide single crystal by regulating silicon carbide source material in size
CN113652750B (zh) * 2021-08-18 2022-07-12 山东天岳先进科技股份有限公司 具有环形形貌的碳化硅晶体及其制备方法和制得的衬底
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CN202440568U (zh) * 2012-01-17 2012-09-19 山东天岳先进材料科技有限公司 一种用于生长碳化硅晶棒的石墨坩埚
US9738991B2 (en) * 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
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Also Published As

Publication number Publication date
CN105518187B (zh) 2019-11-08
TWI654346B (zh) 2019-03-21
US20210032770A1 (en) 2021-02-04
WO2015035140A1 (en) 2015-03-12
CN105518187A (zh) 2016-04-20
US20150068445A1 (en) 2015-03-12
US10801126B2 (en) 2020-10-13
JP2016531836A (ja) 2016-10-13
US11505876B2 (en) 2022-11-22
TW201920784A (zh) 2019-06-01
TW201522726A (zh) 2015-06-16
CN110670124A (zh) 2020-01-10
JP6487446B2 (ja) 2019-03-20
KR102266585B1 (ko) 2021-06-18
KR20160050086A (ko) 2016-05-10
CN110670124B (zh) 2021-07-30
TWI690627B (zh) 2020-04-11

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