CN202440568U - 一种用于生长碳化硅晶棒的石墨坩埚 - Google Patents
一种用于生长碳化硅晶棒的石墨坩埚 Download PDFInfo
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- CN202440568U CN202440568U CN2012200208472U CN201220020847U CN202440568U CN 202440568 U CN202440568 U CN 202440568U CN 2012200208472 U CN2012200208472 U CN 2012200208472U CN 201220020847 U CN201220020847 U CN 201220020847U CN 202440568 U CN202440568 U CN 202440568U
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- crucible
- silicon carbide
- graphite
- graphite inner
- crystal bar
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 239000010439 graphite Substances 0.000 title claims abstract description 41
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 32
- 239000013078 crystal Substances 0.000 title claims abstract description 29
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 20
- 241000209456 Plumbago Species 0.000 claims description 9
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001835 Lely method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010020843 Hyperthermia Diseases 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 230000036031 hyperthermia Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
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Application Number | Priority Date | Filing Date | Title |
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CN2012200208472U CN202440568U (zh) | 2012-01-17 | 2012-01-17 | 一种用于生长碳化硅晶棒的石墨坩埚 |
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CN2012200208472U CN202440568U (zh) | 2012-01-17 | 2012-01-17 | 一种用于生长碳化硅晶棒的石墨坩埚 |
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CN202440568U true CN202440568U (zh) | 2012-09-19 |
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CN2012200208472U Expired - Lifetime CN202440568U (zh) | 2012-01-17 | 2012-01-17 | 一种用于生长碳化硅晶棒的石墨坩埚 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105518190A (zh) * | 2013-09-06 | 2016-04-20 | Gtat公司 | 从硅碳化物先驱物来生产大块硅碳化物的方法和器具 |
CN105518187A (zh) * | 2013-09-06 | 2016-04-20 | Gtat公司 | 生产大块硅碳化物的方法 |
CN106367812A (zh) * | 2016-10-21 | 2017-02-01 | 北京鼎泰芯源科技发展有限公司 | 一种提高碳化硅粉源径向温度均匀性的石墨坩埚 |
CN107059130A (zh) * | 2017-04-20 | 2017-08-18 | 山东大学 | 一种减少碳化硅单晶中包裹体的新型坩埚及利用坩埚生长单晶的方法 |
CN111088524A (zh) * | 2019-12-24 | 2020-05-01 | 山东天岳先进材料科技有限公司 | 一种大尺寸碳化硅单晶、衬底及制备方法和使用的装置 |
CN111172592A (zh) * | 2019-12-24 | 2020-05-19 | 山东天岳先进材料科技有限公司 | 一种掺杂碳化硅单晶、衬底及制备方法和使用的装置 |
CN111394788A (zh) * | 2020-04-03 | 2020-07-10 | 江苏超芯星半导体有限公司 | 一种制备立方体碳化硅晶体的方法及装置 |
-
2012
- 2012-01-17 CN CN2012200208472U patent/CN202440568U/zh not_active Expired - Lifetime
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105518190A (zh) * | 2013-09-06 | 2016-04-20 | Gtat公司 | 从硅碳化物先驱物来生产大块硅碳化物的方法和器具 |
CN105518187A (zh) * | 2013-09-06 | 2016-04-20 | Gtat公司 | 生产大块硅碳化物的方法 |
CN105518187B (zh) * | 2013-09-06 | 2019-11-08 | Gtat公司 | 生产大块硅碳化物的方法 |
CN105518190B (zh) * | 2013-09-06 | 2021-08-27 | Gtat公司 | 从硅碳化物先驱物来生产大块硅碳化物的方法和器具 |
CN106367812A (zh) * | 2016-10-21 | 2017-02-01 | 北京鼎泰芯源科技发展有限公司 | 一种提高碳化硅粉源径向温度均匀性的石墨坩埚 |
CN107059130A (zh) * | 2017-04-20 | 2017-08-18 | 山东大学 | 一种减少碳化硅单晶中包裹体的新型坩埚及利用坩埚生长单晶的方法 |
CN107059130B (zh) * | 2017-04-20 | 2019-06-18 | 山东大学 | 一种减少碳化硅单晶中包裹体的坩埚及利用坩埚生长单晶的方法 |
CN111088524A (zh) * | 2019-12-24 | 2020-05-01 | 山东天岳先进材料科技有限公司 | 一种大尺寸碳化硅单晶、衬底及制备方法和使用的装置 |
CN111172592A (zh) * | 2019-12-24 | 2020-05-19 | 山东天岳先进材料科技有限公司 | 一种掺杂碳化硅单晶、衬底及制备方法和使用的装置 |
CN111172592B (zh) * | 2019-12-24 | 2021-03-26 | 山东天岳先进科技股份有限公司 | 一种掺杂碳化硅单晶、衬底及制备方法和使用的装置 |
CN111394788A (zh) * | 2020-04-03 | 2020-07-10 | 江苏超芯星半导体有限公司 | 一种制备立方体碳化硅晶体的方法及装置 |
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Owner name: SHANDONG TIANYUE CRYSTAL MATERIAL CO., LTD. Free format text: FORMER OWNER: SHANDONG TIANYUE ADVANCED MATERIALS TECHNOLOGY CO., LTD. Effective date: 20130927 |
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Free format text: CORRECT: ADDRESS; FROM: 250000 JINAN, SHANDONG PROVINCE TO: 250118 JINAN, SHANDONG PROVINCE |
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Effective date of registration: 20130927 Address after: Huaiyin District of Ji'nan City, Shandong Province, 250118 US 1929 miles Patentee after: Shandong Tianyue Crystal Material Co., Ltd. Address before: High tech Zone new Lok Road 250000 Ji'nan City, Shandong Province silver bearing building C block 3 layer Patentee before: Shandong Tianyue Advanced Material Technology Co., Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Graphite crucible used for growing silicon carbide crystal bar Effective date of registration: 20140627 Granted publication date: 20120919 Pledgee: Agricultural Bank of China Limited by Share Ltd Ji'nan Licheng branch Pledgor: Shandong Tianyue Crystal Material Co., Ltd. Registration number: 2014990000523 |
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Date of cancellation: 20150901 Granted publication date: 20120919 Pledgee: Agricultural Bank of China Limited by Share Ltd Ji'nan Licheng branch Pledgor: Shandong Tianyue Crystal Material Co., Ltd. Registration number: 2014990000523 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Graphite crucible used for growing silicon carbide crystal bar Effective date of registration: 20150908 Granted publication date: 20120919 Pledgee: Agricultural Bank of China Limited by Share Ltd Ji'nan Licheng branch Pledgor: Shandong days Yue crystal materials Co. Ltd.|Shandong Tian Yue advanced Mstar Technology Ltd Registration number: 2015990000764 |
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Date of cancellation: 20180615 Granted publication date: 20120919 Pledgee: Agricultural Bank of China Limited by Share Ltd Ji'nan Licheng branch Pledgor: Shandong Tianyue Crystal Material Co., Ltd.|Shandong Tianyue Advanced Material Technology Co., Ltd. Registration number: 2015990000764 |
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Effective date of registration: 20190327 Address after: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee after: Shandong Tianyue Advanced Material Technology Co., Ltd. Address before: 250118 Meili Road, Huaiyin District, Jinan City, Shandong Province, 1929 Patentee before: Shandong Tianyue Crystal Material Co., Ltd. |
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Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |
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