CN106367812A - 一种提高碳化硅粉源径向温度均匀性的石墨坩埚 - Google Patents
一种提高碳化硅粉源径向温度均匀性的石墨坩埚 Download PDFInfo
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- CN106367812A CN106367812A CN201610920976.XA CN201610920976A CN106367812A CN 106367812 A CN106367812 A CN 106367812A CN 201610920976 A CN201610920976 A CN 201610920976A CN 106367812 A CN106367812 A CN 106367812A
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- graphite crucible
- graphite
- cuvette
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- silicon carbide
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
石墨坩埚种类 | 无石墨槽 | 带石墨槽 |
碳化硅晶体厚度 | 23mm | 30mm |
Claims (6)
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CN201610920976.XA CN106367812A (zh) | 2016-10-21 | 2016-10-21 | 一种提高碳化硅粉源径向温度均匀性的石墨坩埚 |
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CN201610920976.XA CN106367812A (zh) | 2016-10-21 | 2016-10-21 | 一种提高碳化硅粉源径向温度均匀性的石墨坩埚 |
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CN201610920976.XA Pending CN106367812A (zh) | 2016-10-21 | 2016-10-21 | 一种提高碳化硅粉源径向温度均匀性的石墨坩埚 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107059130A (zh) * | 2017-04-20 | 2017-08-18 | 山东大学 | 一种减少碳化硅单晶中包裹体的新型坩埚及利用坩埚生长单晶的方法 |
CN113046826A (zh) * | 2021-03-15 | 2021-06-29 | 哈尔滨化兴软控科技有限公司 | 一种可提高原料利用率的装置及方法 |
CN113073384A (zh) * | 2021-03-26 | 2021-07-06 | 赵丽丽 | 一种可有效减少SiC单晶缺陷的方法及装置 |
CN113981529A (zh) * | 2020-07-27 | 2022-01-28 | 环球晶圆股份有限公司 | 碳化硅晶碇的制造方法 |
CN115537929A (zh) * | 2022-12-06 | 2022-12-30 | 浙江晶越半导体有限公司 | 一种用于气相升华法生长氮化铝的晶体生长装置 |
CN115584552A (zh) * | 2022-11-03 | 2023-01-10 | 安徽微芯长江半导体材料有限公司 | 一种碳化硅晶体生长装置 |
CN116555898A (zh) * | 2022-07-01 | 2023-08-08 | 浙江晶越半导体有限公司 | 一种高粉源利用率pvt法生长碳化硅坩埚结构及其生长方法 |
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JP2001072491A (ja) * | 1999-08-31 | 2001-03-21 | Agency Of Ind Science & Technol | 単結晶の製造方法およびその装置 |
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CN203546203U (zh) * | 2013-11-27 | 2014-04-16 | 河北同光晶体有限公司 | 一种用于生长SiC晶体的坩埚 |
CN203613305U (zh) * | 2013-11-27 | 2014-05-28 | 河北同光晶体有限公司 | 一种碳化硅单晶的生产装置 |
US20140230721A1 (en) * | 2011-08-25 | 2014-08-21 | Lg Innotek Co., Ltd. | Apparatus for fabricating ingot, method for providing material, and method for fabricating ingot |
US20150132486A1 (en) * | 2013-11-12 | 2015-05-14 | Chung-Shan Institute of Science and Technology, Armaments Bureau, Ministry of National Defence | Vapor deposition apparatus and method using the same |
CN204570085U (zh) * | 2015-05-05 | 2015-08-19 | 山东天岳先进材料科技有限公司 | 一种快速生长无包裹物碳化硅单晶的生长室 |
CN105543965A (zh) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | 一种碳化硅单晶生长用坩埚结构 |
CN206204480U (zh) * | 2016-10-21 | 2017-05-31 | 珠海鼎泰芯源晶体有限公司 | 一种提高碳化硅粉源径向温度均匀性的石墨坩埚 |
-
2016
- 2016-10-21 CN CN201610920976.XA patent/CN106367812A/zh active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001072491A (ja) * | 1999-08-31 | 2001-03-21 | Agency Of Ind Science & Technol | 単結晶の製造方法およびその装置 |
US20140230721A1 (en) * | 2011-08-25 | 2014-08-21 | Lg Innotek Co., Ltd. | Apparatus for fabricating ingot, method for providing material, and method for fabricating ingot |
CN202440568U (zh) * | 2012-01-17 | 2012-09-19 | 山东天岳先进材料科技有限公司 | 一种用于生长碳化硅晶棒的石墨坩埚 |
US20150132486A1 (en) * | 2013-11-12 | 2015-05-14 | Chung-Shan Institute of Science and Technology, Armaments Bureau, Ministry of National Defence | Vapor deposition apparatus and method using the same |
CN203546203U (zh) * | 2013-11-27 | 2014-04-16 | 河北同光晶体有限公司 | 一种用于生长SiC晶体的坩埚 |
CN203613305U (zh) * | 2013-11-27 | 2014-05-28 | 河北同光晶体有限公司 | 一种碳化硅单晶的生产装置 |
CN204570085U (zh) * | 2015-05-05 | 2015-08-19 | 山东天岳先进材料科技有限公司 | 一种快速生长无包裹物碳化硅单晶的生长室 |
CN105543965A (zh) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | 一种碳化硅单晶生长用坩埚结构 |
CN206204480U (zh) * | 2016-10-21 | 2017-05-31 | 珠海鼎泰芯源晶体有限公司 | 一种提高碳化硅粉源径向温度均匀性的石墨坩埚 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107059130A (zh) * | 2017-04-20 | 2017-08-18 | 山东大学 | 一种减少碳化硅单晶中包裹体的新型坩埚及利用坩埚生长单晶的方法 |
CN113981529A (zh) * | 2020-07-27 | 2022-01-28 | 环球晶圆股份有限公司 | 碳化硅晶碇的制造方法 |
CN113046826A (zh) * | 2021-03-15 | 2021-06-29 | 哈尔滨化兴软控科技有限公司 | 一种可提高原料利用率的装置及方法 |
CN113073384A (zh) * | 2021-03-26 | 2021-07-06 | 赵丽丽 | 一种可有效减少SiC单晶缺陷的方法及装置 |
CN116555898A (zh) * | 2022-07-01 | 2023-08-08 | 浙江晶越半导体有限公司 | 一种高粉源利用率pvt法生长碳化硅坩埚结构及其生长方法 |
CN115584552A (zh) * | 2022-11-03 | 2023-01-10 | 安徽微芯长江半导体材料有限公司 | 一种碳化硅晶体生长装置 |
CN115537929A (zh) * | 2022-12-06 | 2022-12-30 | 浙江晶越半导体有限公司 | 一种用于气相升华法生长氮化铝的晶体生长装置 |
CN115537929B (zh) * | 2022-12-06 | 2023-03-10 | 浙江晶越半导体有限公司 | 一种用于气相升华法生长氮化铝的晶体生长装置 |
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TA01 | Transfer of patent application right | ||
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Effective date of registration: 20170411 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant after: Zhuhai Ding Tai Xinyuan crystal Ltd Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant before: Beijing Ding Tai Xinyuan Technology Development Co. Ltd. |
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Effective date of registration: 20170804 Address after: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant after: Beijing Ding Tai Xinyuan Technology Development Co. Ltd. Address before: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant before: Zhuhai Ding Tai Xinyuan crystal Ltd |
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Effective date of registration: 20170817 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant after: Zhuhai Ding Tai Xinyuan crystal Ltd Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant before: Beijing Ding Tai Xinyuan Technology Development Co. Ltd. |
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Application publication date: 20170201 |