CN204417640U - 提高晶体生长速度的坩埚及晶体生长装置 - Google Patents
提高晶体生长速度的坩埚及晶体生长装置 Download PDFInfo
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108130593A (zh) * | 2017-12-20 | 2018-06-08 | 中国科学院上海硅酸盐研究所 | 一种晶体生长炉用保温装置 |
CN109518276A (zh) * | 2018-11-02 | 2019-03-26 | 山东天岳先进材料科技有限公司 | 一种高品质碳化硅晶体的制备方法及其装置 |
CN111286785A (zh) * | 2018-12-07 | 2020-06-16 | 昭和电工株式会社 | 晶体生长装置以及坩埚 |
CN112708932A (zh) * | 2020-12-21 | 2021-04-27 | 徐州鑫晶半导体科技有限公司 | 单晶炉的石墨坩埚及其制造方法、坩埚组件和单晶炉 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108130593A (zh) * | 2017-12-20 | 2018-06-08 | 中国科学院上海硅酸盐研究所 | 一种晶体生长炉用保温装置 |
CN109518276A (zh) * | 2018-11-02 | 2019-03-26 | 山东天岳先进材料科技有限公司 | 一种高品质碳化硅晶体的制备方法及其装置 |
CN111286785A (zh) * | 2018-12-07 | 2020-06-16 | 昭和电工株式会社 | 晶体生长装置以及坩埚 |
US11453957B2 (en) | 2018-12-07 | 2022-09-27 | Showa Denko K.K. | Crystal growing apparatus and crucible having a main body portion and a first portion having a radiation rate different from that of the main body portion |
CN112708932A (zh) * | 2020-12-21 | 2021-04-27 | 徐州鑫晶半导体科技有限公司 | 单晶炉的石墨坩埚及其制造方法、坩埚组件和单晶炉 |
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Address after: 071066 No. 6001, North Third Ring Road, Baoding City, Hebei Province Patentee after: Hebei Tongguang Semiconductor Co.,Ltd. Address before: 071051 room A007, 4th floor, block B, building 6, University Science Park, 5699 Second Ring Road, Baoding City, Hebei Province Patentee before: HEBEI TONGGUANG CRYSTAL Co.,Ltd. |