CN106381525B - 一种基于VGF法的减少InP晶体孪晶的装置 - Google Patents
一种基于VGF法的减少InP晶体孪晶的装置 Download PDFInfo
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- CN106381525B CN106381525B CN201610937760.4A CN201610937760A CN106381525B CN 106381525 B CN106381525 B CN 106381525B CN 201610937760 A CN201610937760 A CN 201610937760A CN 106381525 B CN106381525 B CN 106381525B
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN201610937760.4A CN106381525B (zh) | 2016-10-25 | 2016-10-25 | 一种基于VGF法的减少InP晶体孪晶的装置 |
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Families Citing this family (10)
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CN107268068B (zh) * | 2017-06-09 | 2018-07-06 | 厦门中烁光电科技有限公司 | 利用全封闭式坩埚制备溴化镧晶体的方法 |
CN107434244A (zh) * | 2017-09-13 | 2017-12-05 | 南京金美镓业有限公司 | 一种磷化铟合成装置的复合热屏蔽结构 |
CN109280964B (zh) * | 2018-10-16 | 2019-12-17 | 山东天岳先进材料科技有限公司 | 一种生长碳化硅单晶的热场结构 |
KR102331308B1 (ko) * | 2018-10-16 | 2021-11-24 | 에스아이씨씨 컴퍼니 리미티드 | 큰사이즈 고순도 탄화규소 단결정, 기판 및 그 제조 방법과 제조용 장치 |
WO2020118998A1 (zh) * | 2018-12-14 | 2020-06-18 | 中国电子科技集团公司第十三研究所 | 一种制备高成品率晶体的生长方法及装置 |
CN109487329B (zh) * | 2018-12-14 | 2020-02-18 | 中国电子科技集团公司第十三研究所 | 一种制备高成品率晶体的生长方法 |
CN110484968A (zh) * | 2019-09-30 | 2019-11-22 | 山西中科晶电信息材料有限公司 | 一种设置有炉体升降机构的晶体生长炉 |
CN110512274A (zh) * | 2019-09-30 | 2019-11-29 | 山西中科晶电信息材料有限公司 | 一种基于VGF法的减少GaAs晶体孪晶的装置 |
CN113403689A (zh) * | 2020-10-26 | 2021-09-17 | 昆明物理研究所 | 一种低缺陷碲锌镉晶体的制备方法和装置 |
TWI833617B (zh) * | 2023-03-24 | 2024-02-21 | 國立勤益科技大學 | 晶體生長裝置 |
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KR100246712B1 (ko) * | 1994-06-02 | 2000-03-15 | 구마모토 마사히로 | 화합물 단결정의 제조방법 및 제조장치 |
JP2011026176A (ja) * | 2009-07-28 | 2011-02-10 | Sumitomo Electric Ind Ltd | Iii−v族化合物結晶の製造方法 |
CN102485978A (zh) * | 2010-12-02 | 2012-06-06 | 元亮科技有限公司 | 一种可以调节炉膛温度梯度的保温桶 |
CN102286774A (zh) * | 2011-06-15 | 2011-12-21 | 安阳市凤凰光伏科技有限公司 | 铸造法生产类似单晶硅锭热场梯度改进装置 |
CN104372398A (zh) * | 2013-08-14 | 2015-02-25 | 台山市华兴光电科技有限公司 | 一种磷化铟生长的压力罐 |
CN104695013A (zh) * | 2013-12-04 | 2015-06-10 | 青岛润鑫伟业科贸有限公司 | 一种磷化铟多晶无液封合成装置 |
CN104911690B (zh) * | 2015-07-01 | 2017-09-19 | 清远先导材料有限公司 | 一种磷化铟单晶的生长方法及生长装置 |
CN105088332A (zh) * | 2015-09-02 | 2015-11-25 | 哈尔滨奥瑞德光电技术有限公司 | 生长大尺寸蓝宝石的单晶炉改进结构 |
CN206204482U (zh) * | 2016-10-25 | 2017-05-31 | 珠海鼎泰芯源晶体有限公司 | 一种基于VGF法的减少InP晶体孪晶的装置 |
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Effective date of registration: 20170817 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant after: ZHUHAI DINGTAI XINYUAN CRYSTAL CO.,LTD. Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant before: BEIJING DINGTAI XINYUAN TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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Denomination of invention: A device based on VGF method to reduce InP crystal twinning Granted publication date: 20190621 Pledgee: Hengqin Financial Investment International Finance Leasing Co.,Ltd. Pledgor: ZHUHAI DINGTAI XINYUAN CRYSTAL CO.,LTD. Registration number: Y2024980025500 |