CN202430332U - 一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚 - Google Patents

一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚 Download PDF

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CN202430332U
CN202430332U CN2012200207836U CN201220020783U CN202430332U CN 202430332 U CN202430332 U CN 202430332U CN 2012200207836 U CN2012200207836 U CN 2012200207836U CN 201220020783 U CN201220020783 U CN 201220020783U CN 202430332 U CN202430332 U CN 202430332U
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silicon carbide
porous graphite
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crystal silicon
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高玉强
胡小波
郝霄鹏
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Shandong Tianyue Advanced Technology Co Ltd
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SICC Science and Technology Co Ltd
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Abstract

本实用新型涉及一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚，包括收容碳化硅原料的坩埚桶和上盖，在所述坩埚桶的内壁上部和上盖的外壁上设置有相互旋合的螺纹，所述上盖和坩埚桶通过螺纹连接；在所述的坩埚桶内壁上设置有放置多孔石墨板的定位块；在定位块上放置有多孔石墨板，所述多孔石墨板的外径与坩埚桶的内径相适应。本实用新型有效的避免了生长过程中碳化硅原料的碳化对晶体生长造成的影响，提高晶体生长的稳定性和成功率。

Description

一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚
技术领域
本实用新型涉及一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚，属于单晶生长技术领域。 
背景技术
碳化硅(SiC)单晶材料是第三代宽带隙半导体材料的代表，具有宽禁带、高热导率、高电子饱和迁移速率、高击穿电场等性质，与以硅为代表的第一代半导体材料和以GaAs为代表的第二代半导体材料相比，有着明显的优越性，被认为是制造光电子器件、高频大功率器件和高温电子器件等理想的半导体材料。在白光照明、光存储、屏幕显示、航天航空、高温辐射环境、石油勘探、自动化、雷达与通信、汽车电子化以及电力电子等方面有广泛应用。 
碳化硅单晶材料的生长比较困难，根据理论分析，若从化学计量比熔体中采用提拉法生长SiC单晶，条件十分苛刻，因为SiC同成分共熔点只有在温度＞3200℃、压力超过105atm(1atm约为105pa)条件下才有可能，因此难以实现。目前普遍采用物理气相沉积法(也叫升华法或改进的Lely法)，这种生长方法是由前苏联科学家Tairov和Tsvetkov于1978年在Lely法的基础上提出的，其优点在于：采用SiC籽晶控制所生长晶体的构型，克服了Lely法自发成核生长的缺点，可得到单一构型的SiC单晶；可生长大尺寸的碳化硅单晶；生长压力在一个大气压(1atm)以内，生长温度在2000℃-2500℃之间，远低于熔体生长所需的压力和温度。目前碳化硅单晶生长的主要采用物理气相沉积法。物理气相沉积法一般采用中频感应加热方式，坩埚采用石墨材料，在真空下或惰性气体气氛保护下进行单晶生长。碳化硅单晶生长要求条件非常苛刻，需要稳定的温场和气体组分环境，但是由于碳化硅原料分解过程中碳会以固体颗粒的形式留在坩埚内，使坩埚内温场不断变化，因此坩埚的设计对于碳化硅单晶生长尤其重要。 
实用新型内容
针对现有技术的不足，本实用新型提供一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚，该坩埚不但避免了碳化硅原料碳化对晶体生长所造成的影响，而且提高了晶体生长的稳定性和成功率。 
本实用新型的技术方案如下： 
一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚，包括收容碳化硅原料的坩埚桶和上盖，在所述坩埚桶的内壁上部和上盖的外壁上设置有相互旋合的螺纹，所述上盖和坩埚桶通过所述的螺纹连接；在所述的坩埚桶内壁上设置有放置多孔石墨板的定位块；在定位块上放置有多孔石墨板，所述多孔石墨板的外径与坩埚桶的内径相适应。 
所述坩埚桶和上盖的材质为高密度石墨。 
所述多孔石墨板的材质为低密度多孔石墨。 
所述的定位块沿坩埚桶的内壁一周设置，呈圆环状。 
所述的定位块包括沿坩埚桶的内壁一周设置的多个凸起挡块。 
本实用新型的石墨坩埚用于物理气相沉积法制备大尺寸碳化硅单晶。特别是直径在2英寸以上的碳化硅单晶。为高温半导体材料的研发和应用提供了重要的晶体材料基础。 
所述物理气相沉积法制备碳化硅单晶的工艺按现有技术。 
本实用新型所述石墨坩埚生产碳化硅单晶的方法，包括向坩埚桶内加入碳化硅原料，在所述的定位块上安装上多孔石墨板，在上盖底面设置籽晶底座和籽晶，将上盖通过螺纹与坩埚桶连接盖好，利用物理气相沉积法制备碳化硅单晶。所述籽晶底座通过碳胶粘接在坩埚上盖底面上，在籽晶底座上设置籽晶。 
本实用新型的技术特点及优良效果： 
1、本实用新型特别设置了多孔石墨板，多孔石墨板为单晶生长界面提供稳定的辐射环境，使得生长中的单晶界面不受原料不断碳化的影响，提高了晶体生长的稳定性和成功率。 
2、本实用新型的多孔石墨板的材质为低密度多孔石墨，不对气氛的通过形成阻碍。根据文献报道(Drowart，G.D.Maria，M.G.Inghram. Thermodynamic study of SiC utilizinga 
mass spectrometer[J].The Journal of Chemical Physics，1958，29：1015-1021.)，碳化硅粉料在温度大于1800℃时发生分解-升华反应，其中Si(g)、SiC2(g)和Si2C(g)为主要气相组分，气相分子可以自由通过低密度多孔石墨中的空隙，由于生长条件控制在近平衡状态下，生长腔内温度场比较均匀，这些组分的总Si/C不会偏离平衡态太远，因此气相组分对多孔石墨的腐蚀作用也很小，因此所述低密度多孔石墨不会对气氛的通过形成阻碍。 
3、利用本实用新型的石墨坩埚按现有物理气相沉积法制备生长碳化硅单晶时，所得产品晶型稳定率比利用常规坩埚的晶型稳定率提高40％以上，数值模拟生长界面的温度梯度和单晶界面凸率明显降低，温场均匀。可显著提高碳化硅单晶生长的稳定性和成功率，降低了生产成本。本实用新型的石墨坩埚有利于大尺寸碳化硅单晶的工业化生产。 
4、本实用新型的石墨坩埚形状规整，加工容易。 
附图说明
图1是本实用新型的结构示意图； 
其中：1、坩埚桶，2、上盖，3、籽晶底座，4、籽晶，5、碳化硅原料，6、定位块，7、多孔石墨板。 
具体实施方式
下面结合说明书附图和实施例对本实用新型做详细的说明，但不限于此。 
实施例1、 
如图1所示。一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚，包括收容碳化硅原料的坩埚桶1和上盖2，在所述坩埚桶1的内壁上部和上盖2的外壁上设置有相互旋合的螺纹，所述上盖2和坩埚桶1通过螺纹连接；在所述的坩埚桶1内壁上设置有放置多孔石墨 板的定位块6，所述的定位块6沿坩埚桶的内壁一周设置，呈圆环状；在定位块6上放置有多孔石墨板7，所述多孔石墨板7的外径与坩埚桶1的内径应适应；所述坩埚桶1和上盖2的材质为高密度石墨，所述多孔石墨板7的材质为低密度多孔石墨。 
实施例2、如实施例1所述的石墨坩埚，其不同点在于： 
所述的定位块6包括沿坩埚桶的内壁一周设置的多个凸起挡块。 

Claims (5)

1.一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚，包括收容碳化硅原料的坩埚桶和上盖，在所述坩埚桶的内壁上部和上盖的外壁上设置有相互旋合的螺纹，所述上盖和坩埚桶通过所述的螺纹连接；其特征在于，在所述的坩埚桶内壁上设置有放置多孔石墨板的定位块；在定位块上放置有多孔石墨板，所述多孔石墨板的外径与坩埚桶的内径相适应。
2.根据权利要求1所述的一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚，其特征在于，所述坩埚桶和上盖的材质为高密度石墨。
3.根据权利要求1所述的一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚，其特征在于，所述多孔石墨板的材质为低密度多孔石墨。
4.根据权利要求1所述的一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚，其特征在于，所述的定位块沿坩埚桶的内壁一周设置，呈圆环状。
5.根据权利要求1所述的一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚，其特征在于，所述的定位块包括沿坩埚桶的内壁一周设置的多个凸起挡块。
CN2012200207836U 2012-01-17 2012-01-17 一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚 Expired - Lifetime CN202430332U (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102534763A (zh) * 2012-01-17 2012-07-04 山东天岳先进材料科技有限公司 一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚及其应用
WO2017113368A1 (zh) * 2015-12-29 2017-07-06 中国科学院上海硅酸盐研究所 一种碳化硅晶体生长用坩埚

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102534763A (zh) * 2012-01-17 2012-07-04 山东天岳先进材料科技有限公司 一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚及其应用
WO2017113368A1 (zh) * 2015-12-29 2017-07-06 中国科学院上海硅酸盐研究所 一种碳化硅晶体生长用坩埚

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