KR102266585B1 - 벌크 탄화규소를 제조하기 위한 방법 - Google Patents

벌크 탄화규소를 제조하기 위한 방법 Download PDF

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KR102266585B1
KR102266585B1 KR1020167008933A KR20167008933A KR102266585B1 KR 102266585 B1 KR102266585 B1 KR 102266585B1 KR 1020167008933 A KR1020167008933 A KR 1020167008933A KR 20167008933 A KR20167008933 A KR 20167008933A KR 102266585 B1 KR102266585 B1 KR 102266585B1
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silicon carbide
seed
crucible
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KR20160050086A (ko
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로먼 브이. 드라체브
빠르티싸르티 산타나라가반
안드리히 엠. 안드루크히브
데이비드 에스. 리틀
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지티에이티 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020167008933A 2013-09-06 2014-09-05 벌크 탄화규소를 제조하기 위한 방법 Active KR102266585B1 (ko)

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US201361874597P 2013-09-06 2013-09-06
US61/874,597 2013-09-06
PCT/US2014/054255 WO2015035140A1 (en) 2013-09-06 2014-09-05 Method for producing bulk silicon carbide

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KR20160050086A KR20160050086A (ko) 2016-05-10
KR102266585B1 true KR102266585B1 (ko) 2021-06-18

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US (2) US10801126B2 (enExample)
JP (1) JP6487446B2 (enExample)
KR (1) KR102266585B1 (enExample)
CN (2) CN110670124B (enExample)
DE (1) DE112014004096T5 (enExample)
TW (2) TWI690627B (enExample)
WO (1) WO2015035140A1 (enExample)

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CN109402731B (zh) * 2018-10-17 2021-01-15 福建北电新材料科技有限公司 一种高纯半绝缘碳化硅晶体生长装置及其方法
JP2020189756A (ja) * 2019-05-17 2020-11-26 信越半導体株式会社 結晶成長装置及び結晶成長方法
EP3760766B1 (en) * 2019-07-03 2022-03-09 SiCrystal GmbH System for efficient manufacturing of a plurality of high-quality semiconductor single crystals, and method of manufacturing same
EP3760765B1 (en) * 2019-07-03 2022-03-16 SiCrystal GmbH System for horizontal growth of high-quality semiconductor single crystals, and method of manufacturing same
JP7434802B2 (ja) * 2019-10-30 2024-02-21 株式会社レゾナック 結晶成長装置及び結晶成長方法
CN112160025B (zh) * 2020-08-27 2021-07-16 露笑新能源技术有限公司 一种基于晶体炉的加热组件结构
US20220251725A1 (en) * 2021-02-09 2022-08-11 National Chung Shan Institute Of Science And Technology Method of growing on-axis silicon carbide single crystal by regulating silicon carbide source material in size
CN113652750B (zh) * 2021-08-18 2022-07-12 山东天岳先进科技股份有限公司 具有环形形貌的碳化硅晶体及其制备方法和制得的衬底
CN116716655B (zh) * 2023-06-14 2024-04-02 通威微电子有限公司 生长高质量碳化硅晶体的装置、方法及碳化硅晶体

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US20070283880A1 (en) 2005-03-24 2007-12-13 Tsvetkov Valeri F Apparatus and method for the production of bulk silicon carbide single crystals
WO2015035152A1 (en) 2013-09-06 2015-03-12 Gtat Corporation Method and apparatus for producing bulk silicon carbide using a silicon carbide seed

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WO2015035152A1 (en) 2013-09-06 2015-03-12 Gtat Corporation Method and apparatus for producing bulk silicon carbide using a silicon carbide seed

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CN105518187B (zh) 2019-11-08
TWI654346B (zh) 2019-03-21
US20210032770A1 (en) 2021-02-04
WO2015035140A1 (en) 2015-03-12
CN105518187A (zh) 2016-04-20
US20150068445A1 (en) 2015-03-12
US10801126B2 (en) 2020-10-13
JP2016531836A (ja) 2016-10-13
US11505876B2 (en) 2022-11-22
DE112014004096T5 (de) 2016-06-23
TW201920784A (zh) 2019-06-01
TW201522726A (zh) 2015-06-16
CN110670124A (zh) 2020-01-10
JP6487446B2 (ja) 2019-03-20
KR20160050086A (ko) 2016-05-10
CN110670124B (zh) 2021-07-30
TWI690627B (zh) 2020-04-11

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