JP2016532630A5 - - Google Patents

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Publication number
JP2016532630A5
JP2016532630A5 JP2016540419A JP2016540419A JP2016532630A5 JP 2016532630 A5 JP2016532630 A5 JP 2016532630A5 JP 2016540419 A JP2016540419 A JP 2016540419A JP 2016540419 A JP2016540419 A JP 2016540419A JP 2016532630 A5 JP2016532630 A5 JP 2016532630A5
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JP
Japan
Prior art keywords
silicon carbide
crucible
seed
sublimation furnace
furnace
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JP2016540419A
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English (en)
Japanese (ja)
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JP2016532630A (ja
JP6535005B2 (ja
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Priority claimed from PCT/US2014/054293 external-priority patent/WO2015035163A1/en
Publication of JP2016532630A publication Critical patent/JP2016532630A/ja
Publication of JP2016532630A5 publication Critical patent/JP2016532630A5/ja
Application granted granted Critical
Publication of JP6535005B2 publication Critical patent/JP6535005B2/ja
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JP2016540419A 2013-09-06 2014-09-05 バルクの炭化ケイ素を製造するための装置 Active JP6535005B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361874633P 2013-09-06 2013-09-06
US61/874,633 2013-09-06
PCT/US2014/054293 WO2015035163A1 (en) 2013-09-06 2014-09-05 Apparatus for producing bulk silicon carbide

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019101117A Division JP6712759B2 (ja) 2013-09-06 2019-05-30 バルクの炭化ケイ素を製造するための装置

Publications (3)

Publication Number Publication Date
JP2016532630A JP2016532630A (ja) 2016-10-20
JP2016532630A5 true JP2016532630A5 (enExample) 2017-10-19
JP6535005B2 JP6535005B2 (ja) 2019-06-26

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ID=52624265

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016540419A Active JP6535005B2 (ja) 2013-09-06 2014-09-05 バルクの炭化ケイ素を製造するための装置
JP2019101117A Active JP6712759B2 (ja) 2013-09-06 2019-05-30 バルクの炭化ケイ素を製造するための装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019101117A Active JP6712759B2 (ja) 2013-09-06 2019-05-30 バルクの炭化ケイ素を製造するための装置

Country Status (7)

Country Link
US (2) US10851473B2 (enExample)
JP (2) JP6535005B2 (enExample)
KR (1) KR102245508B1 (enExample)
CN (2) CN110878430B (enExample)
DE (1) DE112014004073T5 (enExample)
TW (3) TWI721452B (enExample)
WO (1) WO2015035163A1 (enExample)

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KR102245506B1 (ko) * 2013-09-06 2021-04-28 지티에이티 코포레이션 탄화규소 전구체로부터 벌크 탄화규소를 제조하기 위한 방법 및 장치
CN105174296B (zh) * 2015-05-22 2016-12-07 鸿福晶体科技(安徽)有限公司 一种氢氧化铝焙烧专用组合坩埚盖
US10142086B2 (en) 2015-06-11 2018-11-27 At&T Intellectual Property I, L.P. Repeater and methods for use therewith
CN105543966A (zh) * 2016-02-02 2016-05-04 北京华进创威电子有限公司 一种碳化硅单晶生长用复合保温结构
TW201807272A (zh) * 2016-08-26 2018-03-01 國家中山科學研究院 一種用於成長單晶晶體之裝置
CN108946735B (zh) * 2017-05-19 2022-11-11 新疆天科合达蓝光半导体有限公司 一种碳化硅晶体生长用大粒径碳化硅粉料的合成方法
EP3666933A4 (en) * 2018-10-16 2020-12-30 SICC Co., Ltd HIGH PURITY AND LARGE SIZE SILICON CARBIDE MONOCRISTAL, ASSOCIATED SUBSTRATE, PREPARATION PROCESS AND PREPARATION DEVICE
JP2023508691A (ja) 2019-12-27 2023-03-03 ウルフスピード インコーポレイテッド 大口径炭化ケイ素ウェハ
DE102020117661A1 (de) * 2020-07-03 2022-01-20 Friedrich-Alexander-Universität Erlangen-Nürnberg Kristallzüchtungsanlage zur Herstellung eines Einkristalls
US12125701B2 (en) * 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
TWI774523B (zh) 2021-08-19 2022-08-11 鴻海精密工業股份有限公司 單晶成長的方法
CN114990690B (zh) * 2022-06-30 2024-02-27 武汉大学 一种用于气相升华法制备碳化硅单晶的坩埚装置

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JPH06316499A (ja) 1993-04-30 1994-11-15 Sharp Corp 炭化珪素単結晶の製造方法
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
JP2001063020A (ja) 1999-08-26 2001-03-13 Ricoh Co Ltd インクジェット記録装置
JP4450118B2 (ja) * 1999-10-15 2010-04-14 株式会社デンソー 炭化珪素単結晶の製造方法
US6451112B1 (en) * 1999-10-15 2002-09-17 Denso Corporation Method and apparatus for fabricating high quality single crystal
JP4880164B2 (ja) 2000-02-15 2012-02-22 ザ フォックス グループ，インコーポレイティド 低欠陥密度炭化ケイ素材料
JP4275308B2 (ja) * 2000-12-28 2009-06-10 株式会社デンソー 炭化珪素単結晶の製造方法およびその製造装置
US6863728B2 (en) * 2001-02-14 2005-03-08 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
EP1471168B2 (en) * 2003-04-24 2011-08-10 Norstel AB Device and method for producing single crystals by vapour deposition
US7323052B2 (en) * 2005-03-24 2008-01-29 Cree, Inc. Apparatus and method for the production of bulk silicon carbide single crystals
JP2007314358A (ja) * 2006-05-23 2007-12-06 Bridgestone Corp 炭化ケイ素単結晶の製造装置及びその製造方法
US20090314198A1 (en) * 2006-06-23 2009-12-24 Rec Scanwafer As Device and method for production of semiconductor grade silicon
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WO2011065060A1 (ja) * 2009-11-30 2011-06-03 住友電気工業株式会社 単結晶の製造方法
JP5346821B2 (ja) * 2010-01-15 2013-11-20 株式会社ブリヂストン 炭化ケイ素単結晶の製造装置
JP5143159B2 (ja) * 2010-02-18 2013-02-13 三菱電機株式会社 単結晶の製造装置
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US9738991B2 (en) * 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion

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