JP6535005B2 - バルクの炭化ケイ素を製造するための装置 - Google Patents

バルクの炭化ケイ素を製造するための装置 Download PDF

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JP6535005B2
JP6535005B2 JP2016540419A JP2016540419A JP6535005B2 JP 6535005 B2 JP6535005 B2 JP 6535005B2 JP 2016540419 A JP2016540419 A JP 2016540419A JP 2016540419 A JP2016540419 A JP 2016540419A JP 6535005 B2 JP6535005 B2 JP 6535005B2
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silicon carbide
seed
crucible
precursor
silicon
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JP2016532630A5 (enExample
JP2016532630A (ja
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ローマン ヴィー． ドラチェフ，
ローマン ヴィー． ドラチェフ，
パルタサラティ サンタナラガヴァン，
パルタサラティ サンタナラガヴァン，
アンドリー エム． アンドルキヴ，
アンドリー エム． アンドルキヴ，
デイヴィッド エス． ライトル，
デイヴィッド エス． ライトル，
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GTAT Corp
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GTAT Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2016540419A 2013-09-06 2014-09-05 バルクの炭化ケイ素を製造するための装置 Active JP6535005B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361874633P 2013-09-06 2013-09-06
US61/874,633 2013-09-06
PCT/US2014/054293 WO2015035163A1 (en) 2013-09-06 2014-09-05 Apparatus for producing bulk silicon carbide

Related Child Applications (1)

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JP2019101117A Division JP6712759B2 (ja) 2013-09-06 2019-05-30 バルクの炭化ケイ素を製造するための装置

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JP2016532630A JP2016532630A (ja) 2016-10-20
JP2016532630A5 JP2016532630A5 (enExample) 2017-10-19
JP6535005B2 true JP6535005B2 (ja) 2019-06-26

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JP2016540419A Active JP6535005B2 (ja) 2013-09-06 2014-09-05 バルクの炭化ケイ素を製造するための装置
JP2019101117A Active JP6712759B2 (ja) 2013-09-06 2019-05-30 バルクの炭化ケイ素を製造するための装置

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US (2) US10851473B2 (enExample)
JP (2) JP6535005B2 (enExample)
KR (1) KR102245508B1 (enExample)
CN (2) CN110878430B (enExample)
DE (1) DE112014004073T5 (enExample)
TW (3) TWI721452B (enExample)
WO (1) WO2015035163A1 (enExample)

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KR102245506B1 (ko) * 2013-09-06 2021-04-28 지티에이티 코포레이션 탄화규소 전구체로부터 벌크 탄화규소를 제조하기 위한 방법 및 장치
CN105174296B (zh) * 2015-05-22 2016-12-07 鸿福晶体科技(安徽)有限公司 一种氢氧化铝焙烧专用组合坩埚盖
US10142086B2 (en) 2015-06-11 2018-11-27 At&T Intellectual Property I, L.P. Repeater and methods for use therewith
CN105543966A (zh) * 2016-02-02 2016-05-04 北京华进创威电子有限公司 一种碳化硅单晶生长用复合保温结构
TW201807272A (zh) * 2016-08-26 2018-03-01 國家中山科學研究院 一種用於成長單晶晶體之裝置
CN108946735B (zh) * 2017-05-19 2022-11-11 新疆天科合达蓝光半导体有限公司 一种碳化硅晶体生长用大粒径碳化硅粉料的合成方法
EP3666933A4 (en) * 2018-10-16 2020-12-30 SICC Co., Ltd HIGH PURITY AND LARGE SIZE SILICON CARBIDE MONOCRISTAL, ASSOCIATED SUBSTRATE, PREPARATION PROCESS AND PREPARATION DEVICE
JP2023508691A (ja) 2019-12-27 2023-03-03 ウルフスピード インコーポレイテッド 大口径炭化ケイ素ウェハ
DE102020117661A1 (de) * 2020-07-03 2022-01-20 Friedrich-Alexander-Universität Erlangen-Nürnberg Kristallzüchtungsanlage zur Herstellung eines Einkristalls
US12125701B2 (en) * 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
TWI774523B (zh) 2021-08-19 2022-08-11 鴻海精密工業股份有限公司 單晶成長的方法
CN114990690B (zh) * 2022-06-30 2024-02-27 武汉大学 一种用于气相升华法制备碳化硅单晶的坩埚装置

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JPH06316499A (ja) 1993-04-30 1994-11-15 Sharp Corp 炭化珪素単結晶の製造方法
US5944890A (en) * 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
JP2001063020A (ja) 1999-08-26 2001-03-13 Ricoh Co Ltd インクジェット記録装置
JP4450118B2 (ja) * 1999-10-15 2010-04-14 株式会社デンソー 炭化珪素単結晶の製造方法
US6451112B1 (en) * 1999-10-15 2002-09-17 Denso Corporation Method and apparatus for fabricating high quality single crystal
JP4880164B2 (ja) 2000-02-15 2012-02-22 ザ フォックス グループ，インコーポレイティド 低欠陥密度炭化ケイ素材料
JP4275308B2 (ja) * 2000-12-28 2009-06-10 株式会社デンソー 炭化珪素単結晶の製造方法およびその製造装置
US6863728B2 (en) * 2001-02-14 2005-03-08 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
EP1471168B2 (en) * 2003-04-24 2011-08-10 Norstel AB Device and method for producing single crystals by vapour deposition
US7323052B2 (en) * 2005-03-24 2008-01-29 Cree, Inc. Apparatus and method for the production of bulk silicon carbide single crystals
JP2007314358A (ja) * 2006-05-23 2007-12-06 Bridgestone Corp 炭化ケイ素単結晶の製造装置及びその製造方法
US20090314198A1 (en) * 2006-06-23 2009-12-24 Rec Scanwafer As Device and method for production of semiconductor grade silicon
EP2074244A4 (en) * 2006-07-28 2011-11-23 Pronomic Industry Ab CRYSTALLINE GROWTH METHOD AND REACTOR MODEL
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JP5346821B2 (ja) * 2010-01-15 2013-11-20 株式会社ブリヂストン 炭化ケイ素単結晶の製造装置
JP5143159B2 (ja) * 2010-02-18 2013-02-13 三菱電機株式会社 単結晶の製造装置
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CN202643905U (zh) * 2012-04-28 2013-01-02 上海硅酸盐研究所中试基地 一种适用于PVT法生长SiC晶体系统的测温结构
US9738991B2 (en) * 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion

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TWI721452B (zh) 2021-03-11
US10851473B2 (en) 2020-12-01
CN110878430B (zh) 2021-10-22
TWI671443B (zh) 2019-09-11
TWI652381B (zh) 2019-03-01
KR102245508B1 (ko) 2021-04-28
CN105531405A (zh) 2016-04-27
TW201942425A (zh) 2019-11-01
JP6712759B2 (ja) 2020-06-24
WO2015035163A1 (en) 2015-03-12
JP2019163206A (ja) 2019-09-26
TW201923173A (zh) 2019-06-16
US20150068457A1 (en) 2015-03-12
TW201520385A (zh) 2015-06-01
US11591714B2 (en) 2023-02-28
JP2016532630A (ja) 2016-10-20
DE112014004073T5 (de) 2016-06-09
KR20160050087A (ko) 2016-05-10
CN110878430A (zh) 2020-03-13
US20210087706A1 (en) 2021-03-25
CN105531405B (zh) 2019-11-15

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