TWI671443B - 用來生產大塊矽碳化物的器具 - Google Patents
用來生產大塊矽碳化物的器具 Download PDFInfo
- Publication number
- TWI671443B TWI671443B TW108100546A TW108100546A TWI671443B TW I671443 B TWI671443 B TW I671443B TW 108100546 A TW108100546 A TW 108100546A TW 108100546 A TW108100546 A TW 108100546A TW I671443 B TWI671443 B TW I671443B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon carbide
- seed
- hot zone
- crucible
- item
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 207
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 206
- 239000002243 precursor Substances 0.000 claims abstract description 57
- 239000012212 insulator Substances 0.000 claims abstract description 25
- 239000013078 crystal Substances 0.000 claims description 76
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 59
- 239000010410 layer Substances 0.000 claims description 53
- 229910002804 graphite Inorganic materials 0.000 claims description 34
- 239000010439 graphite Substances 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052799 carbon Inorganic materials 0.000 claims description 25
- 239000007787 solid Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 239000008187 granular material Substances 0.000 claims description 6
- 239000012774 insulation material Substances 0.000 claims 2
- 239000011247 coating layer Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 34
- 238000000859 sublimation Methods 0.000 abstract description 29
- 230000008022 sublimation Effects 0.000 abstract description 29
- 238000010438 heat treatment Methods 0.000 abstract description 23
- 239000000463 material Substances 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 28
- 230000012010 growth Effects 0.000 description 25
- 239000000203 mixture Substances 0.000 description 23
- 235000014443 Pyrus communis Nutrition 0.000 description 22
- 230000007547 defect Effects 0.000 description 18
- 239000002245 particle Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000006698 induction Effects 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 239000011856 silicon-based particle Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- SEPPVOUBHWNCAW-FNORWQNLSA-N (E)-4-oxonon-2-enal Chemical compound CCCCCC(=O)\C=C\C=O SEPPVOUBHWNCAW-FNORWQNLSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- LLBZPESJRQGYMB-UHFFFAOYSA-N 4-one Natural products O1C(C(=O)CC)CC(C)C11C2(C)CCC(C3(C)C(C(C)(CO)C(OC4C(C(O)C(O)C(COC5C(C(O)C(O)CO5)OC5C(C(OC6C(C(O)C(O)C(CO)O6)O)C(O)C(CO)O5)OC5C(C(O)C(O)C(C)O5)O)O4)O)CC3)CC3)=C3C2(C)CC1 LLBZPESJRQGYMB-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008241 heterogeneous mixture Substances 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035040 seed growth Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361874633P | 2013-09-06 | 2013-09-06 | |
| US61/874,633 | 2013-09-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201923173A TW201923173A (zh) | 2019-06-16 |
| TWI671443B true TWI671443B (zh) | 2019-09-11 |
Family
ID=52624265
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108100546A TWI671443B (zh) | 2013-09-06 | 2014-09-09 | 用來生產大塊矽碳化物的器具 |
| TW103130961A TWI652381B (zh) | 2013-09-06 | 2014-09-09 | 用來生產大塊矽碳化物的器具 |
| TW108120706A TWI721452B (zh) | 2013-09-06 | 2014-09-09 | 用於透過昇華形成矽碳化物之方法及器具 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103130961A TWI652381B (zh) | 2013-09-06 | 2014-09-09 | 用來生產大塊矽碳化物的器具 |
| TW108120706A TWI721452B (zh) | 2013-09-06 | 2014-09-09 | 用於透過昇華形成矽碳化物之方法及器具 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10851473B2 (enExample) |
| JP (2) | JP6535005B2 (enExample) |
| KR (1) | KR102245508B1 (enExample) |
| CN (2) | CN105531405B (enExample) |
| DE (1) | DE112014004073T5 (enExample) |
| TW (3) | TWI671443B (enExample) |
| WO (1) | WO2015035163A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015035145A1 (en) * | 2013-09-06 | 2015-03-12 | Gtat Corporation | Method and apparatus for producing bulk silicon carbide from a silicon carbide precursor |
| CN105174296B (zh) * | 2015-05-22 | 2016-12-07 | 鸿福晶体科技(安徽)有限公司 | 一种氢氧化铝焙烧专用组合坩埚盖 |
| US10142086B2 (en) | 2015-06-11 | 2018-11-27 | At&T Intellectual Property I, L.P. | Repeater and methods for use therewith |
| CN105543966A (zh) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | 一种碳化硅单晶生长用复合保温结构 |
| TW201807272A (zh) * | 2016-08-26 | 2018-03-01 | 國家中山科學研究院 | 一種用於成長單晶晶體之裝置 |
| CN108946735B (zh) * | 2017-05-19 | 2022-11-11 | 新疆天科合达蓝光半导体有限公司 | 一种碳化硅晶体生长用大粒径碳化硅粉料的合成方法 |
| KR102331308B1 (ko) * | 2018-10-16 | 2021-11-24 | 에스아이씨씨 컴퍼니 리미티드 | 큰사이즈 고순도 탄화규소 단결정, 기판 및 그 제조 방법과 제조용 장치 |
| US12054850B2 (en) | 2019-12-27 | 2024-08-06 | Wolfspeed, Inc. | Large diameter silicon carbide wafers |
| DE102020117661A1 (de) * | 2020-07-03 | 2022-01-20 | Friedrich-Alexander-Universität Erlangen-Nürnberg | Kristallzüchtungsanlage zur Herstellung eines Einkristalls |
| US12125701B2 (en) * | 2020-12-15 | 2024-10-22 | Wolfspeed, Inc. | Large dimension silicon carbide single crystalline materials with reduced crystallographic stress |
| TWI774523B (zh) | 2021-08-19 | 2022-08-11 | 鴻海精密工業股份有限公司 | 單晶成長的方法 |
| CN114990690B (zh) * | 2022-06-30 | 2024-02-27 | 武汉大学 | 一种用于气相升华法制备碳化硅单晶的坩埚装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020083892A1 (en) * | 2000-12-28 | 2002-07-04 | Hiroyuki Kondo | Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal |
| US20120103249A1 (en) * | 2009-03-26 | 2012-05-03 | Ii-Vi Incorporated | Sic single crystal sublimation growth method and apparatus |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3216322B2 (ja) * | 1993-04-12 | 2001-10-09 | 住友金属鉱山株式会社 | 単結晶育成装置 |
| JPH06316499A (ja) * | 1993-04-30 | 1994-11-15 | Sharp Corp | 炭化珪素単結晶の製造方法 |
| US5944890A (en) * | 1996-03-29 | 1999-08-31 | Denso Corporation | Method of producing single crystals and a seed crystal used in the method |
| JP2001063020A (ja) | 1999-08-26 | 2001-03-13 | Ricoh Co Ltd | インクジェット記録装置 |
| JP4450118B2 (ja) * | 1999-10-15 | 2010-04-14 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
| US6451112B1 (en) * | 1999-10-15 | 2002-09-17 | Denso Corporation | Method and apparatus for fabricating high quality single crystal |
| US6428621B1 (en) * | 2000-02-15 | 2002-08-06 | The Fox Group, Inc. | Method for growing low defect density silicon carbide |
| US6863728B2 (en) * | 2001-02-14 | 2005-03-08 | The Fox Group, Inc. | Apparatus for growing low defect density silicon carbide |
| DE602004001802T3 (de) | 2003-04-24 | 2012-01-26 | Norstel Ab | Vorrichtung und Verfahren zur Herstellung von Einkristallen durch Dampfphasenabscheidung |
| US7323052B2 (en) * | 2005-03-24 | 2008-01-29 | Cree, Inc. | Apparatus and method for the production of bulk silicon carbide single crystals |
| JP2007314358A (ja) * | 2006-05-23 | 2007-12-06 | Bridgestone Corp | 炭化ケイ素単結晶の製造装置及びその製造方法 |
| WO2007148985A1 (en) * | 2006-06-23 | 2007-12-27 | Rec Scanwafer As | Device and method for production of semiconductor grade silicon |
| US8197596B2 (en) * | 2006-07-28 | 2012-06-12 | Pronomic Industry Ab | Crystal growth method and reactor design |
| CN101580964B (zh) * | 2008-05-12 | 2012-02-01 | 中国科学院物理研究所 | 一种用于生长高质量碳化硅晶体的籽晶托 |
| JP5102697B2 (ja) * | 2008-05-21 | 2012-12-19 | 株式会社ブリヂストン | 炭化珪素単結晶の製造方法 |
| JP2010095397A (ja) * | 2008-10-15 | 2010-04-30 | Nippon Steel Corp | 炭化珪素単結晶及び炭化珪素単結晶ウェハ |
| CN101985773B (zh) * | 2009-11-05 | 2013-12-18 | 新疆天科合达蓝光半导体有限公司 | 一种籽晶处理方法和生长碳化硅单晶的方法 |
| WO2011065060A1 (ja) * | 2009-11-30 | 2011-06-03 | 住友電気工業株式会社 | 単結晶の製造方法 |
| JP5346821B2 (ja) * | 2010-01-15 | 2013-11-20 | 株式会社ブリヂストン | 炭化ケイ素単結晶の製造装置 |
| JP5143159B2 (ja) * | 2010-02-18 | 2013-02-13 | 三菱電機株式会社 | 単結晶の製造装置 |
| JP2011184208A (ja) | 2010-03-04 | 2011-09-22 | Bridgestone Corp | 炭化ケイ素単結晶の製造装置及び炭化ケイ素単結晶の製造方法 |
| EP2402999A1 (en) | 2010-06-29 | 2012-01-04 | IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik | Semiconductor component, method of producing a semiconductor component, semiconductor device |
| CN202643905U (zh) * | 2012-04-28 | 2013-01-02 | 上海硅酸盐研究所中试基地 | 一种适用于PVT法生长SiC晶体系统的测温结构 |
| US9738991B2 (en) * | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
-
2014
- 2014-09-05 JP JP2016540419A patent/JP6535005B2/ja active Active
- 2014-09-05 DE DE112014004073.8T patent/DE112014004073T5/de active Pending
- 2014-09-05 CN CN201480049112.4A patent/CN105531405B/zh active Active
- 2014-09-05 US US14/478,608 patent/US10851473B2/en active Active
- 2014-09-05 CN CN201911000419.6A patent/CN110878430B/zh active Active
- 2014-09-05 WO PCT/US2014/054293 patent/WO2015035163A1/en not_active Ceased
- 2014-09-05 KR KR1020167008944A patent/KR102245508B1/ko active Active
- 2014-09-09 TW TW108100546A patent/TWI671443B/zh active
- 2014-09-09 TW TW103130961A patent/TWI652381B/zh active
- 2014-09-09 TW TW108120706A patent/TWI721452B/zh active
-
2019
- 2019-05-30 JP JP2019101117A patent/JP6712759B2/ja active Active
-
2020
- 2020-11-30 US US17/107,103 patent/US11591714B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020083892A1 (en) * | 2000-12-28 | 2002-07-04 | Hiroyuki Kondo | Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal |
| US20120103249A1 (en) * | 2009-03-26 | 2012-05-03 | Ii-Vi Incorporated | Sic single crystal sublimation growth method and apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150068457A1 (en) | 2015-03-12 |
| KR102245508B1 (ko) | 2021-04-28 |
| US20210087706A1 (en) | 2021-03-25 |
| US10851473B2 (en) | 2020-12-01 |
| JP2016532630A (ja) | 2016-10-20 |
| CN110878430A (zh) | 2020-03-13 |
| CN105531405B (zh) | 2019-11-15 |
| JP6712759B2 (ja) | 2020-06-24 |
| WO2015035163A1 (en) | 2015-03-12 |
| JP2019163206A (ja) | 2019-09-26 |
| TWI652381B (zh) | 2019-03-01 |
| JP6535005B2 (ja) | 2019-06-26 |
| TW201520385A (zh) | 2015-06-01 |
| TWI721452B (zh) | 2021-03-11 |
| CN110878430B (zh) | 2021-10-22 |
| US11591714B2 (en) | 2023-02-28 |
| DE112014004073T5 (de) | 2016-06-09 |
| TW201923173A (zh) | 2019-06-16 |
| CN105531405A (zh) | 2016-04-27 |
| TW201942425A (zh) | 2019-11-01 |
| KR20160050087A (ko) | 2016-05-10 |
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