JP6712759B2 - バルクの炭化ケイ素を製造するための装置 - Google Patents
バルクの炭化ケイ素を製造するための装置 Download PDFInfo
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- JP6712759B2 JP6712759B2 JP2019101117A JP2019101117A JP6712759B2 JP 6712759 B2 JP6712759 B2 JP 6712759B2 JP 2019101117 A JP2019101117 A JP 2019101117A JP 2019101117 A JP2019101117 A JP 2019101117A JP 6712759 B2 JP6712759 B2 JP 6712759B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 198
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 195
- 238000004519 manufacturing process Methods 0.000 title description 8
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 56
- 239000010410 layer Substances 0.000 description 37
- 238000000034 method Methods 0.000 description 35
- 229910002804 graphite Inorganic materials 0.000 description 30
- 239000010439 graphite Substances 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 29
- 238000000859 sublimation Methods 0.000 description 26
- 230000008022 sublimation Effects 0.000 description 26
- 229910052799 carbon Inorganic materials 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 238000009413 insulation Methods 0.000 description 22
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
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- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- 229910052786 argon Inorganic materials 0.000 description 2
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- -1 for example Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
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- 239000000110 cooling liquid Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
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- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
本出願は、2013年9月6日出願の米国仮特許出願第61/874633号に関連する。当該特許出願の全内容は参照により本明細書に組み込まれる。
本発明は、昇華炉及び低い欠陥密度を有するバルクの炭化ケイ素を製造する方法に関する。
Claims (8)
- 炭化ケイ素炉に用いられるためのホットゾーンであって、
a)上部領域と下部領域を有し、1又は複数の通気口を有するるつぼ;
b)るつぼを密封するるつぼカバー;
c)るつぼの下部領域に位置する炭化ケイ素前駆体;
d)るつぼの上部領域に位置するシードモジュールであり、少なくとも一つの蒸気放出開口部を有するシードホルダー、及び上面と底面を有する炭化ケイ素シードをシードホルダー内に含む、シードモジュール、
ここで、炭化ケイ素シードの上面は、るつぼの上部領域に露出しているか又はシード保護層を有しており、炭化ケイ素シードの底面は、るつぼの上部領域に露出し、かつ炭化ケイ素前駆体に向いている;
e)1又は複数の孔を有する少なくとも一つの蒸気放出リングであり、シードホルダー内の頂部側に組み込まれているか、又はシードホルダーの外側の頂部に配置され、少なくとも一つの孔がるつぼの通気口の少なくとも一つとそろえられている蒸気放出リング;及び
f)シードホルダーに設けられた蒸気放出開口部を通り、蒸気放出リングが有する孔と位置合わせされたるつぼの通気口を通って排出するための蒸気の経路、
を含む、ホットゾーン。 - 炭化ケイ素前駆体がソースモジュール内に含まれ、ソースモジュールがるつぼの下部領域に配置される、請求項1に記載のホットゾーン。
- ソースモジュールが前駆体チャンバを含み、炭化ケイ素前駆体が前駆体チャンバ内に含まれている、請求項2に記載のホットゾーン。
- 炭化ケイ素前駆体が多孔質である、請求項1に記載のホットゾーン。
- 炭化ケイ素前駆体が炭化ケイ素の密度よりも小さい密度を有する、請求項4に記載のホットゾーン。
- 炭化ケイ素前駆体が炭化ケイ素前駆体の総重量に対して10%未満の粒子状物質を含有する、請求項1に記載のホットゾーン。
- 炭化ケイ素シードの上面がシード保護層を含む、請求項1に記載のホットゾーン。
- るつぼの上部領域が上部直径を有する実質的に円筒の形状であり、るつぼの下部領域が下部直径を有する実質的に円筒の形状であり、ここで上部直径が下部直径よりも大きいことを特徴とする、請求項1に記載のホットゾーン。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US201361874633P | 2013-09-06 | 2013-09-06 | |
US61/874,633 | 2013-09-06 |
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JP2016540419A Division JP6535005B2 (ja) | 2013-09-06 | 2014-09-05 | バルクの炭化ケイ素を製造するための装置 |
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JP2019163206A JP2019163206A (ja) | 2019-09-26 |
JP6712759B2 true JP6712759B2 (ja) | 2020-06-24 |
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JP2019101117A Active JP6712759B2 (ja) | 2013-09-06 | 2019-05-30 | バルクの炭化ケイ素を製造するための装置 |
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US (2) | US10851473B2 (ja) |
JP (2) | JP6535005B2 (ja) |
KR (1) | KR102245508B1 (ja) |
CN (2) | CN105531405B (ja) |
DE (1) | DE112014004073T5 (ja) |
TW (3) | TWI721452B (ja) |
WO (1) | WO2015035163A1 (ja) |
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WO2015035145A1 (en) * | 2013-09-06 | 2015-03-12 | Gtat Corporation | Method and apparatus for producing bulk silicon carbide from a silicon carbide precursor |
CN105174296B (zh) * | 2015-05-22 | 2016-12-07 | 鸿福晶体科技(安徽)有限公司 | 一种氢氧化铝焙烧专用组合坩埚盖 |
US10142086B2 (en) | 2015-06-11 | 2018-11-27 | At&T Intellectual Property I, L.P. | Repeater and methods for use therewith |
CN105543966A (zh) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | 一种碳化硅单晶生长用复合保温结构 |
TW201807272A (zh) * | 2016-08-26 | 2018-03-01 | 國家中山科學研究院 | 一種用於成長單晶晶體之裝置 |
CN108946735B (zh) * | 2017-05-19 | 2022-11-11 | 新疆天科合达蓝光半导体有限公司 | 一种碳化硅晶体生长用大粒径碳化硅粉料的合成方法 |
JP6937525B2 (ja) * | 2018-10-16 | 2021-09-22 | 山▲東▼天岳先▲進▼科技股▲フン▼有限公司 | 大型サイズ高純度炭化ケイ素単結晶、基板及びその製造方法並びに製造用装置 |
DE102020117661A1 (de) * | 2020-07-03 | 2022-01-20 | Friedrich-Alexander-Universität Erlangen-Nürnberg | Kristallzüchtungsanlage zur Herstellung eines Einkristalls |
US20220189768A1 (en) * | 2020-12-15 | 2022-06-16 | Cree, Inc. | Large dimension silicon carbide single crystalline materials with reduced crystallographic stress |
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CN114990690B (zh) * | 2022-06-30 | 2024-02-27 | 武汉大学 | 一种用于气相升华法制备碳化硅单晶的坩埚装置 |
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US10851473B2 (en) | 2020-12-01 |
DE112014004073T5 (de) | 2016-06-09 |
TW201942425A (zh) | 2019-11-01 |
CN110878430A (zh) | 2020-03-13 |
TW201923173A (zh) | 2019-06-16 |
TWI721452B (zh) | 2021-03-11 |
CN105531405B (zh) | 2019-11-15 |
JP2019163206A (ja) | 2019-09-26 |
TWI671443B (zh) | 2019-09-11 |
CN110878430B (zh) | 2021-10-22 |
TWI652381B (zh) | 2019-03-01 |
KR20160050087A (ko) | 2016-05-10 |
JP2016532630A (ja) | 2016-10-20 |
KR102245508B1 (ko) | 2021-04-28 |
US20210087706A1 (en) | 2021-03-25 |
US11591714B2 (en) | 2023-02-28 |
WO2015035163A1 (en) | 2015-03-12 |
CN105531405A (zh) | 2016-04-27 |
JP6535005B2 (ja) | 2019-06-26 |
US20150068457A1 (en) | 2015-03-12 |
TW201520385A (zh) | 2015-06-01 |
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