CN105518187B - 生产大块硅碳化物的方法 - Google Patents

生产大块硅碳化物的方法 Download PDF

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CN105518187B
CN105518187B CN201480049097.3A CN201480049097A CN105518187B CN 105518187 B CN105518187 B CN 105518187B CN 201480049097 A CN201480049097 A CN 201480049097A CN 105518187 B CN105518187 B CN 105518187B
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silicon carbide
seed
crucible
precursor
silicon
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CN105518187A (zh
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R·V·德切夫
P·萨坦纳日哈瓦
A·M·安德凯威
D·S·李特尔
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Gtat Co
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Gtat Co
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201480049097.3A 2013-09-06 2014-09-05 生产大块硅碳化物的方法 Active CN105518187B (zh)

Priority Applications (1)

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CN201910967962.7A CN110670124B (zh) 2013-09-06 2014-09-05 生产大块硅碳化物的方法

Applications Claiming Priority (3)

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US201361874597P 2013-09-06 2013-09-06
US61/874,597 2013-09-06
PCT/US2014/054255 WO2015035140A1 (en) 2013-09-06 2014-09-05 Method for producing bulk silicon carbide

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CN105518187A CN105518187A (zh) 2016-04-20
CN105518187B true CN105518187B (zh) 2019-11-08

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US (2) US10801126B2 (enExample)
JP (1) JP6487446B2 (enExample)
KR (1) KR102266585B1 (enExample)
CN (2) CN105518187B (enExample)
DE (1) DE112014004096T5 (enExample)
TW (2) TWI654346B (enExample)
WO (1) WO2015035140A1 (enExample)

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DE112014004056T5 (de) 2013-09-06 2016-06-02 Gtat Corporation Verfahren und Apparatur zur Herstellung von Massen-Siliciumcarbid aus einem Siliciumcarbid-Vorläufer
US11846038B2 (en) * 2018-08-30 2023-12-19 Senic Inc. Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material
CN109402731B (zh) * 2018-10-17 2021-01-15 福建北电新材料科技有限公司 一种高纯半绝缘碳化硅晶体生长装置及其方法
JP2020189756A (ja) * 2019-05-17 2020-11-26 信越半導体株式会社 結晶成長装置及び結晶成長方法
EP3760766B1 (en) 2019-07-03 2022-03-09 SiCrystal GmbH System for efficient manufacturing of a plurality of high-quality semiconductor single crystals, and method of manufacturing same
EP3760765B1 (en) * 2019-07-03 2022-03-16 SiCrystal GmbH System for horizontal growth of high-quality semiconductor single crystals, and method of manufacturing same
JP7434802B2 (ja) * 2019-10-30 2024-02-21 株式会社レゾナック 結晶成長装置及び結晶成長方法
CN112160025B (zh) * 2020-08-27 2021-07-16 露笑新能源技术有限公司 一种基于晶体炉的加热组件结构
US20220251725A1 (en) * 2021-02-09 2022-08-11 National Chung Shan Institute Of Science And Technology Method of growing on-axis silicon carbide single crystal by regulating silicon carbide source material in size
CN113652750B (zh) * 2021-08-18 2022-07-12 山东天岳先进科技股份有限公司 具有环形形貌的碳化硅晶体及其制备方法和制得的衬底
CN116716655B (zh) * 2023-06-14 2024-04-02 通威微电子有限公司 生长高质量碳化硅晶体的装置、方法及碳化硅晶体

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CN101061262A (zh) * 2004-10-04 2007-10-24 格里公司 低1c螺旋位错3英寸碳化硅晶片
WO2008014446A2 (en) * 2006-07-28 2008-01-31 Caracal, Inc. Sintered metal components for crystal growth reactors
CN101580964A (zh) * 2008-05-12 2009-11-18 中国科学院物理研究所 一种用于生长高质量碳化硅晶体的籽晶托
JP2009280431A (ja) * 2008-05-21 2009-12-03 Bridgestone Corp 炭化珪素単結晶の製造方法
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CN102596804A (zh) * 2009-09-15 2012-07-18 Ii-Vi有限公司 SiC单晶的升华生长
CN101985773A (zh) * 2009-11-05 2011-03-16 新疆天科合达蓝光半导体有限公司 一种籽晶处理方法和生长碳化硅单晶的方法
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Also Published As

Publication number Publication date
TW201920784A (zh) 2019-06-01
US10801126B2 (en) 2020-10-13
CN110670124A (zh) 2020-01-10
TW201522726A (zh) 2015-06-16
WO2015035140A1 (en) 2015-03-12
JP6487446B2 (ja) 2019-03-20
TWI654346B (zh) 2019-03-21
US20210032770A1 (en) 2021-02-04
CN110670124B (zh) 2021-07-30
US20150068445A1 (en) 2015-03-12
KR102266585B1 (ko) 2021-06-18
US11505876B2 (en) 2022-11-22
DE112014004096T5 (de) 2016-06-23
TWI690627B (zh) 2020-04-11
KR20160050086A (ko) 2016-05-10
JP2016531836A (ja) 2016-10-13
CN105518187A (zh) 2016-04-20

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