JP2019214512A - 欠陥密度の低いバルクの炭化ケイ素 - Google Patents
欠陥密度の低いバルクの炭化ケイ素 Download PDFInfo
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- JP2019214512A JP2019214512A JP2019149764A JP2019149764A JP2019214512A JP 2019214512 A JP2019214512 A JP 2019214512A JP 2019149764 A JP2019149764 A JP 2019149764A JP 2019149764 A JP2019149764 A JP 2019149764A JP 2019214512 A JP2019214512 A JP 2019214512A
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- silicon carbide
- seed
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- carbide boule
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
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Abstract
Description
本出願は、2013年9月6日出願の米国仮特許出願第61/874640号に関連する。当該特許出願の全内容は参照により本明細書に組み込まれる。
本発明は、昇華炉及び低い欠陥密度を有するバルクの炭化ケイ素を製造する方法に関する。
本発明は昇華炉で形成される炭化ケイ素ブールに関し、炭化ケイ素ブールは、少なくとも2つの炭素質のコーティングを含む平坦で実施的に円形の外側表面、平坦な外側表面と平行な方向に実質的に円形の断面形状を有する中間部、及び平坦な外側表面と反対側に円錐形の外部表面を有する。好ましくは、炭化ケイ素ブールは欠陥数の合計が約8000/cm2より少ない。
Claims (10)
- 昇華炉で形成される炭化ケイ素ブールであって、
炭化ケイ素シードウエハの上面である平坦で実質的に円形の外側表面、
ブールの周囲に沿って、頂部の内方側へ一旦向かって直径を減少させた後、中間部の中央側へ向かって直径を増加させるように湾曲した曲線を描く外側表面、及び
平坦で実質的に円形の外側表面の反対側の円錐形の外部表面、
を有する、炭化ケイ素ブール。 - 炭素質のコーティングの少なくとも一つが硬化されている、請求項1に記載の炭化ケイ素ブール。
- 炭化ケイ素ブールが、シード保護層を形成するために硬化された複合体の層を形成している2〜5のコーティングを平坦な上面の上に含む、請求項1に記載の炭化ケイ素ブール。
- 炭化ケイ素ブールの最大直径が75mmより大きい、請求項1に記載の炭化ケイ素ブール。
- 炭化ケイ素ブールの最大直径が100mmより大きい、請求項1に記載の炭化ケイ素ブール。
- 炭化ケイ素ブールの最大直径が150mmより大きい、請求項1に記載の炭化ケイ素ブール。
- 炭化ケイ素ブールの最大直径が200mmより大きい、請求項1に記載の炭化ケイ素ブール。
- 炭化ケイ素ブールの欠陥数の合計が8000/cm2より少ない、請求項1に記載の炭化ケイ素ブール。
- 炭化ケイ素ブールの貫通刃状転位(threading edge dislocation)の密度が4000/cm2より少ない、請求項8に記載の炭化ケイ素ブール。
- 炭化ケイ素ブールの基底面の欠陥の密度が500/cm2より少ない、請求項8に記載の炭化ケイ素ブール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361874640P | 2013-09-06 | 2013-09-06 | |
US61/874,640 | 2013-09-06 |
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JP2016540423A Division JP6574775B2 (ja) | 2013-09-06 | 2014-09-05 | 欠陥密度の低いバルクの炭化ケイ素 |
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JP2019214512A true JP2019214512A (ja) | 2019-12-19 |
JP7054934B2 JP7054934B2 (ja) | 2022-04-15 |
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JP2016540423A Active JP6574775B2 (ja) | 2013-09-06 | 2014-09-05 | 欠陥密度の低いバルクの炭化ケイ素 |
JP2019149764A Active JP7054934B2 (ja) | 2013-09-06 | 2019-08-19 | 欠陥密度の低いバルクの炭化ケイ素 |
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US (1) | US9512542B2 (ja) |
JP (2) | JP6574775B2 (ja) |
KR (1) | KR102245509B1 (ja) |
CN (1) | CN105518191B (ja) |
DE (1) | DE112014004093T5 (ja) |
TW (1) | TWI648218B (ja) |
WO (1) | WO2015035170A1 (ja) |
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TWI660076B (zh) * | 2017-10-06 | 2019-05-21 | 環球晶圓股份有限公司 | 碳化矽晶體及其製造方法 |
JP7393900B2 (ja) * | 2019-09-24 | 2023-12-07 | 一般財団法人電力中央研究所 | 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法 |
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JP2003523918A (ja) * | 2000-02-15 | 2003-08-12 | ザ フォックス グループ,インコーポレイティド | 低欠陥密度炭化ケイ素を成長させる方法及び装置、並びに得られる物質 |
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JP2013067523A (ja) * | 2011-09-21 | 2013-04-18 | Sumitomo Electric Ind Ltd | 炭化珪素基板およびその製造方法 |
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JPH06316499A (ja) * | 1993-04-30 | 1994-11-15 | Sharp Corp | 炭化珪素単結晶の製造方法 |
WO1997007265A1 (de) | 1995-08-16 | 1997-02-27 | Siemens Aktiengesellschaft | KEIMKRISTALL ZUM HERSTELLEN VON EINKRISTALLEN, VERWENDUNG DES KEIMKRISTALLS UND VERFAHREN ZUM HERSTELLEN VON SiC-EINKRISTALLEN ODER EINKRISTALLINEN SiC-SCHICHTEN |
US5683507A (en) * | 1995-09-05 | 1997-11-04 | Northrop Grumman Corporation | Apparatus for growing large silicon carbide single crystals |
US5944890A (en) * | 1996-03-29 | 1999-08-31 | Denso Corporation | Method of producing single crystals and a seed crystal used in the method |
US7294324B2 (en) * | 2004-09-21 | 2007-11-13 | Cree, Inc. | Low basal plane dislocation bulk grown SiC wafers |
US7314521B2 (en) | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low micropipe 100 mm silicon carbide wafer |
US7300519B2 (en) * | 2004-11-17 | 2007-11-27 | Cree, Inc. | Reduction of subsurface damage in the production of bulk SiC crystals |
EP2411569B1 (en) * | 2009-03-26 | 2021-09-22 | II-VI Incorporated | Sic single crystal sublimation growth method and apparatus |
WO2011065060A1 (ja) * | 2009-11-30 | 2011-06-03 | 住友電気工業株式会社 | 単結晶の製造方法 |
JP5614387B2 (ja) * | 2011-08-29 | 2014-10-29 | 新日鐵住金株式会社 | 炭化珪素単結晶の製造方法、及び炭化珪素単結晶インゴット |
JP6226959B2 (ja) * | 2012-04-20 | 2017-11-08 | トゥー‐シックス・インコーポレイテッド | 大口径高品質SiC単結晶、方法、及び装置 |
WO2015035152A1 (en) * | 2013-09-06 | 2015-03-12 | Gtat Corporation | Method and apparatus for producing bulk silicon carbide using a silicon carbide seed |
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Patent Citations (5)
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JP2001114598A (ja) * | 1999-10-15 | 2001-04-24 | Denso Corp | 炭化珪素単結晶製造方法及び炭化珪素単結晶製造装置 |
JP2003523918A (ja) * | 2000-02-15 | 2003-08-12 | ザ フォックス グループ,インコーポレイティド | 低欠陥密度炭化ケイ素を成長させる方法及び装置、並びに得られる物質 |
JP2010515661A (ja) * | 2007-01-16 | 2010-05-13 | トゥー‐シックス・インコーポレイテッド | 多層成長ガイドを用いた誘導直径SiC昇華成長 |
JP2013504513A (ja) * | 2009-09-15 | 2013-02-07 | トゥー‐シックス・インコーポレイテッド | SiC単結晶の昇華成長方法 |
JP2013067523A (ja) * | 2011-09-21 | 2013-04-18 | Sumitomo Electric Ind Ltd | 炭化珪素基板およびその製造方法 |
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JP6574775B2 (ja) | 2019-09-11 |
WO2015035170A1 (en) | 2015-03-12 |
JP2016531837A (ja) | 2016-10-13 |
JP7054934B2 (ja) | 2022-04-15 |
CN105518191A (zh) | 2016-04-20 |
CN105518191B (zh) | 2021-05-11 |
KR102245509B1 (ko) | 2021-04-28 |
DE112014004093T5 (de) | 2016-06-23 |
TW201515995A (zh) | 2015-05-01 |
US9512542B2 (en) | 2016-12-06 |
TWI648218B (zh) | 2019-01-21 |
US20150072101A1 (en) | 2015-03-12 |
KR20160050088A (ko) | 2016-05-10 |
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