JP2014512090A - 重なったドープ領域を有するショットキーダイオードを含む半導体デバイス及びその製造方法 - Google Patents
重なったドープ領域を有するショットキーダイオードを含む半導体デバイス及びその製造方法 Download PDFInfo
- Publication number
- JP2014512090A JP2014512090A JP2013558045A JP2013558045A JP2014512090A JP 2014512090 A JP2014512090 A JP 2014512090A JP 2013558045 A JP2013558045 A JP 2013558045A JP 2013558045 A JP2013558045 A JP 2013558045A JP 2014512090 A JP2014512090 A JP 2014512090A
- Authority
- JP
- Japan
- Prior art keywords
- doped region
- semiconductor layer
- region
- longitudinally extending
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000002019 doping agent Substances 0.000 claims description 28
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- 230000015556 catabolic process Effects 0.000 claims description 15
- 230000035515 penetration Effects 0.000 claims description 4
- 230000002441 reversible effect Effects 0.000 description 34
- 230000000903 blocking effect Effects 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0495—Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【選択図】図12
Description
本出願は、2006年8月1日に出願された「降伏を制御したショットキーダイオードを含む半導体デバイス及びその製造方法」という名称の米国特許出願第11/496,842号の継続出願である、2009年6月26日に出願された、「アイランド状に配置したドープ領域を有するショットキーダイオードを含む半導体デバイス及びその製造方法」という名称の米国特許出願第12/492,670号の一部継続出願であり、これらの特許出願は本発明の譲受人に譲渡されるとともに、その開示内容は本明細書に完全に記載されているかのように全体が引用により本明細書に組み入れられる。
114 ドリフト層
114A 露出部分
400 JBSダイオード
430 長手方向JBSセグメント
432 列
434a 線
434b 線
Claims (20)
- 半導体デバイスであって、
第1の導電型を有するとともに、前記半導体デバイスの活性領域を定める表面を有する半導体層と、
前記第1の導電型とは逆の第2の導電型を有するとともに、前記活性領域内に前記半導体層の複数の露出部分を定める、前記活性領域内の複数の離間したドープ領域と、
を含み、
前記複数のドープ領域は、複数の長手方向に延びるセグメントを各々が含む長手方向に延びる複数の列を有し、
第1の列内の前記長手方向に延びるセグメントは、前記長手方向とは垂直の横方向の隣接する列内の前記長手方向に延びるセグメントに少なくとも部分的に重なる、
ことを特徴とする半導体デバイス。 - 前記第1の列内の第1の長手方向に延びるセグメントは、前記横方向の前記隣接する列内の2つの長手方向に延びるセグメントに少なくとも部分的に重なる、
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記第1の列内の前記長手方向に延びるセグメントのうちの長手方向に隣接するセグメント同士は距離Lだけ離間し、隣接する列内の前記長手方向に延びるセグメントのうちの横方向に隣接するセグメント同士は距離Wだけ離間し、LはWにほぼ等しい、
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記半導体デバイスの前記活性領域内の任意の地点は、前記長手方向に延びるセグメントのうちの少なくとも1つに対し、隣接する列内の前記長手方向に延びるセグメントのうちの横方向に隣接するセグメント同士の重なった部分間の間隔の2分の1と同じほど少なくとも近接する、
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記半導体デバイスの前記活性領域内の任意の地点は、前記長手方向に延びるセグメントのうちの少なくとも1つに対し、列内の前記長手方向に延びるセグメントのうちの長手方向に隣接するセグメント間の間隔の2分の1と同じほど少なくとも近接する、
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記半導体層の前記露出部分及び前記ドープ領域に接触する金属領域をさらに含む、
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記半導体層は、炭化ケイ素半導体層を含む、
ことを特徴とする請求項6に記載の半導体デバイス。 - 前記ドープ領域は、約1×1017〜約1×1018cm-3のドーパント濃度を有するp型炭化ケイ素を含む、
ことを特徴とする請求項7に記載の半導体デバイス。 - 前記ドープ領域のドーピング濃度よりも高いドーピング濃度を有する第2のドープ領域を前記半導体層内にさらに含み、前記複数のドープ領域及び前記第2のドープ領域は、前記半導体層の前記表面に位置し、前記複数のドープ領域及び前記第2のドープ領域が占める表面積の、前記ダイオードの前記活性領域の総表面積に対する比率は約0.4未満である、
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記半導体層の露出部分との間にショットキー接合部を形成する金属層を前記半導体層上にさらに含み、前記第2のドープ領域と前記半導体層の間のpn接合部のターンオン電圧は、前記金属層と前記半導体層の前記露出部分との間の前記ショットキー接合部のターンオン電圧よりも高い、
ことを特徴とする請求項9に記載の半導体デバイス。 - 前記ドープ領域は、前記金属層と前記半導体層の前記露出部分との間の前記ショットキー接合部の降伏よりも低い電圧において前記ドープ領域と前記半導体層の間のpn接合部の突き抜けが生じるような厚み及びドーパント濃度を有する、
ことを特徴とする請求項10に記載の半導体デバイス。 - エッジ終端領域をさらに含み、前記ドープ領域は、前記エッジ終端領域の降伏電圧よりも低い電圧において前記ドープ領域と前記半導体層の間のpn接合部の突き抜けが生じるような厚み及びドーパント濃度を有する、
ことを特徴とする請求項1に記載の半導体デバイス。 - 半導体デバイスの形成方法であって、
第1の導電型を有する半導体層内に、前記第1の導電型とは逆の第2の導電型を有する複数のドープ領域を設けることにより、前記半導体層及び前記第1のドープ領域がそれぞれのpn接合部を形成するようにするステップを含み、
前記複数のドープ領域は、複数の長手方向に延びるセグメントを各々が含む長手方向に延びる複数の列を有し、
第1の列内の前記長手方向に延びるセグメントは、前記長手方向とは垂直の横方向の隣接する列内の前記長手方向に延びるセグメントに少なくとも部分的に重なり、前記方法は、
前記半導体層上に、該半導体層との間にショットキー接合部を形成するとともに前記ドープ領域に接触する金属層を設けるステップをさらに含む、
ことを特徴とする方法。 - 前記半導体層内に、該半導体層の前記導電型とは逆の導電型を有するとともに、前記ドープ領域のドーパント濃度よりも高いドーパント濃度を有する第2のドープ領域を設けるステップをさらに含み、前記第2のドープ領域と前記半導体層の間の第2のpn接合部は、前記金属層と前記半導体層の間のショットキー接合部のターンオン電圧よりも高い電圧においてオンになるように構成される、
ことを特徴とする請求項13に記載の方法。 - 前記第1の列内の第1の長手方向に延びるセグメントは、前記横方向の前記隣接する列内の2つの長手方向に延びるセグメントに少なくとも部分的に重なる、
ことを特徴とする請求項13に記載の方法。 - 前記第1の列内の前記長手方向に延びるセグメントのうちの長手方向に隣接するセグメント同士は距離Lだけ離間し、隣接する列内の前記長手方向に延びるセグメントのうちの横方向に隣接するセグメント同士は距離Wだけ離間し、LはWにほぼ等しい、
請求項13に記載の方法。 - 前記半導体層内に、前記ドープ領域のドーピング濃度よりも高いドーピング濃度を有する第2のドープ領域を設けるステップをさらに含む、
ことを特徴とする請求項13に記載の方法。 - 前記複数のドープ領域及び前記第2のドープ領域は、前記半導体層の前記表面に位置し、前記複数のドープ領域及び前記第2のドープ領域が占める表面積の、前記ダイオードの前記活性領域の総表面積に対する比率は約0.4未満である、
ことを特徴とする請求項17に記載の方法。 - 前記半導体層は、炭化ケイ素半導体層を含む、
ことを特徴とする請求項13に記載の方法。 - 前記ドープ領域は、約1×1017〜約1×1018cm-3のドーパント濃度を有するp型炭化ケイ素を含む、
ことを特徴とする請求項13に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/051,606 | 2011-03-18 | ||
US13/051,606 US8432012B2 (en) | 2006-08-01 | 2011-03-18 | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
PCT/US2012/027874 WO2012128934A1 (en) | 2011-03-18 | 2012-03-06 | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014512090A true JP2014512090A (ja) | 2014-05-19 |
JP5990204B2 JP5990204B2 (ja) | 2016-09-07 |
Family
ID=46879673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013558045A Active JP5990204B2 (ja) | 2011-03-18 | 2012-03-06 | 重なったドープ領域を有するショットキーダイオードを含む半導体デバイス及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8432012B2 (ja) |
EP (1) | EP2686876B1 (ja) |
JP (1) | JP5990204B2 (ja) |
KR (1) | KR101675626B1 (ja) |
CN (1) | CN103443907B (ja) |
TW (1) | TWI550884B (ja) |
WO (1) | WO2012128934A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018107399A (ja) * | 2016-12-28 | 2018-07-05 | 新電元工業株式会社 | 半導体装置 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
KR20130049919A (ko) * | 2011-11-07 | 2013-05-15 | 현대자동차주식회사 | 실리콘카바이드 쇼트키 배리어 다이오드 소자 및 이의 제조 방법 |
JP6029397B2 (ja) * | 2012-09-14 | 2016-11-24 | 三菱電機株式会社 | 炭化珪素半導体装置 |
JP2014236171A (ja) | 2013-06-05 | 2014-12-15 | ローム株式会社 | 半導体装置およびその製造方法 |
CN104282732B (zh) | 2013-07-01 | 2017-06-27 | 株式会社东芝 | 半导体装置 |
KR20150026531A (ko) | 2013-09-03 | 2015-03-11 | 삼성전자주식회사 | 반도체 장치 그 제조 방법 |
CN204966510U (zh) | 2014-06-20 | 2016-01-13 | 意法半导体股份有限公司 | 宽带隙高密度半导体开关器件 |
JP6347999B2 (ja) * | 2014-06-25 | 2018-06-27 | シナプティクス・ジャパン合同会社 | ジャンクションバリアショットキーダイオード及びその製造方法 |
CN104576763B (zh) * | 2014-12-31 | 2017-07-11 | 杭州士兰集成电路有限公司 | 一种二极管结构及其制造方法 |
US9583561B2 (en) * | 2015-03-27 | 2017-02-28 | Monolithic Power Systems, Inc. | Schottky diodes with mesh style region and associated methods |
KR101846879B1 (ko) | 2016-07-05 | 2018-04-09 | 현대자동차 주식회사 | 쇼트키 배리어 다이오드 및 그 제조 방법 |
US10510905B2 (en) | 2017-07-06 | 2019-12-17 | Cree, Inc. | Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift region |
US10957759B2 (en) * | 2018-12-21 | 2021-03-23 | General Electric Company | Systems and methods for termination in silicon carbide charge balance power devices |
CN112216746B (zh) * | 2019-07-11 | 2024-05-14 | 即思创意股份有限公司 | 碳化硅半导体器件 |
CN110534583B (zh) * | 2019-08-01 | 2023-03-28 | 山东天岳电子科技有限公司 | 一种肖特基二极管及其制备方法 |
CN110571282B (zh) * | 2019-08-01 | 2023-04-28 | 山东天岳电子科技有限公司 | 一种肖特基二极管及其制造方法 |
CN111628007B (zh) * | 2020-04-29 | 2023-09-05 | 株洲中车时代半导体有限公司 | 功率二极管及其制造方法 |
CN115621329B (zh) * | 2022-12-19 | 2023-03-28 | 深圳腾睿微电子科技有限公司 | Jbs的元胞结构及对应的碳化硅器件 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000294804A (ja) * | 1999-04-07 | 2000-10-20 | Fuji Electric Co Ltd | ショットキーバリアダイオードおよびその製造方法 |
JP2002246610A (ja) * | 2001-02-16 | 2002-08-30 | Sanken Electric Co Ltd | 半導体素子 |
JP2005045212A (ja) * | 2003-07-04 | 2005-02-17 | Matsushita Electric Ind Co Ltd | ショットキバリアダイオード及びその製造方法 |
JP2007311822A (ja) * | 2007-07-23 | 2007-11-29 | Toshiba Corp | ショットキーバリヤダイオード |
JP2008042198A (ja) * | 2006-08-01 | 2008-02-21 | Cree Inc | 半導体デバイス及びその製造方法 |
JP2010040857A (ja) * | 2008-08-06 | 2010-02-18 | Toshiba Corp | 半導体装置 |
Family Cites Families (238)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3439189A (en) | 1965-12-28 | 1969-04-15 | Teletype Corp | Gated switching circuit comprising parallel combination of latching and shunt switches series-connected with input-output control means |
US3629011A (en) | 1967-09-11 | 1971-12-21 | Matsushita Electric Ind Co Ltd | Method for diffusing an impurity substance into silicon carbide |
US3924024A (en) | 1973-04-02 | 1975-12-02 | Ncr Co | Process for fabricating MNOS non-volatile memories |
FR2347780A1 (fr) | 1976-07-21 | 1977-11-04 | Bicosa Recherches | Perfectionnements apportes a un element bistable et circuit interrupteur comportant un tel element bistable |
US4242690A (en) | 1978-06-06 | 1980-12-30 | General Electric Company | High breakdown voltage semiconductor device |
US4466172A (en) | 1979-01-08 | 1984-08-21 | American Microsystems, Inc. | Method for fabricating MOS device with self-aligned contacts |
US4581542A (en) | 1983-11-14 | 1986-04-08 | General Electric Company | Driver circuits for emitter switch gate turn-off SCR devices |
US4644637A (en) | 1983-12-30 | 1987-02-24 | General Electric Company | Method of making an insulated-gate semiconductor device with improved shorting region |
EP0176778B1 (de) | 1984-09-28 | 1991-01-16 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines pn-Übergangs mit hoher Durchbruchsspannung |
US4811065A (en) | 1987-06-11 | 1989-03-07 | Siliconix Incorporated | Power DMOS transistor with high speed body diode |
JPS6449273A (en) | 1987-08-19 | 1989-02-23 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
US4875083A (en) | 1987-10-26 | 1989-10-17 | North Carolina State University | Metal-insulator-semiconductor capacitor formed on silicon carbide |
US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
US5011549A (en) | 1987-10-26 | 1991-04-30 | North Carolina State University | Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon |
US4945394A (en) | 1987-10-26 | 1990-07-31 | North Carolina State University | Bipolar junction transistor on silicon carbide |
JP2680083B2 (ja) | 1988-12-06 | 1997-11-19 | 富士通株式会社 | 半導体基板及びその製造方法 |
JPH02275675A (ja) | 1988-12-29 | 1990-11-09 | Fuji Electric Co Ltd | Mos型半導体装置 |
DE59010606D1 (de) | 1989-03-29 | 1997-01-30 | Siemens Ag | Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit |
US5111253A (en) | 1989-05-09 | 1992-05-05 | General Electric Company | Multicellular FET having a Schottky diode merged therewith |
US4927772A (en) | 1989-05-30 | 1990-05-22 | General Electric Company | Method of making high breakdown voltage semiconductor device |
JPH0766971B2 (ja) | 1989-06-07 | 1995-07-19 | シャープ株式会社 | 炭化珪素半導体装置 |
US5028977A (en) | 1989-06-16 | 1991-07-02 | Massachusetts Institute Of Technology | Merged bipolar and insulated gate transistors |
JP2623850B2 (ja) | 1989-08-25 | 1997-06-25 | 富士電機株式会社 | 伝導度変調型mosfet |
US4946547A (en) | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
JP2542448B2 (ja) | 1990-05-24 | 1996-10-09 | シャープ株式会社 | 電界効果トランジスタおよびその製造方法 |
US5292501A (en) | 1990-06-25 | 1994-03-08 | Degenhardt Charles R | Use of a carboxy-substituted polymer to inhibit plaque formation without tooth staining |
US5200022A (en) | 1990-10-03 | 1993-04-06 | Cree Research, Inc. | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
US5192987A (en) | 1991-05-17 | 1993-03-09 | Apa Optics, Inc. | High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions |
US5270554A (en) | 1991-06-14 | 1993-12-14 | Cree Research, Inc. | High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide |
US5155289A (en) | 1991-07-01 | 1992-10-13 | General Atomics | High-voltage solid-state switching devices |
US5170455A (en) | 1991-10-30 | 1992-12-08 | At&T Bell Laboratories | Optical connective device |
US5242841A (en) | 1992-03-25 | 1993-09-07 | Texas Instruments Incorporated | Method of making LDMOS transistor with self-aligned source/backgate and photo-aligned gate |
US6344663B1 (en) | 1992-06-05 | 2002-02-05 | Cree, Inc. | Silicon carbide CMOS devices |
US5629531A (en) | 1992-06-05 | 1997-05-13 | Cree Research, Inc. | Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
US5459107A (en) | 1992-06-05 | 1995-10-17 | Cree Research, Inc. | Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
US5726463A (en) | 1992-08-07 | 1998-03-10 | General Electric Company | Silicon carbide MOSFET having self-aligned gate structure |
US5587870A (en) | 1992-09-17 | 1996-12-24 | Research Foundation Of State University Of New York | Nanocrystalline layer thin film capacitors |
JP3146694B2 (ja) | 1992-11-12 | 2001-03-19 | 富士電機株式会社 | 炭化けい素mosfetおよび炭化けい素mosfetの製造方法 |
US5506421A (en) | 1992-11-24 | 1996-04-09 | Cree Research, Inc. | Power MOSFET in silicon carbide |
KR100305123B1 (ko) | 1992-12-11 | 2001-11-22 | 비센트 비.인그라시아, 알크 엠 아헨 | 정적랜덤액세스메모리셀및이를포함하는반도체장치 |
JPH0799312A (ja) | 1993-02-22 | 1995-04-11 | Texas Instr Inc <Ti> | 半導体装置とその製法 |
JP2811526B2 (ja) | 1993-04-19 | 1998-10-15 | 東洋電機製造株式会社 | 静電誘導ショットキー短絡構造を有する静電誘導型半導体素子 |
US5371383A (en) | 1993-05-14 | 1994-12-06 | Kobe Steel Usa Inc. | Highly oriented diamond film field-effect transistor |
US5539217A (en) | 1993-08-09 | 1996-07-23 | Cree Research, Inc. | Silicon carbide thyristor |
US5479316A (en) | 1993-08-24 | 1995-12-26 | Analog Devices, Inc. | Integrated circuit metal-oxide-metal capacitor and method of making same |
JPH0766433A (ja) | 1993-08-26 | 1995-03-10 | Hitachi Ltd | 半導体整流素子 |
JPH07122749A (ja) | 1993-09-01 | 1995-05-12 | Toshiba Corp | 半導体装置及びその製造方法 |
US5510630A (en) | 1993-10-18 | 1996-04-23 | Westinghouse Electric Corporation | Non-volatile random access memory cell constructed of silicon carbide |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US5396085A (en) | 1993-12-28 | 1995-03-07 | North Carolina State University | Silicon carbide switching device with rectifying-gate |
US5385855A (en) | 1994-02-24 | 1995-01-31 | General Electric Company | Fabrication of silicon carbide integrated circuits |
US5488236A (en) | 1994-05-26 | 1996-01-30 | North Carolina State University | Latch-up resistant bipolar transistor with trench IGFET and buried collector |
CN1040814C (zh) | 1994-07-20 | 1998-11-18 | 电子科技大学 | 一种用于半导体器件的表面耐压区 |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
JPH08213607A (ja) | 1995-02-08 | 1996-08-20 | Ngk Insulators Ltd | 半導体装置およびその製造方法 |
US5510281A (en) | 1995-03-20 | 1996-04-23 | General Electric Company | Method of fabricating a self-aligned DMOS transistor device using SiC and spacers |
DE69512021T2 (de) | 1995-03-31 | 2000-05-04 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | DMOS-Anordnung-Struktur und Verfahren zur Herstellung |
SE9501310D0 (sv) | 1995-04-10 | 1995-04-10 | Abb Research Ltd | A method for introduction of an impurity dopant in SiC, a semiconductor device formed by the mehtod and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC |
US5734180A (en) | 1995-06-02 | 1998-03-31 | Texas Instruments Incorporated | High-performance high-voltage device structures |
US6693310B1 (en) | 1995-07-19 | 2004-02-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
US5967795A (en) | 1995-08-30 | 1999-10-19 | Asea Brown Boveri Ab | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
KR100199997B1 (ko) | 1995-09-06 | 1999-07-01 | 오카메 히로무 | 탄화규소 반도체장치 |
JPH11261061A (ja) | 1998-03-11 | 1999-09-24 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
US6573534B1 (en) | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
JP4001960B2 (ja) | 1995-11-03 | 2007-10-31 | フリースケール セミコンダクター インコーポレイテッド | 窒化酸化物誘電体層を有する半導体素子の製造方法 |
US5972801A (en) | 1995-11-08 | 1999-10-26 | Cree Research, Inc. | Process for reducing defects in oxide layers on silicon carbide |
US6136728A (en) | 1996-01-05 | 2000-10-24 | Yale University | Water vapor annealing process |
US6133587A (en) | 1996-01-23 | 2000-10-17 | Denso Corporation | Silicon carbide semiconductor device and process for manufacturing same |
SE9601174D0 (sv) | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A method for producing a semiconductor device having a semiconductor layer of SiC and such a device |
US5877045A (en) | 1996-04-10 | 1999-03-02 | Lsi Logic Corporation | Method of forming a planar surface during multi-layer interconnect formation by a laser-assisted dielectric deposition |
US5719409A (en) | 1996-06-06 | 1998-02-17 | Cree Research, Inc. | Silicon carbide metal-insulator semiconductor field effect transistor |
US5763905A (en) | 1996-07-09 | 1998-06-09 | Abb Research Ltd. | Semiconductor device having a passivation layer |
SE9602745D0 (sv) | 1996-07-11 | 1996-07-11 | Abb Research Ltd | A method for producing a channel region layer in a SiC-layer for a voltage controlled semiconductor device |
US6002159A (en) | 1996-07-16 | 1999-12-14 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
US5917203A (en) | 1996-07-29 | 1999-06-29 | Motorola, Inc. | Lateral gate vertical drift region transistor |
US5939763A (en) | 1996-09-05 | 1999-08-17 | Advanced Micro Devices, Inc. | Ultrathin oxynitride structure and process for VLSI applications |
EP0837508A3 (en) | 1996-10-18 | 1999-01-20 | Hitachi, Ltd. | Semiconductor device and electric power conversion apparatus therewith |
US6028012A (en) | 1996-12-04 | 2000-02-22 | Yale University | Process for forming a gate-quality insulating layer on a silicon carbide substrate |
JP3225870B2 (ja) | 1996-12-05 | 2001-11-05 | トヨタ車体株式会社 | ルーフスポイラの取付構造 |
US5837572A (en) | 1997-01-10 | 1998-11-17 | Advanced Micro Devices, Inc. | CMOS integrated circuit formed by using removable spacers to produce asymmetrical NMOS junctions before asymmetrical PMOS junctions for optimizing thermal diffusivity of dopants implanted therein |
SE9700141D0 (sv) | 1997-01-20 | 1997-01-20 | Abb Research Ltd | A schottky diode of SiC and a method for production thereof |
SE9700156D0 (sv) | 1997-01-21 | 1997-01-21 | Abb Research Ltd | Junction termination for Si C Schottky diode |
US6180958B1 (en) | 1997-02-07 | 2001-01-30 | James Albert Cooper, Jr. | Structure for increasing the maximum voltage of silicon carbide power transistors |
JP3206727B2 (ja) | 1997-02-20 | 2001-09-10 | 富士電機株式会社 | 炭化けい素縦型mosfetおよびその製造方法 |
DE19809554B4 (de) | 1997-03-05 | 2008-04-03 | Denso Corp., Kariya | Siliziumkarbidhalbleitervorrichtung |
EP0865085A1 (en) | 1997-03-11 | 1998-09-16 | STMicroelectronics S.r.l. | Insulated gate bipolar transistor with high dynamic ruggedness |
JPH10284718A (ja) | 1997-04-08 | 1998-10-23 | Fuji Electric Co Ltd | 絶縁ゲート型サイリスタ |
US6121633A (en) | 1997-06-12 | 2000-09-19 | Cree Research, Inc. | Latch-up free power MOS-bipolar transistor |
US5969378A (en) | 1997-06-12 | 1999-10-19 | Cree Research, Inc. | Latch-up free power UMOS-bipolar transistor |
US6063698A (en) | 1997-06-30 | 2000-05-16 | Motorola, Inc. | Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits |
US5877041A (en) | 1997-06-30 | 1999-03-02 | Harris Corporation | Self-aligned power field effect transistor in silicon carbide |
DE19832329A1 (de) | 1997-07-31 | 1999-02-04 | Siemens Ag | Verfahren zur Strukturierung von Halbleitern mit hoher Präzision, guter Homogenität und Reproduzierbarkeit |
JP3180895B2 (ja) | 1997-08-18 | 2001-06-25 | 富士電機株式会社 | 炭化けい素半導体装置の製造方法 |
WO1999009598A1 (de) | 1997-08-20 | 1999-02-25 | Siemens Aktiengesellschaft | Halbleiterstruktur mit einem alpha-siliziumcarbidbereich sowie verwendung dieser halbleiterstruktur |
US6239463B1 (en) | 1997-08-28 | 2001-05-29 | Siliconix Incorporated | Low resistance power MOSFET or other device containing silicon-germanium layer |
WO1999013512A1 (de) | 1997-09-10 | 1999-03-18 | Infineon Technologies Ag | Halbleiterbauelement mit einer driftzone |
SE9704150D0 (sv) | 1997-11-13 | 1997-11-13 | Abb Research Ltd | Semiconductor device of SiC with insulating layer a refractory metal nitride layer |
JP3085272B2 (ja) | 1997-12-19 | 2000-09-04 | 富士電機株式会社 | 炭化けい素半導体装置の熱酸化膜形成方法 |
JPH11251592A (ja) | 1998-01-05 | 1999-09-07 | Denso Corp | 炭化珪素半導体装置 |
JP3216804B2 (ja) | 1998-01-06 | 2001-10-09 | 富士電機株式会社 | 炭化けい素縦形fetの製造方法および炭化けい素縦形fet |
JPH11266017A (ja) | 1998-01-14 | 1999-09-28 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
JPH11238742A (ja) | 1998-02-23 | 1999-08-31 | Denso Corp | 炭化珪素半導体装置の製造方法 |
JPH11330468A (ja) | 1998-05-20 | 1999-11-30 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置 |
US6627539B1 (en) | 1998-05-29 | 2003-09-30 | Newport Fab, Llc | Method of forming dual-damascene interconnect structures employing low-k dielectric materials |
US6100169A (en) | 1998-06-08 | 2000-08-08 | Cree, Inc. | Methods of fabricating silicon carbide power devices by controlled annealing |
US6107142A (en) | 1998-06-08 | 2000-08-22 | Cree Research, Inc. | Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion |
US6316793B1 (en) | 1998-06-12 | 2001-11-13 | Cree, Inc. | Nitride based transistors on semi-insulating silicon carbide substrates |
JP4123636B2 (ja) | 1998-06-22 | 2008-07-23 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
US5960289A (en) | 1998-06-22 | 1999-09-28 | Motorola, Inc. | Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region |
US6221700B1 (en) | 1998-07-31 | 2001-04-24 | Denso Corporation | Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities |
JP3959856B2 (ja) | 1998-07-31 | 2007-08-15 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
JP2000106371A (ja) | 1998-07-31 | 2000-04-11 | Denso Corp | 炭化珪素半導体装置の製造方法 |
US6246076B1 (en) | 1998-08-28 | 2001-06-12 | Cree, Inc. | Layered dielectric on silicon carbide semiconductor structures |
US6972436B2 (en) | 1998-08-28 | 2005-12-06 | Cree, Inc. | High voltage, high temperature capacitor and interconnection structures |
JP3616258B2 (ja) | 1998-08-28 | 2005-02-02 | 株式会社ルネサステクノロジ | ショットキーダイオードおよびそれを用いた電力変換器 |
SE9802909L (sv) | 1998-08-31 | 1999-10-13 | Abb Research Ltd | Metod för framställning av en pn-övergång för en halvledaranordning av SiC samt en halvledaranordning av SiC med pn-övergång |
JP2000133633A (ja) | 1998-09-09 | 2000-05-12 | Texas Instr Inc <Ti> | ハ―ドマスクおよびプラズマ活性化エッチャントを使用した材料のエッチング方法 |
JP4186337B2 (ja) | 1998-09-30 | 2008-11-26 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
US6048766A (en) | 1998-10-14 | 2000-04-11 | Advanced Micro Devices | Flash memory device having high permittivity stacked dielectric and fabrication thereof |
US6204203B1 (en) | 1998-10-14 | 2001-03-20 | Applied Materials, Inc. | Post deposition treatment of dielectric films for interface control |
US6239466B1 (en) | 1998-12-04 | 2001-05-29 | General Electric Company | Insulated gate bipolar transistor for zero-voltage switching |
US6190973B1 (en) | 1998-12-18 | 2001-02-20 | Zilog Inc. | Method of fabricating a high quality thin oxide |
WO2000042662A1 (de) | 1999-01-12 | 2000-07-20 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Leistungshalbleiterbauelement mit mesa-randabschluss |
US6228720B1 (en) | 1999-02-23 | 2001-05-08 | Matsushita Electric Industrial Co., Ltd. | Method for making insulated-gate semiconductor element |
JP3943749B2 (ja) | 1999-02-26 | 2007-07-11 | 株式会社日立製作所 | ショットキーバリアダイオード |
US6399996B1 (en) | 1999-04-01 | 2002-06-04 | Apd Semiconductor, Inc. | Schottky diode having increased active surface area and method of fabrication |
US6448160B1 (en) | 1999-04-01 | 2002-09-10 | Apd Semiconductor, Inc. | Method of fabricating power rectifier device to vary operating parameters and resulting device |
US6420225B1 (en) | 1999-04-01 | 2002-07-16 | Apd Semiconductor, Inc. | Method of fabricating power rectifier device |
US6238967B1 (en) | 1999-04-12 | 2001-05-29 | Motorola, Inc. | Method of forming embedded DRAM structure |
US6218680B1 (en) | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
US6137139A (en) | 1999-06-03 | 2000-10-24 | Intersil Corporation | Low voltage dual-well MOS device having high ruggedness, low on-resistance, and improved body diode reverse recovery |
JP2000349081A (ja) | 1999-06-07 | 2000-12-15 | Sony Corp | 酸化膜形成方法 |
US6218254B1 (en) | 1999-09-22 | 2001-04-17 | Cree Research, Inc. | Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices |
US6329675B2 (en) | 1999-08-06 | 2001-12-11 | Cree, Inc. | Self-aligned bipolar junction silicon carbide transistors |
US6365932B1 (en) | 1999-08-20 | 2002-04-02 | Denso Corporation | Power MOS transistor |
JP3630594B2 (ja) | 1999-09-14 | 2005-03-16 | 株式会社日立製作所 | SiCショットキーダイオード |
JP4192353B2 (ja) | 1999-09-21 | 2008-12-10 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
DE50009436D1 (de) | 1999-09-22 | 2005-03-10 | Siced Elect Dev Gmbh & Co Kg | SiC-Halbleitervorrichtung mit einem Schottky-Kontakt und Verfahren zu deren Herstellung |
US6373076B1 (en) | 1999-12-07 | 2002-04-16 | Philips Electronics North America Corporation | Passivated silicon carbide devices with low leakage current and method of fabricating |
US6303508B1 (en) | 1999-12-16 | 2001-10-16 | Philips Electronics North America Corporation | Superior silicon carbide integrated circuits and method of fabricating |
US7186609B2 (en) | 1999-12-30 | 2007-03-06 | Siliconix Incorporated | Method of fabricating trench junction barrier rectifier |
US6703642B1 (en) | 2000-02-08 | 2004-03-09 | The United States Of America As Represented By The Secretary Of The Army | Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state |
US6475889B1 (en) | 2000-04-11 | 2002-11-05 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US7125786B2 (en) | 2000-04-11 | 2006-10-24 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US6429041B1 (en) | 2000-07-13 | 2002-08-06 | Cree, Inc. | Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation |
DE10036208B4 (de) | 2000-07-25 | 2007-04-19 | Siced Electronics Development Gmbh & Co. Kg | Halbleiteraufbau mit vergrabenem Inselgebiet und Konaktgebiet |
US6610366B2 (en) | 2000-10-03 | 2003-08-26 | Cree, Inc. | Method of N2O annealing an oxide layer on a silicon carbide layer |
US6956238B2 (en) | 2000-10-03 | 2005-10-18 | Cree, Inc. | Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel |
US6767843B2 (en) | 2000-10-03 | 2004-07-27 | Cree, Inc. | Method of N2O growth of an oxide layer on a silicon carbide layer |
US7067176B2 (en) | 2000-10-03 | 2006-06-27 | Cree, Inc. | Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment |
US6593620B1 (en) | 2000-10-06 | 2003-07-15 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
JP3881840B2 (ja) | 2000-11-14 | 2007-02-14 | 独立行政法人産業技術総合研究所 | 半導体装置 |
US6548333B2 (en) | 2000-12-01 | 2003-04-15 | Cree, Inc. | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment |
JP3940560B2 (ja) | 2001-01-25 | 2007-07-04 | 独立行政法人産業技術総合研究所 | 半導体装置の製造方法 |
DE10214150B4 (de) | 2001-03-30 | 2009-06-18 | Denso Corporation, Kariya | Siliziumkarbidhalbleitervorrichtung und Verfahren zur Herstellung derselben |
JP4892787B2 (ja) | 2001-04-09 | 2012-03-07 | 株式会社デンソー | ショットキーダイオード及びその製造方法 |
JP2002314098A (ja) * | 2001-04-13 | 2002-10-25 | Sanken Electric Co Ltd | 半導体装置 |
US6524900B2 (en) | 2001-07-25 | 2003-02-25 | Abb Research, Ltd | Method concerning a junction barrier Schottky diode, such a diode and use thereof |
US20030025175A1 (en) | 2001-07-27 | 2003-02-06 | Sanyo Electric Company, Ltd. | Schottky barrier diode |
JP4026339B2 (ja) | 2001-09-06 | 2007-12-26 | 豊田合成株式会社 | SiC用電極及びその製造方法 |
JP3559971B2 (ja) | 2001-12-11 | 2004-09-02 | 日産自動車株式会社 | 炭化珪素半導体装置およびその製造方法 |
US7183575B2 (en) | 2002-02-19 | 2007-02-27 | Nissan Motor Co., Ltd. | High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode |
US6855970B2 (en) | 2002-03-25 | 2005-02-15 | Kabushiki Kaisha Toshiba | High-breakdown-voltage semiconductor device |
SE525574C2 (sv) | 2002-08-30 | 2005-03-15 | Okmetic Oyj | Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter |
US7132321B2 (en) | 2002-10-24 | 2006-11-07 | The United States Of America As Represented By The Secretary Of The Navy | Vertical conducting power semiconductor devices implemented by deep etch |
DE10259373B4 (de) | 2002-12-18 | 2012-03-22 | Infineon Technologies Ag | Überstromfeste Schottkydiode mit niedrigem Sperrstrom |
US7221010B2 (en) | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
US7026650B2 (en) | 2003-01-15 | 2006-04-11 | Cree, Inc. | Multiple floating guard ring edge termination for silicon carbide devices |
JP2004247545A (ja) | 2003-02-14 | 2004-09-02 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
WO2004079789A2 (en) | 2003-03-05 | 2004-09-16 | Rensselaer Polytechnic Institute | Interstage isolation in darlington transistors |
CN1532943B (zh) | 2003-03-18 | 2011-11-23 | 松下电器产业株式会社 | 碳化硅半导体器件及其制造方法 |
KR100900562B1 (ko) | 2003-03-24 | 2009-06-02 | 페어차일드코리아반도체 주식회사 | 향상된 uis 내성을 갖는 모스 게이트형 트랜지스터 |
US7074643B2 (en) | 2003-04-24 | 2006-07-11 | Cree, Inc. | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
US6979863B2 (en) | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
US20050012143A1 (en) | 2003-06-24 | 2005-01-20 | Hideaki Tanaka | Semiconductor device and method of manufacturing the same |
US7138668B2 (en) | 2003-07-30 | 2006-11-21 | Nissan Motor Co., Ltd. | Heterojunction diode with reduced leakage current |
US20050104072A1 (en) | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
US7018554B2 (en) | 2003-09-22 | 2006-03-28 | Cree, Inc. | Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
US7291529B2 (en) | 2003-11-12 | 2007-11-06 | Cree, Inc. | Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon |
JP2005167035A (ja) | 2003-12-03 | 2005-06-23 | Kansai Electric Power Co Inc:The | 炭化珪素半導体素子およびその製造方法 |
US7005333B2 (en) | 2003-12-30 | 2006-02-28 | Infineon Technologies Ag | Transistor with silicon and carbon layer in the channel region |
WO2005065385A2 (en) * | 2003-12-30 | 2005-07-21 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US7407837B2 (en) | 2004-01-27 | 2008-08-05 | Fuji Electric Holdings Co., Ltd. | Method of manufacturing silicon carbide semiconductor device |
JP2005303027A (ja) | 2004-04-13 | 2005-10-27 | Nissan Motor Co Ltd | 半導体装置 |
DE102005017814B4 (de) | 2004-04-19 | 2016-08-11 | Denso Corporation | Siliziumkarbid-Halbleiterbauelement und Verfahren zu dessen Herstellung |
US7071518B2 (en) | 2004-05-28 | 2006-07-04 | Freescale Semiconductor, Inc. | Schottky device |
US7118970B2 (en) | 2004-06-22 | 2006-10-10 | Cree, Inc. | Methods of fabricating silicon carbide devices with hybrid well regions |
EP1619276B1 (en) | 2004-07-19 | 2017-01-11 | Norstel AB | Homoepitaxial growth of SiC on low off-axis SiC wafers |
US20060211210A1 (en) | 2004-08-27 | 2006-09-21 | Rensselaer Polytechnic Institute | Material for selective deposition and etching |
JP4777630B2 (ja) | 2004-09-21 | 2011-09-21 | 株式会社日立製作所 | 半導体装置 |
JP3914226B2 (ja) | 2004-09-29 | 2007-05-16 | 株式会社東芝 | 高耐圧半導体装置 |
JP4954463B2 (ja) | 2004-10-22 | 2012-06-13 | 三菱電機株式会社 | ショットキーバリアダイオード |
JP4899405B2 (ja) | 2004-11-08 | 2012-03-21 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
US7304363B1 (en) | 2004-11-26 | 2007-12-04 | United States Of America As Represented By The Secretary Of The Army | Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device |
US7247550B2 (en) | 2005-02-08 | 2007-07-24 | Teledyne Licensing, Llc | Silicon carbide-based device contact and contact fabrication method |
US7737522B2 (en) | 2005-02-11 | 2010-06-15 | Alpha & Omega Semiconductor, Ltd. | Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction |
US7615774B2 (en) | 2005-04-29 | 2009-11-10 | Cree.Inc. | Aluminum free group III-nitride based high electron mobility transistors |
US7544963B2 (en) | 2005-04-29 | 2009-06-09 | Cree, Inc. | Binary group III-nitride based high electron mobility transistors |
US8901699B2 (en) | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
US7679223B2 (en) | 2005-05-13 | 2010-03-16 | Cree, Inc. | Optically triggered wide bandgap bipolar power switching devices and circuits |
US7414268B2 (en) | 2005-05-18 | 2008-08-19 | Cree, Inc. | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities |
US7528040B2 (en) | 2005-05-24 | 2009-05-05 | Cree, Inc. | Methods of fabricating silicon carbide devices having smooth channels |
US20060267021A1 (en) | 2005-05-27 | 2006-11-30 | General Electric Company | Power devices and methods of manufacture |
JP4777699B2 (ja) | 2005-06-13 | 2011-09-21 | 本田技研工業株式会社 | バイポーラ型半導体装置およびその製造方法 |
US7548112B2 (en) | 2005-07-21 | 2009-06-16 | Cree, Inc. | Switch mode power amplifier using MIS-HEMT with field plate extension |
US7304334B2 (en) | 2005-09-16 | 2007-12-04 | Cree, Inc. | Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same |
WO2007035333A1 (en) | 2005-09-16 | 2007-03-29 | Cree, Inc. | Methods of processing semiconductor wafers having silicon carbide power devices thereon |
JP2007103784A (ja) | 2005-10-06 | 2007-04-19 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポーラトランジスタ |
US7345310B2 (en) | 2005-12-22 | 2008-03-18 | Cree, Inc. | Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof |
US7592211B2 (en) | 2006-01-17 | 2009-09-22 | Cree, Inc. | Methods of fabricating transistors including supported gate electrodes |
US20070228505A1 (en) | 2006-04-04 | 2007-10-04 | Mazzola Michael S | Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making |
JP5560519B2 (ja) | 2006-04-11 | 2014-07-30 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
JP2007287782A (ja) | 2006-04-13 | 2007-11-01 | Hitachi Ltd | メサ型バイポーラトランジスタ |
US7372087B2 (en) | 2006-06-01 | 2008-05-13 | Northrop Grumman Corporation | Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage |
WO2008005092A2 (en) | 2006-06-29 | 2008-01-10 | Cree, Inc. | Silicon carbide switching devices including p-type channels and methods of forming the same |
JP5645404B2 (ja) | 2006-08-17 | 2014-12-24 | クリー インコーポレイテッドCree Inc. | 高電力絶縁ゲート・バイポーラ・トランジスタ |
US7598567B2 (en) | 2006-11-03 | 2009-10-06 | Cree, Inc. | Power switching semiconductor devices including rectifying junction-shunts |
US8384181B2 (en) | 2007-02-09 | 2013-02-26 | Cree, Inc. | Schottky diode structure with silicon mesa and junction barrier Schottky wells |
US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
JP4450241B2 (ja) | 2007-03-20 | 2010-04-14 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP5090043B2 (ja) * | 2007-03-30 | 2012-12-05 | オンセミコンダクター・トレーディング・リミテッド | ダイオード |
JP4356767B2 (ja) | 2007-05-10 | 2009-11-04 | 株式会社デンソー | ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置 |
JP4375439B2 (ja) | 2007-05-30 | 2009-12-02 | 株式会社デンソー | ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置 |
US8866150B2 (en) | 2007-05-31 | 2014-10-21 | Cree, Inc. | Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts |
JP4539684B2 (ja) | 2007-06-21 | 2010-09-08 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
US7687825B2 (en) | 2007-09-18 | 2010-03-30 | Cree, Inc. | Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication |
CN101855726B (zh) | 2007-11-09 | 2015-09-16 | 克里公司 | 具有台面结构及包含台面台阶的缓冲层的功率半导体器件 |
JP2009141062A (ja) * | 2007-12-05 | 2009-06-25 | Panasonic Corp | 半導体装置及びその製造方法 |
US7989882B2 (en) | 2007-12-07 | 2011-08-02 | Cree, Inc. | Transistor with A-face conductive channel and trench protecting well region |
US9640609B2 (en) | 2008-02-26 | 2017-05-02 | Cree, Inc. | Double guard ring edge termination for silicon carbide devices |
US7842590B2 (en) | 2008-04-28 | 2010-11-30 | Infineon Technologies Austria Ag | Method for manufacturing a semiconductor substrate including laser annealing |
US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
US8097919B2 (en) | 2008-08-11 | 2012-01-17 | Cree, Inc. | Mesa termination structures for power semiconductor devices including mesa step buffers |
JP5370985B2 (ja) * | 2008-09-22 | 2013-12-18 | 日本インター株式会社 | Jbsの製造方法 |
US8536582B2 (en) | 2008-12-01 | 2013-09-17 | Cree, Inc. | Stable power devices on low-angle off-cut silicon carbide crystals |
US8497552B2 (en) | 2008-12-01 | 2013-07-30 | Cree, Inc. | Semiconductor devices with current shifting regions and related methods |
US8288220B2 (en) | 2009-03-27 | 2012-10-16 | Cree, Inc. | Methods of forming semiconductor devices including epitaxial layers and related structures |
-
2011
- 2011-03-18 US US13/051,606 patent/US8432012B2/en active Active
-
2012
- 2012-03-06 WO PCT/US2012/027874 patent/WO2012128934A1/en unknown
- 2012-03-06 EP EP12761339.6A patent/EP2686876B1/en active Active
- 2012-03-06 KR KR1020137025482A patent/KR101675626B1/ko active IP Right Grant
- 2012-03-06 JP JP2013558045A patent/JP5990204B2/ja active Active
- 2012-03-06 CN CN201280013926.3A patent/CN103443907B/zh active Active
- 2012-03-14 TW TW101108732A patent/TWI550884B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000294804A (ja) * | 1999-04-07 | 2000-10-20 | Fuji Electric Co Ltd | ショットキーバリアダイオードおよびその製造方法 |
JP2002246610A (ja) * | 2001-02-16 | 2002-08-30 | Sanken Electric Co Ltd | 半導体素子 |
JP2005045212A (ja) * | 2003-07-04 | 2005-02-17 | Matsushita Electric Ind Co Ltd | ショットキバリアダイオード及びその製造方法 |
JP2008042198A (ja) * | 2006-08-01 | 2008-02-21 | Cree Inc | 半導体デバイス及びその製造方法 |
JP2007311822A (ja) * | 2007-07-23 | 2007-11-29 | Toshiba Corp | ショットキーバリヤダイオード |
JP2010040857A (ja) * | 2008-08-06 | 2010-02-18 | Toshiba Corp | 半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018107399A (ja) * | 2016-12-28 | 2018-07-05 | 新電元工業株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201244115A (en) | 2012-11-01 |
JP5990204B2 (ja) | 2016-09-07 |
KR101675626B1 (ko) | 2016-11-11 |
WO2012128934A1 (en) | 2012-09-27 |
EP2686876A1 (en) | 2014-01-22 |
EP2686876A4 (en) | 2014-09-17 |
TWI550884B (zh) | 2016-09-21 |
CN103443907B (zh) | 2017-06-09 |
US8432012B2 (en) | 2013-04-30 |
CN103443907A (zh) | 2013-12-11 |
EP2686876B1 (en) | 2019-07-31 |
KR20140015412A (ko) | 2014-02-06 |
US20110248285A1 (en) | 2011-10-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5990204B2 (ja) | 重なったドープ領域を有するショットキーダイオードを含む半導体デバイス及びその製造方法 | |
US8330244B2 (en) | Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same | |
JP6203703B2 (ja) | ヘテロ接合障壁領域を含む半導体デバイス及びその製造方法 | |
EP2816608B1 (en) | Junction barrier schottky diodes with current surge capability | |
JP5452914B2 (ja) | 少数キャリアの注入が抑制される炭化シリコン接合障壁ショットキーダイオード | |
US9318623B2 (en) | Recessed termination structures and methods of fabricating electronic devices including recessed termination structures | |
US9466674B2 (en) | Semiconductor devices with non-implanted barrier regions and methods of fabricating same | |
EP2710635B1 (en) | Sic devices with high blocking voltage terminated by a negative bevel |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141105 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141105 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150205 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150305 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150406 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150507 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160120 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160519 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20160527 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160719 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160812 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5990204 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |