JP2014228867A - 有機発光表示装置及びそのリペア方法 - Google Patents
有機発光表示装置及びそのリペア方法 Download PDFInfo
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
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- 229910052779 Neodymium Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
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- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
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- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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Abstract
Description
10 表示パネル
20 走査駆動部
30 データ駆動部
40 制御部
Claims (29)
- 複数のサブ発光素子を含む発光素子と、
前記発光素子に駆動電流を供給する発光画素回路と、
前記発光素子に駆動電流を供給するダミー画素回路と、
前記発光素子と前記ダミー画素回路とを連結するリペア線と、を備え、
前記発光素子は、前記発光画素回路と前記ダミー画素回路のうち一つから駆動電流を供給される有機発光表示装置。 - 各サブ発光素子は、
複数に分割された下部電極のうち一つの下部電極と、
前記下部電極に共通に対向する上部電極と、
前記下部電極と上部電極との間の発光層と、を備え、
前記下部電極は、電極連結配線によって電気的に連結された請求項1に記載の有機発光表示装置。 - 前記電極連結配線は、金属または非晶質シリコン、結晶質シリコン及び酸化物半導体のうち一つで形成された請求項2に記載の有機発光表示装置。
- 前記電極連結配線は、前記発光画素回路の活性層と同一層に同一物質で形成される請求項2に記載の有機発光表示装置。
- 前記電極連結配線は、前記下部電極と一体に形成された請求項2に記載の有機発光表示装置。
- 前記電極連結配線は、
前記下部電極それぞれと連結される第1連結部と、
前記発光画素回路と連結される第2連結部と、
前記第1連結部と前記第2連結部との間に形成され、前記下部電極の連結を切るために切断される切断ノードと、を備える請求項2に記載の有機発光表示装置。 - 前記電極連結配線は、前記第1連結部それぞれでコンタクトホールを通じて前記下部電極それぞれと連結され、前記第2連結部でコンタクトホールを通じて前記発光画素回路と連結される請求項6に記載の有機発光表示装置。
- 一端が前記発光画素回路と連結され、他端が前記第2連結部に連結された第1回路連結配線と連結され、前記一端の切断によって前記発光画素回路と前記発光素子とが分離される少なくとも一つの回路配線を備える請求項6に記載の有機発光表示装置。
- 一端が前記リペア線と連結され、他端が前記第1連結部のうち一つと連結された第1短絡配線と絶縁膜を介して重畳しつつ、レーザービームによって前記第1短絡配線と連結される第1リペア連結配線をさらに備える請求項6に記載の有機発光表示装置。
- 前記第1リペア連結配線と前記第1短絡配線それぞれは、前記発光画素回路の互いに異なる層に形成された導電層と同一層に同一物質で形成される請求項9に記載の有機発光表示装置。
- 前記ダミー画素回路は、各列の最初の行及び最後の行のうち少なくとも一つの行、または各行の最初の列及び最後の列のうち少なくとも一つの列に形成された請求項1に記載の有機発光表示装置。
- 前記発光画素回路は表示部に形成され、前記ダミー画素回路は非表示部に形成された請求項1に記載の有機発光表示装置。
- 前記発光画素回路と前記ダミー画素回路とは同一である請求項1に記載の有機発光表示装置。
- 前記ダミー画素回路は、
一端がリペア線と連結され、他端が前記ダミー画素回路と連結された第2短絡配線と、絶縁膜を介して重畳する第2リペア連結配線が、レーザービームによって前記第2短絡配線と連結されることで前記発光素子と連結される請求項1に記載の有機発光表示装置。 - 前記リペア線は、電源連結配線を通じて電源電圧線と連結され、前記電源連結配線の切断によって前記リペア線と前記電源電圧線とが分離される請求項1に記載の有機発光表示装置。
- 前記リペア線は、列または行ごとに形成された請求項1に記載の有機発光表示装置。
- 前記発光画素回路は、
走査信号に応答してデータ信号を伝達する第1トランジスタと、
前記伝達されたデータ信号に対応する電圧を充電するキャパシタと、
前記キャパシタに充電された電圧に対応する駆動電流を前記発光素子に伝達する第2トランジスタと、を備える請求項1に記載の有機発光表示装置。 - 前記ダミー画素回路は、前記発光画素回路と同時にまたは所定時間差をおいて駆動電流を前記発光素子に供給する請求項1に記載の有機発光表示装置。
- 前記ダミー画素回路は、前記発光画素回路と同じデータ信号を前記発光素子に供給する請求項1に記載の有機発光表示装置。
- 前記複数のサブ発光素子は、
第1下部電極と、前記第1下部電極に対向する上部電極と、前記第1下部電極と前記対向電極との間の発光層とを含む第1サブ発光素子と、
第2下部電極と、前記第2下部電極に対向する上部電極と、前記第2下部電極と前記対向電極との間の発光層とを含む第2サブ発光素子と、を備え、
電極連結配線によって前記第1下部電極と前記第2下部電極とが連結された請求項1に記載の有機発光表示装置。 - 前記電極連結配線は、
前記第1下部電極と連結される第1連結部と、
前記第2下部電極と連結される第2連結部と、
前記発光画素回路と連結される第3連結部と、
前記第1連結部と前記第3連結部との間に形成されて前記第1サブ発光素子を前記発光画素回路から分離するために切断する第1ノードと、前記第2連結部と前記第3連結部との間に形成されて前記第2サブ発光素子を前記発光画素回路から分離するために切断する第2ノードと、を備える請求項20に記載の有機発光表示装置。 - 一端が前記リペア線と連結され、他端が前記第1連結部と連結された第1短絡配線と絶縁膜を介して重畳しつつ、レーザービームによって前記第1短絡配線と連結される第1リペア連結配線と、
一端が前記リペア線と連結され、他端が前記ダミー画素回路と連結された第2短絡配線と絶縁膜を介して重畳しつつ、レーザービームによって前記第2短絡配線と連結される第2リペア連結配線と、をさらに備える請求項20に記載の有機発光表示装置。 - 発光画素回路とダミー画素回路のうち一つから駆動電流を供給される複数のサブ発光素子で構成された発光素子を含む発光画素が複数配された有機発光表示装置で不良画素をリペアする方法において、
不良画素を、リペア線を用いて前記ダミー画素回路と連結する段階と、
前記ダミー画素回路との連結後、前記不良画素が正常発光しない場合、前記複数のサブ発光素子を分離する段階と、を含む有機発光表示装置における不良画素のリペア方法。 - 前記複数のサブ発光素子を分離する段階は、
前記複数のサブ発光素子それぞれの下部電極を連結する電極連結配線において、前記発光画素回路の連結部と前記下部電極の連結部との間を切断する段階を含む請求項23に記載の有機発光表示装置における不良画素のリペア方法。 - 前記ダミー画素回路との連結後、前記検出された不良画素が正常発光する場合、前記発光画素回路と前記発光素子とを分離する段階をさらに含む請求項23に記載の有機発光表示装置における不良画素のリペア方法。
- 前記ダミー画素回路と連結する段階は、
一端が前記リペア線と連結され、他端が前記発光素子と連結された第1短絡配線と絶縁膜を介して重畳された第1リペア連結配線と、
一端が前記リペア線と連結され、他端が前記ダミー画素回路と連結された第2短絡配線と絶縁膜を介して重畳された第2リペア連結配線と、にレーザービームを照射して、それぞれ前記第1及び第2短絡配線と短絡させる段階を含む請求項23に記載の有機発光表示装置における不良画素のリペア方法。 - 前記発光画素回路と前記発光素子とを分離する段階は、
前記発光画素回路と前記発光素子の下部電極との間に連結された少なくとも一つの配線をいずれも切断する段階を含む請求項23に記載の有機発光表示装置における不良画素のリペア方法。 - 前記検出された不良画素の複数のサブ発光素子のうち欠陷のあるサブ発光素子を残りのサブ発光素子から分離する段階をさらに含む請求項23に記載の有機発光表示装置における不良画素のリペア方法。
- 前記欠陷のあるサブ発光素子を残りのサブ発光素子から分離する段階は、
前記複数のサブ発光素子それぞれの下部電極を連結する電極連結配線において、前記欠陷のあるサブ発光素子の下部電極連結部と前記発光画素回路連結部との間を切断する段階を含む請求項28に記載の有機発光表示装置における不良画素のリペア方法。
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JP6573753B2 (ja) | 2019-09-11 |
EP2806458A3 (en) | 2015-03-11 |
CN104183621B (zh) | 2019-07-05 |
CN104183621A (zh) | 2014-12-03 |
CN110223638A (zh) | 2019-09-10 |
EP2806458B1 (en) | 2018-07-04 |
US20140346475A1 (en) | 2014-11-27 |
CN110289268A (zh) | 2019-09-27 |
CN110289268B (zh) | 2024-03-08 |
USRE49484E1 (en) | 2023-04-04 |
US9911799B2 (en) | 2018-03-06 |
CN110223638B (zh) | 2023-08-18 |
EP2806458A2 (en) | 2014-11-26 |
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