JP2014017471A - ボンディング装置およびボンディング方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 292
- 238000003475 lamination Methods 0.000 claims description 31
- 238000003384 imaging method Methods 0.000 claims description 30
- 238000010030 laminating Methods 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 245
- 238000006073 displacement reaction Methods 0.000 description 21
- 239000011229 interlayer Substances 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 7
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- 229910000679 solder Inorganic materials 0.000 description 4
- 238000007689 inspection Methods 0.000 description 3
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Abstract
【解決手段】第一の貫通電極が設けられる第一の層の半導体チップ20の上に第一の貫通電極に対応する位置に第二の貫通電極が設けられる第二の層の半導体チップ30を積層ボンディングするフリップチップボンディング装置500において、半導体チップ20,30の画像を撮像する二視野カメラ16と、制御部50と、を備え、制御部50は、積層ボンディングする前に二視野カメラ16によって撮像した第一の層の半導体チップ20の表面の第一の貫通電極の画像と、積層ボンディングした後に二視野カメラ16によって撮像した第二の層の半導体チップ30の表面の第二の貫通電極の画像とに基づいて積層ボンディングされた各層の半導体チップ20,30の相対位置を検出する相対位置検出プログラム53を備える。
【選択図】図1
Description
Claims (11)
- 第一の貫通電極が設けられる第一の層の半導体チップの上に前記第一の貫通電極に対応する位置に第二の貫通電極が設けられる第二の層の半導体チップを積層ボンディングするボンディング装置であって、
前記半導体チップの画像を撮像するカメラと、
前記カメラが撮像した画像の画像処理とボンディング制御とを行う制御部と、を備え、
前記制御部は、
積層ボンディングする前に前記カメラによって撮像した第一の層の半導体チップ表面の前記第一の貫通電極の画像と、積層ボンディングした後に前記カメラによって撮像した第二の層の半導体チップ表面の前記第二の貫通電極の画像とに基づいて積層ボンディングされた前記各層の半導体チップの相対位置を検出する相対位置検出手段を備えること、
を特徴とするボンディング装置。 - 請求項1に記載のボンディング装置であって、
前記相対位置は、前記第一の層の半導体チップ表面上の基準軸に沿った方向または前記基準軸と直交する方向の前記第二の層の半導体チップの位置ずれ、または前記基準軸に対する前記第二の層の半導体チップの回転角度のいずれか一つまたは複数の組み合わせであること、
を特徴とするボンディング装置。 - 請求項1または2に記載のボンディング装置であって、
前記第一の層の半導体チップと前記第二の層の半導体チップは、隣接する2つの層の各半導体チップであること、
を特徴とするボンディング装置。 - 請求項1または2に記載のボンディング装置であって、
前記第一の層の半導体チップは、初層の半導体チップであり、前記第二の層の半導体チップは、前記初層の半導体チップの上側に積層ボンディングされた他の半導体チップであること、
を特徴とするボンディング装置。 - 請求項1から4のいずれか1項に記載のボンディング装置であって、
前記制御部は、
積層ボンディングする前に前記カメラによって第一の層の半導体チップ表面の前記第一の貫通電極の画像を撮像する第一の撮像手段と、
積層ボンディングする前に前記カメラによって撮像した第一の層の半導体チップ表面の第一のアライメントマークと積層ボンディングする前に前記カメラによって撮像した第二の層の半導体チップ裏面の第二のアライメントマークとの位置を合わせて前記第二の層の半導体チップを前記第一の層の半導体チップの上に積層ボンディングする第一のボンディング手段と、
前記第一のボンディング手段によって積層ボンディングした後に前記カメラによって第二の層の半導体チップ表面の前記第二の貫通電極の画像を撮像する第二の撮像手段と、
前記第一の撮像手段によって撮像した前記第一の貫通電極の画像と前記第二の撮像手段によって撮像した前記第二の貫通電極の画像とに基づいて前記各層の半導体チップの相対位置を検出し、検出した相対位置を積層ボンディングの際のオフセット量として設定するオフセット量設定手段と、
を有することを特徴とするボンディング装置。 - 請求項5に記載のボンディング装置であって、
前記制御部は、
前記第一のアライメントマークに前記第二のアライメントマークが合う位置から前記オフセット量設定手段で設定したオフセット量だけ前記第二の層の半導体チップをずらして前記第一の層の半導体チップの上に積層ボンディングする第二のボンディング手段と、
前記第二のボンディング手段によって積層ボンディングした後に前記カメラによって第二の層の半導体チップ表面の前記第二の貫通電極の画像を撮像する第三の撮像手段と、
前記第一の撮像手段によって撮像した前記第一の貫通電極の画像と前記第三の撮像手段によって撮像した前記第二の貫通電極の画像とに基づいて前記各層の半導体チップの相対位置のずれ量を検出するずれ量検出手段と、
を備えることを特徴とするボンディング装置。 - 請求項6に記載のボンディング装置であって、
前記制御部は、
前記ずれ量検出手段で検出したずれ量が第一の閾値未満で、第二の閾値以上の場合には、前記ずれ量の所定割合だけ前記オフセット量を補正するオフセット量補正手段を備えること、
を特徴とするボンディング装置。 - 第一の貫通電極が設けられる第一の層の半導体チップの上に前記第一の貫通電極に対応する位置に第二の貫通電極が設けられる第二の層の半導体チップを積層ボンディングするボンディング方法であって、
積層ボンディングする前にカメラによって第一の層の半導体チップ表面の前記第一の貫通電極の画像を撮像する第一の撮像工程と、
積層ボンディングする前に前記カメラによって撮像した第一の層の半導体チップ表面の第一のアライメントマークと積層ボンディングする前に前記カメラによって撮像した第二の層の半導体チップ裏面の第二のアライメントマークとの位置を合わせて前記第二の層の半導体チップを前記第一の層の半導体チップの上に積層ボンディングする第一のボンディング工程と、
前記第一のボンディング工程の後に前記カメラによって第二の層の半導体チップ表面の前記第二の貫通電極の画像を撮像する第二の撮像工程と、
前記第一の貫通電極の画像と前記第二の貫通電極の画像とに基づいて前記各層の半導体チップの相対位置を検出し、検出した相対位置を積層ボンディングの際のオフセット量として設定するオフセット量設定工程と、
を有することを特徴とするボンディング方法。 - 請求項8に記載のボンディング方法であって、
前記第一のアライメントマークに前記第二のアライメントマークが合う位置から前記オフセット量だけ前記第二の層の半導体チップをずらして前記第一の層の半導体チップの上に積層ボンディングする第二のボンディング工程と、
前記第二のボンディング工程の後に前記カメラによって第二の層の半導体チップ表面の前記第二の貫通電極の画像を撮像する第三の撮像工程と、
前記第一の撮像手段によって撮像した前記第一の貫通電極の画像と前記第三の撮像手段によって撮像した前記第二の貫通電極の画像とに基づいて前記各層の半導体チップの相対位置のずれ量を検出するずれ量検出工程と、
を有することを特徴とするボンディング方法。 - 請求項8または9に記載のボンディング方法であって、
前記第一の層の半導体チップと前記第二の層の半導体チップは、隣接する2つの層の各半導体チップであること、
を特徴とするボンディング方法。 - 請求項8または9に記載のボンディング方法であって、
前記第一の層の半導体チップは、初層の半導体チップであり、前記第二の層の半導体チップは、前記初層の半導体チップの上側に積層ボンディングされた他の半導体チップであること、
を特徴とするボンディング方法。
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