JP2013533628A5 - - Google Patents

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JP2013533628A5
JP2013533628A5 JP2013518511A JP2013518511A JP2013533628A5 JP 2013533628 A5 JP2013533628 A5 JP 2013533628A5 JP 2013518511 A JP2013518511 A JP 2013518511A JP 2013518511 A JP2013518511 A JP 2013518511A JP 2013533628 A5 JP2013533628 A5 JP 2013533628A5
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memory
conductive material
device level
memory cells
disposed
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JP5735107B2 (ja
JP2013533628A (ja
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JP2013518511A 2010-06-28 2011-06-24 ３次元メモリおよびその形成方法 Active JP5735107B2 (ja)

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Application Number Priority Date Filing Date Title
US12/825,211 2010-06-28
US12/825,211 US8803214B2 (en) 2010-06-28 2010-06-28 Three dimensional memory and methods of forming the same
PCT/US2011/041888 WO2012009140A2 (en) 2010-06-28 2011-06-24 Three dimensional memory and methods of forming the same

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JP2015083308A Division JP5923641B2 (ja) 2010-06-28 2015-04-15 ３次元メモリおよびその形成方法

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JP2013533628A JP2013533628A (ja) 2013-08-22
JP2013533628A5 true JP2013533628A5 (enExample) 2014-08-21
JP5735107B2 JP5735107B2 (ja) 2015-06-17

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US (9) US8803214B2 (enExample)
EP (2) EP2586060B1 (enExample)
JP (2) JP5735107B2 (enExample)
KR (2) KR102005475B1 (enExample)
CN (1) CN103038882B (enExample)
SG (3) SG10201907425TA (enExample)
WO (1) WO2012009140A2 (enExample)

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