JP2013529379A - ガス供給システムのためのコーティング方法 - Google Patents
ガス供給システムのためのコーティング方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D5/00—Protection or supervision of installations
- F17D5/005—Protection or supervision of installations of gas pipelines, e.g. alarm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/30—Processes for applying liquids or other fluent materials performed by gravity only, i.e. flow coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/22—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to internal surfaces, e.g. of tubes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D1/00—Pipe-line systems
- F17D1/02—Pipe-line systems for gases or vapours
- F17D1/04—Pipe-line systems for gases or vapours for distribution of gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
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Abstract
【選択図】図1
Description
Claims (17)
- プラズマ処理システムのチャンバ内に処理ガスを供給するよう構成されているガス供給システムのガス流路の内面を被覆するための方法であって、
(a)耐食性材料の流体前駆体を前記ガス流路内に流し、前記流体前駆体の層を堆積させて、前記ガス流路の前記内面を被覆する工程と、
(b)過剰な流体前駆体を前記内面から除去する工程と、
(c)耐食性材料コーティングを形成するために、前記流体前駆体の前記堆積された層を硬化させる工程と、
を備える、方法。 - 請求項1に記載の方法であって、
前記流体前駆体は、1または複数のメタクリレートエステルを含み、
前記ガス流路に乾燥窒素または乾燥空気を吹き込むことによって、過剰な流体前駆体が除去され、
前記流体前駆体の前記堆積された層は、少なくとも100℃の温度および1〜10Torrの圧力で前記ガス流路を真空オーブン内で焼成することによって、もしくは、少なくとも24時間、前記ガス流路を常温および常圧に維持することによって硬化される、方法。 - 請求項1に記載の方法であって、さらに、前記流体前駆体を流す前に、前記内面を洗浄し、前記内面を乾燥させる工程を備える、方法。
- 請求項3に記載の方法であって、
前記内面は、10〜20重量%の硝酸で3分間洗浄され、脱イオン水で少なくとも5分間リンスされ、
前記内面は、前記ガス流路に乾燥窒素または乾燥空気を吹き込み、真空オーブンで少なくとも120℃の温度で前記ガス流路を焼くことによって乾燥される、方法。 - 請求項1に記載の方法であって、前記ガス流路は、0.25インチ(6.35mm)以下の外径を有するステンレス鋼管の中にある、方法。
- 請求項5の方法であって、少なくとも1つのステンレス鋼ベローズが、前記ステンレス鋼管に溶接される、方法。
- 請求項6に記載の方法であって、さらに、
前記ベローズを前記管に溶接する前に、前記流体前駆体の付着を防ぐマスキング剤で前記ベローズの内面を被覆する工程と、
任意選択的に、前記硬化工程の後に、前記ベローズの前記内面から前記マスキング剤を除去する工程と、
を備える、方法。 - 請求項7に記載の方法であって、前記マスキング剤は、フォトレジスト、オイル、シラン、および/または、アルコキシシランである、方法。
- 請求項1に記載の方法であって、工程(a)〜(c)が繰り返される、方法。
- 請求項1に記載の方法であって、前記コーティングは、ハロゲン含有処理ガスに耐性を有する、方法。
- 請求項1に記載の方法であって、前記耐食性材料コーティングは、0.0014インチ(0.03556mm)から0.0034インチ(0.08636mm)の厚さを有する、方法。
- プラズマ処理システムのチャンバに処理ガスを供給するよう構成されているガス供給システムであって、ガス流路を備え、前記ガス流路の内面は、前記内面上に堆積された流体前駆体の層を硬化させることによって形成された耐食性材料コーティングで被覆されている、ガス供給システム。
- 請求項12に記載のガス供給システムであって、さらに、前記ガス流路を内側に有するステンレス鋼管に溶接された少なくとも1つのステンレス鋼ベローズを備え、
前記ベローズの内面は、前記コーティングによって被覆されていない、ガス供給システム。 - 請求項12に記載のガス供給システムであって、前記ガス流路は、0.25インチ(6.35mm)以下の外径を有するステンレス鋼管の内側にある、ガス供給システム。
- 請求項12に記載のガス供給システムであって、前記コーティングは、ハロゲン含有処理ガスに耐性を有する、ガス供給システム。
- 請求項12に記載のガス供給システムを備えるプラズマ処理システムであって、前記ガス供給システムは、前記プラズマ処理システムのチャンバ内にハロゲン含有処理ガスを供給し、前記処理ガスは、前記チャンバ内に支持された個々の半導体基板を処理するためにプラズマに励起される、プラズマ処理システム。
- 請求項16に記載のプラズマ処理システムであって、前記基板は、前記プラズマによってエッチングされる、プラズマ処理システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/766,529 | 2010-04-23 | ||
US12/766,529 US8852685B2 (en) | 2010-04-23 | 2010-04-23 | Coating method for gas delivery system |
PCT/US2011/000683 WO2011133207A2 (en) | 2010-04-23 | 2011-04-15 | A coating method for gas delivery system |
Publications (2)
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US20140366968A1 (en) | 2014-12-18 |
CN102859033B (zh) | 2015-06-03 |
SG184948A1 (en) | 2012-11-29 |
TWI538046B (zh) | 2016-06-11 |
TW201209910A (en) | 2012-03-01 |
JP5855644B2 (ja) | 2016-02-09 |
KR101787139B1 (ko) | 2017-10-18 |
SG10201503199PA (en) | 2015-06-29 |
KR20130093515A (ko) | 2013-08-22 |
US9689533B2 (en) | 2017-06-27 |
CN102859033A (zh) | 2013-01-02 |
US8852685B2 (en) | 2014-10-07 |
US20110259519A1 (en) | 2011-10-27 |
WO2011133207A3 (en) | 2012-02-23 |
WO2011133207A2 (en) | 2011-10-27 |
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