JP2013251564A - エレクトロルミネッセンス材料 - Google Patents
エレクトロルミネッセンス材料 Download PDFInfo
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- JP2013251564A JP2013251564A JP2013155227A JP2013155227A JP2013251564A JP 2013251564 A JP2013251564 A JP 2013251564A JP 2013155227 A JP2013155227 A JP 2013155227A JP 2013155227 A JP2013155227 A JP 2013155227A JP 2013251564 A JP2013251564 A JP 2013251564A
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- 239000000463 material Substances 0.000 title claims abstract description 147
- 125000005841 biaryl group Chemical group 0.000 claims abstract description 22
- 125000003118 aryl group Chemical group 0.000 claims abstract description 19
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims abstract description 15
- 125000000623 heterocyclic group Chemical group 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 abstract description 85
- 239000010410 layer Substances 0.000 description 190
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- 238000002347 injection Methods 0.000 description 75
- 239000007924 injection Substances 0.000 description 75
- -1 GaN or GaInN Chemical class 0.000 description 70
- 238000006243 chemical reaction Methods 0.000 description 68
- 238000005401 electroluminescence Methods 0.000 description 68
- 239000011777 magnesium Substances 0.000 description 43
- 238000000034 method Methods 0.000 description 42
- 229910052757 nitrogen Inorganic materials 0.000 description 41
- 229910052749 magnesium Inorganic materials 0.000 description 39
- 229910052761 rare earth metal Inorganic materials 0.000 description 34
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 32
- 150000002910 rare earth metals Chemical class 0.000 description 32
- 125000001424 substituent group Chemical group 0.000 description 32
- 239000000758 substrate Substances 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- 239000000203 mixture Substances 0.000 description 29
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- 239000013078 crystal Substances 0.000 description 12
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- 238000007740 vapor deposition Methods 0.000 description 5
- ZDZHCHYQNPQSGG-UHFFFAOYSA-N 1-naphthalen-1-ylnaphthalene Chemical group C1=CC=C2C(C=3C4=CC=CC=C4C=CC=3)=CC=CC2=C1 ZDZHCHYQNPQSGG-UHFFFAOYSA-N 0.000 description 4
- 150000000644 6-membered heterocyclic compounds Chemical class 0.000 description 4
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- 229910052684 Cerium Inorganic materials 0.000 description 4
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
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- 125000005843 halogen group Chemical group 0.000 description 4
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- 238000004020 luminiscence type Methods 0.000 description 4
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
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- 239000002904 solvent Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 4
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- AULRAJQDSBIZBZ-UHFFFAOYSA-N 1-bromo-4-naphthalen-1-ylnaphthalene Chemical group C12=CC=CC=C2C(Br)=CC=C1C1=CC=CC2=CC=CC=C12 AULRAJQDSBIZBZ-UHFFFAOYSA-N 0.000 description 3
- UOCMXZLNHQBBOS-UHFFFAOYSA-N 2-(1,3-benzoxazol-2-yl)phenol zinc Chemical compound [Zn].Oc1ccccc1-c1nc2ccccc2o1.Oc1ccccc1-c1nc2ccccc2o1 UOCMXZLNHQBBOS-UHFFFAOYSA-N 0.000 description 3
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 3
- 229910052777 Praseodymium Inorganic materials 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
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- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 3
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 3
- 150000004703 alkoxides Chemical class 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
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- 239000006081 fluorescent whitening agent Substances 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
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- 239000004973 liquid crystal related substance Substances 0.000 description 3
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- 229910052748 manganese Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
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- 235000021286 stilbenes Nutrition 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
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- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 2
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 2
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- SCZWJXTUYYSKGF-UHFFFAOYSA-N 5,12-dimethylquinolino[2,3-b]acridine-7,14-dione Chemical compound CN1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3N(C)C1=C2 SCZWJXTUYYSKGF-UHFFFAOYSA-N 0.000 description 2
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- 0 Cc(cc1)ccc1-c1nnc(-c2cc(-c3nnc(-c4ccc(*)cc4)[o]3)ccc2)[o]1 Chemical compound Cc(cc1)ccc1-c1nnc(-c2cc(-c3nnc(-c4ccc(*)cc4)[o]3)ccc2)[o]1 0.000 description 2
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- 241000284156 Clerodendrum quadriloculare Species 0.000 description 2
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- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
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- 230000007774 longterm Effects 0.000 description 2
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- 150000005309 metal halides Chemical class 0.000 description 2
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- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
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- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
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- 230000003287 optical effect Effects 0.000 description 2
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Abstract
Description
中で、ELDについて説明する。
2)有機LED(材料はトリアリールアミン誘導体やスチルベン誘導体等の有機化合物で構成され、発光機構は再結合型。有機EL(エレクトロルミネッセント)、OLEDとも呼ばれる。)
3)無機EL(材料はZnS:MnやZnS:Tb等の無機化合物で構成され、発光機構は加速電子型。有機ELDよりも歴史が古いため、こちらを単にエレクトロルミネッセンス(EL)と呼ぶ場合もある。)
この中で、本発明で言う「エレクトロルミネッセンス素子」とは1)および2)であり、「エレクトロルミネッセンス材料」とは1)および2)を構成する材料のことを示す。従って、上記3)は本発明から除外される。
(1)下記一般式(A1)で表されることを特徴とするエレクトロルミネッセンス材料。
(2)下記一般式(A2)で表されることを特徴とする前記1に記載のエレクトロルミネッセンス材料。
(3)下記一般式(A3)で表されることを特徴とする前記1又は2の何れかに記載のエレクトロルミネッセンス材料。
(4)下記一般式(B1)で表されることを特徴とするエレクトロルミネッセンス材料。
(5)下記一般式(C1)で表されることを特徴とするエレクトロルミネッセンス材料。
(6)下記一般式(D1)で表されることを特徴とするエレクトロルミネッセンス材料。
(7)下記一般式(E1)で表されることを特徴とするエレクトロルミネッセンス材料。
(8)下記一般式(F1)又は(F2)で表されることを特徴とするエレクトロルミネッセンス材料。
(10)エレクトロルミネッセンス材料の少なくとも1種及び該エレクトロルミネッセンス材料の発光を吸収し該エレクトロルミネッセンス材料より発せられる極大発光波長とは異なる極大発光波長に発光する無機系蛍光体を少なくとも1種含有することを特徴とするエレクトロルミネッセンス素子。
(11)前記無機系蛍光体がSol−Gel法により製造された無機系蛍光体であることを特徴とする前記10に記載のエレクトロルミネッセンス素子。
(12)前記無機系蛍光体の極大発光波長が400〜700nmであることを特徴とする前記10又は11に記載のエレクトロルミネッセンス素子。
(13)前記無機系発光体の少なくとも1種が極大発光波長が600〜700nmであることを特徴とする前記10〜12の何れか1項に記載のエレクトロルミネッセンス素子。
(14)エレクトロルミネッセンス材料及び該エレクトロルミネッセンス材料の発光を吸収し該エレクトロルミネッセンス材料より発せられる極大発光波長とは異なる極大発光波長に発光する希土類錯体系蛍光体を含有することを特徴とするエレクトロルミネッセンス素子。
(15)前記希土類錯体系蛍光体の極大発光波長が400〜700nmであることを特徴とする前記14に記載のエレクトロルミネッセンス素子。
(16)前記希土類錯体系発光体の少なくとも1種が極大発光波長が600〜700nmであることを特徴とする前記14又は15の何れか1項に記載のエレクトロルミネッセンス素子。
(17)前記エレクトロルミネッセンス材料の極大発光波長が430nm以下であることを特徴とする前記10〜16の何れか1項に記載のエレクトロルミネッセンス素子。
(18)前記エレクトロルミネッセンス材料の極大発光波長が400〜430nmであることを特徴とする前記17に記載のエレクトロルミネッセンス素子。
(19)前記エレクトロルミネッセンス材料が有機LEDであることを特徴とする前記10〜18の何れか1項に記載のエレクトロルミネッセンス素子。
(20)前記エレクトロルミネッセンス材料が無機LEDであることを特徴とする前記10〜18の何れか1項に記載のエレクトロルミネッセンス素子。
(21)前記エレクトロルミネッセンス材料が、前記一般式(A1)、(A2)、(A3)、(B1)、(C1)、(D1)、(E1)、(F1)、(F2)、(G1)又は(G2)で表される化合物から選ばれる少なくとも1種であることを特徴とする前記10〜20の何れか1項に記載のエレクトロルミネッセンス素子。
(22)基盤上に、エレクトロルミネッセンス材料を含有する層及び該エレクトロルミネッセンス材料から発せられる光を吸収して400〜500nmに極大発光波長を有する無機系蛍光体の少なくとも1種、501〜600nmに極大発光波長を有する無機系蛍光体の少なくとも1種及び601〜700nmに極大発光波長を有する無機系蛍光体の少なくとも1種を含有する色変換層を有することを特徴とするエレクトロルミネッセンス素子。
(23)基盤上に、エレクトロルミネッセンス材料を含有する層及び該エレクトロルミネッセンス材料から発せられる光を吸収して400〜500nmに極大発光波長を有する希土類錯体系蛍光体の少なくとも1種、501〜600nmに極大発光波長を有する希土類錯体系蛍光体の少なくとも1種及び601〜700nmに極大発光波長を有する希土類錯体系蛍光体の少なくとも1種を含有する色変換層を有することを特徴とするエレクトロルミネッセンス素子。
(24)エレクトロルミネッセンス材料から発せられる光を吸収して400〜700nmに極大発光波長を有する無機系蛍光体の少なくとも1種を含有することを特徴とする色変換フィルター。
(25)エレクトロルミネッセンス材料から発せられる光を吸収して400〜500nmに極大発光波長を有する無機系蛍光体の少なくとも1種、501〜600nmに極大発光波長を有する無機系蛍光体の少なくとも1種及び601〜700nmに極大発光波長を有する無機系蛍光体の少なくとも1種を含有することを特徴とする色変換フィルター。
(26)前記無機蛍光体がSol−Gel法により製造された無機系蛍光体であることを特徴とする前記24又は25の何れか1項に記載の色変換フィルター。
(27)エレクトロルミネッセンス材料から発せられる光を吸収して400〜700nmに極大発光波長を有する希土類錯体系蛍光体の少なくとも1種を含有することを特徴とする色変換フィルター。
(28)エレクトロルミネッセンス材料から発せられる光を吸収して400〜500nmに極大発光波長を有する希土類錯体系蛍光体の少なくとも1種、501〜600nmに極大発光波長を有する希土類錯体系蛍光体の少なくとも1種及び601〜700nmに極大発光波長を有する希土類錯体系蛍光体の少なくとも1種を含有する色変換層を有することを特徴とする色変換フィルター。
(29)Sol−Gel法により製造された無機系蛍光体を用いて赤色よりも短波長領域の光を赤色に変換することを特徴とする色変換方法。
(30)希土類錯体系蛍光体を用いて赤色よりも短波長領域の光を赤色に変換することを特徴とする色変換方法。
(31)前記希土類錯体系蛍光体の極大吸収波長が340nm以上であることを特徴とする前記30に記載の色変換方法。
(32)下記一般式(R2)で表されるアニオン性配位子を少なくとも1つ有することを特徴とする希土類錯体系蛍光体。
また、次の態様を本発明に用いることもできる。
(A)下記一般式(N1)で表されることを特徴とするエレクトロルミネッセンス材料、
3)、(B1)、(C1)、(D1)、(E1)、(F1)、(F2)で表される化合物
ならびに(G1)で表される4−ハロ−1,1’−ビナフチル誘導体を原料として用い(
G2)で表される1価のビアリール基を分子内のいずれかに有する化合物があげられる。
基板/色変換層/基板/陽極/発光層/陰極
(2)基板/色変換層/基板/陽極/正孔注入層/発光層/陰極
(3)基板/色変換層/基板/陽極/発光層/電子注入層/陰極
(4)基板/色変換層/基板/陽極/正孔注入層/発光層/電子注入層/陰極
(5)基板/陽極/発光層/陰極/色変換層/基板
(6)基板/陽極/正孔注入層/発光層/陰極/色変換層/基板
(7)基板/陽極/発光層/電子注入層/陰極/色変換層/基板
(8)基板/陽極/正孔注入層/発光層/電子注入層/陰極/色変換層/基板
ここで、色変換層と接する基板と陽極と接する基板とは、同じであっても異なっていても良く、さらに各素子の外側を基板で覆っても良い。
〔ここで、Xはアルカリ土類金属を表す。なお、Xで表されるアルカリ土類金属は単一成分でも2種類以上の混合成分でもよく、その混合比率は任意でよい。〕のようなアルカリ土類金属で置換された酸化アルミニウム、酸化ケイ素、リン酸、ハロリン酸等が代表的な結晶母体として挙げられる。
以下に本発明に好ましく使用される無機蛍光体を示すが、本発明はこれらの化合物に限定されるものではない。
[青色発光 無機蛍光化合物]
(BL−1) Sr2P2O7:Sn4+
(BL−2) Sr4Al14O25:Eu2+
(BL−3) BaMgAl10O17:Eu2+
(BL−4) SrGa2S4:Ce3+
(BL−5) CaGa2S4:Ce3+
(BL−6) (Ba、Sr)(Mg、Mn)Al10O17:Eu2+
(BL−7) (Sr、Ca、Ba、Mg)10(PO4)6Cl2:Eu2+
(BL−8) BaAl2SiO8:Eu2+
(BL−9) Sr2P2O7:Eu2+
(BL−10) Sr5(PO4)3Cl:Eu2+
(BL−11) (Sr,Ca,Ba)5(PO4)3Cl:Eu2+
(BL−12) BaMg2Al16O27:Eu2+
(BL−13) (Ba,Ca)5(PO4)3Cl:Eu2+
(BL−14) Ba3MgSi2O8:Eu2+
(BL−15) Sr3MgSi2O8:Eu2+
[緑色発光 無機蛍光化合物]
(GL−1) (BaMg)Al16O27:Eu2+,Mn2+
(GL−2) Sr4Al14O25:Eu2+
(GL−3) (SrBa)Al2Si2O8:Eu2+
(GL−4) (BaMg)2SiO4:Eu2+
(GL−5) Y2SiO5:Ce3+,Tb3+
(GL−6) Sr2P2O7−Sr2B2O5:Eu2+
(GL−7) (BaCaMg)5(PO4)3Cl:Eu2+
(GL−8) Sr2Si3O8−2SrCl2:Eu2+
(GL−9) Zr2SiO4、MgAl11O19:Ce3+,Tb3+
(GL−10) Ba2SiO4:Eu2+
(GL−11) Sr2SiO4:Eu2+
(GL−12) (BaSr)SiO4:Eu2+
[赤色発光 無機蛍光化合物]
(RL−1) Y2O2S:Eu3+
(RL−2) YAlO3:Eu3+
(RL−3) Ca2Y2(SiO4)6:Eu3+
(RL−4) LiY9(SiO4)6O2:Eu3+
(RL−5) YVO4:Eu3+
(RL−6) CaS:Eu3+
(RL−7) Gd2O3:Eu3+
(RL−8) Gd2O2S:Eu3+
(RL−9) Y(P,V)O4:Eu3+
本発明に用いられる無機蛍光体は、発光強度の観点から、製造時に機械的破砕工程を経ない、つまりビルドアップ法で合成されるものが好ましく、特にSol−Gel法等による液相法によって製造されるものが好ましい。また、組成上は無機酸化物が母体となっているものが好ましい。
Xa−(La)−(Lb)n−(Lc)−Ya
[式中、La、Lb、Lcはそれぞれ独立に2個以上の結合手を持つ原子を表わし、nは0または1を表わし、XaはLaの隣接位に配位可能な原子を有する置換基を表わし、YaはLcの隣接位に配位可能な原子を有する置換基を表わす。さらにXaの任意の部分とLaとは互いに縮合して環を形成してもよく、Yaの任意の部分とLcとは互いに縮合して環を形成してもよく、LaとLcとは互いに縮合して環を形成してもよく、さらに分子内に芳香族炭化水素環または芳香族複素環が少なくとも一つ存在する。ただし、Xa−(La)−(Lb)n−(Lc)−Yaがβ−ジケトン誘導体やβ−ケトエステル誘導体、β−ケトアミド誘導体又は前記ケトンの酸素原子を硫黄原子又は−N(R1)−に置き換えたもの、クラウンエーテルやアザクラウンエーテルまたはチアクラウンエーテルまたはクラウンエーテルの酸素原子を任意の数硫黄原子または−N(R1)−に置き換えたクラウンエーテルを表わす場合には芳香族炭化水素環または芳香族複素環は無くてもよい。]一般式(1)において、XaおよびYaで表される配位可能な原子とは、具体的には酸素原子、窒素原子、硫黄原子、セレン原子、テルル原子であり、特に酸素原子、窒素原子、硫黄原子であることが好ましい。
陽極としてガラス上にITOを150nm成膜した基板(NHテクノグラス社製NA−45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行なった。この透明支持基板を、市販の真空蒸着装置の基板ホルダーに固定し、一方、モリブデン製抵抗加熱ボートに、N,N’−ジフェニル−N,N’−ビス(3−メチルフェニル)〔1,1’−ビフェニル〕−4,4’−ジアミン(TPD)200mgを入れ、別のモリブデン製抵抗加熱ボートにp−クウオーターフェニル(PQP)200mgを入れ、さらに別のモリブデン製抵抗加熱ボートにトリス(8−ヒドロキシキノリナート)アルミニウム(Alq3)を200mg入れ、真空蒸着装置に取付けた。次いで、真空槽を4×10−4Paまで減圧した後、TPDの入った前記加熱ボートに通電して、220℃まで加熱し、蒸着速度0.1〜0.3nm/secで透明支持基板に蒸着し、膜厚60nmの正孔注入層を設けた。さらに、PQPの入った前記加熱ボートを通電して220℃まで加熱し、蒸着速度0.1〜0.3nm/secで前記正孔注入層上に蒸着して膜厚40nmの発光層を設けた。さらに、Alq3の入った前記加熱ボートを通電して250℃まで加熱し、蒸着速度0.1nm/secで前記発光層の上に蒸着して膜厚20nmの電子注入層を設けた。なお、蒸着時の基板温度は室温であった。次に、真空槽をあけ、電子注入層の上にステンレス鋼製の長方形穴あきマスクを設置し、一方、モリブデン製抵抗加熱ボートにマグネシウム3gを入れ、タングステン製の蒸着用バスケットに銀を0.5g入れ、再び真空槽を2×10−4Paまで減圧した後、マグネシウム入りのボートに通電して蒸着速度1.5〜2.0nm/secでマグネシウムを蒸着し、この際、同時に銀のバスケットを加熱し、蒸着速度0.1nm/secで銀を蒸着し、前記マグネシウムと銀との混合物からなる対向電極とすることにより、エレクトロルミネッセンス素子UV−1を作製した。
(1−1)の発光体p−クウオーターフェニル(PQP)を4,4’−ビス(2,2’−ジフェニルビニル)ビフェニル(DPVBi)に置き換えた以外は(1−1)と全く同じ方法で作製した比較用エレクトロルミネッセンス素子(B−1)を作製した。
0.016モルのアンモニアを含有するアンモニア水にエタノール150mlと水150
mlを加えアルカリ液を作製した。
平均粒径5nmのエアロジル0.16gにエタノール15gおよびγ−グリシドキシプロピルトリエトキシシラン0.22gを加えて開放系室温下1時間攪拌した。この混合物と無機蛍光体(GL−10)20gとを乳鉢に移し、よくすり混ぜた後、70℃のオーブンで2時間、さらに120℃のオーブンで2時間加熱し、表面改質した(GL−10)を得た。
無機蛍光体(RL−5)を化成オプトニクス社製KX−605(Zn2SiO4:Mn2+、平均粒径7μm、極大発光波長570nm(励起光343nm))に置き換えた以外は上記(2−2)記載の方法と全く同じ方法でKX−605の表面改質を行った。
上記の表面改質を施した赤色発光無機蛍光体(RL−5)10gに、トルエン/エタノール=1/1の混合溶液(300g)で溶解されたブチラール(BX−1)30gを加え、攪拌した後、Wet膜厚200μmでガラス上に塗布した。得られた塗布済みガラスを100℃のオーブンで4時間加熱乾燥して、色変換フィルター(F−1)を作成した。
トルエン/エタノール=1/1の混合溶液(300g)で溶解されたブチラール(BX−1)30gに希土類錯体系蛍光体(RE−17)3gを溶解し、厚さ80μmのポリエーテルスルフォン(PES)フィルム上にWet膜厚150μmで塗布し、温風乾燥して、赤色発光の色変換フィルター(F−5)を作成した。
上記(3−2)のRE−17の替わりに蛍光色素 クマリン6 2.0gと蛍光顔料ソルベントイエロー116 0.5gに替えた以外は(3−2)と同様な方法で比較となる青色光励起緑色発光の色変換フィルター(F−8)を作成した。
エレクトロルミネッセンス素子(UV−1)および比較用エレクトロルミネッセンス素子(B−1)の各々に色変換フィルターまたは比較の色変換フィルターを蛍光体層がエレクトロルミネッセンス素子の発光面と相対するように重ね、温度23℃、乾燥窒素ガス雰囲気下で12V直流電圧印加による連続点灯を行い、点灯開始時の発光効率(lm/W)および輝度の半減する時間を測定した。発光効率は試料No.7の発光効率を100とした時の相対値で表し、輝度の半減する時間は試料No.8の輝度が半減する時間を100とした相対値で表した。結果を表1に示す。
日亜化学(株)製紫外発光LED素子(UV LED Lamp)にLED素子側に蛍光体層が近づくように色変換フィルター(F−1)、(F−5)をそれぞれ重ねて電圧をかけ発光したところ輝度、色調ともに良好な赤色光を発した。同様に色変換フィルター(F−2)、(F−6)をそれぞれ重ねて電圧をかけ発光したところ輝度、色調ともに良好な緑色光を発した。同様に色変換フィルター(F−3)、(F−7)をそれぞれ重ねて電圧をかけ発光したところ輝度、色調ともに良好な青色光を発した。
実施例(1−1)の発光体p−クウオーターフェニル(PQP)を化合物N−7に置き換えた以外は実施例(1−1)と全く同じ方法で作製した比較用エレクトロルミネッセンス素子(S−N7)を作製した。
実施例(1−1)の発光体p−クウオーターフェニル(PQP)を化合物A−3に置き換えた以外は実施例(1−1)と全く同じ方法で作製した比較用エレクトロルミネッセンス素子(S−A3)を作製した。
実施例(1−1)の発光体p−クウオーターフェニル(PQP)を本発明の化合物B−1に置き換えた以外は実施例(1−1)と全く同じ方法で作製した比較用エレクトロルミネッセンス素子(S−B1)を作製した。
実施例(1−1)の発光体p−クウオーターフェニル(PQP)を化合物D−5に置き換えた以外は実施例(1−1)と全く同じ方法で作製した比較用エレクトロルミネッセンス素子(S−D5)を作製した。
実施例(1−1)の発光体p−クウオーターフェニル(PQP)を化合物F−1に置き換えた以外は実施例(1−1)と全く同じ方法で作製した比較用エレクトロルミネッセンス素子(S−F1)を作製した。
上記実施例(6−1)〜(6−5)で作成した近紫外〜紫発光のエレクトロルミネッセンス素子およびその比較として実施例(1−1)で作成した従来の発光材料を用いて作成したエレクトロルミネッセンス素子(UV−1)の各々に色変換フィルター F−2を蛍光体層がエレクトロルミネッセンス素子の発光面と相対するように重ね、温度23℃、乾燥窒素ガス雰囲気下で15V直流電圧印加による連続点灯を行い、点灯開始時の発光輝度(cd/m2)および輝度の半減する時間を測定した。発光輝度は試料No.701の発光輝度を100とした時の相対値で表し、輝度の半減する時間は試料No.701の輝度が半減する時間を100とした相対値で表した。結果を表2に示す。
実施例(8−1) 化合物C−8を使用したエレクトロルミネッセンス素子(S−C8)の作製
実施例(1−1)の発光体p−クウオーターフェニル(PQP)を化合物C−8に置き換えた以外は実施例(1−1)と全く同じ方法で作製した比較用エレクトロルミネッセンス素子(S−C8)を作製した。
実施例(1−1)の発光体p−クウオーターフェニル(PQP)を化合物E−1に置き換えた以外は実施例(1−1)と全く同じ方法で作製した比較用エレクトロルミネッセンス素子(S−E1)を作製した。
実施例(1−1)の発光体p−クウオーターフェニル(PQP)を化合物F−7に置き換えた以外は実施例(1−1)と全く同じ方法で作製した比較用エレクトロルミネッセンス素子(S−F7)を作製した。
実施例(9−1)比較のエレクトロルミネッセンス素子(CF−1)の作製
実施例(1−1)と同様な方法を用い、図101に示す構成のエレクトロルミネッセンス素子を作製した。
実施例(9−1)で作製したエレクトロルミネッセンス素子(CF−1)の第1層の正孔輸送材料であるNPBのみを表3に示す化合物に替えたエレクトロルミネッセンス素子(9201〜9214)を作製した。
実施例(9−1)および(9−2)のエレクトロルミネッセンス素子の作成において、第2層(発光層)を蒸着しない以外は同様の方法で図102に示す第1層(正孔輸送層兼発光層)と第3層(電子輸送層)の2層構成とした有機EL(9300〜9312)を作製した。
実施例(9−1)で作製したエレクトロルミネッセンス素子(CF−1)の第3層の電子輸送材料であるOXD−7のみを表5に示す化合物に替えたエレクトロルミネッセンス素子(9401〜9411)を作製した。
実施例(9−4)のエレクトロルミネッセンス素子の作成において、第2層(発光層)を蒸着しない以外は同様の方法で図103に示す第1層(正孔輸送層)と第3層(電子輸送層兼発光層)の2層構成とした有機EL(9500〜9511)を作製した。
実施例(9−1)で作製したエレクトロルミネッセンス素子(CF−1)の第3層の電子輸送材料であるOXD−7のみを表7に示す化合物に替えたエレクトロルミネッセンス素子(9601〜9605)を作製した。
実施例(9−6)で作製したエレクトロルミネッセンス素子(9601〜9605)の第2層(発光層)を取り除き、第1層(正孔輸送)と第3層(電子輸送層層兼発光層)の2層構成とした有機EL(9701〜9705)を作製した。これらの素子のITO電極を陽極、マグネシウムと銀からなる対向電極を陰極として温度23℃、乾燥窒素ガス雰囲気下で15V直流電圧印加による連続点灯を行い、点灯開始時の発光輝度(cd/m2)および輝度の半減する時間を測定した。発光輝度は試料No.9701の発光輝度を100とした時の相対値で表し、輝度の半減する時間は試料No.9701の輝度が半減する時間を100とした相対値で表した。結果を表8に示す。
化合物C−9は蛍光性ドーパントとして、従来のキナクリドンおよびN,N’−ジメチルキナクリドン(DMQA)に比べ、Alq3等の発光材料との併用で高い発光輝度と長い寿命が達成されることがわかった。
実施例(9−1)で作製したエレクトロルミネッセンス素子(CF−1)の第2層の発光材料であるZn(BOX)2のみを表9に示す化合物に替えたエレクトロルミネッセンス素子(9901〜9908)を作製した。
実施例(9−1)で作製したエレクトロルミネッセンス素子(CF−1)の第2層の発光材料であるZn(BOX)2を表10に示す化合物に替え、さらに第3層の電子輸送層を取り除いた正孔輸送層(第1層)と電子輸送層兼発光層(第2層)の2層構成のエレクトロルミネッセンス素子(91001〜91008)を作製した。
一般式(N1)で表される2−アリールフェニルピリジン誘導体は、Shuichi Oi,Susumu Fukita and YoshioInoue Chem.Comumun.,1998,2439−2440に記載された方法で合成することができる。
4−ブロモ−1,1’−ビナフチル〔化合物XX〕の合成:1,1’−ビナフチル50g (197mmol) を2000ml四つ口フラスコ内で塩化メチレン600mlに溶解させ、氷浴中において臭素3.4ml(65.6mol、3分の1当量)を塩化メチレンで10倍希釈した溶液を滴下した。滴下終了後溶液をサンプリングし、高速液体クロマトグラフィーによって反応率を確認しながら、さらに臭素溶液を3分の1当量ずつ2回加えた。その後室温で一昼夜撹拌した後、溶媒を減圧下で留去した。得られた粗生成物をアセトニトリルから再結晶を行ない、さらにメタノールによって懸濁洗浄を2回行なうことによって4−ブロモ−1,1’−ビナフチルを43.9g (67.0%) 得た。
[合成例2]
N,N’−ジフェニル−N,N’−ビナフチルベンジジン[化合物A−18]の合成:500ml三ツ口フラスコ内に4−ブロモ−1,1’−ビナフチル10g(30.0mmol) 、N,N’−ジフェニルベンジジン5.05g (15.0mmol)、銅粉末を0.48g (7.50mmol)、炭酸カリウムを4.73g (34.2mmol)、ニトロベンゼン25mlを入れ、200℃で30時間撹拌した。反応終了後トルエンを加え、濾過して無機物を除いた。次いでろ液を水洗して硫酸マグネシウムで乾燥し、溶媒を留去して、トルエン−ヘキサン混合溶媒を用いたシリカゲルカラムクロマトグラフィーにより分離精製することによりN,N’−ジフェニル−N,N’−ビナフチルベンジジンを5.40g (65.0mmol、43.0%)得た。
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1999
- 1999-12-20 US US09/466,949 patent/US6656608B1/en not_active Expired - Lifetime
- 1999-12-23 EP EP06119379A patent/EP1731585A3/en not_active Withdrawn
- 1999-12-23 DE DE69933529T patent/DE69933529T3/de not_active Expired - Lifetime
- 1999-12-23 EP EP06119376A patent/EP1764401A1/en not_active Withdrawn
- 1999-12-23 EP EP06119382A patent/EP1731586A3/en not_active Withdrawn
- 1999-12-23 EP EP99125813A patent/EP1013740B2/en not_active Expired - Lifetime
- 1999-12-24 KR KR1019990061534A patent/KR100687666B1/ko active IP Right Grant
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2003
- 2003-08-28 US US10/652,949 patent/US7264890B2/en not_active Expired - Lifetime
- 2003-09-02 US US10/653,842 patent/US20040072019A1/en not_active Abandoned
- 2003-09-04 US US10/656,098 patent/US7316851B2/en not_active Expired - Lifetime
- 2003-09-11 US US10/661,857 patent/US20040062951A1/en not_active Abandoned
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2011
- 2011-01-08 JP JP2011002574A patent/JP5545225B2/ja not_active Expired - Lifetime
- 2011-01-08 JP JP2011002575A patent/JP5545226B2/ja not_active Expired - Lifetime
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2013
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Also Published As
Publication number | Publication date |
---|---|
US7264890B2 (en) | 2007-09-04 |
EP1013740B1 (en) | 2006-10-11 |
DE69933529T2 (de) | 2007-06-21 |
EP1731586A3 (en) | 2007-03-21 |
EP1764401A1 (en) | 2007-03-21 |
JP2013258416A (ja) | 2013-12-26 |
US20040096696A1 (en) | 2004-05-20 |
EP1013740B2 (en) | 2011-01-19 |
JP5601409B2 (ja) | 2014-10-08 |
EP1731585A2 (en) | 2006-12-13 |
JP5545225B2 (ja) | 2014-07-09 |
KR20000052560A (ko) | 2000-08-25 |
JP2011122161A (ja) | 2011-06-23 |
US20040072019A1 (en) | 2004-04-15 |
JP2011127125A (ja) | 2011-06-30 |
US20040058195A1 (en) | 2004-03-25 |
KR100687666B1 (ko) | 2007-02-28 |
DE69933529T3 (de) | 2011-08-18 |
EP1013740A3 (en) | 2002-01-30 |
JP5545226B2 (ja) | 2014-07-09 |
US7316851B2 (en) | 2008-01-08 |
US6656608B1 (en) | 2003-12-02 |
DE69933529D1 (de) | 2006-11-23 |
US20040062951A1 (en) | 2004-04-01 |
JP5601408B2 (ja) | 2014-10-08 |
EP1013740A2 (en) | 2000-06-28 |
EP1731585A3 (en) | 2007-03-14 |
EP1731586A2 (en) | 2006-12-13 |
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