JP2013016782A5 - - Google Patents
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- Publication number
- JP2013016782A5 JP2013016782A5 JP2012121639A JP2012121639A JP2013016782A5 JP 2013016782 A5 JP2013016782 A5 JP 2013016782A5 JP 2012121639 A JP2012121639 A JP 2012121639A JP 2012121639 A JP2012121639 A JP 2012121639A JP 2013016782 A5 JP2013016782 A5 JP 2013016782A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- metal element
- semiconductor film
- film
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 35
- 229910052751 metal Inorganic materials 0.000 claims 23
- 239000002184 metal Substances 0.000 claims 22
- 238000004519 manufacturing process Methods 0.000 claims 10
- 230000015572 biosynthetic process Effects 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- 239000002019 doping agent Substances 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 230000000873 masking effect Effects 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012121639A JP6005401B2 (ja) | 2011-06-10 | 2012-05-29 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011129976 | 2011-06-10 | ||
| JP2011129976 | 2011-06-10 | ||
| JP2012121639A JP6005401B2 (ja) | 2011-06-10 | 2012-05-29 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015136608A Division JP6025928B2 (ja) | 2011-06-10 | 2015-07-08 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013016782A JP2013016782A (ja) | 2013-01-24 |
| JP2013016782A5 true JP2013016782A5 (enExample) | 2015-06-18 |
| JP6005401B2 JP6005401B2 (ja) | 2016-10-12 |
Family
ID=47293530
Family Applications (11)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012121639A Expired - Fee Related JP6005401B2 (ja) | 2011-06-10 | 2012-05-29 | 半導体装置の作製方法 |
| JP2015136608A Expired - Fee Related JP6025928B2 (ja) | 2011-06-10 | 2015-07-08 | 半導体装置の作製方法 |
| JP2016199903A Active JP6291552B2 (ja) | 2011-06-10 | 2016-10-11 | 半導体装置の作製方法 |
| JP2018021838A Expired - Fee Related JP6461392B2 (ja) | 2011-06-10 | 2018-02-09 | 半導体装置 |
| JP2018240815A Expired - Fee Related JP6681969B2 (ja) | 2011-06-10 | 2018-12-25 | 半導体装置 |
| JP2020052391A Active JP6875577B2 (ja) | 2011-06-10 | 2020-03-24 | 半導体装置 |
| JP2021072437A Active JP6999848B2 (ja) | 2011-06-10 | 2021-04-22 | 半導体装置 |
| JP2021207907A Active JP7354220B2 (ja) | 2011-06-10 | 2021-12-22 | 半導体装置 |
| JP2023152067A Active JP7524435B2 (ja) | 2011-06-10 | 2023-09-20 | 半導体装置 |
| JP2024113893A Active JP7739544B2 (ja) | 2011-06-10 | 2024-07-17 | 半導体装置 |
| JP2025146418A Pending JP2025175013A (ja) | 2011-06-10 | 2025-09-03 | 半導体装置の作製方法 |
Family Applications After (10)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015136608A Expired - Fee Related JP6025928B2 (ja) | 2011-06-10 | 2015-07-08 | 半導体装置の作製方法 |
| JP2016199903A Active JP6291552B2 (ja) | 2011-06-10 | 2016-10-11 | 半導体装置の作製方法 |
| JP2018021838A Expired - Fee Related JP6461392B2 (ja) | 2011-06-10 | 2018-02-09 | 半導体装置 |
| JP2018240815A Expired - Fee Related JP6681969B2 (ja) | 2011-06-10 | 2018-12-25 | 半導体装置 |
| JP2020052391A Active JP6875577B2 (ja) | 2011-06-10 | 2020-03-24 | 半導体装置 |
| JP2021072437A Active JP6999848B2 (ja) | 2011-06-10 | 2021-04-22 | 半導体装置 |
| JP2021207907A Active JP7354220B2 (ja) | 2011-06-10 | 2021-12-22 | 半導体装置 |
| JP2023152067A Active JP7524435B2 (ja) | 2011-06-10 | 2023-09-20 | 半導体装置 |
| JP2024113893A Active JP7739544B2 (ja) | 2011-06-10 | 2024-07-17 | 半導体装置 |
| JP2025146418A Pending JP2025175013A (ja) | 2011-06-10 | 2025-09-03 | 半導体装置の作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US9287407B2 (enExample) |
| JP (11) | JP6005401B2 (enExample) |
| KR (3) | KR102069385B1 (enExample) |
| TW (8) | TW202414610A (enExample) |
Families Citing this family (80)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US9112036B2 (en) | 2011-06-10 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
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| JP6013685B2 (ja) | 2011-07-22 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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| KR20220153647A (ko) * | 2009-10-29 | 2022-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
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| JP6019329B2 (ja) | 2011-03-31 | 2016-11-02 | 株式会社Ｊｏｌｅｄ | 表示装置および電子機器 |
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