JP2012506151A - プラズマ強化化学気相成長（ｐｅｃｖｄ）によって共形の非晶質炭素膜を堆積させる方法 - Google Patents

プラズマ強化化学気相成長（ｐｅｃｖｄ）によって共形の非晶質炭素膜を堆積させる方法 Download PDF

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JP2012506151A
JP2012506151A JP2011532166A JP2011532166A JP2012506151A JP 2012506151 A JP2012506151 A JP 2012506151A JP 2011532166 A JP2011532166 A JP 2011532166A JP 2011532166 A JP2011532166 A JP 2011532166A JP 2012506151 A JP2012506151 A JP 2012506151A
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amorphous carbon
substrate
processing chamber
gas
plasma
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JP2012506151A5 (enExample
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クァンドゥック ダグラス リー，
貴司 盛井
洋一 鈴木
スダ ラティ，
マーティン ジェイ シーモンズ，
ディーネッシュ パディ，
ボク ホーン キム，
シンシア パグダンガナン，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2011532166A 2008-10-14 2009-10-12 プラズマ強化化学気相成長（ｐｅｃｖｄ）によって共形の非晶質炭素膜を堆積させる方法 Ceased JP2012506151A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10534808P 2008-10-14 2008-10-14
US61/105,348 2008-10-14
PCT/US2009/060360 WO2010045153A2 (en) 2008-10-14 2009-10-12 Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (pecvd)

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JP2012506151A true JP2012506151A (ja) 2012-03-08
JP2012506151A5 JP2012506151A5 (enExample) 2013-05-23

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US (1) US8105465B2 (enExample)
JP (1) JP2012506151A (enExample)
KR (1) KR101357181B1 (enExample)
CN (1) CN102187432B (enExample)
TW (1) TWI421364B (enExample)
WO (1) WO2010045153A2 (enExample)

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KR20150041122A (ko) * 2012-08-08 2015-04-15 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱을 위한 유동성 탄소
JP2019024043A (ja) * 2017-07-24 2019-02-14 東京エレクトロン株式会社 シリコン酸化膜を除去する方法
KR20200083324A (ko) * 2018-12-31 2020-07-08 충남대학교산학협력단 탄화수소 박막, 탄화수소 박막의 제조방법 및 탄화수소 박막을 포함하는 반도체 소자
KR20200135880A (ko) * 2018-04-24 2020-12-03 어플라이드 머티어리얼스, 인코포레이티드 카본 하드-마스크의 플라즈마-강화 화학 기상 증착
JP2020536385A (ja) * 2017-10-03 2020-12-10 マトソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 有機ラジカルを使用した炭素含有膜の表面処理
JP2021019198A (ja) * 2019-07-19 2021-02-15 エーエスエム・アイピー・ホールディング・ベー・フェー トポロジー制御されたアモルファスカーボンポリマー膜の形成方法
KR20210047287A (ko) * 2018-12-31 2021-04-29 충남대학교산학협력단 탄화수소 박막의 제조방법
WO2021251800A1 (ko) * 2020-06-12 2021-12-16 충남대학교 산학협력단 고유전막 및 이를 포함하는 반도체 또는 커패시터 소자
WO2021261868A1 (ko) * 2020-06-22 2021-12-30 울산과학기술원 고유전 탄화수소 박막을 이용한 커패시터 및 이를 이용한 반도체 소자
JP2022526124A (ja) * 2019-03-18 2022-05-23 ラム リサーチ コーポレーション 高アスペクト比フィーチャのエッチング中の限界寸法制御および保護層の形成に使用される炭素ベース堆積物
JP2023504471A (ja) * 2019-12-04 2023-02-03 チャンスー フェイヴァード ナノテクノロジー カンパニー リミテッド コーティング装置及びその応用
KR20230058333A (ko) * 2020-06-22 2023-05-03 충남대학교산학협력단 비정질 탄화수소 박막의 패시베이션에 의한 전하 채널층의 전하이동도 향상 방법
JP2023541836A (ja) * 2020-09-08 2023-10-04 アプライド マテリアルズ インコーポレイテッド 間隙充填用アモルファスカーボン
JP2023553008A (ja) * 2020-12-03 2023-12-20 アプライド マテリアルズ インコーポレイテッド 応力誘起欠陥を緩和するための炭素ｃｖｄ堆積法
WO2026053570A1 (ja) * 2024-09-09 2026-03-12 東京エレクトロン株式会社 成膜方法及び成膜装置

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