JP6991323B2 - 有機ラジカルを使用した炭素含有膜の表面処理 - Google Patents
有機ラジカルを使用した炭素含有膜の表面処理 Download PDFInfo
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- JP6991323B2 JP6991323B2 JP2020519055A JP2020519055A JP6991323B2 JP 6991323 B2 JP6991323 B2 JP 6991323B2 JP 2020519055 A JP2020519055 A JP 2020519055A JP 2020519055 A JP2020519055 A JP 2020519055A JP 6991323 B2 JP6991323 B2 JP 6991323B2
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Description
本出願は、2017年10月3日に出願された“Surface Treatment of Silicon and Carbon Containing Films by Remote Plasma with Organic Precursors”という表題の米国仮出願番号第62/567295号明細書の優先権を主張する、2018年4月20日に出願された“Surface Treatment of Carbon Containing Films Using Organic Radicals”という表題の米国特許出願番号第15/958601号明細書の優先権を主張するものであり、同明細書は、あらゆる目的で参照によって本明細書に組み込まれる。
本開示は、概して、有機ラジカルを使用した被加工物の表面処理に関する。
プラズマ処理は、半導体ウェハおよび他の基板の堆積、エッチング、レジスト除去、および関連処理のために半導体産業において広く使用されている。プラズマ源(例えば、マイクロ波、ECR、誘導など)は、基板を処理するための高密度プラズマおよび反応種を生成するためのプラズマ処理のためにしばしば使用される。注入後のフォトレジスト、エッチング後の残留物、および他のマスクならびに/または材料は、プラズマ乾式ストリッププロセスを使用して除去されている。プラズマ乾式ストリッププロセスでは、遠隔のプラズマチャンバ内で生成されたプラズマからの中性粒子が分離グリッドを通過して、処理チャンバに到達し、半導体ウェハのような基板を処理する。
本開示の実施形態の態様および利点は、部分的に以下の説明に記載されるか、または以下の説明から把握され得るか、もしくは実施形態の実施を通じて把握され得る。
本明細書には、当業者に向けられた実施形態の詳細な説明が記載されており、本明細書は、添付の図面を参照する。
以下では、複数の実施形態が詳細に参照され、これらの実施形態のうちの1つまたは複数の例が図面に図示されている。それぞれの例は、本開示を限定するものとして提供されているのではなく、実施形態を説明するものとして提供されている。実際に、当業者には、本開示の範囲または精神から逸脱することなく、これらの実施形態に種々の修正および変更を加えることができることが明らかであろう。例えば、或る1つの実施形態の一部として図示または説明されている特徴を、別の実施形態と共に使用して、さらに別の実施形態を生み出すことができる。したがって、本開示の態様は、そのような修正および変更を含むことが意図されている。
Claims (25)
- 被加工物を処理するための方法であって、
前記被加工物は、半導体材料と、炭素含有層とを含み、
当該方法は、前記炭素含有層に対して表面処理プロセスを実施するステップを含み、
前記表面処理プロセスは、
第1のチャンバ内で誘導されたプラズマを用いて1つまたは複数の種を生成するステップと、
第1の混合物を生成するために、前記プラズマによって生成された前記1つまたは複数の種をフィルタリングするステップと、
第2の混合物を生成するために、1つまたは複数の炭化水素分子をフィルタリング後の前記第1の混合物に注入するステップであって、前記第2の混合物は、1つまたは複数の有機ラジカルを含む、ステップと、
第2のチャンバ内で前記炭素含有層を前記第2の混合物に曝すステップと、
を含み、
前記第1の混合物を生成するために前記プラズマによって生成された前記1つまたは複数の種は、前記第1のチャンバを前記第2のチャンバから分離する分離グリッドによってフィルタリングされ、
前記分離グリッドは、第1のグリッドプレートおよび第2のグリッドプレートを含み、前記第1のグリッドプレートは、前記1つまたは複数の種をフィルタリングして、前記第1の混合物を生成するように構成され、前記第2混合物は、前記第2のグリッドプレートを通過して前記炭素含有層に曝され、前記1つまたは複数の炭化水素分子は、前記第1のグリッドプレートと前記第2のグリッドプレートとの間に位置するガス注入源によって、フィルタリング後の前記第1の混合物に注入される、
方法。 - 前記1つまたは複数の炭化水素分子は、CnH2n+2の化学式を有し、
nは、1以上かつ10以下である、
請求項1記載の方法。 - 前記1つまたは複数の炭化水素分子は、CnH2nの化学式を有し、
nは、2以上かつ10以下である、
請求項1記載の方法。 - 1つまたは複数の有機ラジカルを、前記第1のチャンバ内で前記第2の混合物中の1つまたは複数の炭化水素分子を解離させることによって生成する、請求項1から3までのいずれか1項に記載の方法。
- 前記第1のチャンバは、分離グリッドによって前記第2のチャンバから分離されており、
前記炭化水素分子は、前記第2のチャンバ内で前記種と混合される、
請求項1から4までのいずれか1項に記載の方法。 - 前記第2の混合物は、1つまたは複数の有機ラジカルを含む、請求項1から5までのいずれか1項に記載の方法。
- 前記第2の混合物は、CH3ラジカルを含む、請求項1から5までのいずれか1項に記載の方法。
- 前記炭素含有層は、フォトレジストを含む、請求項1から7までのいずれか1項に記載の方法。
- 当該方法は、前記炭素含有層の少なくとも一部を除去するために、乾式ストリッププロセスを実施するステップを含む、請求項1から8までのいずれか1項に記載の方法。
- 前記1つまたは複数の種を、前記第1のチャンバ内のプロセスガス中で誘導された前記プラズマによって生成する、請求項1から9までのいずれか1項に記載の方法。
- 前記プロセスガスは、不活性ガスである、請求項10記載の方法。
- 前記不活性ガスは、ヘリウムである、請求項11記載の方法。
- 前記プロセスガスは、水素ガスを含み、
前記種は、水素ラジカルを含む、
請求項10記載の方法。 - 前記1つまたは複数の有機ラジカルを、誘導結合プラズマ源を使用して、前記第1のチャンバ内の前記プラズマ中で生成する、請求項10から13までのいずれか1項に記載の方法。
- 当該方法は、前記第1のチャンバを前記第2のチャンバから分離する分離グリッドを使用して、前記第1の混合物を生成するために、1つまたは複数のイオンをフィルタリングするステップを含む、請求項10から14までのいずれか1項に記載の方法。
- 前記1つまたは複数の種は、加熱されたフィラメントを使用して生成された水素ラジカルを含む、請求項1から15までのいずれか1項に記載の方法。
- 前記1つまたは複数の有機ラジカルを、分子の熱分解を使用して、またはUVアシストによる分子解離を使用して生成する、請求項1から16までのいずれか1項に記載の方法。
- 半導体被加工物を処理する方法であって、当該方法は、
被加工物上の被加工物層の表面濡れ角を変化させるために、前記被加工物に対して有機ラジカルベースの表面処理プロセスを実施するステップと、
前記有機ラジカルベースの表面処理プロセスを実施した後、前記被加工物層上にコーティング材料を堆積させるステップと、
を含み、
前記有機ラジカルベースの表面処理プロセスは、
第1のチャンバ内で誘導されたプラズマを用いて1つまたは複数の種を生成するステップと、
第1の混合物を生成するために、前記プラズマによって生成された前記1つまたは複数の種をフィルタリングするステップと、
1つまたは複数の有機ラジカルを含む第2の混合物を生成するために、1つまたは複数の炭化水素分子をフィルタリング後の前記第1の混合物に注入するステップと、
第2のチャンバ内で前記被加工物層を前記第2の混合物に曝すステップと、
を含み、
前記第1の混合物を生成するために前記プラズマによって生成された前記1つまたは複数の種は、前記第1のチャンバを前記第2のチャンバから分離する分離グリッドによってフィルタリングされ、
前記分離グリッドは、第1のグリッドプレートおよび第2のグリッドプレートを含み、前記第1のグリッドプレートは、前記1つまたは複数の種をフィルタリングして、前記第1の混合物を生成するように構成され、前記第2混合物は、前記第2のグリッドプレートを通過して前記炭素含有層に曝され、前記1つまたは複数の炭化水素分子は、前記第1のグリッドプレートと前記第2のグリッドプレートとの間に位置するガス注入源によって、フィルタリング後の前記第1の混合物に注入される、
方法。 - 前記被加工物層は、親水性の被加工物層である、請求項18記載の方法。
- 前記被加工物層は、Si、SiGe、SiN、SiO2、Al2O、TaN、TiN、W、またはCuを含む、請求項18または19記載の方法。
- 前記コーティング材料は、フォトレジストを含む、請求項18から20までのいずれか1項に記載の方法。
- 前記コーティング材料は、反射防止材料を含む、請求項18から20までのいずれか1項に記載の方法。
- 前記1つまたは複数の炭化水素分子は、CnH2n+2の化学式を有し、nは、1以上かつ10以下であるか、または
前記1つまたは複数の炭化水素分子は、CnH2nの化学式を有し、nは、2以上かつ10以下である、
請求項18から22までのいずれか1項に記載の方法。 - 前記1つまたは複数の種を、前記第1のチャンバ内のプロセスガス中で前記プラズマを誘導することによって生成する、請求項18から23までのいずれか1項に記載の方法。
- 前記プロセスガスは、不活性ガスである、請求項24記載の方法。
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