JP2020536387A - 有機ラジカルを使用したシリコンまたはシリコンゲルマニウム表面の表面処理 - Google Patents
有機ラジカルを使用したシリコンまたはシリコンゲルマニウム表面の表面処理 Download PDFInfo
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- JP2020536387A JP2020536387A JP2020519096A JP2020519096A JP2020536387A JP 2020536387 A JP2020536387 A JP 2020536387A JP 2020519096 A JP2020519096 A JP 2020519096A JP 2020519096 A JP2020519096 A JP 2020519096A JP 2020536387 A JP2020536387 A JP 2020536387A
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- Prior art keywords
- surface treatment
- silicon
- radicals
- chamber
- treatment process
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Abstract
Description
本出願は、2017年10月3日に出願された“Surface Treatment of Silicon and Carbon Containing Films by Remote Plasma with Organic Precursors”という表題の米国仮出願番号第62/567295号明細書の優先権を主張する、2018年4月20日に出願された“Surface Treatment Of Silicon Or Silicon Germanium Surfaces Using Organic Radicals”という表題の米国特許出願番号第15/958560号明細書の優先権を主張するものであり、同明細書は、あらゆる目的で参照によって本明細書に組み込まれる。
本開示は、概して、有機ラジカルを使用した被加工物の表面処理に関する。
プラズマ処理は、半導体ウェハおよび他の基板の堆積、エッチング、レジスト除去、および関連処理のために半導体産業において広く使用されている。プラズマ源(例えば、マイクロ波、ECR、誘導など)は、基板を処理するための高密度プラズマおよび反応種を生成するためのプラズマ処理のためにしばしば使用される。注入後のフォトレジスト、エッチング後の残留物、および他のマスクならびに/または材料は、プラズマ乾式ストリッププロセスを使用して除去されている。プラズマ乾式ストリッププロセスでは、遠隔のプラズマチャンバ内で生成されたプラズマからの中性粒子が分離グリッドを通過して、処理チャンバに到達し、半導体ウェハのような基板を処理する。
本開示の実施形態の態様および利点は、部分的に以下の説明に記載されるか、または以下の説明から把握され得るか、もしくは実施形態の実施を通じて把握され得る。
本明細書には、当業者に向けられた実施形態の詳細な説明が記載されており、本明細書は、添付の図面を参照する。
以下では、複数の実施形態が詳細に参照され、これらの実施形態のうちの1つまたは複数の例が図面に図示されている。それぞれの例は、本開示を限定するものとして提供されているのではなく、実施形態を説明するものとして提供されている。実際に、当業者には、本開示の範囲または精神から逸脱することなく、これらの実施形態に種々の修正および変更を加えることができることが明らかであろう。例えば、或る1つの実施形態の一部として図示または説明されている特徴を、別の実施形態と共に使用して、さらに別の実施形態を生み出すことができる。したがって、本開示の態様は、そのような修正および変更を含むことが意図されている。
Claims (24)
- 被加工物を処理するための方法であって、
前記被加工物は、半導体材料を含み、
当該方法は、前記被加工物に対して有機ラジカルベースの表面処理プロセスを実施するステップを含み、
前記有機ラジカルベースの表面処理プロセスは、
第1のチャンバ内で1つまたは複数の種を生成するステップと、
1つまたは複数の有機ラジカルを含む混合物を生成するために、1つまたは複数の炭化水素分子を前記種と混合するステップと、
第2のチャンバ内で前記半導体材料を前記混合物に曝すステップと、
を含む、
方法。 - 前記半導体材料は、シリコンを含む、請求項1記載の方法。
- 前記半導体材料は、シリコンゲルマニウムを含む、請求項1記載の方法。
- 前記1つまたは複数の有機ラジカルを、前記第1のチャンバ内で前記1つまたは複数の炭化水素分子を解離させることによって生成する、請求項1記載の方法。
- 前記1つまたは複数の炭化水素分子は、CnH2n+2の化学式を有し、
nは、1以上かつ10以下である、
請求項1記載の方法。 - 前記1つまたは複数の炭化水素分子は、CnH2nの化学式を有し、
nは、2以上かつ10以下である、
請求項1記載の方法。 - 前記1つまたは複数の有機ラジカルを、前記1つまたは複数の炭化水素分子と前記種との反応によって生成する、請求項1記載の方法。
- 前記1つまたは複数の有機ラジカルは、CH3ラジカルを含む、請求項1記載の方法。
- 前記有機ラジカルベースの表面処理プロセスは、前記半導体材料上の少なくとも一部のメチル化を結果的に生じさせる、請求項1記載の方法。
- 前記1つまたは複数の種を、前記第1のチャンバ内のプロセスガス中で誘導されたプラズマによって生成する、請求項1記載の方法。
- 前記プロセスガスは、不活性ガスである、請求項10記載の方法。
- 前記不活性ガスは、ヘリウムである、請求項11記載の方法。
- 前記プロセスガスは、水素ガスを含み、
前記種は、水素ラジカルを含む、
請求項10記載の方法。 - 前記種は、加熱されたフィラメントを使用して生成された1つまたは複数の水素ラジカルを含む、請求項1記載の方法。
- 前記1つまたは複数の有機ラジカルを、分子の熱分解を使用して、またはUVアシストによる分子解離を使用して生成する、請求項1記載の方法。
- 当該方法は、前記第1のチャンバを前記第2のチャンバから分離する分離グリッドを使用して、1つまたは複数のイオンをフィルタリングするステップを含む、請求項10記載の方法。
- 前記被加工物は、シリコン含有誘電体層を含む、請求項1記載の方法。
- 前記有機ラジカルベースの表面処理プロセスを、前記シリコン含有誘電体層に対して実施して、当該シリコン含有誘電体層の表面濡れ角を調整する、請求項17記載の方法。
- 当該方法は、前記有機ラジカルベースの表面処理プロセスを実施した後に、前記被加工物に対して湿式プロセスを実施するステップを含む、請求項18記載の方法。
- 当該方法は、前記有機ラジカルベースの表面処理プロセスを実施する前に、前記被加工物に対して湿式プロセスを実施するステップを含む、請求項18記載の方法。
- 前記シリコン含有誘電体層は、酸化シリコン層を含み、
前記酸化シリコン層におけるシリコンに対する酸素の比は、1を超える、
請求項17記載の方法。 - 前記シリコン含有誘電体層は、窒化シリコン層を含み、
前記窒化シリコン層におけるシリコンに対する窒素の比は、0.5を超える、
請求項17記載の方法。 - 半導体被加工物を処理する方法であって、
前記被加工物は、半導体材料を含み、
前記半導体材料は、シリコンまたはシリコンゲルマニウムを含み、
当該方法は、前記半導体材料に対して有機ラジカルベースの表面処理プロセスを実施するステップを含み、
前記有機ラジカルベースの表面処理プロセスは、
誘導結合プラズマ源によって不活性ガス中でプラズマを誘導することにより、プラズマチャンバ内の不活性ガス中で1つまたは複数の励起種を生成するステップと、
1つまたは複数の炭化水素分子を前記励起種と混合することにより、1つまたは複数の有機ラジカルを生成するステップであって、前記1つまたは複数の炭化水素分子は、CnH2n+2またはCnH2nの化学式を有し、nは、1以上かつ10以下である、ステップと、
分離グリッドによって前記プラズマチャンバから分離されている処理チャンバ内で、前記半導体材料を前記有機ラジカルに曝すステップと、
を含む、
方法。 - 前記1つまたは複数の有機ラジカルは、メチル(CH3)ラジカルを含む、請求項23記載の方法。
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US15/958,560 US10354883B2 (en) | 2017-10-03 | 2018-04-20 | Surface treatment of silicon or silicon germanium surfaces using organic radicals |
PCT/US2018/051699 WO2019070402A1 (en) | 2017-10-03 | 2018-09-19 | SURFACE TREATMENT OF SILICON OR SILICON SURFACES AND GERMANIUM USING ORGANIC RADICALS |
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CN113488367A (zh) * | 2020-12-14 | 2021-10-08 | 北京屹唐半导体科技股份有限公司 | 具有等离子体处理系统和热处理系统的工件处理装置 |
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TW201915211A (zh) | 2019-04-16 |
TW201928105A (zh) | 2019-07-16 |
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TWI743396B (zh) | 2021-10-21 |
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US20190103280A1 (en) | 2019-04-04 |
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CN111433895B (zh) | 2023-04-07 |
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