JP2012246216A - 基板上にナノ構造を形成させる方法及びその使用 - Google Patents

基板上にナノ構造を形成させる方法及びその使用 Download PDF

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Publication number
JP2012246216A
JP2012246216A JP2012119697A JP2012119697A JP2012246216A JP 2012246216 A JP2012246216 A JP 2012246216A JP 2012119697 A JP2012119697 A JP 2012119697A JP 2012119697 A JP2012119697 A JP 2012119697A JP 2012246216 A JP2012246216 A JP 2012246216A
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substrate
layer
patterned
aln
transition metal
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Chew Beng Soh
チューベン ソー
Wei Liu
ウェイ リウ
Soo Jin Chua
スージン チュア
Jian Wei Jayce Cheng
ジアンウェイジェイス チェン
Teng Sheng Peh
テンシェン ペー
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Drying Of Semiconductors (AREA)
JP2012119697A 2011-05-25 2012-05-25 基板上にナノ構造を形成させる方法及びその使用 Pending JP2012246216A (ja)

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US201161489810P 2011-05-25 2011-05-25
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WO2015190637A1 (ko) * 2014-06-11 2015-12-17 한국표준과학연구원 대면적의 수직 정렬된 갈륨비소 반도체 나노선 어레이 제작 공정
CN105914270A (zh) * 2016-06-28 2016-08-31 聚灿光电科技股份有限公司 硅基氮化镓led外延结构的制造方法
US9548205B2 (en) 2014-04-18 2017-01-17 Fuji Electric Co., Ltd. Method of manufacturing a semiconductor device
US9972499B2 (en) 2014-04-18 2018-05-15 Fuji Electric Co., Ltd. Method for forming metal-semiconductor alloy using hydrogen plasma
CN108922948A (zh) * 2018-08-24 2018-11-30 广东省半导体产业技术研究院 一种发光二极管结构及其制作方法
CN109338287A (zh) * 2018-08-15 2019-02-15 南京理工大学 一种织构化Ta/Ag宽温区自润滑涂层及其制备方法
CN109534684A (zh) * 2018-12-27 2019-03-29 河南豫科玻璃技术股份有限公司 一种基于纳米级无闪点防眩光技术的蚀刻玻璃及其刻蚀工艺
CN109786501A (zh) * 2018-12-11 2019-05-21 江西展宇新能源股份有限公司 一种多晶黑硅片的制绒方法
CN111362225A (zh) * 2020-03-17 2020-07-03 中国科学院半导体研究所 纳米针尖结构、复合结构及其制备方法
CN112614945A (zh) * 2020-12-16 2021-04-06 同济大学 具有沟槽阵列结构的微纳单晶柔性光电探测器及其制备
CN112820634A (zh) * 2021-01-14 2021-05-18 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法

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WO2015023760A1 (en) * 2013-08-14 2015-02-19 Board Of Regents, The University Of Texas System Methods of fabricating silicon nanowires and devices containing silicon nanowires
US20160293781A1 (en) * 2013-11-21 2016-10-06 The Hong Kong University Of Science And Technology Three dimensional anti-reflection nanocone film
CN103924192A (zh) * 2014-04-21 2014-07-16 上海理工大学 一种具有纳米微腔结构的金属银薄膜的制备方法
CN104659179A (zh) * 2015-03-10 2015-05-27 江苏新广联半导体有限公司 用于GaN基LED的抗反射透明电极结构及其制备方法
CN107425095A (zh) * 2017-05-05 2017-12-01 江南大学 一种使用Ni纳米模板制备多波段发光的InGaN/GaN量子阱结构的方法
CN108018531B (zh) * 2017-11-27 2020-04-17 天津大学 一种制备纳米多孔金属材料的方法
CN108281517B (zh) * 2018-01-26 2020-06-16 厦门市三安光电科技有限公司 一种发光二极管的制作方法
US11583954B2 (en) 2019-03-04 2023-02-21 Kabushiki Kaisha Toshiba Welding method
CN110118806A (zh) * 2019-05-29 2019-08-13 兰州大学 陶瓷管型气体传感器及其制备方法
CN112018213B (zh) * 2020-07-20 2022-03-29 烟台南山学院 一种与基底表面具有高粘附力的直立Au纳米锥的制备方法

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104216218A (zh) * 2013-05-31 2014-12-17 奈米晶光电股份有限公司 无缺陷模仁的制造方法
US9548205B2 (en) 2014-04-18 2017-01-17 Fuji Electric Co., Ltd. Method of manufacturing a semiconductor device
US9972499B2 (en) 2014-04-18 2018-05-15 Fuji Electric Co., Ltd. Method for forming metal-semiconductor alloy using hydrogen plasma
US10147789B2 (en) 2014-06-11 2018-12-04 Korea Research Institute Of Standards And Science Process for fabricating vertically-aligned gallium arsenide semiconductor nanowire array of large area
WO2015190637A1 (ko) * 2014-06-11 2015-12-17 한국표준과학연구원 대면적의 수직 정렬된 갈륨비소 반도체 나노선 어레이 제작 공정
KR20150142266A (ko) * 2014-06-11 2015-12-22 한국표준과학연구원 대면적의 수직 정렬된 갈륨비소 반도체 나노선 어레이 제작 공정
KR101588577B1 (ko) 2014-06-11 2016-01-28 한국표준과학연구원 대면적의 수직 정렬된 갈륨비소 반도체 나노선 어레이 제작 공정
CN105914270A (zh) * 2016-06-28 2016-08-31 聚灿光电科技股份有限公司 硅基氮化镓led外延结构的制造方法
CN109338287A (zh) * 2018-08-15 2019-02-15 南京理工大学 一种织构化Ta/Ag宽温区自润滑涂层及其制备方法
CN109338287B (zh) * 2018-08-15 2021-02-26 南京理工大学 一种织构化Ta/Ag宽温区自润滑涂层及其制备方法
CN108922948A (zh) * 2018-08-24 2018-11-30 广东省半导体产业技术研究院 一种发光二极管结构及其制作方法
CN108922948B (zh) * 2018-08-24 2023-11-10 广东省半导体产业技术研究院 一种发光二极管结构及其制作方法
CN109786501A (zh) * 2018-12-11 2019-05-21 江西展宇新能源股份有限公司 一种多晶黑硅片的制绒方法
CN109534684A (zh) * 2018-12-27 2019-03-29 河南豫科玻璃技术股份有限公司 一种基于纳米级无闪点防眩光技术的蚀刻玻璃及其刻蚀工艺
CN111362225A (zh) * 2020-03-17 2020-07-03 中国科学院半导体研究所 纳米针尖结构、复合结构及其制备方法
CN111362225B (zh) * 2020-03-17 2024-01-30 中国科学院半导体研究所 纳米针尖结构、复合结构及其制备方法
CN112614945A (zh) * 2020-12-16 2021-04-06 同济大学 具有沟槽阵列结构的微纳单晶柔性光电探测器及其制备
CN112820634A (zh) * 2021-01-14 2021-05-18 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法
CN112820634B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法

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CN103236395B (zh) 2016-09-28
JP2016189469A (ja) 2016-11-04
JP6257692B2 (ja) 2018-01-10
CN103236395A (zh) 2013-08-07
TW201301554A (zh) 2013-01-01
TWI562395B (en) 2016-12-11

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