JP5097291B2 - 微細凹凸表面を有したエピタキシャル基板とその製造方法 - Google Patents
微細凹凸表面を有したエピタキシャル基板とその製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 88
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229910052594 sapphire Inorganic materials 0.000 claims description 28
- 239000010980 sapphire Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 229910004613 CdTe Inorganic materials 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 5
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- 229910004219 SiNi Inorganic materials 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 10
- 238000000407 epitaxy Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 238000000089 atomic force micrograph Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910018119 Li 3 PO 4 Inorganic materials 0.000 description 3
- 229910010093 LiAlO Inorganic materials 0.000 description 3
- 229910017625 MgSiO Inorganic materials 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 235000015096 spirit Nutrition 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Description
V族化合物、あるいは、CdTe,ZnO,ZnS及び他のII‐IV族化合物は、マイクロエレクトロニックデバイスのための多種にわたる基板に使用されてきた。これらデバイスには、トランジスタ、フィールドエミッション素子、及びオプトエレクトロニックデバイスが含まれるが、これらに限定されるものではない。
一実施形態によると、結晶性基板のエピタキシャル表面は50〜350nmの平均PV値(peak-to-valley height、山から谷の高低差)を有する。
一実施形態によると、多結晶層は20〜2000nmの厚さを有する。
従来技術に比べて、本発明によるエピタキシャル基板のエピタキシャル表面は微細の凹凸を有し、かつパターニングされないが、優良な品質をもってエピタキシャル層を成長する化合物半導体材料の利点を有する。さらに、本発明によるエピタキシャル基板の製造方法は低コスト、及び製造時間短縮の利点を有する。
従来技術とは異なり、結晶性基板10のエピタキシャル表面102は微細の凹凸を有し、パターニングされていない。従来技術のようにパターニングされた表面を有するエピタキシャル表面と同様に、本発明によるエピタキシャル基板1は横方向のエピタキシーを備えた化合物半導体材料の利点を有する。
一実施形態によると、結晶性基板10のエピタキシャル表面102は平均PV値(Rz、peak-to-valley height、山から谷の高低差)が50〜350nmの範囲内にある。
実用的な用途において、結晶性基板10は、サファイア、SiC、GaN、GaAs、ZnO、Si、ScAlMgO4、SrCu2O2、YSZ(イットリア安定化ジルコニア)、LiAlO2、LiGaO2、Li2SiO3、LiGeO3、NaAlO2、NaGaO2、Na2GeO3、Na2SiO3、Li3PO4、Li3AsO4、Li3VO4、Li2MgGeO4、Li2ZnGeO4、Li2CdGeO4、Li2MgSiO4、Li2ZnSiO4、Li2CdSiO4、Na2MgGeO4、Na2ZnGeO4、及びNa2ZnSiO4、又は他の商業的に入手可能なエピタキシー材料から選択された材料からなる。
一実施形態によると、多結晶層は20〜2000nmの厚さを有する。
基板10としてサファイアを用いる場合における、多結晶層12の粒界122をエッチングするための様々なエッチング溶液、及びこれらエッチング溶液の組成が表1に記載されている。表1はセッコ(Secco)液、サートル(Sirtl)液、ライト(Wright)液、サイター(Seiter)液を含む、4つのエッチング液を列挙している。
その後、エッチングされた多結晶層12をマスクとして用いることによって、多結晶層12の粒界122内の領域をプラズマエッチングによってエッチングする。最後にエッチングされた多結晶層12を第2のウェットエッチングによって除去する。結晶性基板のエピタキシャル表面はパターニングされることがなく、かつ微細の凹凸を有している。
一実施形態において、結晶性基板10のエピタキシャル表面102は100〜400nmの範囲内の平均表面粗さ(Ra)を有する。
一実施形態において、結晶性基板10のエピタキシャル表面102は50〜350nmの範囲内の平均PV値(Rz、peak-to-valley height、山から谷の高低差)を有する。
実施する場合には、結晶性基板10のエピタキシャル表面102は多結晶層12の厚さ及
び粒界とエッチング条件を調節することによって、制御することができる。
サファイア基板を例に考えると、本発明により製造されたサファイア基板試料の形状が図3の原子間力顕微鏡(AFM)画像に示してある。エピタキシャル基板の表面形状が微細の凹凸を有し、かつパターニングされていないことを明確に把握することができる。
示し、平滑な表面のサファイア基板を有するFSS試料の光電特性よりも好適な値を示すことが証明された。
Claims (8)
- エピタキシャル表面を有し、かつサファイアからなる結晶性基板を設ける工程と、
前記結晶性基板のエピタキシャル表面に、ある材料からなる多結晶層であって、複数の不規則な形状の粒界を有する多結晶層を堆積する工程と、
複数の不規則な形状のナノスケールの多結晶アイランドであって、それぞれのナノスケールの多結晶アイランドは隣接するナノスケールの多結晶アイランドとの間にアイランド−アイランド間の領域を有する多結晶アイランド群を与えるべく、前記多結晶層の複数の不規則な形状の粒界を第1のウェットエッチングによってエッチングする工程と、
前記複数の不規則な形状のナノスケールの多結晶アイランドをマスクとして用いることによって、前記アイランド−アイランド間の領域に対応する前記エピタキシャル表面をプラズマエッチングによってエッチングすることによって、異なる深さの不規則なナノスケール凹部を与える工程と、
エッチングされた前記多結晶層を第2のウェットエッチングによって除去することによって、前記結晶性基板のエピタキシャル表面に微細の凹凸を与える工程とを備える、エピタキシャル基板の製造方法。 - 前記多結晶層を形成するための前記材料はGe、ZnO、ZnS、CdSe、CdTe、CdS、ZnSe、InAs、InP、Si、ならびに、Al、NiもしくはFeの金属、及びSiAl,SiZn、もしくはSiNiのシリサイドからなる群から選択される、請求項1に記載の方法。
- 前記結晶性基板の前記エピタキシャル表面は100〜400nmの平均表面粗さ(Ra)を有する、請求項2に記載の方法。
- 前記結晶性基板の前記エピタキシャル表面は50〜350nmの平均PV値を有する、請求項2に記載の方法。
- 前記多結晶層は、LPCVD(低圧CVD)、PECVD(プラズマCVD)、スパッタリング、及び熱蒸着からなる群から選択されるいずれかの方法によって前記結晶性基板の前記エピタキシャル表面上に堆積され、前記多結晶層は20〜2000nmの厚さを有
する、請求項2に記載の方法。 - エピタキシャル表面を有し、かつサファイアからなる結晶性基板を備え、前記エピタキシャル表面は微細の凹凸を有し、かつ異なる深さの不規則なナノスケール凹部を有している、エピタキシャル基板。
- 前記結晶性基板の前記エピタキシャル表面は100〜400nmの平均表面粗さ(Ra)を有する、請求項6に記載のエピタキシャル基板。
- 前記結晶性基板の前記エピタキシャル表面は50〜350nmの平均PV値を有する、請求項6に記載のエピタキシャル基板。
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TW099123227A TWI450323B (zh) | 2010-02-26 | 2010-07-15 | 具有奈米尺度高低不平的表面之磊晶基材及其製造方法 |
TW099123227 | 2010-07-15 |
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JP2012023365A JP2012023365A (ja) | 2012-02-02 |
JP5097291B2 true JP5097291B2 (ja) | 2012-12-12 |
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US (2) | US9068279B2 (ja) |
JP (1) | JP5097291B2 (ja) |
KR (1) | KR101255463B1 (ja) |
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TWI528580B (zh) * | 2012-03-30 | 2016-04-01 | 聖戈班晶體探測器公司 | 形成獨立式半導體晶圓之方法 |
US9721767B2 (en) * | 2012-08-21 | 2017-08-01 | Regents Of The University Of Minnesota | Embedded mask patterning process for fabricating magnetic media and other structures |
US10347467B2 (en) | 2015-08-21 | 2019-07-09 | Regents Of The University Of Minnesota | Embedded mask patterning process for fabricating magnetic media and other structures |
US11370076B2 (en) * | 2016-02-23 | 2022-06-28 | Panasonic Intellectual Property Management Co., Ltd. | RAMO4 substrate and manufacturing method thereof |
JP6319598B2 (ja) * | 2016-02-23 | 2018-05-09 | パナソニックIpマネジメント株式会社 | Ramo4基板およびその製造方法 |
CN107099844B (zh) * | 2016-02-23 | 2021-01-05 | 松下知识产权经营株式会社 | Ramo4基板及其制造方法 |
US10350725B2 (en) * | 2016-02-23 | 2019-07-16 | Panasonic Intellectual Property Management Co., Ltd. | RAMO4 substrate and manufacturing method thereof |
FR3048547B1 (fr) | 2016-03-04 | 2018-11-09 | Saint-Gobain Lumilog | Procede de fabrication d'un substrat semi-conducteur |
US10304740B2 (en) * | 2016-12-15 | 2019-05-28 | Panasonic Intellectual Property Management Co., Ltd. | RAMO4 monocrystalline substrate |
CN107382299A (zh) * | 2017-08-08 | 2017-11-24 | 电子科技大学 | 一种低介微波介质陶瓷的低温制备方法 |
US11894313B2 (en) * | 2020-10-27 | 2024-02-06 | Texas Instruments Incorporated | Substrate processing and packaging |
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TW200729325A (en) * | 2006-01-18 | 2007-08-01 | Univ Nat Cheng Kung | Method for transferring nano-imprint pattern by using wet etching |
US8241423B2 (en) * | 2006-09-29 | 2012-08-14 | Sumco Techxiv Corporation | Silicon single crystal substrate and manufacture thereof |
GB0702560D0 (en) * | 2007-02-09 | 2007-03-21 | Univ Bath | Production of Semiconductor devices |
US20080277686A1 (en) * | 2007-05-08 | 2008-11-13 | Huga Optotech Inc. | Light emitting device and method for making the same |
JP2009135474A (ja) * | 2007-10-31 | 2009-06-18 | Mitsubishi Chemicals Corp | エッチング方法およびそれを用いた光/電子デバイスの製造方法 |
JP5343860B2 (ja) * | 2007-12-28 | 2013-11-13 | 三菱化学株式会社 | GaN系LED素子用電極およびGaN系LED素子ならびにそれらの製造方法。 |
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KR20120007966A (ko) | 2012-01-25 |
JP2012023365A (ja) | 2012-02-02 |
KR101255463B1 (ko) | 2013-04-16 |
US9068279B2 (en) | 2015-06-30 |
US20120015143A1 (en) | 2012-01-19 |
TWI450323B (zh) | 2014-08-21 |
US20140220301A1 (en) | 2014-08-07 |
TW201130017A (en) | 2011-09-01 |
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