TWI450323B - 具有奈米尺度高低不平的表面之磊晶基材及其製造方法 - Google Patents
具有奈米尺度高低不平的表面之磊晶基材及其製造方法 Download PDFInfo
- Publication number
- TWI450323B TWI450323B TW099123227A TW99123227A TWI450323B TW I450323 B TWI450323 B TW I450323B TW 099123227 A TW099123227 A TW 099123227A TW 99123227 A TW99123227 A TW 99123227A TW I450323 B TWI450323 B TW I450323B
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- Prior art keywords
- lithium
- oxide
- sodium
- epitaxial
- substrate
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims description 100
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000000463 material Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 41
- 239000011734 sodium Substances 0.000 claims description 30
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 29
- 229910052594 sapphire Inorganic materials 0.000 claims description 28
- 239000010980 sapphire Substances 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 20
- -1 LiGaO 2 ) Chemical compound 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 10
- ANBBXQWFNXMHLD-UHFFFAOYSA-N aluminum;sodium;oxygen(2-) Chemical compound [O-2].[O-2].[Na+].[Al+3] ANBBXQWFNXMHLD-UHFFFAOYSA-N 0.000 claims description 10
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 10
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 10
- 229910052708 sodium Inorganic materials 0.000 claims description 10
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 claims description 10
- 239000005083 Zinc sulfide Substances 0.000 claims description 9
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 9
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 6
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910018119 Li 3 PO 4 Inorganic materials 0.000 claims description 5
- 229910017625 MgSiO Inorganic materials 0.000 claims description 5
- NMLBCZVFVCBTSO-UHFFFAOYSA-N [Ge]=O.[Cd].[Li] Chemical compound [Ge]=O.[Cd].[Li] NMLBCZVFVCBTSO-UHFFFAOYSA-N 0.000 claims description 5
- SAEMIQYJFXKDMX-UHFFFAOYSA-N [Ge]=O.[Mg].[Li] Chemical compound [Ge]=O.[Mg].[Li] SAEMIQYJFXKDMX-UHFFFAOYSA-N 0.000 claims description 5
- LULYPXLORIIBFP-UHFFFAOYSA-N [Ge]=O.[Mg].[Na] Chemical compound [Ge]=O.[Mg].[Na] LULYPXLORIIBFP-UHFFFAOYSA-N 0.000 claims description 5
- BEIGBGLXBWDILI-UHFFFAOYSA-N [Ge]=O.[Zn].[Li] Chemical compound [Ge]=O.[Zn].[Li] BEIGBGLXBWDILI-UHFFFAOYSA-N 0.000 claims description 5
- PLYOSVXLNHGKJX-UHFFFAOYSA-N [Ge]=O.[Zn].[Na] Chemical compound [Ge]=O.[Zn].[Na] PLYOSVXLNHGKJX-UHFFFAOYSA-N 0.000 claims description 5
- RLTFLELMPUMVEH-UHFFFAOYSA-N [Li+].[O--].[O--].[O--].[V+5] Chemical compound [Li+].[O--].[O--].[O--].[V+5] RLTFLELMPUMVEH-UHFFFAOYSA-N 0.000 claims description 5
- FKQOMXQAEKRXDM-UHFFFAOYSA-N [Li].[As] Chemical compound [Li].[As] FKQOMXQAEKRXDM-UHFFFAOYSA-N 0.000 claims description 5
- OHOIHSTWKIMQNC-UHFFFAOYSA-N [Li].[P]=O Chemical compound [Li].[P]=O OHOIHSTWKIMQNC-UHFFFAOYSA-N 0.000 claims description 5
- YJSAVIWBELEHDD-UHFFFAOYSA-N [Li].[Si]=O Chemical compound [Li].[Si]=O YJSAVIWBELEHDD-UHFFFAOYSA-N 0.000 claims description 5
- PXPXIDNPCJNLPF-UHFFFAOYSA-N [Si]=O.[Zn].[Li] Chemical compound [Si]=O.[Zn].[Li] PXPXIDNPCJNLPF-UHFFFAOYSA-N 0.000 claims description 5
- PHTXUCDWBHGJRG-UHFFFAOYSA-N [Si]=O.[Zn].[Na] Chemical compound [Si]=O.[Zn].[Na] PHTXUCDWBHGJRG-UHFFFAOYSA-N 0.000 claims description 5
- 229910000413 arsenic oxide Inorganic materials 0.000 claims description 5
- 229960002594 arsenic trioxide Drugs 0.000 claims description 5
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 5
- JOMFQUQEGVFPCT-UHFFFAOYSA-N dilithium;dioxido(oxo)germane Chemical compound [Li+].[Li+].[O-][Ge]([O-])=O JOMFQUQEGVFPCT-UHFFFAOYSA-N 0.000 claims description 5
- FNIHDXPFFIOGKL-UHFFFAOYSA-N disodium;dioxido(oxo)germane Chemical compound [Na+].[Na+].[O-][Ge]([O-])=O FNIHDXPFFIOGKL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- YFKPABFAJKUPTN-UHFFFAOYSA-N germanium lithium Chemical compound [Li].[Ge] YFKPABFAJKUPTN-UHFFFAOYSA-N 0.000 claims description 5
- 229910001386 lithium phosphate Inorganic materials 0.000 claims description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 229910001388 sodium aluminate Inorganic materials 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 5
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 claims description 5
- VKJKOXNPYVUXNC-UHFFFAOYSA-K trilithium;trioxido(oxo)-$l^{5}-arsane Chemical compound [Li+].[Li+].[Li+].[O-][As]([O-])([O-])=O VKJKOXNPYVUXNC-UHFFFAOYSA-K 0.000 claims description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 5
- YEJVYBNCFIBFNC-UHFFFAOYSA-N [Ge]=O.[Na] Chemical compound [Ge]=O.[Na] YEJVYBNCFIBFNC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000686 lithium vanadium oxide Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 229910010093 LiAlO Inorganic materials 0.000 claims 2
- HHCSGGOACHBFGI-UHFFFAOYSA-N [Si]=O.[Cd].[Li] Chemical compound [Si]=O.[Cd].[Li] HHCSGGOACHBFGI-UHFFFAOYSA-N 0.000 claims 2
- QBNCXPVRHRPACZ-UHFFFAOYSA-N [Si]=O.[Mg].[Li] Chemical compound [Si]=O.[Mg].[Li] QBNCXPVRHRPACZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052797 bismuth Inorganic materials 0.000 claims 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 2
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 claims 2
- 229910004613 CdTe Inorganic materials 0.000 claims 1
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 1
- 239000004115 Sodium Silicate Substances 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000001788 irregular Effects 0.000 claims 1
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 claims 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims 1
- 229910052912 lithium silicate Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052911 sodium silicate Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 10
- 238000000407 epitaxy Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 7
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000000089 atomic force micrograph Methods 0.000 description 3
- ADCXHZZSUADYMI-UHFFFAOYSA-N cadmium lithium Chemical compound [Li].[Cd] ADCXHZZSUADYMI-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000010420 art technique Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- GCICAPWZNUIIDV-UHFFFAOYSA-N lithium magnesium Chemical compound [Li].[Mg] GCICAPWZNUIIDV-UHFFFAOYSA-N 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 1
- NZIHMSYSZRFUQJ-UHFFFAOYSA-N 6-chloro-1h-benzimidazole-2-carboxylic acid Chemical compound C1=C(Cl)C=C2NC(C(=O)O)=NC2=C1 NZIHMSYSZRFUQJ-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910004219 SiNi Inorganic materials 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- CNMVCNSEVZTLMD-UHFFFAOYSA-N [Li][Mg][Si] Chemical compound [Li][Mg][Si] CNMVCNSEVZTLMD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
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Description
本發明係關於一種磊晶基材(epitaxial substrate)及其製造方法,並且特別地,本發明是關於一種具有奈米尺度高低不平且非圖案化的表面(nano-rugged and non-patterned surface)之磊晶基材及其製造方法。
化合物半導體材料,例如,氮化鎵(GaN)、氮化鋁鎵(AlGaN)、氮化鋁銦鎵(AlInGaN)等III-V族化合物,以及碲化镉(CdTe)、氧化鋅(ZnO)及硫化鋅(ZnS)等II-VI族化合物,已被廣泛地檢視適合做為微電子元件的基材材料,包括但不限於電晶體管、場發射器以及光電元件,等。
以氮化鎵為基礎的微電子元件為例,其在製造上一個主要問題在於製造的氮化鎵半導體層須具有低的缺陷密度(defect density),以確保微電子元件的效能。據了解,缺陷密度的貢獻者之一是氮化鎵層與其上生長的基材之間的晶格不匹配(lattice mismatch)。因此,雖然氮化鎵層已經可以在藍寶石基材(sapphire substrate)上生長,已為眾所周知的,藉由在形成在碳化矽基材上之氮化鋁緩衝層上生長氮化鎵層,可以降低缺陷密度,特別是穿透差排(threading dislocation)的密度。儘管有這些長足進步,持續降低缺陷密度仍是研究上想達成的目標。
也為眾所周知的,藉由具有圖案化表面的基材提供利於磊晶的從優取向,控制磊晶條件來達成橫向磊晶(lateral epitaxy),進而降低缺陷密度或控制缺陷。例如,氮化鎵半導體層藉由橫向磊晶方式形成於具圖案化表面之藍寶石基材上,能控制差排橫向延伸,以降低穿透差排的密度。
然而,製造具有圖案化表面的磊晶基材之先前技術皆須利用黃光微影製程(photolithography process)。顯見地,製造具有圖案化表面的磊晶基材之先前技術其製造成本高、生產速度慢。
因此,本發明之主要目的在於提供一種磊晶基材及其製造方法。特別地,根據本發明之磊晶基材並不具有圖案化表面,但其也具有協助化合物半導體材料橫向磊晶的功效,以成長具良好品質的磊晶層。並且,根據本發明之製造方法具有製造成本低、生產快速的優點。
根據本發明之一較佳具體實施例之磊晶基材,其包含一晶體基材(crystalline substrate)。該晶體基材具有一磊晶表面。特別地,該晶體基材之該磊晶表面為奈米尺度高低不平且非圖案化的表面。
根據本發明之一較佳具體實施例之製造一磊晶基材之方法,其首先係製備由一晶體基材,該晶體基材具有一磊晶表面。接著,根據本發明之方法係於該晶體基材之該磊晶表面上,沉積一多晶材料層(ploy-crystalline material layer)。接著,根據本發明之方法係藉由一第一濕式蝕刻製程,蝕刻該多晶材料層之晶界(grain boundary)。接著,根據本發明之方法係以該經蝕刻的多晶材料層做為一遮罩(mask),藉由一電漿蝕刻製程,蝕刻該經蝕刻的多晶材料層之晶界內區域。最後,根據本發明之方法係藉由一第二濕式蝕刻製程,去除蝕刻該經蝕刻的多晶材料層,其中該晶體基材之該磊晶表面為奈米尺度高低不平且非圖案化的表面。
於一具體實施例中,該晶體基材之該磊晶表面其平均表面粗糙度Ra值範圍從100nm至400nm。
於一具體實施例中,該晶體基材之該磊晶表面其平均峰谷高度Rz值範圍從50nm至350nm。
於實際應用中,形成該晶體基材之材料可以是藍寶石(sapphire)、碳化矽(SiC)、氮化鎵(GaN)、砷化鎵(GaAs)、氧化鋅(ZnO)、矽(Si)、ScAlMgO4
、SrCu2
O2
、YSZ(Yttria-Stabilized Zirconia)、鋁酸鋰(Lithium Aluminum Oxide,LiAlO2
)、鎵酸鋰(Lithium Gallium Oxide,LiGaO2
)、矽酸鋰(Lithium Silicon Oxide,Li2
SiO3
)、鍺酸鋰(Lithium Germanium Oxide,LiGeO3
)、鋁酸鈉(Sodium Aluminum Oxide,NaAlO2
)、鎵酸鈉(Sodium Gallium Oxide,NaGaO2
)、鍺酸鈉(Sodium Germanium Oxide,Na2
GeO3
)、矽酸鈉(Sodium Silicon Oxide,Na2
SiO3
)、磷酸鋰(Lithium Phosphor Oxide,Li3
PO4
)、砷酸鋰(Lithium Arsenic Oxide,Li3
AsO4
)、釩酸鋰(Lithium Vanadium Oxide,Li3
VO4
)、Li2
MgGeO4
(Lithium Magnesium Germanium Oxide)、Li2
ZnGeO4
(Lithium Zinc Germanium Oxide)、Li2
CdGeO4
(Lithium Cadmium Germanium Oxide)、Li2
MgSiO4
(Lithium Magnesium Silicon Oxide)、Li2
ZnSiO4
(Lithium Zinc Silicon Oxide)、Li2
CdSiO4
(Lithium Cadmium Silicon Oxide)、Na2
MgGeO4
(Sodium Magnesium Germanium Oxide)、Na2
ZnGeO4
(Sodium Zinc Germanium Oxide)、Na2
ZnSiO4
(Sodium Zinc Silicon Oxide),或其他商用供磊晶用之材料。
於實際應用中,形成該多晶材料層之材料可以是鍺(Ge)、氧化鋅(ZnO)、硫化鋅(ZnS)、硒化鎘(CdSe)、碲化鎘(CdTe)、硫化鎘(CdS)、硒化鋅(ZnSe)、砷化銦(InAs)、磷化銦(InP)、矽(Si)或金屬/矽化物(metal/silicide)。
於一具體實施例中,該多晶材料層可以藉由一低壓化學氣相沉積製程(low pressure chemical vapor deposition,LPCVD)、一電漿輔助化學氣相沉積製程(plasma enhanced chemical vapor deposition,PECVD)、一濺鍍製程(sputtering)或一熱蒸鍍製程(thermal deposition)沉積於該晶體基材之該磊晶表面上。
於一具體實施例中,該多晶材料層具有範圍從20nm至2000nm之厚度。
與先前技術不同處,根據本發明之磊晶基材的磊晶表面為奈米尺度高低不平且非圖案化的表面,並且有助於化合物半導體材料在其上成長品質良好的磊晶層。並且,根據本發明之製造方法具有製造成本低、生產快速的優點。
關於本發明之優點與精神可以藉由以下的發明詳述及所附圖式得到進一步的瞭解。
請參閱圖一,圖一係以截面視圖示意地繪示根據本發明之一較佳具體實施例之一磊晶基材1。該磊晶基材1可以供一化合物半導體材料磊晶之用,例如,氮化鎵、氮化鋁鎵、氮化鋁銦鎵等III-V族化合物,或碲化镉、氧化鋅、硫化鋅等II-VI族化合物。
如圖一所示,根據本發明之磊晶基材1包含一晶體基材10。該晶體基材10具有一磊晶表面102。
與先前技術不同之處,該晶體基材10之磊晶表面102為奈米尺度高低不平且非圖案化的表面。須強調的是,與先前技術之具有圖案化表面的磊晶基材相同地,根據本發明之磊晶基材1一樣具有協助化合物半導體材料橫向磊晶的功效。
於一具體實施例中,該晶體基材10之該磊晶表面102其平均表面粗糙度Ra值範圍從100nm至400nm。
於一具體實施例中,該晶體基材10之該磊晶表面102其平均峰谷高度Rz值範圍從50nm至350nm。
於實際應用中,形成該晶體基材10之材料可以是藍寶石(sapphire)、碳化矽(SiC)、氮化鎵(GaN)、砷化鎵(GaAs)、氧化鋅(ZnO)、矽(Si)、ScAlMgO4
、SrCu2
O2
、YSZ(Yttria-Stabilized Zirconia)、鋁酸鋰(Lithium Aluminum Oxide,LiAlO2
),鎵酸鋰(Lithium Gallium Oxide,LiGaO2
)、矽酸鋰(Lithium Silicon Oxide,Li2
SiO3
)、鍺酸鋰(Lithium Germanium Oxide,LiGeO3
)、鋁酸鈉(Sodium Aluminum Oxide,NaAlO2
)、鎵酸鈉(Sodium Gallium Oxide,NaGaO2
)、鍺酸鈉(Sodium Germanium Oxide,Na2
GeO3
)、矽酸鈉(Sodium Silicon Oxide,Na2
SiO3
)、磷酸鋰(Lithium Phosphor Oxide,Li3
PO4
)、砷酸鋰(Lithium Arsenic Oxide,Li3
AsO4
)、釩酸鋰(Lithium Vanadium Oxide,Li3
VO4
)、Li2
MgGeO4
(Lithium Magnesium Germanium Oxide)、Li2
ZnGeO4
(Lithium Zinc Germanium Oxide)、Li2
CdGeO4
(Lithium Cadmium Germanium Oxide)、Li2
MgSiO4
(Lithium Magnesium Silicon Oxide)、Li2
ZnSiO4
(Lithium Zinc Silicon Oxide)、Li2
CdSiO4
(Lithium Cadmium Silicon Oxide)、Na2
MgGeO4
(Sodium Magnesium Germanium Oxide)、Na2
ZnGeO4
(Sodium Zinc Germanium Oxide)、Na2
ZnSiO4
(Sodium Zinc Silicon Oxide),或其他商用供磊晶用之材料。
請參閱圖二A至圖二C以及圖一,該等圖式係以截面視圖示意地繪示根據本發明之一較佳具體實施例之製造如圖一所示之磊晶基材1的方法。
如圖二A所示,首先,根據本發明之方法係製備一晶體基材10。該晶體基材10具有一磊晶表面102。
於實際應用中,形成該晶體基材10之材料可以是藍寶石(sapphire)、碳化矽(SiC)、氮化鎵(GaN)、砷化鎵(GaAs)、氧化鋅(ZnO)、矽(Si)、ScAlMgO4
、SrCu2
O2
、YSZ(Yttria-Stabilized Zirconia)、鋁酸鋰(Lithium Aluminum Oxide,LiAlO2
)、鎵酸鋰(Lithium Gallium Oxide,LiGaO2
)、矽酸鋰(Lithium Silicon Oxide,Li2
SiO3
)、鍺酸鋰(Lithium Germanium Oxide,LiGeO3
)、鋁酸鈉(Sodium Aluminum Oxide,NaAlO2
)、鎵酸鈉(Sodium Gallium Oxide,NaGaO2
)、鍺酸鈉(Sodium Germanium Oxide,Na2
GeO3
)、矽酸鈉(Sodium Silicon Oxide,Na2
SiO3
)、磷酸鋰(Lithium Phosphor Oxide,Li3
PO4
)、砷酸鋰(Lithium Arsenic Oxide,Li3
AsO4
)、釩酸鋰(Lithium Vanadium Oxide,Li3
VO4
)、Li2
MgGeO4
(Lithium Magnesium Germanium Oxide)、Li2
ZnGeO4
(Lithium Zinc Germanium Oxide)、Li2
CdGeO4
(Lithium Cadmium Germanium Oxide)、Li2
MgSiO4
(Lithium Magnesium Silicon Oxide)、Li2
ZnSiO4
(Lithium Zinc Silicon Oxide)、Li2
CdSiO4
(Lithium Cadmium Silicon Oxide)、Na2
MgGeO4
(Sodium Magnesium Germanium Oxide)、Na2
ZnGeO4
(Sodium Zinc Germanium Oxide)、Na2
ZnSiO4
(Sodium Zinc Silicon Oxide),或其他商用供磊晶用之材料。
接著,根據本發明之方法係於該晶體基材10之該磊晶表面102上,沉積一多晶材料層12,如圖二B所示。同樣示於圖二B,該多晶材料層12具有晶界122。
於實際應用中,形成該多晶材料層之材料可以是鍺(Ge)、氧化鋅(ZnO)、硫化鋅(ZnS)、硒化鎘(CdSe)、碲化鎘(CdTe)、硫化鎘(CdS)、硒化鋅(ZnSe)、砷化銦(InAs)、磷化銦(InP)、矽(Si)或金屬/矽化物(metal/silicide),當中金屬可以是鋁(Al)、鎳(Ni)、鐵(Fe)等,矽化物可以是矽化鋁(SiAl)、矽化鋅(SiZn)、矽化鎳(SiNi)等。
於一具體實施例中,該多晶材料層12可以藉由低壓化學氣相沉積製程(LPCVD)、電漿輔助化學氣相沉積製程(PECVD)、濺鍍製程或熱蒸鍍製程沉積於該晶體基材10之該磊晶表面102上。
於一具體實施中,該多晶材料層12具有範圍從20nm至2000nm之厚度。
接著,根據本發明之方法係藉由一第一濕式蝕刻製程,蝕刻該多晶材料層12之晶界122。該多晶材料層12經蝕刻後的截面示意圖請見圖二C。
於一案例中,以藍寶石為基材,可做為蝕刻該多晶材料層12之晶界122的蝕刻液的種類及其成份列舉於圖三。圖三列出Secco、Sirtl、Wright以及Seiter四種蝕刻液。此外,由於圖三中所列舉的蝕刻液並不會對藍寶石基材等侵蝕,因此,該等蝕刻液可以蝕刻該多晶材料層12之晶界122至藍寶石基材10的磊晶表面102露出。也可以視情況,該等蝕刻液僅蝕刻該多晶材料層12之晶界122至某深度,不致讓藍寶石基材10的磊晶表面102露出。
接著,根據本發明之方法係以該經蝕刻的多晶材料層12做為一遮罩,藉由一電漿蝕刻製程,蝕刻該經蝕刻的多晶材料層12之晶界122內區域。最後,根據本發明之方法係藉由一第二濕式蝕刻製程,去除蝕刻該經蝕刻的多晶材料層12,即獲得如圖一所示之磊晶基材10,其中該晶體基材10之該磊晶表面102為奈米尺度高低不平且非圖案化的表面。
實務上,該第二濕式蝕刻製程所採用的蝕刻液與該第一濕式蝕刻製程所採用的蝕刻液相同。
於一具體實施例中,該晶體基材之該磊晶表面其平均表面粗糙度Ra值範圍從100nm至400nm。
於一具體實施例中,該晶體基材之該磊晶表面其平均峰谷高度Rz值範圍從50nm至350nm。
實務上,該晶體基材之該磊晶表面之Ra值及Rz值的控制,可以藉由控制該多晶材料層12之厚度與晶粒尺寸以及蝕刻條件來達成。
以藍寶石基材為例,根據本發明所製造之藍寶石基材之樣本其表面型態請見圖四之原子力顯微鏡(AFM)照片所示。顯見地,根據本發明之磊晶基材的表面型態呈現奈米尺度高低不平且非圖案化的表面。
根據本發明所製造之藍寶石基材樣本(樣本標註為NRSS),在其磊晶表面上生長一層未摻雜氮化鎵層(標註為u-GaN)的穿透式電子顯微鏡(TEM)照片請見圖五所示。從圖五可清楚看出,未摻雜氮化鎵層的差排密度小,且差排為橫向延伸而非穿透差排。
上述NRSS樣本其上生長一層未摻雜氮化鎵層之原子力顯微鏡照片請見圖六A所示。以KOH溶液在180℃蝕刻NRSS樣本其上生長的未摻雜氮化鎵層,蝕刻時間為一分鐘,其表面的掃描式電子顯微鏡(SEM)照片請見圖六B。圖六B中的蝕刻孔洞即是穿透差排的證據。經統計估算,上述NRSS樣本其上生長一層未摻雜氮化鎵層的穿透差排密度約為3.6×106
cm-2
。做為對照,一具平整表面的藍寶石基材於其上生長一層未摻雜氮化鎵層之原子力顯微鏡照片請見圖六C所示。顯見地,與圖六A相較,圖六C的表面較不平整。經統計估算,該具平整表面的藍寶石基材其上生長一層未摻雜氮化鎵層的穿透差排密度約為1×109
cm-2
。顯見地,與具有平整磊晶表面之磊晶基材相比較,根據本發明之磊晶基材可以降低缺陷密度,特別是穿透差排的密度。
與具有圖案化表面的磊晶基材之先前技術相同處,根據本發明之具有奈米尺度高低不平且非圖案化的表面之磊晶基材其也具有協助化合物半導體橫向磊晶的功效,以降低缺陷密度、提升磊晶品質。一根據本發明所製造具有奈米尺度高低不平且非圖案化的表面之藍寶石基材於其上生長氮化鎵半導體層後所得樣本(樣本標註為NRSS),其所測得的光電性質,請見圖七所示。圖七同樣列出一具有圖案化表面之藍寶石基材於其上生長氮化鎵半導體層後所得樣本(樣本標註為PSS)其所測得的光電性質,以供對照。圖七同樣列出一具有平整表面之藍寶石基材於其上生長氮化鎵半導體層後所得樣本(樣本標註為FSS)其所測得的光電性質,以供對照。
從圖七所列光電性質可清楚看出,根據本發明之藍寶石基材其後製磊晶之樣本(NRSS)的光電性質接近具有圖案化表面之藍寶石基材其後製磊晶之樣本(PSS)的光電性質,並且優於具有平整表面之藍寶石基材其後製磊晶之樣本(FSS)的光電性質。
須強調的是,與先前技術不同之處,根據本發明之磊晶基材製造方法無須黃光微影製程,也無導入複雜製程,因此,顯見地,根據本發明之製造方法具有製造成本低、生產快速的優點。
藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。因此,本發明所申請之專利範圍的範疇應該根據上述的說明作最寬廣的解釋,以致使其涵蓋所有可能的改變以及具相等性的安排。
1...磊晶基材
10...晶體基材
102...晶體基材的磊晶表面
12...多晶材料層
122...多晶材料之晶界
圖一係示意地繪示根據本發明之一較佳具體實施例之具有奈米尺度高低不平且非圖案化的表面之磊晶基材1。
圖二A至圖二C係示意地繪示根據本發明之一較佳具體實施例之製造如圖一所示之磊晶基材1的方法。
圖三係列舉可做為蝕刻圖二B中多晶材料層12之晶界122的蝕刻液之種類及其成份。
圖四係根據本發明所製造之藍寶石基材其表面型態之原子力顯微鏡照片。
圖五係根據本發明所製造之藍寶石基材其上生長未摻雜氮化鎵層的穿透式電子顯微鏡照片。
圖六A係根據本發明所製造之藍寶石基材其上生長未摻雜氮化鎵層的原子力顯微鏡照片。
圖六B係根據本發明所製造之藍寶石基材其上生長未摻雜氮化鎵層經蝕刻的掃描式電子顯微鏡照片。
圖六C係一具平整表面的藍寶石基材其上生長未摻雜氮化鎵層的原子力顯微鏡照片。
圖七係列舉三種表面型態不同之藍寶石基材其後製磊晶的光電性質。
1...磊晶基材
10...晶體基材
102...晶體基材的磊晶表面
Claims (10)
- 一種製造一磊晶基材之方法,該方法包含下列步驟:製備一晶體基材,該晶體基材具有一磊晶表面;於該晶體基材之該磊晶表面上,沉積一多晶材料層,該多晶材料層具有複數個不規則晶界;藉由一第一濕式蝕刻製程,蝕刻該多晶材料層之晶界;以該經蝕刻的多晶材料層做為一遮罩,該遮罩具有複數個非圖案化之奈米級晶界內區域,藉由一電漿蝕刻製程,蝕刻該經蝕刻的多晶材料層之晶界內區域;以及藉由一第二濕式蝕刻製程,去除該經蝕刻的多晶材料層,其中該晶體基材之該磊晶表面為奈米尺度高低不平且非圖案化的表面。
- 如申請專利範圍第1項所述之方法,其中該晶體基材係由選自由藍寶石(sapphire)、碳化矽(SiC)、氮化鎵(GaN)、砷化鎵(GaAs)、氧化鋅(ZnO)、矽(Si)、ScAlMgO4 、SrCu2 O2 、YSZ(Yttria-Stabilized Zirconia)、鋁酸鋰(Lithium Aluminum Oxide,LiAlO2 )、鎵酸鋰(Lithium Gallium Oxide,LiGaO2 )、矽酸鋰(Lithium Silicon Oxide,Li2 SiO3 )、鍺酸鋰(Lithium Germanium Oxide,LiGeO3 )、鋁酸鈉(Sodium Aluminum Oxide,NaAlO2 )、鎵酸鈉(Sodium Gallium Oxide,NaGaO2 )、鍺酸鈉(Sodium Germanium Oxide,Na2 GeO3 )、矽酸鈉(Sodium Silicon Oxide,Na2 SiO3 )、磷酸鋰(Lithium Phosphor Oxide,Li3 PO4 )、砷酸鋰(Lithium Arsenic Oxide,Li3 AsO4 )、釩酸鋰(Lithium Vanadium Oxide, Li3 VO4 )、Li2 MgGeO4 (Lithium Magnesium Germanium Oxide)、Li2 ZnGeO4 (Lithium Zinc Germanium Oxide)、Li2 CdGeO4 (Lithium Cadmium Germanium Oxide)、Li2 MgSiO4 (Lithium Magnesium Silicon Oxide)、 Li2 ZnSiO4 (Lithium Zinc Silicon Oxide)、Li2 CdSiO4 (Lithium Cadmium Silicon Oxide)、Na2 MgGeO4 (Sodium Magnesium Germanium Oxide)、Na2 ZnGeO4 (Sodium Zinc Germanium Oxide)以及Na2 ZnSiO4 (Sodium Zinc Silicon Oxide)所組成之一群組中之其一所製成。
- 如申請專利範圍第2項所述之方法,其中該多晶材料層係由選自由鍺(Ge)、氧化鋅(ZnO)、硫化鋅(ZnS)、硒化鎘(CdSe)、碲化鎘(CdTe)、硫化鎘(CdS)、硒化鋅(ZnSe)、砷化銦(InAs)、磷化銦(InP)、矽(Si)以及金屬/矽化物(metal/silicide)所組成之一群組中之其一所形成。
- 如申請專利範圍第3項所述之方法,其中該晶體基材之該磊晶表面其平均表面粗糙度Ra值範圍從100nm至400nm。
- 如申請專利範圍第3項所述之方法,其中該晶體基材之該磊晶表面其平均峰谷高度Rz值範圍從50nm至350nm。
- 如申請專利範圍第3項所述之方法,其中該多晶材料層係藉由選自由一低壓化學氣相沉積製程、一電漿輔助化學氣相沉積製程、一濺鍍製程以及一熱蒸鍍製程沉積於該晶體基材之該磊晶表面上,並且該多晶材料層具有範圍從20nm至2000nm之厚度。
- 一種磊晶基材,包含:一晶體基材,該晶體基材具有一磊晶表面,該晶體基材之該磊晶表面具有複數個不同深度之非圖案化奈米級孔穴。
- 如申請專利範圍第7項所述之磊晶基材,其中該晶體基材係由選自由藍寶石(sapphire)、碳化矽(SiC)、氮化鎵(GaN)、 砷化鎵(GaAs)、氧化鋅(ZnO)、矽(Si)、ScAlMgO4 、SrCu2 O2 、YSZ(Yttria-Stabilized Zirconia)、鋁酸鋰(Lithium Aluminum Oxide,LiAlO2 )、鎵酸鋰(Lithium Gallium Oxide,LiGaO2 )、矽酸鋰(Lithium Silicon Oxide,Li2 SiO3 )、鍺酸鋰(Lithium Germanium Oxide,LiGeO3 )、鋁酸鈉(Sodium Aluminum Oxide,NaAlO2 )、鎵酸鈉(Sodium Gallium Oxide,NaGaO2 )、鍺酸鈉(Sodium Germanium Oxide,Na2 GeO3 )、矽酸鈉(Sodium Silicon Oxide,Na2 SiO3 )、磷酸鋰(Lithium Phosphor Oxide,Li3 PO4 )、砷酸鋰(Lithium Arsenic Oxide,Li3 AsO4 )、釩酸鋰(Lithium Vanadium Oxide,Li3 VO4 )、Li2 MgGeO4 (Lithium Magnesium Germanium Oxide)、Li2 ZnGeO4 (Lithium Zinc Germanium Oxide)、Li2 CdGeO4 (Lithium Cadmium Germanium Oxide)、Li2 MgSiO4 (Lithium Magnesium Silicon Oxide)、Li2 ZnSiO4 (Lithium Zinc Silicon Oxide)、Li2 CdSiO4 (Lithium Cadmium Silicon Oxide)、Na2 MgGeO4 (Sodium Magnesium Germanium Oxide)、Na2 ZnGeO4 (Sodium Zinc Germanium Oxide)以及Na2 ZnSiO4 (Sodium Zinc Silicon Oxide)所組成之一群組中之其一所製成。
- 如申請專利範圍第8項所述之磊晶基材,其中該晶體基材之該磊晶表面其平均表面粗糙度Ra值範圍從100nm至400nm。
- 如申請專利範圍第8項所述之磊晶基材,其中該晶體基材之該磊晶表面其平均峰谷高度Rz值範圍從50nm至350nm。
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US13/067,710 US9068279B2 (en) | 2010-07-15 | 2011-06-22 | Epitaxial substrate having nano-rugged surface and fabrication thereof |
JP2011146360A JP5097291B2 (ja) | 2010-07-15 | 2011-06-30 | 微細凹凸表面を有したエピタキシャル基板とその製造方法 |
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US10347467B2 (en) | 2015-08-21 | 2019-07-09 | Regents Of The University Of Minnesota | Embedded mask patterning process for fabricating magnetic media and other structures |
CN107099844B (zh) * | 2016-02-23 | 2021-01-05 | 松下知识产权经营株式会社 | Ramo4基板及其制造方法 |
US10350725B2 (en) * | 2016-02-23 | 2019-07-16 | Panasonic Intellectual Property Management Co., Ltd. | RAMO4 substrate and manufacturing method thereof |
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