TWI562395B - Method of forming nanostructures on a substrate and use of the same - Google Patents

Method of forming nanostructures on a substrate and use of the same

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Publication number
TWI562395B
TWI562395B TW101118733A TW101118733A TWI562395B TW I562395 B TWI562395 B TW I562395B TW 101118733 A TW101118733 A TW 101118733A TW 101118733 A TW101118733 A TW 101118733A TW I562395 B TWI562395 B TW I562395B
Authority
TW
Taiwan
Prior art keywords
substrate
same
forming nanostructures
nanostructures
forming
Prior art date
Application number
TW101118733A
Other languages
English (en)
Other versions
TW201301554A (zh
Inventor
Chew Beng Soh
Wei Liu
Soo Jin Chua
Jian Wei Jayce Cheng
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Agency Science Tech & Res
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Publication of TW201301554A publication Critical patent/TW201301554A/zh
Application granted granted Critical
Publication of TWI562395B publication Critical patent/TWI562395B/zh

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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
TW101118733A 2011-05-25 2012-05-25 Method of forming nanostructures on a substrate and use of the same TWI562395B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161489810P 2011-05-25 2011-05-25

Publications (2)

Publication Number Publication Date
TW201301554A TW201301554A (zh) 2013-01-01
TWI562395B true TWI562395B (en) 2016-12-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW101118733A TWI562395B (en) 2011-05-25 2012-05-25 Method of forming nanostructures on a substrate and use of the same

Country Status (3)

Country Link
JP (2) JP2012246216A (zh)
CN (1) CN103236395B (zh)
TW (1) TWI562395B (zh)

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CN103048707A (zh) * 2013-01-04 2013-04-17 苏州大学 制作亚波长抗反射结构和亚波长抗反射结构压模的方法
TW201445246A (zh) * 2013-05-31 2014-12-01 Nanocrystal Asia Inc 無缺陷模仁之製造方法
WO2015023760A1 (en) * 2013-08-14 2015-02-19 Board Of Regents, The University Of Texas System Methods of fabricating silicon nanowires and devices containing silicon nanowires
US20160293781A1 (en) * 2013-11-21 2016-10-06 The Hong Kong University Of Science And Technology Three dimensional anti-reflection nanocone film
JP6037083B2 (ja) 2014-04-18 2016-11-30 富士電機株式会社 半導体装置の製造方法
DE112014003658T5 (de) 2014-04-18 2016-05-12 Fuji Electric Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung
CN103924192A (zh) * 2014-04-21 2014-07-16 上海理工大学 一种具有纳米微腔结构的金属银薄膜的制备方法
KR101588577B1 (ko) * 2014-06-11 2016-01-28 한국표준과학연구원 대면적의 수직 정렬된 갈륨비소 반도체 나노선 어레이 제작 공정
CN104659179A (zh) * 2015-03-10 2015-05-27 江苏新广联半导体有限公司 用于GaN基LED的抗反射透明电极结构及其制备方法
CN105914270B (zh) * 2016-06-28 2018-09-18 聚灿光电科技股份有限公司 硅基氮化镓led外延结构的制造方法
CN107425095A (zh) * 2017-05-05 2017-12-01 江南大学 一种使用Ni纳米模板制备多波段发光的InGaN/GaN量子阱结构的方法
CN108018531B (zh) * 2017-11-27 2020-04-17 天津大学 一种制备纳米多孔金属材料的方法
CN108281517B (zh) * 2018-01-26 2020-06-16 厦门市三安光电科技有限公司 一种发光二极管的制作方法
CN109338287B (zh) * 2018-08-15 2021-02-26 南京理工大学 一种织构化Ta/Ag宽温区自润滑涂层及其制备方法
CN108922948B (zh) * 2018-08-24 2023-11-10 广东省半导体产业技术研究院 一种发光二极管结构及其制作方法
CN109786501B (zh) * 2018-12-11 2020-09-18 江西展宇新能科技有限公司 一种多晶黑硅片的制绒方法
CN109534684A (zh) * 2018-12-27 2019-03-29 河南豫科玻璃技术股份有限公司 一种基于纳米级无闪点防眩光技术的蚀刻玻璃及其刻蚀工艺
US11583954B2 (en) 2019-03-04 2023-02-21 Kabushiki Kaisha Toshiba Welding method
CN110118806A (zh) * 2019-05-29 2019-08-13 兰州大学 陶瓷管型气体传感器及其制备方法
CN111362225B (zh) * 2020-03-17 2024-01-30 中国科学院半导体研究所 纳米针尖结构、复合结构及其制备方法
CN112018213B (zh) * 2020-07-20 2022-03-29 烟台南山学院 一种与基底表面具有高粘附力的直立Au纳米锥的制备方法
CN112614945B (zh) * 2020-12-16 2023-02-10 同济大学 具有沟槽阵列结构的微纳单晶柔性光电探测器及其制备
CN112820634B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法

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CN101295636A (zh) * 2007-04-25 2008-10-29 中国科学院半导体研究所 高晶体质量氮化物外延生长所用图形衬底的制备方法

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CN101521239A (zh) * 2009-03-24 2009-09-02 中国科学院微电子研究所 硅基纳米柱阵列异质结薄膜太阳能电池及其制备方法
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US20060097691A1 (en) * 2002-11-05 2006-05-11 Mino Green Structured silicon anode
JP2007294972A (ja) * 2006-04-25 2007-11-08 Lg Innotek Co Ltd 発光素子及びその製造方法
JP2008124413A (ja) * 2006-10-20 2008-05-29 Mitsubishi Electric Corp シリコン基板の粗面化方法および光起電力装置の製造方法
CN101295636A (zh) * 2007-04-25 2008-10-29 中国科学院半导体研究所 高晶体质量氮化物外延生长所用图形衬底的制备方法

Also Published As

Publication number Publication date
JP2016189469A (ja) 2016-11-04
CN103236395A (zh) 2013-08-07
CN103236395B (zh) 2016-09-28
JP6257692B2 (ja) 2018-01-10
TW201301554A (zh) 2013-01-01
JP2012246216A (ja) 2012-12-13

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