JP2012074734A - タングステンの蝕刻抑制剤を含むポリシング組成物 - Google Patents
タングステンの蝕刻抑制剤を含むポリシング組成物 Download PDFInfo
- Publication number
- JP2012074734A JP2012074734A JP2011272579A JP2011272579A JP2012074734A JP 2012074734 A JP2012074734 A JP 2012074734A JP 2011272579 A JP2011272579 A JP 2011272579A JP 2011272579 A JP2011272579 A JP 2011272579A JP 2012074734 A JP2012074734 A JP 2012074734A
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- JP
- Japan
- Prior art keywords
- chemical mechanical
- mechanical polishing
- tungsten
- polishing composition
- slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010937 tungsten Substances 0.000 title claims abstract description 174
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 174
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 173
- 238000005498 polishing Methods 0.000 title claims abstract description 136
- 239000000203 mixture Substances 0.000 title claims abstract description 135
- 239000003112 inhibitor Substances 0.000 title claims abstract description 58
- 238000005530 etching Methods 0.000 title claims abstract description 48
- 239000000126 substance Substances 0.000 claims abstract description 134
- 239000002002 slurry Substances 0.000 claims abstract description 105
- 238000000034 method Methods 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 150000001875 compounds Chemical class 0.000 claims description 67
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 65
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 58
- 239000003054 catalyst Substances 0.000 claims description 58
- 229910044991 metal oxide Inorganic materials 0.000 claims description 42
- 150000004706 metal oxides Chemical class 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 239000003381 stabilizer Substances 0.000 claims description 35
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 30
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical group [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 30
- 239000000377 silicon dioxide Substances 0.000 claims description 29
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 27
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- 125000000524 functional group Chemical group 0.000 claims description 17
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- 239000004471 Glycine Substances 0.000 claims description 13
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 12
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- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 claims description 6
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- JZBCTZLGKSYRSF-UHFFFAOYSA-N 2-Ethyl-3,5-dimethylpyrazine Chemical compound CCC1=NC=C(C)N=C1C JZBCTZLGKSYRSF-UHFFFAOYSA-N 0.000 claims description 4
- GUQMDNQYMMRJPY-UHFFFAOYSA-N 4,4-dimethyl-1,3-oxazolidine Chemical compound CC1(C)COCN1 GUQMDNQYMMRJPY-UHFFFAOYSA-N 0.000 claims description 4
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 claims description 4
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- XKBGEWXEAPTVCK-UHFFFAOYSA-M methyltrioctylammonium chloride Chemical compound [Cl-].CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC XKBGEWXEAPTVCK-UHFFFAOYSA-M 0.000 claims description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- IAEGWXHKWJGQAZ-UHFFFAOYSA-N trimethylpyrazine Chemical compound CC1=CN=C(C)C(C)=N1 IAEGWXHKWJGQAZ-UHFFFAOYSA-N 0.000 claims description 4
- LEVWYRKDKASIDU-QWWZWVQMSA-N D-cystine Chemical compound OC(=O)[C@H](N)CSSC[C@@H](N)C(O)=O LEVWYRKDKASIDU-QWWZWVQMSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- 229960003067 cystine Drugs 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000011164 primary particle Substances 0.000 claims description 3
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 claims description 3
- 150000003573 thiols Chemical class 0.000 claims description 3
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims description 2
- PFFANLXVTHIIBE-UHFFFAOYSA-N 1-methyl-4-pyridin-4-ylpyridin-1-ium Chemical compound C1=C[N+](C)=CC=C1C1=CC=NC=C1 PFFANLXVTHIIBE-UHFFFAOYSA-N 0.000 claims description 2
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 2
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- 239000001363 2-ethyl-3,5-dimethylpyrazine Substances 0.000 claims description 2
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims description 2
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- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- FGVVTMRZYROCTH-UHFFFAOYSA-N pyridine-2-thiol N-oxide Chemical compound [O-][N+]1=CC=CC=C1S FGVVTMRZYROCTH-UHFFFAOYSA-N 0.000 claims description 2
- DPJRMOMPQZCRJU-UHFFFAOYSA-M thiamine hydrochloride Chemical compound Cl.[Cl-].CC1=C(CCO)SC=[N+]1CC1=CN=C(C)N=C1N DPJRMOMPQZCRJU-UHFFFAOYSA-M 0.000 claims description 2
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- VZQXLFQRAORWSI-UHFFFAOYSA-N (4-ethyl-2-heptadec-1-enyl-5h-1,3-oxazol-4-yl)methanol Chemical compound CCCCCCCCCCCCCCCC=CC1=NC(CC)(CO)CO1 VZQXLFQRAORWSI-UHFFFAOYSA-N 0.000 claims 1
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- WJLUBOLDZCQZEV-UHFFFAOYSA-M hexadecyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCCCCCCCCCCCCCCC[N+](C)(C)C WJLUBOLDZCQZEV-UHFFFAOYSA-M 0.000 claims 1
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- 230000005540 biological transmission Effects 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
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- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
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- 229940050410 gluconate Drugs 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
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- 230000003301 hydrolyzing effect Effects 0.000 description 1
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910001506 inorganic fluoride Inorganic materials 0.000 description 1
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- 125000004355 nitrogen functional group Chemical group 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- GSWAOPJLTADLTN-UHFFFAOYSA-N oxidanimine Chemical compound [O-][NH3+] GSWAOPJLTADLTN-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 125000000101 thioether group Chemical group 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
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- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
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- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
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Abstract
【解決手段】本発明は、タングステンを蝕刻できる成分及び少なくとも一つのタングステンの蝕刻抑制剤を含む化学機械的ポリシング組成物並びにスラリーに関する。また、本発明はこの組成物及びスラリーを使用してタングステンを含む基板を洗浄する方法に関する。
【選択図】なし
Description
今日、高速においてタングステンを洗浄し、また同時に不必要なタングステンプラグのくぼみを形成しないような新しい化学機械的ポリシング組成物が熱望されている。
更に、本発明の化学機械的ポリシング組成物は、良好な均一面を有するタングステン層を、コントロールされた速度で洗浄することができるものである。
更には、本発明はタングステン層を含む集積回路の金色の多数層を洗浄するために、本発明の化学機械的ポリシング組成物をスラリー状で使用する方法に関する。
他の態様として、本発明はタングステンを蝕刻することができる化合物、そして少なくとも一つのタングステンの蝕刻抑制剤を含み、ここでタングステンの蝕刻抑制剤はアミノアルキル化合物、約9.0より低いpH値の溶液でアルキルアンモニウムイオンを形成する化合物及びこれらの混合物を含む化学機械的ポリシング組成物に関する。
次に示す例は、本発明の好ましい態様及び本発明の組成物を使用する好ましい方法を明らかにするものである。
スラリーのタングステンに対する性能を評価するため、化学機械的ポリシングスラリーを準備した。5.3重量%のシリカの水溶液、硝酸第2鉄の形態での53ppmの鉄、3.75重量%の過酸化水素及び0.05重量%のマロン酸から成る標準化学機械的ポリシングスラリーを準備した。シリカは、例3に記載されているスラリー成分と混ぜ合わす前に、事前に分散した。
スラリーのタングステンに対する性能を評価するため、種々のタングステンの蝕刻抑制剤を含む化学機械的ポリシングスラリーを準備した。まず、5.0重量%のシリカの水溶液から成る標準化学機械的ポリシングスラリーを準備した。シリカは例3に記載されている他のスラリー成分と混ぜ合わす前に、事前に分散した。この事前に分散したシリカは、硝酸第二鉄の形態での56ppmの鉄、4重量%の過酸化水素及び鉄触媒の一原子について3当量のマロン酸と混ぜ合せた。得られたスラリーは硝酸を用いてpH2.3の値に調節した。
タングステンウェファーの化学機械的洗浄に対する性能を評価するため、ポリシングスラリーを準備した。測定した性能パラメーターには、タングステンの洗浄速度も含めた。5.0重量%のヒュームドシリカを含む標準研磨スラリーを準備した。シリカの事前分散は、高速剪断のもと150m2 /gの表面積を有する濃縮分散液のスラリーを準備した。次いで、この分散液はシリカを更に希釈する前に、0.5ミクロンのロ過袋、次いで1ミクロンのロ過袋、続いて1ミクロンのカートリッジフィルターそして最後に0.2ミクロンのカートリッジフィルターを用いて順次ロ過を行い、そして残りの成分を加えた。この残りの成分は、硝酸第二鉄モノ水和物の形態での0.036重量%の鉄触媒、6.0重量%の過酸化水素、0.05重量%のマロン酸及びタングステンの蝕刻抑制剤として加えた0.05重量%のピリダジンの脱イオン水である。この最終のスラリーのpH値は、硝酸によってさらに調節された。
ここでの実施の例のため、新たに基本となるスラリーを準備した。このベーススラリーは、5.0重量%のヒュームドシリカ、硝酸第2鉄の形態での50ppmの鉄、2.0重量%の過酸化水素、0.05重量%のマロン酸及び0.001重量%のKathonの水溶液を含むものである。このシリカは、例3において述べたように、他のスラリー成分を混ぜ合す前に、事前に分散した。表4に示した添加剤を加えた後、必要に応じ硝酸又は水酸化カリウムを用いて表に示したpH値に調節した。各スラリーの速度は、例2に示した方法に従って算出した。
Claims (66)
- タングステンを蝕刻できる化合物及び少なくとも一つのタングステンの蝕刻抑制剤を含む化学機械的ポリシング組成物。
- タングステンの蝕刻抑制剤は窒素含有官能基を含む化合物である請求項1記載の化学機械的ポリシング組成物。
- タングステンの蝕刻抑制剤は窒素含有複素環、スルフィド、チオール、アルキルアンモニウムイオン又はこれらの混合した官能基から選ばれる少なくとも1種の官能基を化合物中に含む化合物である請求項1記載の化学機械的ポリシング組成物。
- 窒素含有官能基を含む化合物は窒素含有複素環、並びにアルキルアンモニウムイオン、アミノアルキル、アミノ酸及びこれらの混合物を形成する化合物である請求項2記載の化学機械的ポリシング組成物。
- 窒素含有官能基を含む化合物は2,3,5−トリメチルピラジン、2−エチル−3,5−ジメチルピラジン、キノキサリン、アセチルピロール、ピリダジン、ヒスチジン、ピラジン、ベンズイミダゾール及びこれらの混合物から成る群から選ばれる窒素含有官能基を含む化合物である請求項2記載の化学機械的ポリシング組成物。
- タングステンの蝕刻抑制剤はグルタチオン(還元型)、システイン、2−メルカプトベンズイミダゾール、シスチン、チオフェン、メルカプトピリジン N−オキシド、チアミン塩酸塩、テトラエチルチウラムジスルフィド、2,5−ジメルカプト−1,3−チアジアゾール及びこれらの混合物から選ばれるものである請求項1記載の化学機械的ポリシング組成物。
- タングステンの蝕刻抑制剤はモノコート イシエズ(Monoquat Isies、イソステアリルエチルイミドヨードニウム)、セチルトリメチルアンモニウム水酸化物、アルカテルグ E(Alkaterge E,2−ヘプタデセニル−4−エチル−2−オキサゾリン−4−メタノール)、アルコート 336(Aliquat 336、トリカプリルメチルアンモニウム塩化物)、ニウオスペット 101(Nuospet 101、4,4−ジメチルオキサゾリジン)、テトラブチルアンモニウム水酸化物、ドデシルアミン、テトラメチルアンモニウム水酸化物及びこれらの混合物から選ばれるアルキルアンモニウムイオン官能基を含む化合物である請求項1記載の化学機械的ポリシング組成物。
- 窒素含有官能基を含む化合物は約9より低いpH値においてアルキルアンモニウムイオンを形成する化合物である請求項2記載の化学機械的ポリシング組成物。
- タングステンの蝕刻抑制剤は天然アミノ酸、合成アミノ酸及びこれらの混合物から選ばれるものである請求項1記載の化学機械的ポリシング組成物。
- タングステンの蝕刻抑制剤はグリシンである請求項1記載の化学機械的ポリシング組成物。
- 請求項1乃至10記載のいづれかの化学機械的ポリシング組成物の水溶液。
- タングステンの蝕刻抑制剤は約5.0より低いpH値を有する水溶液中でアルキルアンモニウムイオンを形成する少なくとも一種の化合物である請求項1記載の化学機械的ポリシング組成物。
- アミノプロピルシラノール、アミノプロピルシロキサン及びこれらの混合物を含む請求項1記載の化学機械的ポリシング組成物。
- タングステンを蝕刻することのできる成分は、タングステンを蝕刻できるpH値を有する請求項1記載の化学機械的ポリシング組成物。
- タングステンを蝕刻することのできる化合物のpH値は約4.0より大きい値である請求項14記載の化学機械的ポリシング組成物。
- タングステンを蝕刻することのできる化合物は少なくとも一つの酸化剤である請求項1乃至15記載のいづれかの化学機械的ポリシング組成物。
- 酸化剤は少なくとも一つのペル化合物である請求項16記載の化学機械的ポリシング組成物。
- ペル化合物は過酸化水素である請求項17記載の化学機械的ポリシング組成物。
- 約0.1から約50重量%の過酸化水素を含む請求項18記載の化学機械的ポリシング組成物。
- 約0.5から約10重量%の過酸化水素を含む請求項19記載の化学機械的ポリシング組成物。
- タングステンを蝕刻することのできる化合物は少なくとも一つの弗化物を含む化合物である請求項1乃至20記載のいづれかの化学機械的ポリシング組成物。
- 更に少なくとも一つの金属触媒を含む請求項1乃至21記載のいづれかの化学機械的ポリシング組成物。
- 金属触媒は多段階酸化状態を有する無機鉄化合物及び有機鉄化合物から成る群から選ばれる鉄触媒である請求項22記載の化学機械的ポリシング組成物。
- 鉄触媒は硝酸第二鉄である請求項23記載の化学機械的ポリシング組成物。
- 約0.001から約2.0重量%の硝酸第二鉄触媒を含む請求項24記載の化学機械的ポリシング組成物。
- タングステンを蝕刻することのできる化合物は過酸化水素であり、また組成物は約0.001から約0.2重量%の鉄触媒を更に含む請求項1記載の化学機械的ポリシング組成物。
- 請求項1乃至26記載のいづれかの化学機械的組成物及び少なくとも一つの金属酸化物研磨剤を含む化学機械的ポリシングスラリー。
- 金属酸化物研磨剤はアルミナ、セリア、ゲルマニア(germania)、シリカ、チタニア、ジルコニア及びこれらの混合物を含む群から選ばれる請求項27記載の化学機械的ポリシングスラリー。
- 金属酸化物研磨剤は金属酸化物の水性分散液である請求項27及び28記載のいづれかの化学機械的ポリシングスラリー。
- 金属酸化物研磨剤は約1.0ミクロンより少ないサイズ分布及び約0.4ミクロンより小さい平均凝集直径を有する金属酸化物凝集体から成る請求項27乃至29記載のいづれかの化学機械的ポリシングスラリー。
- 金属酸化物研磨剤は一次粒子の直径が0.400より小さくそして表面積が約10m2 /gから約250m2 /gを有する分離した個々の金属酸化物球体から成る請求項27乃至29記載のいづれかの化学機械的ポリシングスラリー。
- 金属酸化物研磨剤は約5m2 /gから約430m2 /gの範囲の表面積を有する請求項27乃至31記載のいづれかの化学機械的ポリシングスラリー。
- 金属酸化物研磨剤は約30m2 /gから約170m2 /gの表面積を有する請求項32記載の化学機械的ポリシングスラリー。
- 金属酸化物研磨剤は沈降研磨剤又はヒュームド研磨剤である請求項27乃至33記載のいづれかの化学機械的ポリシングスラリー。
- 金属酸化物研磨剤はシリカである請求項27乃至34記載のいづれかの化学機械的ポリシングスラリー。
- シリカはヒュームドシリカである請求項35記載の化学機械的ポリシングスラリー。
- 更に少なくとも一つの安定剤を含む請求項1乃至26記載のいづれかの化学機械的ポリシング組成物。
- 更に少なくとも一つの安定剤を含む請求項27乃至36記載のいづれかの化学機械的ポリシングスラリー。
- 燐酸、フタル酸、くえん酸、アジピン酸、蓚酸、マロン酸、ベンゾニトリル及びこれらの混合物から選ばれた少なくとも一つの安定剤を含む請求項37記載の化学機械的ポリシング組成物又は請求項38記載の化学材料的ポリシングスラリー。
- 安定剤は触媒について約1当量から約15当量のマロン酸である請求項39記載の化学機械的ポリシング組成物又は化学機械的ポリシングスラリー。
- 約1.0から約15.0重量%のシリカ、
約0.001から約22重量%の硝酸第二鉄、
約1.0から約10.0重量%の少なくとも一つの安定剤、
及び約0.001から約1.0重量%の少なくとも一つのタングステンの蝕刻抑制剤を含む化学機械的ポリシングスラリー。 - 約1.0から約15.0重量%のシリカ、
約0.001から約0.2重量%の硝酸第二鉄、
約1.0から約10.0重量%の過酸化水素、
少なくとも一つの安定剤
及び約0.001から約1.0重量%の少なくとも一つのタングステンの蝕刻抑制剤を含む化学機械的ポリシングスラリー。 - タングステンの蝕刻抑制剤はピリダジンである請求項41又は42記載の化学機械的ポリシングスラリー。
- 安定剤は触媒について約1.0から約15当量のマロン酸である請求項41乃至43記載のいづれかの化学機械的ポリシングスラリー。
- 約0.5から約15.0重量%のシリカ、
約0.001から約0.2重量%の硝酸第二鉄触媒、
約0.5から約10.0重量%の過酸化水素、
少なくとも一つの安定剤、
並びにグリシン、アミノプロピルシラノール、アミノプロピルシロキサン、及びこれらの混合物から選ばれる約0.001から約1.0重量%のタングステンの蝕刻抑制剤を含み、ここでスラリーは約9より低いpH値である化学機械的ポリシングスラリー。 - タングステンの蝕刻抑制剤はグリシンである請求項45記載の化学機械的ポリシングスラリー。
- タングステンの蝕刻抑制剤はグリシン、アミノプロピルシラノール及びアミノプロピルシロキサンの混合物である請求項45又は46記載の化学機械的ポリシングスラリー。
- 安定剤は触媒について約1から約5当量のマロン酸である請求項45乃至47記載のいづれかの化学機械的ポリシングスラリー。
- (a)タングステンを腐蝕することのできる少なくとも一つの化合物、少なくとも一つのタングステンの蝕刻抑制剤及び脱イオン水を混合して化学機械的ポリシング組成物を製造し、
(b)この化学機械的ポリシング組成物を基板(substrate)に適用し、そして
(c)パッドを基板に接触させて基板から少なくともタングステン層の一部分を取り除きそしてこのパッドを基板と関連して移動する各工程を包含する少なくとも一つのタングステン層を含む基板のポリシング方法。 - (a)タングステンを蝕刻することのできる少なくとも一つの化合物、少なくとも一つのタングステンの蝕刻抑制剤及び脱イオン水を混合して9.0より低いpH値を有する化学機械的ポリシング組成物を製造し、ここでタングステンの蝕刻抑制剤はアミノアルキル、約9.0より低いpH値の溶液においてアルキルアンモニウムイオンを形成する化合物、及びこれらの混合物であり、
(b)この化学機械的ポリシング組成物を基板に適用し、そして
(c)パッドを基板に接触させて基板から少なくともタングステン層の一部分を取り除きそしてこのパッドを基板と関連して移動する各工程を包含する少なくとも一つのタングステン層を含む基板のポリシング方法。 - 基板はチタン及び/又は窒化チタン金属層を更に含み、ここで窒化チタン層の少なくとも一部分は該工程(c)において取り除かれる請求項49又は50記載の方法。
- タングステンを蝕刻することのできる化合物は過酸化水素である請求項49乃至51記載のいづれかの方法。
- 化学機械的組成物は無機鉄化合物及び有機鉄化合物から選ばれる触媒を含む請求項49乃至52記載のいづれかの方法。
- 触媒は約0.001から約2.0重量%の硝酸第二鉄である請求項53記載の方法。
- 化学機械的組成物は少なくとも一つの金属酸化物研磨剤を更に含んで化学機械的ポリシングスラリーとする請求項49乃至54記載のいづれかの方法。
- 金属酸化物研磨剤はアルミナ、セリア、ゲルマニア、シリカ、チタニア、ジルコニア及びこれらの混合物を含む群から選ばれる請求項55記載の方法。
- 金属酸化物研磨剤は金属酸化物の水性分散液である請求項55又は56記載の方法。
- 金属酸化物研磨剤は沈降アルミナ、ヒュームドアルミナ、沈降シリカ、ヒュームドシリカ及びこれらの混合物から成る群から選ばれる請求項55乃至57記載のいづれかの方法。
- 金属酸化物研磨剤は約0.5から約15.0重量%のシリカである請求項55乃至58記載のいづれかの方法。
- タングステンの蝕刻抑制剤は天然アミノ酸、合成アミノ酸及びこれらの混合物の群から選ばれる請求項49乃至59記載のいづれかの方法。
- タングステンの蝕刻抑制剤はグリシンである請求項49乃至60記載のいづれかの方法。
- タングステンの蝕刻抑制剤は約5.0より低いpH値を有する水溶液中でアルキルアンモニウムイオンを形成する少なくとも一つの化合物である請求項49乃至60記載のいづれかの方法。
- 抑制剤はグリシン、アミノプロピルシラノール、アミノプロピルシロキサン及びこれらの混合物から選ばれる請求項49乃至62記載のいづれかの方法。
- (a)約0.5から約15.0重量%のシリカ、約0.001から約0.2重量%の硝酸第二鉄触媒、約0.5から約10.0重量%の過酸化水素、少なくとも一つの安定剤、約0.001から約1.0重量%のグリシン及び脱イオン水を混合して約2.0から約5.0のpH値を有する化学機械的ポリシングスラリーを製造し、
(b)この化学機械的ポリシングスラリーを基板に適用し、そして
(c)パッドを基板に接触させて少なくともタングステン層の一部分を取り除きそしてパッドを基板に関連させて移動することを包含する少なくとも一つのタングステン層を含む基板のポリシング方法。 - 化学機械的ポリシングスラリーはアミノプロピルシラノール、アミノプロピルシロキサン及びこれらの混合物を含む請求項64記載の方法。
- (a)約0.5から約15.0重量%のシリカ、約0.001から約0.2重量%の硝酸第二鉄触媒、約1.0から約10.0重量%の過酸化水素、触媒について約1から約15当量のマロン酸、約0.01から約0.5重量%の少なくとも一つのタングステンの蝕刻抑制剤及び脱イオン水を混合して化学機械的ポリシングスラリーを製造し、
(b)この化学機械的ポリシングスラリーを基板に適用し、そして
(c)パッドを基板に接触させて少なくともタングステン層の一部分を取り除きそしてパッドを基板に関連させて移動することを包含する少なくとも一つのタングステン層を含む基板のポリシング方法。
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US08/901,803 US6083419A (en) | 1997-07-28 | 1997-07-28 | Polishing composition including an inhibitor of tungsten etching |
US09/086659 | 1998-05-29 | ||
US09/086,659 US6136711A (en) | 1997-07-28 | 1998-05-29 | Polishing composition including an inhibitor of tungsten etching |
US08/901803 | 1998-05-29 |
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CN106661429A (zh) * | 2014-08-26 | 2017-05-10 | 凯斯科技股份有限公司 | 抛光浆料组合物 |
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Also Published As
Publication number | Publication date |
---|---|
JP4917195B2 (ja) | 2012-04-18 |
DE69828925T2 (de) | 2005-07-28 |
JP5571649B2 (ja) | 2014-08-13 |
CN1966594A (zh) | 2007-05-23 |
AU8595498A (en) | 1999-02-16 |
US6083419A (en) | 2000-07-04 |
CN1966594B (zh) | 2013-01-16 |
ATE288948T1 (de) | 2005-02-15 |
KR100606315B1 (ko) | 2006-09-22 |
IL134213A (en) | 2005-12-18 |
KR19990014245A (ko) | 1999-02-25 |
US6136711A (en) | 2000-10-24 |
EP0896042B1 (en) | 2005-02-09 |
IL134213A0 (en) | 2001-04-30 |
CN1326199C (zh) | 2007-07-11 |
TW580514B (en) | 2004-03-21 |
CN1272221A (zh) | 2000-11-01 |
MY116265A (en) | 2003-12-31 |
EP0896042A1 (en) | 1999-02-10 |
WO1999005706A1 (en) | 1999-02-04 |
DE69828925D1 (de) | 2005-03-17 |
JPH11116948A (ja) | 1999-04-27 |
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