JP2012023356A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2012023356A JP2012023356A JP2011134102A JP2011134102A JP2012023356A JP 2012023356 A JP2012023356 A JP 2012023356A JP 2011134102 A JP2011134102 A JP 2011134102A JP 2011134102 A JP2011134102 A JP 2011134102A JP 2012023356 A JP2012023356 A JP 2012023356A
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- insulating film
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- oxide semiconductor
- oxide
- semiconductor film
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Abstract
【解決手段】酸化物半導体膜と、酸化物半導体膜と重畳するゲート電極と、酸化物半導体膜と電気的に接続するソース電極およびドレイン電極と、を有する半導体装置の作製方法であって、酸化物半導体膜上に接して、酸化ガリウムを含む第1の絶縁膜を形成し、第1の絶縁膜上に接して第2の絶縁膜を形成し、第2の絶縁膜上にレジストマスクを形成し、第1の絶縁膜および第2の絶縁膜にドライエッチングを行ってコンタクトホールを形成し、レジストマスクを、酸素プラズマによるアッシングを用いて除去し、コンタクトホールを介して、ゲート電極、ソース電極またはドレイン電極のいずれか一または複数と電気的に接続される配線を形成する、半導体装置の作製方法である。
【選択図】図1
Description
本実施の形態では、半導体装置および半導体装置の作製方法の一形態を、図1乃至図4を用いて説明する。
図1(A)乃至図1(E)に、開示する発明の一態様に係る半導体装置の作製方法の例として、トランジスタ110の作製工程の断面図を示す。ここで、トランジスタ110は、基板200上の、ゲート電極202、絶縁膜204、酸化物半導体膜206、ソース電極208a、ドレイン電極208b、絶縁膜210、絶縁膜212および配線216を含む。図1(E)に示すトランジスタにおいて、酸化ガリウムを含む絶縁膜210は、酸化物半導体膜206に接して設けられており、酸化ガリウムを含む絶縁膜210上に接して絶縁膜212が設けられている。また、配線216は絶縁膜212および絶縁膜210に形成されたコンタクトホール218を介してソース電極208aと電気的に接続されている。
実施の形態1で例示したトランジスタを用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した液晶表示装置を具備する電子機器の例について説明する。
200 基板
202 ゲート電極
204 絶縁膜
206 酸化物半導体膜
208a ソース電極
208b ドレイン電極
210 絶縁膜
212 絶縁膜
214 レジストマスク
216 配線
218 コンタクトホール
222 配線
224 コンタクトホール
301 ターゲット
302 ターゲット
310 トランジスタ
400 基板
402 ゲート電極
406 酸化物半導体膜
408a ソース電極
408b ドレイン電極
410 絶縁膜
412 絶縁膜
414 レジストマスク
416 配線
418 コンタクトホール
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカー
2800 筐体
2801 筐体
2802 表示パネル
2803 スピーカー
2804 マイクロフォン
2805 操作キー
2806 ポインティングデバイス
2807 カメラ用レンズ
2808 外部接続端子
2810 太陽電池セル
2811 外部メモリスロット
3001 本体
3002 筐体
3003 表示部
3004 キーボード
3021 本体
3022 スタイラス
3023 表示部
3024 操作ボタン
3025 外部インターフェイス
3051 本体
3053 接眼部
3054 操作スイッチ
3055 表示部(B)
3056 バッテリー
3057 表示部(A)
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4018a FPC
4018b FPC
4019 異方性導電膜
4021 絶縁層
4030 電極層
4031 電極層
4032 絶縁膜
4033 絶縁膜
4510 隔壁
4511 電界発光層
4513 発光素子
4514 充填材
4612 キャビティ
4613 球形粒子
4614 充填材
4615a 黒色領域
4615b 白色領域
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
Claims (7)
- 酸化物半導体膜と、ゲート電極と、前記酸化物半導体膜と電気的に接続するソース電極およびドレイン電極と、を有する半導体装置の作製方法であって、
前記ゲート電極上に重畳して前記酸化物半導体膜を形成し、
前記酸化物半導体膜、前記ソース電極および前記ドレイン電極上に接して、酸化ガリウムを含む第1の絶縁膜を形成し、
前記第1の絶縁膜上に接して第2の絶縁膜を形成し、
前記第2の絶縁膜上にレジストマスクを形成し、
前記第1の絶縁膜および前記第2の絶縁膜にドライエッチングを行ってコンタクトホールを形成し、
前記レジストマスクを、酸素プラズマによるアッシングを用いて除去し、
前記コンタクトホールを介して、前記ゲート電極、前記ソース電極または前記ドレイン電極のいずれか一または複数と電気的に接続される配線を形成する、半導体装置の作製方法。 - 酸化物半導体膜と、ゲート電極と、前記酸化物半導体膜と電気的に接続するソース電極およびドレイン電極と、を有する半導体装置の作製方法であって、
前記酸化物半導体膜、前記ソース電極および前記ドレイン電極上に接して、酸化ガリウムを含む第1の絶縁膜を形成し、
前記酸化物半導体膜上に重畳して、前記第1の絶縁膜上に接して前記ゲート電極を形成し、
前記第1の絶縁膜上に接して第2の絶縁膜を形成し、
前記第2の絶縁膜上にレジストマスクを形成し、
前記第1の絶縁膜および前記第2の絶縁膜にドライエッチングを行ってコンタクトホールを形成し、
前記レジストマスクを、酸素プラズマによるアッシングを用いて除去し、
前記コンタクトホールを介して、前記ソース電極または前記ドレイン電極のいずれか一または複数と電気的に接続される配線を形成する、半導体装置の作製方法。 - 前記第1の絶縁膜における前記コンタクトホールの直径は、前記第2の絶縁膜における前記コンタクトホールの直径より小さくする、請求項1または2に記載の半導体装置の作製方法。
- 前記第2の絶縁膜の膜厚は、前記第1の絶縁膜の膜厚より大きくする、請求項1乃至3のいずれか一に記載の半導体装置の作製方法。
- 前記ドライエッチングにおいて、フッ素を含むガスを用いる請求項1乃至4のいずれか一に記載の半導体装置の作製方法。
- 前記第1の絶縁膜はさらに、酸化アルミニウムを含み、
前記ドライエッチングにおいて、塩素を含むガスを用いる請求項1乃至5のいずれか一に記載の半導体装置の作製方法。 - 前記第1の絶縁膜は加熱しながら形成する請求項1乃至6のいずれか一に記載の半導体装置の作製方法。
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2011
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- 2011-06-09 US US13/156,472 patent/US8906737B2/en active Active
- 2011-06-10 TW TW100120370A patent/TWI579927B/zh not_active IP Right Cessation
- 2011-06-16 JP JP2011134102A patent/JP2012023356A/ja not_active Withdrawn
-
2014
- 2014-12-03 US US14/558,989 patent/US9252103B2/en active Active
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2015
- 2015-11-04 JP JP2015216373A patent/JP6125595B2/ja active Active
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Also Published As
Publication number | Publication date |
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US8906737B2 (en) | 2014-12-09 |
US20110312127A1 (en) | 2011-12-22 |
JP6125595B2 (ja) | 2017-05-10 |
US20150084049A1 (en) | 2015-03-26 |
TW201207956A (en) | 2012-02-16 |
JP2016036046A (ja) | 2016-03-17 |
TWI579927B (zh) | 2017-04-21 |
WO2011158704A1 (en) | 2011-12-22 |
US9252103B2 (en) | 2016-02-02 |
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