WO2008099843A1 - 窒化物半導体素子および窒化物半導体素子の製造方法 - Google Patents

窒化物半導体素子および窒化物半導体素子の製造方法 Download PDF

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Publication number
WO2008099843A1
WO2008099843A1 PCT/JP2008/052331 JP2008052331W WO2008099843A1 WO 2008099843 A1 WO2008099843 A1 WO 2008099843A1 JP 2008052331 W JP2008052331 W JP 2008052331W WO 2008099843 A1 WO2008099843 A1 WO 2008099843A1
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WIPO (PCT)
Prior art keywords
layer
nitride semiconductor
semiconductor element
iii nitride
manufacturing
Prior art date
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PCT/JP2008/052331
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English (en)
French (fr)
Inventor
Hirotaka Otake
Shin Egami
Hiroaki Ohta
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Rohm Co., Ltd.
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Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Publication of WO2008099843A1 publication Critical patent/WO2008099843A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Abstract

　本発明の窒化物半導体素子は、ｎ型のIII族窒化物半導体からなる第１層と、前記第１層上に設けられたｐ型不純物を含むIII族窒化物半導体からなる第２層と、前記第２層上に設けられたｎ型のIII族窒化物半導体からなる第３層と、前記第２層における、前記第１、第２および第３層に跨る壁面に形成された前記第２層とは異なる伝導特性を有するIII族窒化物半導体からなる第４層と、前記第４層に接するように形成されたゲート絶縁膜と、前記ゲート絶縁膜を挟んで前記第４層に対向するように形成されたゲート電極と、前記第２層にオーミック接触するように形成されたオーミック電極と、を含む。
PCT/JP2008/052331 2007-02-14 2008-02-13 窒化物半導体素子および窒化物半導体素子の製造方法 WO2008099843A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007033934 2007-02-14
JP2007-033934 2007-02-14

Publications (1)

Publication Number Publication Date
WO2008099843A1 true WO2008099843A1 (ja) 2008-08-21

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009044035A (ja) * 2007-08-10 2009-02-26 Sanken Electric Co Ltd 電界効果半導体装置
CN102648527A (zh) * 2009-10-08 2012-08-22 住友电气工业株式会社 半导体器件及其制造方法
CN104347694A (zh) * 2013-08-05 2015-02-11 株式会社东芝 半导体装置及半导体装置的制造方法
US9252103B2 (en) 2010-06-18 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2017175169A (ja) * 2010-12-28 2017-09-28 株式会社半導体エネルギー研究所 半導体装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH031545A (ja) * 1989-05-29 1991-01-08 Sony Corp Ｍｉｓ型トランジスタとｍｉｓ型トランジスタの製造方法
JPH0923001A (ja) * 1995-07-05 1997-01-21 Nec Corp 半導体装置の製造方法
JP2000012846A (ja) * 1998-06-22 2000-01-14 Denso Corp 炭化珪素半導体装置及びその製造方法
JP2001230410A (ja) * 2000-02-18 2001-08-24 Furukawa Electric Co Ltd:The ＧａＮ系電界効果トランジスタとその製造方法
JP2003163354A (ja) * 2001-11-27 2003-06-06 Furukawa Electric Co Ltd:The 電界効果トランジスタ及びその製造方法
JP2004260140A (ja) * 2003-02-06 2004-09-16 Toyota Central Res & Dev Lab Inc Ｉｉｉ族窒化物半導体を有する半導体素子
JP2006286954A (ja) * 2005-03-31 2006-10-19 Eudyna Devices Inc 半導体装置及びその製造方法
JP2008053449A (ja) * 2006-08-24 2008-03-06 Rohm Co Ltd 半導体装置およびその製造方法
JP2008053448A (ja) * 2006-08-24 2008-03-06 Rohm Co Ltd Ｍｉｓ型電界効果トランジスタおよびその製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH031545A (ja) * 1989-05-29 1991-01-08 Sony Corp Ｍｉｓ型トランジスタとｍｉｓ型トランジスタの製造方法
JPH0923001A (ja) * 1995-07-05 1997-01-21 Nec Corp 半導体装置の製造方法
JP2000012846A (ja) * 1998-06-22 2000-01-14 Denso Corp 炭化珪素半導体装置及びその製造方法
JP2001230410A (ja) * 2000-02-18 2001-08-24 Furukawa Electric Co Ltd:The ＧａＮ系電界効果トランジスタとその製造方法
JP2003163354A (ja) * 2001-11-27 2003-06-06 Furukawa Electric Co Ltd:The 電界効果トランジスタ及びその製造方法
JP2004260140A (ja) * 2003-02-06 2004-09-16 Toyota Central Res & Dev Lab Inc Ｉｉｉ族窒化物半導体を有する半導体素子
JP2006286954A (ja) * 2005-03-31 2006-10-19 Eudyna Devices Inc 半導体装置及びその製造方法
JP2008053449A (ja) * 2006-08-24 2008-03-06 Rohm Co Ltd 半導体装置およびその製造方法
JP2008053448A (ja) * 2006-08-24 2008-03-06 Rohm Co Ltd Ｍｉｓ型電界効果トランジスタおよびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009044035A (ja) * 2007-08-10 2009-02-26 Sanken Electric Co Ltd 電界効果半導体装置
CN102648527A (zh) * 2009-10-08 2012-08-22 住友电气工业株式会社 半导体器件及其制造方法
US9252103B2 (en) 2010-06-18 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2017175169A (ja) * 2010-12-28 2017-09-28 株式会社半導体エネルギー研究所 半導体装置
CN104347694A (zh) * 2013-08-05 2015-02-11 株式会社东芝 半导体装置及半导体装置的制造方法

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